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    Epitaxial Silicon Transistor: N-Channel RF Amplifier

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    Ariel Navarrete
    transistor pdf

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    © All Rights Reserved
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    Epitaxial Silicon Transistor: N-Channel RF Amplifier

    Uploaded by

    Ariel Navarrete
    15 views3 pages
    transistor pdf

    Original Title

    2N3819

    Copyright

    © © All Rights Reserved

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    transistor pdf

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    15 views3 pages

    Epitaxial Silicon Transistor: N-Channel RF Amplifier

    Uploaded by

    Ariel Navarrete
    transistor pdf

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
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    2N3819

    2N3819
    N-Channel RF Amplifier
    This device is designed for RF amplifier and mixer applications
    operating up to 450MHz, and for analog switching requiring low
    capacitance.
    Sourced from process 50.
    TO-92

    1. Drain 2. Gate 3. Source

    Epitaxial Silicon Transistor


    Absolute Maximum Ratings* TC=25C unless otherwise noted
    Symbol
    VDG

    Drain-Gate Voltage

    Parameter

    Ratings
    25

    Units
    V

    VGS

    Gate-Source Voltage

    -25

    ID

    Drain Current

    50

    mA

    IGF

    Forward Gate Current

    10

    mA

    TSTG

    Storage Temperature Range

    -55 ~ 150

    * This ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
    NOTES:
    1) These rating are based on a maximum junction temperature of 150 degrees C.
    2) These are steady limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

    Electrical Characteristics TC=25C unless otherwise noted


    Symbol
    Off Characteristics

    Parameter

    Test Condition

    Min.

    Typ.

    Max.

    Units

    2.0

    nA

    V(BR)GSS

    Gate-Source Breakdwon Voltage

    IG = 1.0A, VDS = 0

    IGSS

    Gate Reverse Current

    VGS = -15V, VDS = 0

    25

    VGS(off)

    Gate-Source Cutoff Voltage

    VDS = 15V, ID = 2.0nA

    8.0

    VGS

    Gate-Source Voltage

    VDS = 15V, ID = 200A

    -0.5

    -7.5

    VDS = 15V, VGS = 0

    2.0

    20

    mA

    2000

    6500

    mhos

    50

    mhos

    On Characteristics
    IDSS

    Zero-Gate Voltage Drain Current

    Small Signal Characteristics


    gfs

    Forward Transfer Conductance

    VDS = 15V, VGS = 0, f = 1.0KHz

    goss

    Output Conductance

    VDS= 15V, VGS = 0, f = 1.0KHz

    mhos

    yfs

    Forward Transfer Admittance

    VDS= 15V, VGS = 0, f = 1.0KHz

    Ciss

    Input Capacitance

    VDS = 15V, VGS = 0, f = 1.0KHz

    1600
    8.0

    pF

    Crss

    Reverse Transfer Capacitance

    VDS = 15V, VGS = 0, f = 1.0KHz

    4.0

    pF

    Thermal Characteristics TA=25C unless otherwise noted


    Symbol
    PD

    Parameter
    Total Device Dissipation
    Derate above 25C

    Max.
    350
    2.8

    Units
    mW
    mW/C

    RJC

    Thermal Resistance, Junction to Case

    125

    C/W

    RJA

    Thermal Resistance, Junction to Ambient

    357

    C/W

    * Device mounted on FR-4 PCB 1.5 1.6 0.06

    2002 Fairchild Semiconductor Corporation

    Rev. A1, December 2002

    2N3819

    Package Dimensions

    TO-92
    +0.25

    4.58 0.20

    4.58 0.15

    0.10

    14.47 0.40

    0.46

    1.27TYP
    [1.27 0.20]

    1.27TYP
    [1.27 0.20]
    0.20

    (0.25)

    +0.10

    0.38 0.05

    1.02 0.10

    3.86MAX

    3.60

    +0.10

    0.38 0.05

    (R2.29)

    Dimensions in Millimeters
    2002 Fairchild Semiconductor Corporation

    Rev. A1, December 2002

    TRADEMARKS
    The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
    intended to be an exhaustive list of all such trademarks.

    ACEx
    FACT
    ActiveArray
    FACT Quiet series
    Bottomless
    FAST
    FASTr
    CoolFET
    CROSSVOLT FRFET
    GlobalOptoisolator
    DOME
    EcoSPARK
    GTO
    E2CMOS
    HiSeC
    EnSigna
    I2C
    Across the board. Around the world.
    The Power Franchise
    Programmable Active Droop

    ImpliedDisconnect
    ISOPLANAR
    LittleFET
    MicroFET
    MicroPak
    MICROWIRE
    MSX
    MSXPro
    OCX
    OCXPro
    OPTOLOGIC
    OPTOPLANAR

    PACMAN
    POP
    Power247
    PowerTrench
    QFET
    QS
    QT Optoelectronics
    Quiet Series
    RapidConfigure
    RapidConnect
    SILENT SWITCHER
    SMART START

    SPM
    Stealth
    SuperSOT-3
    SuperSOT-6
    SuperSOT-8
    SyncFET
    TinyLogic
    TruTranslation
    UHC
    UltraFET
    VCX

    DISCLAIMER
    FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
    PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
    LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
    NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

    LIFE SUPPORT POLICY


    FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
    DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
    CORPORATION.
    As used herein:
    1. Life support devices or systems are devices or systems
    which, (a) are intended for surgical implant into the body,
    or (b) support or sustain life, or (c) whose failure to perform
    when properly used in accordance with instructions for use
    provided in the labeling, can be reasonably expected to
    result in significant injury to the user.

    2. A critical component is any component of a life support


    device or system whose failure to perform can be
    reasonably expected to cause the failure of the life support
    device or system, or to affect its safety or effectiveness.

    PRODUCT STATUS DEFINITIONS


    Definition of Terms
    Datasheet Identification

    Product Status

    Definition

    Advance Information

    Formative or In
    Design

    This datasheet contains the design specifications for


    product development. Specifications may change in
    any manner without notice.

    Preliminary

    First Production

    This datasheet contains preliminary data, and


    supplementary data will be published at a later date.
    Fairchild Semiconductor reserves the right to make
    changes at any time without notice in order to improve
    design.

    No Identification Needed

    Full Production

    This datasheet contains final specifications. Fairchild


    Semiconductor reserves the right to make changes at
    any time without notice in order to improve design.

    Obsolete

    Not In Production

    This datasheet contains specifications on a product


    that has been discontinued by Fairchild semiconductor.
    The datasheet is printed for reference information only.

    2002 Fairchild Semiconductor Corporation

    Rev. I1

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