1.6 GHZ Differential Wideband Silicon Rfic Amplifier UPC2726T
1.6 GHZ Differential Wideband Silicon Rfic Amplifier UPC2726T
UPC2726T
2.0 V
DESCRIPTION
The UPC2726T is a Silicon RF Integrated Citrcuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with fT approaching 20 GHz. This amplifier was designed as a buffer amplifier for circuits requiring differential inputs and outputs for increased commonmode rejection. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance.
-40C
15
25C
10
85C
Frequency, f (GHz)
MAX 15 17 6
MIN
MAX
Notes: 1. The Gain at fu is 3 dB down from the gain at 400 MHz. 2. f1 = 400 MHz, f2 = 402 MHz, single side band.
10
Notes: 1. Operation in excess of any one of these parameters may result in permanent damage. 2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (TA = +85C).
16 14 12 10 8 6 4 2 0
RLOUT
-20
-10
VCC = 4.5 V
-30 ISOL
-20
-40
-50
-40 -50
-40
-30
-20
-10
Frequency, f (MHz)
-10
TA = -40C
-20
-30
0.2
0.5
-40 -50
-40
-30
-20
-10
Frequency, f (MHz)
S PARAMETERS
100 M
100 M 400 M
1G 400 M
1G
S11
S22
LEAD CONNECTIONS
(Top View) (Bottom View)
C1P
2
2.90.2 3 0.95 4
1
5
1.90.2 2 0.95
0.8
0.130.1
0 to 0.1
4 0.95
50 IN 1000 pF IN 1000 pF
5 6
3 1000 pF
50 OUT
1 2
4 1000 pF
6 0.5 MIN
OUT
1.0 MIN 1.0 MIN
1st IF input
<From ODU.>
PC2726T
FM DEMO
VCO OP LPF
PLL
EQUIVALENT CIRCUIT
5 VCC
RFOUT 4 6 RFIN
3 RFOUT 1 RFIN
ORDERING INFORMATION
PART NUMBER UPC2726T-E3 Note: Embossed Tape, 8 mm wide, QTY 3K/Reel
2 GND
CALIFORNIA EASTERN LABORATORIES Headquarters 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 (408) 988-3500 Telex 34-6393 FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) Internet: http://WWW.CEL.COM 09/21/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE