BZB84 series

Dual Zener diodes

Rev. 03 — 9 June 2009 Product data sheet

1. Product profile

1.1 General description

General-purpose Zener diodes in a SOT23 (TO-236AB) small Surface-Mounted
Device (SMD) plastic package.

1.2 Features
n Non-repetitive peak reverse power n Small plastic package suitable for
dissipation: ≤ 40 W surface-mounted design
n Total power dissipation: ≤ 300 mW n Dual common anode configuration
n Two tolerance series: n AEC-Q101 qualified
B = ±2 % and C = ±5 %
n Wide working voltage range:
nominal 2.4 V to 75 V (E24 range)

1.3 Applications
n General regulation functions

1.4 Quick reference data

Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VF forward voltage IF = 10 mA [1] - - 0.9 V
PZSM non-repetitive peak reverse [2] - - 40 W
power dissipation

[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge
NXP Semiconductors BZB84 series
Dual Zener diodes

2. Pinning information
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1 cathode (diode 1)
3 3
2 cathode (diode 2)
3 common anode
1 2

1 2
006aaa154

3. Ordering information
Table 3. Ordering information
Type number Package
Name Description Version
BZB84-B2V4 to - plastic surface-mounted package; 3 leads SOT23
BZB84-C75[1]

[1] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.

4. Marking
Table 4. Marking codes
Type number Marking code[1] Type number Marking code[1]
BZB84-B2V4 V9* BZB84-C2V4 U9*
BZB84-B2V7 VA* BZB84-C2V7 UA*
BZB84-B3V0 VB* BZB84-C3V0 UB*
BZB84-B3V3 VC* BZB84-C3V3 UC*
BZB84-B3V6 VD* BZB84-C3V6 UD*
BZB84-B3V9 VE* BZB84-C3V9 UE*
BZB84-B4V3 VF* BZB84-C4V3 UF*
BZB84-B4V7 VG* BZB84-C4V7 UG*
BZB84-B5V1 VH* BZB84-C5V1 UH*
BZB84-B5V6 VK* BZB84-C5V6 UK*
BZB84-B6V2 VL* BZB84-C6V2 UL*
BZB84-B6V8 VM* BZB84-C6V8 UM*
BZB84-B7V5 VN* BZB84-C7V5 UN*
BZB84-B8V2 VP* BZB84-C8V2 UP*
BZB84-B9V1 VR* BZB84-C9V1 UR*

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Product data sheet Rev. 03 — 9 June 2009 2 of 14

NXP Semiconductors BZB84 series
Dual Zener diodes

Table 4. Marking codes …continued

Type number Marking code[1] Type number Marking code[1]
BZB84-B10 VS* BZB84-C10 US*
BZB84-B11 VT* BZB84-C11 UT*
BZB84-B12 VU* BZB84-C12 UU*
BZB84-B13 VV* BZB84-C13 UV*
BZB84-B15 VW* BZB84-C15 UW*
BZB84-B16 PT* BZB84-C16 PB*
BZB84-B18 PU* BZB84-C18 PC*
BZB84-B20 RP* BZB84-C20 RQ*
BZB84-B22 PV* BZB84-C22 PD*
BZB84-B24 PW* BZB84-C24 PE*
BZB84-B27 PX* BZB84-C27 PF*
BZB84-B30 PY* BZB84-C30 PG*
BZB84-B33 PZ* BZB84-C33 PH*
BZB84-B36 RA* BZB84-C36 PJ*
BZB84-B39 RB* BZB84-C39 PK*
BZB84-B43 RC* BZB84-C43 PL*
BZB84-B47 RD* BZB84-C47 PM*
BZB84-B51 RE* BZB84-C51 PN*
BZB84-B56 RF* BZB84-C56 PP*
BZB84-B62 RG* BZB84-C62 PQ*
BZB84-B68 RH* BZB84-C68 PR*
BZB84-B75 RJ* BZB84-C75 PS*

[1] * = -: made in Hong Kong

* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China

5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per diode
IF forward current - 200 mA
IZSM non-repetitive peak [1] - see
reverse current Table 8, 9,
10 and 11
PZSM non-repetitive peak [1] - 40 W
reverse power dissipation

BZB84_SER_3 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 03 — 9 June 2009 3 of 14

NXP Semiconductors BZB84 series
Dual Zener diodes

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
Per device
Ptot total power dissipation Tamb ≤ 25 °C [2] - 300 mW
Tj junction temperature - 150 °C
Tamb ambient temperature −55 +150 °C
Tstg storage temperature −65 +150 °C

[1] tp = 100 µs; square wave; Tj = 25 °C prior to surge

[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.

6. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
Per device; single diode loaded
Rth(j-a) thermal resistance from in free air [1] - - 417 K/W
junction to ambient
Rth(j-sp) thermal resistance from [2] - - 100 K/W
junction to solder point

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Soldering points at pins 1 and 2.

7. Characteristics
Table 7. Characteristics
Tj = 25 °C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
Per diode
VF forward voltage IF = 10 mA [1] - - 0.9 V

[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.

BZB84_SER_3 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 03 — 9 June 2009 4 of 14

NXP Semiconductors BZB84 series
Dual Zener diodes

Table 8. Characteristics per type; BZB84-B2V4 to BZB84-B24

Tj = 25 °C unless otherwise specified.
BZB84- Working voltage Differential Reverse current Temperature Diode Non-repetitive
Bxxx VZ (V) resistance I (µA) coefficient capacitance peak reverse
R
rdif (Ω) SZ (mV/K) C (pF)[1] current
d
IZSM (A)[2]
IZ = 5 mA IZ = 1 mA IZ = 5 mA IZ = 5 mA
Min Max Max Max Max VR (V) Min Max Max Max
2V4 2.35 2.45 600 100 50 1 −3.5 0 450 6.0
2V7 2.65 2.75 600 100 20 1 −3.5 0 450 6.0
3V0 2.94 3.06 600 95 10 1 −3.5 0 450 6.0
3V3 3.23 3.37 600 95 5 1 −3.5 0 450 6.0
3V6 3.53 3.67 600 90 5 1 −3.5 0 450 6.0
3V9 3.82 3.98 600 90 3 1 −3.5 0 450 6.0
4V3 4.21 4.39 600 90 3 1 −3.5 0 450 6.0
4V7 4.61 4.79 500 80 3 2 −3.5 0.2 300 6.0
5V1 5.00 5.20 480 60 2 2 −2.7 1.2 300 6.0
5V6 5.49 5.71 400 40 1 2 −2.0 2.5 300 6.0
6V2 6.08 6.32 150 10 3 4 0.4 3.7 200 6.0
6V8 6.66 6.94 80 15 2 4 1.2 4.5 200 6.0
7V5 7.35 7.65 80 15 1 5 2.5 5.3 150 4.0
8V2 8.04 8.36 80 15 0.70 5 3.2 6.2 150 4.0
9V1 8.92 9.28 100 15 0.50 6 3.8 7.0 150 3.0
10 9.80 10.20 150 20 0.20 7 4.5 8.0 90 3.0
11 10.80 11.20 150 20 0.10 8 5.4 9.0 85 2.5
12 11.80 12.20 150 25 0.10 8 6.0 10.0 85 2.5
13 12.70 13.30 170 30 0.10 8 7.0 11.0 80 2.5
15 14.70 15.30 200 30 0.05 10.5 9.2 13.0 75 2.0
16 15.70 16.30 200 40 0.05 11.2 10.4 14.0 75 1.5
18 17.60 18.40 225 45 0.05 12.6 12.4 16.0 70 1.5
20 19.6 20.4 225 55 0.05 14.0 14.4 18.0 60 1.5
22 21.6 22.4 250 55 0.05 15.4 16.4 20.0 60 1.25
24 23.5 24.5 250 70 0.05 16.8 18.4 22.0 55 1.25

[1] f = 1 MHz; VR = 0 V
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge

BZB84_SER_3 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 03 — 9 June 2009 5 of 14

NXP Semiconductors BZB84 series
Dual Zener diodes

Table 9. Characteristics per type; BZB84-B27 to BZB84-B75

Tj = 25 °C unless otherwise specified.
BZB84- Working voltage Differential Reverse current Temperature Diode Non-repetitive
Bxxx VZ (V) resistance I (µA) coefficient capacitance peak reverse
R
rdif (Ω) SZ (mV/K) C (pF)[1] current
d
IZSM (A)[2]
IZ = 2 mA IZ = 0.5 mA IZ = 2 mA IZ = 2 mA
Min Max Max Max Max VR (V) Min Max Max Max
27 26.5 27.5 300 80 0.05 18.9 21.4 25.3 50 1.00
30 29.4 30.6 300 80 0.05 21.0 24.4 29.4 50 1.00
33 32.3 33.7 325 80 0.05 23.1 27.4 33.4 45 0.90
36 35.3 36.7 350 90 0.05 25.2 30.4 37.4 45 0.80
39 38.2 39.8 350 130 0.05 27.3 33.4 41.2 45 0.70
43 42.1 43.9 375 150 0.05 30.1 37.6 46.6 40 0.60
47 46.1 47.9 375 170 0.05 32.9 42.0 51.8 40 0.50
51 50.0 52.0 400 180 0.05 35.7 46.6 57.2 40 0.40
56 54.9 57.1 425 200 0.05 39.2 52.2 63.8 40 0.30
62 60.8 63.2 450 215 0.05 43.4 58.8 71.6 35 0.30
68 66.6 69.4 475 240 0.05 47.6 65.6 79.8 35 0.25
75 73.5 76.5 500 255 0.05 52.5 73.4 88.6 35 0.20

[1] f = 1 MHz; VR = 0 V
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge

BZB84_SER_3 © NXP B.V. 2009. All rights reserved.

Product data sheet Rev. 03 — 9 June 2009 6 of 14

NXP Semiconductors BZB84 series
Dual Zener diodes

Table 10. Characteristics per type; BZB84-C2V4 to BZB84-C24

Tj = 25 °C unless otherwise specified.
BZB84- Working voltage Differential Reverse current Temperature Diode Non-repetitive
Cxxx VZ (V) resistance I (µA) coefficient capacitance peak reverse
R
rdif (Ω) SZ (mV/K) C (pF)[1] current
d
IZSM (A)[2]
IZ = 5 mA IZ = 1 mA IZ = 5 mA IZ = 5 mA
Min Max Max Max Max VR (V) Min Max Max Max
2V4 2.2 2.6 600 100 50 1 −3.5 0 450 6.0
2V7 2.5 2.9 600 100 20 1 −3.5 0 450 6.0
3V0 2.8 3.2 600 95 10 1 −3.5 0 450 6.0
3V3 3.1 3.5 600 95 5 1 −3.5 0 450 6.0
3V6 3.4 3.8 600 90 5 1 −3.5 0 450 6.0
3V9 3.7 4.1 600 90 3 1 −3.5 0 450 6.0
4V3 4.0 4.6 600 90 3 1 −3.5 0 450 6.0
4V7 4.4 5.0 500 80 3 2 −3.5 0.2 300 6.0
5V1 4.8 5.4 480 60 2 2 −2.7 1.2 300 6.0
5V6 5.2 6.0 400 40 1 2 −2.0 2.5 300 6.0
6V2 5.8 6.6 150 10 3 4 0.4 3.7 200 6.0
6V8 6.4 7.2 80 15 2 4 1.2 4.5 200 6.0
7V5 7.0 7.9 80 15 1 5 2.5 5.3 150 4.0
8V2 7.7 8.7 80 15 0.70 5 3.2 6.2 150 4.0
9V1 8.5 9.6 100 15 0.50 6 3.8 7.0 150 3.0
10 9.4 10.6 150 20 0.20 7 4.5 8.0 90 3.0
11 10.4 11.6 150 20 0.10 8 5.4 9.0 85 2.5
12 11.4 12.7 150 25 0.10 8 6.0 10.0 85 2.5
13 12.4 14.1 170 30 0.10 8 7.0 11.0 80 2.5
15 13.8 15.6 200 30 0.05 10.5 9.2 13.0 75 2.0
16 15.3 17.1 200 40 0.05 11.2 10.4 14.0 75 1.5
18 16.8 19.1 225 45 0.05 12.6 12.4 16.0 70 1.5
20 18.8 21.2 225 55 0.05 14.0 14.4 18.0 60 1.5
22 20.8 23.3 250 55 0.05 15.4 16.4 20.0 60 1.25
24 22.8 25.6 250 70 0.05 16.8 18.4 22.0 55 1.25

[1] f = 1 MHz; VR = 0 V
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge

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Product data sheet Rev. 03 — 9 June 2009 7 of 14

NXP Semiconductors BZB84 series
Dual Zener diodes

Table 11. Characteristics per type; BZB84-C27 to BZB84-C75

Tj = 25 °C unless otherwise specified.
BZB84- Working voltage Differential Reverse current Temperature Diode Non-repetitive
Cxxx VZ (V) resistance I (µA) coefficient capacitance peak reverse
R
rdif (Ω) SZ (mV/K) C (pF)[1] current
d
IZSM (A)[2]
IZ = 2 mA IZ = 0.5 mA IZ = 2 mA IZ = 2 mA
Min Max Max Max Max VR (V) Min Max Max Max
27 25.1 28.9 300 80 0.05 18.9 21.4 25.3 50 1.00
30 28.0 32.0 300 80 0.05 21.0 24.4 29.4 50 1.00
33 31.0 35.0 325 80 0.05 23.1 27.4 33.4 45 0.90
36 34.0 38.0 350 90 0.05 25.2 30.4 37.4 45 0.80
39 37.0 41.0 350 130 0.05 27.3 33.4 41.2 45 0.70
43 40.0 46.0 375 150 0.05 30.1 37.6 46.6 40 0.60
47 44.0 50.0 375 170 0.05 32.9 42.0 51.8 40 0.50
51 48.0 54.0 400 180 0.05 35.7 46.6 57.2 40 0.40
56 52.0 60.0 425 200 0.05 39.2 52.2 63.8 40 0.30
62 58.0 66.0 450 215 0.05 43.4 58.8 71.6 35 0.30
68 64.0 72.0 475 240 0.05 47.6 65.6 79.8 35 0.25
75 70.0 79.0 500 255 0.05 52.5 73.4 88.6 35 0.20

[1] f = 1 MHz; VR = 0 V
[2] tp = 100 µs; square wave; Tj = 25 °C prior to surge

mbg801 mbg781
103 300

PZSM IF
(W) (mA)

102 200

(1)
10 100
(2)

1 0
10−1 1 10 0.6 0.8 1
tp (ms) VF (V)

(1) Tj = 25 °C (prior to surge) Tj = 25 °C

(2) Tj = 150 °C (prior to surge)
Fig 1. Per diode: Non-repetitive peak reverse power Fig 2. Per diode: Forward current as a function of
dissipation as a function of pulse duration; forward voltage; typical values
maximum values

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Product data sheet Rev. 03 — 9 June 2009 8 of 14

NXP Semiconductors BZB84 series
Dual Zener diodes

mbg783 mbg782
0 10
12
SZ SZ
11
(mV/K) 4V3 (mV/K)
10
9V1
−1 5
3V9 8V2
7V5
3V6 6V8
6V2
5V6
5V1
−2 3V3 0
3V0 4V7

2V4
2V7
−3 −5
0 20 40 IZ (mA) 60 0 4 8 12 16 20
IZ (mA)

Tj = 25 °C to 150 °C Tj = 25 °C to 150 °C
BZB84-B/C2V4 to BZB84-B/C4V3 BZB84-B/C4V7 to BZB84-B/C12
Fig 3. Per diode: Temperature coefficient as a Fig 4. Per diode: Temperature coefficient as a
function of working current; typical values function of working current; typical values

006aaa996 006aaa997
50 30
VZ(nom) (V) = 2.7 IZ VZ(nom) (V) = 10
IZ
(mA) 3.3 (mA)
25
40 3.9
4.7 12
5.6 6.8 8.2 20
30

15
15
20
10

10 18 22 27 33 36
5

0 0
0 2 4 6 8 10 0 10 20 30 40
VZ (V) VZ (V)

Tj = 25 °C Tj = 25 °C
BZB84-B/C2V7 to BZB84-B/C8V2 BZB84-B/C10 to BZB84-B/C36
Fig 5. Per diode: Working current as a function of Fig 6. Per diode: Working current as a function of
working voltage; typical values working voltage; typical values

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Product data sheet Rev. 03 — 9 June 2009 9 of 14

NXP Semiconductors BZB84 series
Dual Zener diodes

8. Test information

8.1 Quality information

This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.

9. Package outline

3.0 1.1
2.8 0.9

0.45
0.15
2.5 1.4
2.1 1.2

1 2
0.48 0.15
0.38 0.09
1.9

Dimensions in mm 04-11-04

Fig 7. Package outline SOT23 (TO-236AB)

10. Packing information

Table 12. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description Packing quantity
3000 10000
BZB84-B2V4 to SOT23 4 mm pitch, 8 mm tape and reel -215 -235
BZB84-C75[2]

[1] For further information and the availability of packing methods, see Section 14.
[2] The series consists of 74 types with nominal working voltages from 2.4 V to 75 V.

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Product data sheet Rev. 03 — 9 June 2009 10 of 14

NXP Semiconductors BZB84 series
Dual Zener diodes

11. Soldering

3.3

2.9

1.9

solder lands

solder resist
3 1.7 2

solder paste

0.7 0.6 occupied area

(3×) (3×)
Dimensions in mm

0.5
(3×)
0.6
(3×)

1 sot023_fr

Fig 8. Reflow soldering footprint SOT23 (TO-236AB)

2.2
1.2
(2×)

1.4
(2×)

solder lands

4.6 2.6 solder resist

occupied area

Dimensions in mm
1.4

preferred transport direction during soldering

2.8

4.5 sot023_fw

Fig 9. Wave soldering footprint SOT23 (TO-236AB)

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Product data sheet Rev. 03 — 9 June 2009 11 of 14

NXP Semiconductors BZB84 series
Dual Zener diodes

12. Revision history

Table 13. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BZB84_SER_3 20090609 Product data sheet - BZB84_SER_2
Modifications: • Table 5 “Limiting values”: Ptot maximum value amended
• Table 6: Rth maximum values amended
• Section 13 “Legal information”: updated
BZB84_SER_2 20090223 Product data sheet - BZB84_SER_1
BZB84_SER_1 20080514 Product data sheet - -

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NXP Semiconductors BZB84 series
Dual Zener diodes

13. Legal information

13.1 Data sheet status

Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.

[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.

13.2 Definitions damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in Applications — Applications that are described herein for any of these
modifications or additions. NXP Semiconductors does not give any products are for illustrative purposes only. NXP Semiconductors makes no
representations or warranties as to the accuracy or completeness of representation or warranty that such applications will be suitable for the
information included herein and shall have no liability for the consequences of specified use without further testing or modification.
use of such information. Limiting values — Stress above one or more limiting values (as defined in
Short data sheet — A short data sheet is an extract from a full data sheet the Absolute Maximum Ratings System of IEC 60134) may cause permanent
with the same product type number(s) and title. A short data sheet is intended damage to the device. Limiting values are stress ratings only and operation of
for quick reference only and should not be relied upon to contain detailed and the device at these or any other conditions above those given in the
full information. For detailed and full information see the relevant full data Characteristics sections of this document is not implied. Exposure to limiting
sheet, which is available on request via the local NXP Semiconductors sales values for extended periods may affect device reliability.
office. In case of any inconsistency or conflict with the short data sheet, the Terms and conditions of sale — NXP Semiconductors products are sold
full data sheet shall prevail. subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
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reliable. However, NXP Semiconductors does not give any representations or
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limitation specifications and product descriptions, at any time and without
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notice. This document supersedes and replaces all information supplied prior
to the publication hereof. Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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document, and as such is not complete, exhaustive or legally binding.
authorized or warranted to be suitable for use in medical, military, aircraft,
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Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.

14. Contact information

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]

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NXP Semiconductors BZB84 series
Dual Zener diodes

15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2
4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4
8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 10
8.1 Quality information . . . . . . . . . . . . . . . . . . . . . 10
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Packing information. . . . . . . . . . . . . . . . . . . . . 10
11 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
13.2 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.3 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
13.4 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Contact information. . . . . . . . . . . . . . . . . . . . . 13
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.

© NXP B.V. 2009. All rights reserved.

For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 9 June 2009
Document identifier: BZB84_SER_3
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