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    Silicon Tuning Diodes: V I T T

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    Joseph Bernard
    This document describes silicon tuning diodes that provide excellent linearity and low capacitance spread for use in mobile communication equipment. It lists several diode types, their packaging and electrical characteristics including low reverse current, capacitance that decreases with increasing reverse voltage, and low series resistance. Graphs show the capacitance and temperature coefficient as a function of reverse voltage.

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    © All Rights Reserved
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    Silicon Tuning Diodes: V I T T

    Uploaded by

    Joseph Bernard
    50 views4 pages
    This document describes silicon tuning diodes that provide excellent linearity and low capacitance spread for use in mobile communication equipment. It lists several diode types, their packaging and electrical characteristics including low reverse current, capacitance that decreases with increasing reverse voltage, and low series resistance. Graphs show the capacitance and temperature coefficient as a function of reverse voltage.

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    Original Title

    493654_DS

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    This document describes silicon tuning diodes that provide excellent linearity and low capacitance spread for use in mobile communication equipment. It lists several diode types, their packaging and electrical characteristics including low reverse current, capacitance that decreases with increasing reverse voltage, and low series resistance. Graphs show the capacitance and temperature coefficient as a function of reverse voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    50 views4 pages

    Silicon Tuning Diodes: V I T T

    Uploaded by

    Joseph Bernard
    This document describes silicon tuning diodes that provide excellent linearity and low capacitance spread for use in mobile communication equipment. It lists several diode types, their packaging and electrical characteristics including low reverse current, capacitance that decreases with increasing reverse voltage, and low series resistance. Graphs show the capacitance and temperature coefficient as a function of reverse voltage.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 4

    BBY58...

    Silicon Tuning Diodes


    Excellent linearity
    High Q hyperabrupt tuning diode
    Low series resistance
    Designed for low tuning voltage operation
    for VCO's in mobile communications equipment
    For low frequency control elements
    such as TCXOs and VCXOs
    Very low capacitance spread
    BBY58-02L/V
    BBY58-02W
    BBY58-03W

    BBY58-05W

    BBY58-06W

    Type
    BBY58-02L*
    BBY58-02V
    BBY58-02W
    BBY58-03W
    BBY58-05W
    BBY58-06W
    BBY58-07L4*

    D 2

    D 1

    BBY58-07L4

    Package
    TSLP-2-1
    SC79
    SCD80
    SOD323
    SOT323
    SOT323
    TSLP-4-4

    D 1

    D 2

    D 1

    Configuration
    single, leadless
    single
    single
    single
    common cathode
    common anode
    parallel pair, leadless

    D 2

    LS(nH)
    0.4
    0.6
    0.6
    0.6
    1.4
    1.4
    0.4

    Marking
    88
    8
    88
    8 yel.
    B5s
    B6s
    B8

    *Preliminary

    Maximum Ratings at TA = 25C, unless otherwise specified


    Parameter

    Symbol

    Diode reverse voltage

    VR

    10

    Forward current

    IF

    20

    mA

    Operating temperature range

    Top

    -55 ... 150

    Storage temperature

    Tstg

    -55 ... 150

    Value

    Unit

    Jul-25-2003

    BBY58...
    Electrical Characteristics at T A = 25C, unless otherwise specified
    Symbol

    Parameter

    Values
    min.

    typ.

    Unit
    max.

    DC Characteristics
    Reverse current

    IR

    nA

    VR = 8 V

    10

    VR = 8 V, TA = 85 C

    100

    AC Characteristics
    Diode capacitance

    pF

    CT

    VR = 1 V, f = 1 MHz

    17.5

    18.3

    19.3

    VR = 2 V, f = 1 MHz

    11.4

    12.35

    13.3

    VR = 3 V, f = 1 MHz

    7.8

    8.6

    9.3

    VR = 4 V, f = 1 MHz

    5.5

    6.6

    VR = 6 V, f = 1 MHz

    3.8

    4.7

    5.5

    CT1/CT3

    1.9

    2.15

    2.4

    CT1/CT4

    2.7

    3.05

    3.5

    CT4/CT6

    1.15

    1.3

    1.45

    Capacitance ratio

    VR = 1 V, VR = 3 V, f = 1 MHz
    Capacitance ratio
    VR = 1 V, VR = 4 V, f = 1 MHz
    Capacitance ratio
    VR = 4 V, VR = 6 V, f = 1 MHz
    Series resistance

    rS

    VR = 1 V, f = 470 MHz, BBY58-02L, -07L4

    0.3

    VR = 1 V, f = 470 MHz, all other

    0.25

    Jul-25-2003

    BBY58...
    Diode capacitance CT = (VR)

    Normalized diode capacitance

    f = 1MHz

    C(TA)/C(25C)= (TA)
    f = 1MHz, VR = Parameter
    1.05

    32

    pF

    1V

    1.03

    CTA/C25

    CT

    24

    20

    4V

    1.02
    1.01
    1

    16

    0.99

    12

    0.98
    8
    0.97
    4

    0
    0

    0.96

    0.5

    1.5

    2.5

    3.5

    0.95
    -30

    VR

    -10

    10

    30

    50

    70

    100

    TA

    Temperature coefficient of the diode


    capacitance TCc = (VR)

    TCC

    10 -3

    1/C

    10 -4
    0

    0.5

    1.5

    2.5

    3.5

    VR

    Jul-25-2003

    This datasheet has been downloaded from:


    www.DatasheetCatalog.com
    Datasheets for electronic components.

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