1 (A) The Logic Expression For The Circuit Is A (BC+D) 1 (B) 2 2
1 (A) The Logic Expression For The Circuit Is A (BC+D) 1 (B) 2 2
1 (A) The Logic Expression For The Circuit Is A (BC+D) 1 (B) 2 2
A(BC+D)
1(b)
2
2
2
2
3
3
3
3
The above figure is the sizing of the transistor widths to give the same effective rise and
fall resistances as a unit inverter
1(c)
Layout
48
=1920
and capacitance is 8C
2 (b)
Here tpd() = RC
Where R : Equivalent resistance
C : Load capacitance
NOR Gate
Wp=3
Wmin
Wp=3Wmin
2Wmin
2Wmin
capacitance on one input, we find that the NOR gate has logical effort, g = 5/3. This is larger than
the logical effort of the NAND gate because pullup transistors are less effective at generating
output current than pulldown transistors. Were the two types of transistors similar, i.e., = 1, both
4
1
2
2