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ITMU-FRM-04

Review Date:
01/03/2014

FACULTY: TUTORIAL SHEET


School/ Department: EECE
Class: EC-IV-A B Tech
Subject Name: Linear control System
Subject Code: ECL204
Unit/ Title: Routh Hurwitz Stability Criterion

Tutorial sheet no: 8


Name of faculty: Pavan
Khetrapal
Semester: 4th

Course Educational objectives:


Understand system stability concept and learn Routh Hurwitz criterion for examining stability of
linear control system
Targetted Course Outcomes:
a) Plan and design a cellular network with given set of operator's frequencies and geographical
allocations.
b) Calculate the interference, capacities and relativeness of different systems against provided design
parameters, standards and technologies.

Q1:Prove the relation between 3 dB optical bandwidth and 3 dB electrical bandwidth of LED.
Q2:Why the laser power attains a constant value through oscillatory approach during transient current fluctuations ?
Q3:A double heterojunction InGaAsP LED emitting at peak wavelength of 1310 nm has radiative and

non-radiative

recombination time of 30 ns and 100 ns, respectively. The drive current is 40 mA . Calculate internal quantum

efficiency

and internal power generated.


Q4: Explain LED characteristics with well labeled diagrams
Q5: The external power efficiency of a GaAs LED is 1.5% when the forward

current is 50 mA and the potential difference

across its terminals is 2 V. Estimate the optical power generated within the device if the transmission factor at the

coated GaAs-

air interface is 0.8


Q6: Calculate the threshold gain coefficient for a GaAS laser diode of length 500 m with uncoated mirror facets having 32%
reflectivity at both the facets. The attenuation coefficient per unit length is 10 cm-1
Q7: A GaAs injection laser has an optical cavity of length 250 m and width of 100 m. At normal operating temperature, the
gain factor is 21x10-3 Acm-3 a nd loss factor per cm is 10. Determine the threshold current density and hence the threshold
current density for the device. The refractive index of GaAs is 3.6.

Signature of faculty:

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