Vlsi Cad Laboratory: Layout and Characterization of NAND Gate
Vlsi Cad Laboratory: Layout and Characterization of NAND Gate
Nama Matapelajaran :
Kod Matapelajaran :
:1
: 2003
: 2003
: PK-UTM-FKE-(0)-10
SEE 4722
FAKULTI KEJURUTERAAN ELEKTRIK
UNIVERSITI TEKNOLOGI MALAYSIA
KAMPUS SKUDAI
JOHOR
Disediakan oleh
Nama
Tandatangan
Cop
:
: Nasir Shaikh Husin
:
:
Disahkan oleh
Nama
Tandatangan
Cop
: Ketua Jabatan
: PM Dr. Ahmad Zuri Shaameri
:
:
Tarikh
: Julai 2007
Tarikh
Project Introduction:
VLSI design involves drawing of transistor layout. Knowledge on how to design transistor layout is
very crucial for VLSI designers. In this project, you are required to do layout of a simple gate. You
must also characterize your layout by providing delay characteristics through simulation. You are
required to use Tanner Tools CAD software in this project.
Project tasks:
Design a 3-input NAND gate. Draw circuit schematics and layout for your logic gate. Choose transistor
sizes to conform to TSMC 0.25 m fabrication process. Make sure your layout is free from any design
rule violations and the layout represents the circuit schematic correctly. Then, get accurate rise time,
fall time, and propagation delays by extracting parasitic capacitances from the layout and simulating
the gate with T-Spice.
Tasks that you must do:
Draw the circuit schematics for the gate using S-Edit. Specify your transistor dimension.
Simulate the gate and verify correct functionality. Test all possible inputs.
Create layout for the gate. You must follow SCN5M_SUBM design rules.
Perform a Design Rules Check (DRC) on the layout.
Perform a Layout Versus Schematic (LVS) on the layout.
Extract your layout and simulate the netlist to verify correct functionality. Ensure all possible input
combinations are accounted for.
Repeat the simulation but this time by adding a reasonable load capacitance at the output.
Characterize your gate in terms of rise time, fall time, t pHL and tpLH propagation delays, and power
dissipation.