Buz 100
Buz 100
Buz 100
SIPMOS Power Transistor N channel Enhancement mode Avalanche-rated dv/dt rated Ultra low on-resistance 175C operating temperature also in TO-220 SMD available Pin 1 G Type BUZ 100 Pin 2 D Pin 3 S
VDS
50 V
ID
60 A
RDS(on)
0.018
Package TO-220 AB
ID IDpuls
240
TC = 101 C
Pulsed drain current
TC = 25 C
Avalanche energy, single pulse
EAS
250 dv/dt 6
mJ
ID = 60 A, VDD = 25 V, RGS = 25 L = 70 H, Tj = 25 C
Reverse diode dv/dt kV/s
VGS Ptot
20 250
V W
TC = 25 C
Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
C K/W
Semiconductor Group
07/96
BUZ 100
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
50 3 0.1 1 10 10 0.013 4 1 100 100 100
VGS(th)
2.1
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
A nA A nA 0.018
IGSS RDS(on)
VGS = 20 V, VDS = 0 V
Drain-Source on-resistance
VGS = 10 V, ID = 60 A
Semiconductor Group
07/96
BUZ 100
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
25 39 2400 800 300 -
VDS 2 * ID * RDS(on)max, ID = 60 A
Input capacitance
Ciss Coss
-
Crss
-
td(on)
tr
100 150
td(off)
250 335
tf
140 190
Semiconductor Group
07/96
BUZ 100
Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1.4 70 0.16 60 240 V 1.8 ns C Values typ. max. Unit
TC = 25 C
Inverse diode forward voltage
VGS = 0 V, IF = 120 A
Reverse recovery time
Semiconductor Group
07/96
BUZ 100
260 W 220
Ptot
200 180 160 140 120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 C 180
ID
TC
TC
K/W A
ID
=
10 2
) on S( D R
/ID
t = 30.0s p
S
100 s
ZthJC
10 -1
1 ms
10 -2 D = 0.50
10 ms
10
DC
10 0 0 10
10
V 10
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
s 10
VDS
tp
Semiconductor Group
07/96
BUZ 100
Ptot = 250W
l k j i h
VGS [V] a 4.0
0.045 RDS (on) 0.040 0.035 0.030 0.025 0.020 0.015 0.010
VGS [V] =
b j f g h i
ID
110 100 90 80 70
e g
b c d
4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
f e
f g h i
60 50
d
j k l
40 30 20
c
b 5.5
c 6.0
d 6.5
e f 7.0 7.5
g 8.0
20
40
60
80
120
VDS
ID
S 50
ID
45 40
gfs
30
25 35 30 25 15 20 15 10 5 5 0 0 0 1 2 3 4 5 6 7 8 V VGS 10 0 10 20 30 40 A 60 10 20
ID
Semiconductor Group
07/96
BUZ 100
0.040 RDS (on) 0.035 0.030 0.025 0.020 0.015 0.010 0.005 0.000 -60
98%
VGS(th)
typ
98%
2.4 2.0
2%
typ
-20
20
60
100
180
Tj
Tj
Typ. capacitances
pF
IF Ciss
10 2
10 3
Coss
10 1
10
15
20
25
30
V 40 VDS
0.4
0.8
1.2
1.6
2.0
2.4
3.0
VSD
Semiconductor Group
07/96
BUZ 100
EAS
VGS
12
10
Tj
Q Gate
62 V 60
V(BR)DSS 59
58 57 56 55 54 53 52 51 50 49 48 47 -60
-20
20
60
100
180
Tj
Semiconductor Group
07/96
BUZ 100
Semiconductor Group
07/96
This datasheet has been download from: www.datasheetcatalog.com Datasheets for electronics components.