0% found this document useful (0 votes)
26 views

1.6 GHZ Differential Wideband Silicon Rfic Amplifier UPC2726T

This document summarizes the specifications and performance of the UPC2726T 1.6 GHz differential wideband silicon RFIC amplifier. Key points include: - It provides up to 15 dB of gain across a wide 1.6 GHz bandwidth and small package size. - Electrical characteristics are provided like noise figure, gain, return loss, and linearity over voltage and temperature ranges. - Graphs illustrate characteristics such as gain vs. frequency and temperature, output power vs. input power, and return loss vs. frequency. - Application information and recommended circuit layout are included to help with design integration.

Uploaded by

mancys2000
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PDF, TXT or read online on Scribd
0% found this document useful (0 votes)
26 views

1.6 GHZ Differential Wideband Silicon Rfic Amplifier UPC2726T

This document summarizes the specifications and performance of the UPC2726T 1.6 GHz differential wideband silicon RFIC amplifier. Key points include: - It provides up to 15 dB of gain across a wide 1.6 GHz bandwidth and small package size. - Electrical characteristics are provided like noise figure, gain, return loss, and linearity over voltage and temperature ranges. - Graphs illustrate characteristics such as gain vs. frequency and temperature, output power vs. input power, and return loss vs. frequency. - Application information and recommended circuit layout are included to help with design integration.

Uploaded by

mancys2000
Copyright
© Attribution Non-Commercial (BY-NC)
Available Formats
Download as PDF, TXT or read online on Scribd
You are on page 1/ 4

1.

6 GHz DIFFERENTIAL WIDEBAND SILICON RFIC AMPLIFIER


FEATURES
HIGH GAIN: 15 dB Typical at 400 MHz WIDEBAND FREQUENCY RESPONSE: 1.6 GHz TYP SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE
Power Gain, GP (dB)
20 GP

UPC2726T

NOISE FIGURE AND GAIN vs. FREQUENCY AND VOLTAGE


VCC = 5.0 V 3.0 V

2.0 V

9 7 NF VCC = 2.0 V 5 VCC = 4.5--5.5 V 3 1 0.1 0.3 1.0 2.0 3.0

DESCRIPTION
The UPC2726T is a Silicon RF Integrated Citrcuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This amplifier was designed as a buffer amplifier for circuits requiring differential inputs and outputs for increased commonmode rejection. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.

Frequency, f (GHz) GAIN vs. FREQUENCY AND TEMPERATURE


20

-40C

Power Gain, GP (dB)

15

25C

10

85C

VCC = 5.0 V 5 0.1 0.3 1.0 2.0 3.0

Frequency, f (GHz)

ELECTRICAL CHARACTERISTICS (TA = 25C, ZL = ZS = 50 , f = 400 MHz)


PART NUMBER PACKAGE OUTLINE SYMBOLS ICC GS NF fu PSAT RLIN RLOUT ISOL OIP3 PARAMETERS AND CONDITIONS Circuit Current, (No Signal) Small Signal Gain Noise Figure Upper limit Operating Input Return Loss Output Return Loss Isolation Output 3rd Order Intercept Point2 Frequency1 Saturated Output Power UNITS mA dB dB GHz dBm dB dB dB dBm 1.0 -5 MIN 8 11 VCC = 5 V TYP 11.5 15 4.5 1.6 -2 2 4 60 -2.5 UPC2726T VCC = 2 V TYP 2.5 4.5 5.1 2.4 -14 1 4 58 -10

MAX 15 17 6

MIN

MAX

Notes: 1. The Gain at fu is 3 dB down from the gain at 400 MHz. 2. f1 = 400 MHz, f2 = 402 MHz, single side band.

California Eastern Laboratories

Noise Figure, NF (dB)

SINGLE POSITIVE DC SUPPLY

10

UPC2726T ABSOLUTE MAXIMUM RATINGS1 (TA = 25C)


SYMBOLS VCC PIN PT TOP TSTG PARAMETERS Supply Voltage Input Power Total Power Dissipation2 Operating Temperature Storage Temperature UNITS V dBm mW C C RATINGS 6.0 0 280 -40 to +85 -55 to +150

RECOMMENDED OPERATING CONDITIONS


SYMBOLS VCC TOP PARAMETERS Supply Voltage Operating Temperature UNITS V C MIN 4.5 -40 TYP MAX 5.0 25 5.5 85

Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85C).

TYPICAL PERFORMANCE CURVES (TA = 25C)

CIRCUIT CURRENT vs. VOLTAGE


20 18 No input signals
14 16

CIRCUIT CURRENT vs. OPERATING TEMPERATURE


VCC = 5.0 V

Circuit Current, ICC (mA)

Circuit Current, ICC (mA)


0 1 2 3 4 5 6

16 14 12 10 8 6 4 2 0

12 10 8 6 4 2 0 -40 -20 0 20 40 60 80 100

Supply Voltage, VCC (V)

Operating Temperature, TOP (C)

RETURN LOSS vs. FREQUENCY


0 RLOUT -10 RLIN RLIN
10

OUTPUT POWER vs. INPUT POWER and VOLTAGE


f = 400 MHz 0

RLOUT

Conversion Gain (dB)

Return Loss, RL (dB)

VCC = 5.5 V VCC = 5.0 V

-20

-10

VCC = 4.5 V

-30 ISOL

-20

-40

VCC = 2.0 V -30

-50

-60 1 0.3 1.0 2.0

-40 -50

-40

-30

-20

-10

Frequency, f (MHz)

Input Power, PIN (dBm)

UPC2726T TYPICAL PERFORMANCE CURVES (TA = 25C)

SATURATED OUTPUT POWER vs. FREQUENCY and VOLTAGE


0

OUTPUT POWER vs. INPUT POWER and TEMPERATURE


10 VCC = 5.0 V f = 400 MHz TA = +25C TA = +85C

Saturated Output Power, POUT (dBm)

-2 -4 -6 -8 -10 -12 -14 -16 -18 -20 0.1 VCC = 2.0 V

Output Power,POUT (dBm)

VCC = 5.5 V VCC = 5.0 V VCC = 4.5 V

-10

TA = -40C

-20

-30

0.2

0.5

-40 -50

-40

-30

-20

-10

Frequency, f (MHz)

Input Power, PIN (dBm)

S PARAMETERS

100 M
100 M 400 M

1G 400 M
1G

S11

Start: 100 MHz Stop: 2 Ghz Conditions: TA = 25C, VCC = 5 V

S22

OUTLINE DIMENSIONS (Units in mm)


PACKAGE OUTLINE T06
+0.2 2.8 -0.3 +0.2 1.5 -0.1

LEAD CONNECTIONS
(Top View) (Bottom View)

C1P

2
2.90.2 3 0.95 4

1
5

1.90.2 2 0.95

-0.05 0.3 +0.10

+0.2 1.1 -0.1

0.8

0.130.1

1. INPUT 2. GND 3. OUTPUT

4. OUTPUT 5. VCC 6. INPUT

0 to 0.1

Note: All dimensions are typical unless otherwise specified.

UPC2726T TEST CIRCUIT


VCC 1000 pF
3

RECOMMENDED P.C.B. LAYOUT (Units in mm)


3.10

4 0.95

50 IN 1000 pF IN 1000 pF

5 6

3 1000 pF

50 OUT

1 2

4 1000 pF

6 0.5 MIN

OUT
1.0 MIN 1.0 MIN

EXAMPLE OF SYSTEM APPLICATION


DC AMP DET

1st IF input

RF amp. ATT RF amp.

MIX. IF amp. Sound Visual

<From ODU.>

PC2726T

FM DEMO

VCO OP LPF

PLL

EQUIVALENT CIRCUIT
5 VCC

RFOUT 4 6 RFIN

3 RFOUT 1 RFIN

ORDERING INFORMATION
PART NUMBER UPC2726T-E3 Note: Embossed Tape, 8 mm wide, QTY 3K/Reel

2 GND

EXCLUSIVE NORTH AMERICAN AGENT FOR

RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM 09/21/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE

You might also like