SKKQ 800
SKKQ 800
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SKKQ 800
Absolute Maximum Ratings
Symbol Conditions
Ioverload W1C; sin. 180°; 20 sec.; Tvjmax. = 150 °C; Tvjstart = 40°C
ITSM Tvj = 25°C; 10 ms
Tvj = 125°C; 10 ms
I²t Tvj = 25°C; 8,3 ... 10 ms
Tvj = 125°C; 8,3 ... 10 ms
SKKQ 800/14
SEMiSTART VRSM
VRRM,VDRM
SKKQ 800/18
Antiparallel thyristors for VRSM
softstart VRRM,VDRM
Tvj
SKKQ 800
Tstg
Preliminary Data
Characteristics
Symbol Conditions min.
Features VT Tvj = 25°C; IT = 1000 A
VT(TO) Tvj = 125°C
Compact design
rT Tvj = 125°C
Thyristor with amplifying gate
Pressure contact technology IDD;IRD Tvj = 125°C; VRD = VRRM; per module
tgd Tvj = 25°C; IG = 1A; diG/dt = 1A/µs
tgr VD = 0,67 * VDRM
Typical Applications
(dv/dt)cr Tvj = 125°C
Soft Starters (di/dt)cr Tvj = 125°C; f = 50 ... 60 Hz
tq Tvj = 125°C
IH Tvj = 25°C
Remarks
IL Tvj = 25°C; RG = 33 Ω
Please note: This module has no soft mold VGT Tvj = 25°C; d.c. 2
protection around the chip. It is therefore IGT Tvj = 25°C; d.c. 150
susceptible to environmental influences VGD Tvj = 125°C; d.c.
(dust, humidity, etc.). The humidity test
according to IEC60068-2-67 is not passed IGD Tvj = 125°C; d.c.
by this product. Rth(j-s) cont.; per thyristor
Mt 5
m approx.
Case
W1C
Cases / Circuits
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This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regardin
performance or suitability.
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