Irfb4020Pbf: Digital Audio Mosfet
Irfb4020Pbf: Digital Audio Mosfet
Irfb4020Pbf: Digital Audio Mosfet
IRFB4020PbF
Key Parameters
200 80 18 6.7 3.2 175 V m: nC nC C
VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max
TO-220AB
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD and EMI. Additional features of this MOSFET are 175C operating junction temperature and repetitive avalanche capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for ClassD audio amplifier applications.
Max.
200 20 18 13 52 100 52 0.70 -55 to + 175
Units
V A
f f
W W/C C
Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
Thermal Resistance
RJC RCS RJA Junction-to-Case
Parameter
www.irf.com
1
03/03/06
IRFB4020PbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS VDSS/TJ RDS(on) VGS(th) VGS(th)/TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw RG(int) td(on) tr td(off) tf Ciss Coss Crss Coss eff. LD LS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Gate Threshold Voltage Coefficient Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Gate Charge Overdrive Switch Charge (Qgs2 + Qgd) Internal Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance Internal Drain Inductance Internal Source Inductance
Min.
200 3.0 24
Conditions
VGS = 0V, ID = 250A
V/C Reference to 25C, ID = 1mA m VGS = 10V, ID = 11A V VDS = VGS, ID = 100A mV/C A nA S
VDS = 200V, VGS = 0V VDS = 200V, VGS = 0V, TJ = 125C VGS = 20V VGS = -20V VDS = 50V, ID = 11A VDS = 100V VGS = 10V ID = 11A See Fig. 6 and 18
nC
pF
= 1.0MHz, See Fig.5 VGS = 0V, VDS = 0V to 160V Between lead, 6mm (0.25in.) from package and center of die contact
G S D
Avalanche Characteristics
Parameter
Typ.
Max.
Units mJ A mJ
g
Min.
82 280
Diode Characteristics
Parameter
IS @ TC = 25C Continuous Source Current ISM VSD trr Qrr
Notes:
Conditions
MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 11A, VGS = 0V TJ = 25C, IF = 11A di/dt = 100A/s
(Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Repetitive rating; pulse width limited by max. junction temperature. Starting TJ = 25C, L = 1.62mH, RG = 25, IAS = 11A. Pulse width 400s; duty cycle 2%.
R is measured at TJ of approximately 90C. Limited by Tjmax. See Figs. 14, 15, 17a, 17b for repetitive
avalanche information.
www.irf.com
IRFB4020PbF
100
TOP VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V
100
TOP VGS 15V 12V 10V 8.0V 7.0V 6.0V 5.5V 5.0V
10
BOTTOM
10
BOTTOM
5.0V 1
10
100
3.0 2.5
(Normalized)
10
T J = 25C
0.1 2 3 4 5 6 7 8
C, Capacitance (pF)
1000
Ciss
10
15
20
www.irf.com
IRFB4020PbF
100
1000
T J = 175C
10
100 10 1
T J = 25C 1
100sec 0.1 0.01 0.001 1 10 100 1000 VDS, Drain-to-Source Voltage (V) Tc = 25C Tj = 175C Single Pulse 1msec 10msec
VGS = 0V 0.1 0.2 0.4 0.6 0.8 1.0 1.2 VSD, Source-to-Drain Voltage (V)
DC
18 16
ID, Drain Current (A)
2.0
1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C )
Ri (C/W)
0.0283 0.3659 0.7264 0.3093
i (sec)
0.000007 0.000140 0.001376 0.007391
0.1
0.01
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 1E-005 0.0001 0.001 0.01 0.1 1 10 100
0.001 1E-006
www.irf.com
IRFB4020PbF
RDS(on), Drain-to -Source On Resistance (m )
300
400
EAS , Single Pulse Avalanche Energy (mJ)
ID = 11A
300
T J = 125C
200
100
0
10 11 12 13 14 15 16
25
50
75
100
125
150
175
100
Avalanche Current (A)
Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche pulsewidth, tav assuming Tj = 25C due to avalanche losses
10
0.01 0.05
0.10
0.1
0.01 1.0E-06
1.0E-05
1.0E-03
1.0E-02
1.0E-01
80
60
40
20
Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 17a, 17b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav f ZthJC(D, tav) = Transient thermal resistance, see figure 11) PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC Iav = 2DT/ [1.3BVZth] EAS (AR) = PD (ave)tav
www.irf.com
IRFB4020PbF
V(BR)DSS
15V
tp
DRIVER
VDS
RG
VGS 20V
D.U.T
IAS tp
+ V - DD
0.01
I AS
LD VDS
+
VDD D.U.T VGS Pulse Width < 1s Duty Factor < 0.1%
90%
VDS
10%
VGS
td(on) tr td(off) tf
Id Vds Vgs
L
0
DUT 1K
VCC
Vgs(th)
Qgs1 Qgs2
Qgd
Qgodr
www.irf.com
IRFB4020PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB packages are not recommended for Surface Mount Application. Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IRs Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 03/06
www.irf.com
Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/