Multiple Choice Questions
Multiple Choice Questions
Multiple Choice Questions
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Power Electronics
2.13 Thermal runaway of a thyristor occurs because (a) positive resistance coefficient of the junction (b) negative resistance coefficient of the junction (c) if the latching current is more (d) if the thyristor is loaded with wider current pulses. 2.14 A positive voltage is applied to the gate of a reverse biased SCR (a) This inject more electrons into junction J1 (b) This increases reverse leakage current into anode (c) Hesting of junction is unaffected (d) Failure of junction occurs due to thermal runaway. 2.15 At a room temperature of 30C, minimum voltage and current required to fire a SCR is (a) 3 V, 40 mA (b) 0.6 V, 40 mA (c) no limit (d) 3 V, 100 mA 2.16 When the SCR conducts, the forward voltage drop (a) is 0.7 V (b) is 1 to 1.5 V (c) increases slightly with load current (d) remains constant with load current 2.17 The turn-on time of a SCR with inductive load is 20 ms. The pulse train frequency is 2.5 kHz with a mark/space ratio of 1/10, then (a) the SCR will turn-on (b) the SCR will not turn-on (c) the SCR will turn-on if inductance is removed (d) the SCR will turn-on if pulse frequency is increased to two times. 2.18 An SCR is rated at 75 A peak, 20 A average. The greatest possible delay in the trigger angle if the dc is a rated value is (a) 47.5 (b) 30 to 45 (c) 75.5 (d) 137 2.19 In a SCR (a) gate current is directly proportional to forward breakover voltage. (b) as gate-current is raised, forward breakover voltage reduces. (c) gate-current has to be kept ON continuously for conduction. (d) forward-breakover voltage is low in the forward blocking state. 2.20 There are only silicon controlled rectifiers and not germanium because (a) Si is available as compared to Ge. (b) Only Si has stable off-state. (c) Ge is very temperature sensitive. (d) Si only has the characteristic a1 + a2 < 1 at low collector currents and reaches 1 at high currents. 2.21 For normal SCRs, turn-on time is (a) less than turn-off time tq, (b) more than tq (c) equal to tq (d) half of tq 2.22 The average on-state current for an SCR is 20 A for conduction angle of 120. The average on-state current for 60 conduction angle will be (a) 20 A (b) 10 A (c) less than 20 A (d) 40 A
155
2.23 The average on-state current for an SCR is 20 A for a resistive load. If an inductance of 5 mH is included in the load, then average on-state current would be (a) more than 20 A (b) less than 20 A (c) 15 A (d) 20 A 2.24 In a thyristor, anode current is made up of (a) electrons only (b) electrons or holes (c) electron and holes (d) none of these 2.25 When a thyristor gets turned ON, the gate drive (a) should not be removed as it will turn-off the SCR (b) may or may not be removed (c) should be removed (d) should be removed in order to avoid increased losses and higher junction temperature 2.26 The forward voltage drop during SCR-on state is 1.5 V. This voltage drop (a) remains constant and its independent of load current (b) increases lightly with load current (c) decreases slightly with load current (d) varies linearly with load current 2.27 A thyristor can be termed as (a) dc switch (b) AC switch (c) both A or B are correct (d) square-wave switch 2.28 On-state voltage drop across a thyristor used in a 250 V supply system is of the order of (a) 100-110 V (b) 240-250 V (c) 1-1.5 V (d) None of these 2.29 In a thyristor, ratio of latching current to holding current is (a) 0.4 (b) 1.0 (c) 2.5 (d) None of these 2.30 Gate characteristics of a thyristor (a) is a straight line passing through the origin (b) is of the type, V V = a + b. IV (c) is a curve between V g and Ig (d) has a spread between two curves of V g = Ig. 2.31 In an SCR, anode current flows over a narrow region near the gate during (a) delay time d (b) rise time tr and spread time tp (c) td and tp (d) td and tr 2.32 Turn-on time for an SCR is 10 msec. If an inductance is inserted in the anode circuit, then the turn-on time will be (a) 10 msec (b) less than 10 msec (c) more than 10 msec (d) about 10 msec 2.33 Turn-off time of an SCR is measured from the instant (a) anode current becomes zero (b) anode voltage becomes zero (c) anode current and anode voltage become zero at the same time (d) gate current becomes zero. 2.34 A forward voltage can be applied to an SCR after its (a) anode current reduces to zero (b) gate recovery time (c) reverse recovery time (d) anode voltage reduces to zero
156
Power Electronics
2.35 For an SCR, with turn-on time of 5 msec, an ideal trigger pulse should have (a) short rise time with pulse width = 3 msec. (b) long rise time with pulse width = 6 msec. (c) short rise time with pulse width = 6 msec. (d) long rise time with pulse-width = 3 msec. 2.36 Turn-on time of an SCR in series with R L circuit can be reduced by (a) increasing circuit resistance R (b) decreasing R (c) increasing circuit inductance (d) decreasing L 2.37 Turn-on time of an SCR can be reduced by using a (a) rectangular pulse of high amplitude and narrow width (b) rectangular pulse of low amplitude and wide width (c) triangular pulse (d) trapezoidal pulse 2.38 Specification sheet for an SCR gives its maximum rms-on-state current as 35 A. This rms rating for a conduction angle of 120 would be (a) more than 35 A (b) less than 35 A (c) 35 A (d) None of these 2.39 Surge current rating of an SCR specifies the maximum (a) repetitive current with sine wave (b) non-repetitive current with rectangular wave (c) non-repetitive current with sine wave (d) repetitive current with rectangular wave 2.40 In the circuit given below, the function of the transistor is (a) to provide control signal to trigger SCR (b) to make SCR-ON (c) to make SCR-OFF (d) to amplify anode-current 2.41 In a thyristor, the magnitude of the anode-current will (a) increase if gate-current is increased (b) decrease if gate current is decreased (c) increase if gate-current is decreased (d) not change with any variation in gate current 2.42 An SCR does not conduct for a certain value of load resistance. In order to make it ON, it is necessary to (a) decrease the load resistance (b) increase the resistance (c) increase the gate-pulse (d) none of these 2.43 Most SCRs can be turned-off by voltage reversal during negative half-cycle of the ac supply for (a) all frequencies (b) frequencies upto 300 Hz (c) frequencies upto 30 kHz (d) frequencies upto 300 kHz
157
2.44 In circuit given below, in order to make a conducting SCR off, it is necessary to (a) make other SCR-off (b) make other SCR-ON (c) reverse the polarity of the applied voltage (d) remove the gate-current of conducting SCR
2.45 If a diode is connected in antiparallel with a SCR, then (a) both turn-off power loss and turn-off time decrease (b) turn-off power loss decreases but turn-off time increases (c) turn-off power loss increases, but turn-off time decreases (d) none of the above 2.46 In a commutation circuit, employed to turn-off an SCR, satisfactory turn-off is obtained when (a) circuit turn-off time < device turn-off time (b) circuit turn-off time > device turn-off time (c) circuit time constant > device turn-off time (d) circuit time constant < device turn-off time
158
3.7
Power Electronics
A PUT relaxation oscillator has values V B B = 15 V, R = 22 kW, R 2 = 6 kW, IP = 100 mA, V V = 1 V, IV = 7 mA, C = 1 mF, R K = 100 kW, R3 = 12 kW. The value of V P will be (a) 0.7 V (b) 10 V (c) 10.7 V (d) 15 V In Q.3.7, the value of R max will be (a) 2 kW (b) 2.2 kW (c) 14 kW (d) 43 kW In Q.3.7, the value of R min will be (a) 2 kW (b) 2.2 kW (c) 14 kW (d) 43 kW The frequency of oscillation in Q.3.7 will be (a) 36.4 Hz (b) 40.7 Hz (c) 50 Hz (c) 60 Hz In a UJT, intrinsic stand off ratio h is typically (a) 0.2 (b) 0.4 (c) 0.7 (d) 0.99 When a UJT is used for triggering of an SCR, the waveshape of the voltage is a (a) Sine Wave (b) Saw-tooth wave (c) Trapezoidal wave (d) Square wave Optocouplers combine (a) SITs and BJTs (b) IGBTs and MOSFETs (c) Power transformer and silicon transistors (d) Infrared light-emitting diode and silicon phototransistor In a UJT, maximum value of charging resistance is associated with (a) Peak Point (b) valley point (c) any point between peak & valley point (d) after the valley point
3.14
4.2
4.3
4.4
159
(c) resistors of same value across each SCR (d) one reactor in series with the string 4.5 Derating factors for parallel connection of thyristors are normally in the range (a) 0.5 to 1% (b) 1 to 5% (c) 8 to 20% (d) (d) 25 to 50% 4.6 To obtain the highest possible string efficiency, the SCRs connected in string must have (a) different characteristics (b) same charactersitcs (c) same voltage ratings only (d) same current ratings only 4.7 String efficiency is used for measuring the (a) voltage rating of SCRs (b) current rating of SCRs (c) temperature rating of SCRs (d) degree of utilization of SCRs 4.8 In series string, thyristor having the highest leakage resistance or low voltage current will share (a) larger portion of the applied voltage (b) smaller portion of the applied voltage (c) larger portion of current (d) smaller portion of current 4.9 Dynamic equalising networks are used to limit the (a) rate of rise of current (b) rate of rise of voltage (c) rate of rise of temperature (d) rate of rise of pressure 4.10 In optical triggering technique, LASCR is connected in (a) gate circuit of each thyristor (b) anode circuit of each thyristor (c) gate circuit of only one thyristor (d) anode circuit of only one thyristor.
160
Power Electronics
(c) T 2 is negative and there is the current pulse out of the gate (d) Either T 1 or T 2 is positive and there a current pulse out of the gate As compared to UJT, SUS (a) triggers only in one direction (b) does not have negative resistance characteristics (c) needs definate polarity of the applied voltage (d) triggers only at one particular voltage In its application, an SUS behaves in the same way as (a) UJT (b) SCR (c) tunnel diode (d) none of these Which of the following PNPN devices has two gates? (a) Triac (b) SCS (c) SUS (d) Diac Which of the following PNPN devices has a terminal for synchronising purpose? (a) SCS (b) Triac (c) Diac (d) SUS Which of the following devices is a three layer device? (a) SCS (b) SUS (c) Triac (d) Diac Which of the following methods will turn SCS off? (a) Applying negative pulse to the anode (b) Applying a positive pulse to the anode gate (c) Applying negative pulse to the cathode gate (d) All of these Which of the following PNPN devices does not have a gate terminal? (a) triac (b) SCS (c) SUS (d) Complementary SCR In a GTO, anode current begins to fall when gate current (a) is negative peak at time t = 0 (b) is negative peak at time t = storage time ts (c) just begins to become negative at t = 0 (d) none of these The device which cannot be triggered by voltage of either polarity is (a) Diac (b) Triac (c) Schottkey diode (d) SUS A triac and SCR are compared (a) Both are unidirectional devices (b) Triac requires more current for turn-on than SCR at a particular voltage (c) Triac has less time for turn-off than SCR (d) Both are available with comparable voltage and current ratings The uncontrolled electronic switch employed in power-electronic converters is (a) thyristor (b) bipolar junction transistor (c) diode (d) MOSFET Which semiconductor power device out of the following is not a current triggered device? (a) Thyristor (b) GTO (c) Triac (d) MOSFET
5.4
5.8 5.9
5.10 5.11
5.12 5.13
5.14 5.15
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5.22 5.23
5.24 5.25
5.26
1. (a), (b) and (c) are correct 2. (c), (d) and (e) are correct 3. (b), (c) and (d) are correct 4. (a), (c) and (e) are correct Power MOSFET is a (a) voltage controlled device (b) current controlled device (c) frequency controlled device (d) none of the above When transistors are used in series or parallel, a snubber circuit is used to (a) control the current (b) control the voltage (c) limit di/dt (d) all of these Which of the following is preferred for VHF/UHF applications? (a) BJT (b) MOSFET (c) SIT (d) IGBT Which of the following thyristors are gate turned off device? I. Gate turned off thyristor II. State Induction thyristor III. MOS-controlled thyristor (a) I only (b) II only (c) I and II only (d) I, II and III In a power-MOSFET, switching times are of the order of few (a) seconds (b) milliseconds (c) microseconds (d) nanoseconds A switched-mode power-supply operation at 20 kHz to 100 kHz range uses as the main switching element: (a) Thyristor (b) MOSFET (c) Triac (d) UJT The MOSFET switch in its on-state may be considered equivalent to (a) resistor (b) inductor (c) capacitor (d) battery A triac is effectively (a) antiparallel connection of two thyristors (b) antiparallel connection of a thyristor and a diode (c) antiparallel connection of two diodes (d) two thyristor, in parallel to increase the current capacity of the device Peak inverse rating of a triac (a) is the same as that of a thyristor (b) is greater than that of a thyristor (c) is inferior and very much less than that a thyristor (d) is not very significant due to the nature of its application
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Power Electronics
5.27 A reverse conducting thyristor is effectively (a) two thyristors in antiparallel (b) a diode connected antiparallel with a thyristor (c) two diodes in antiparallel (d) two thyristors connected in parallel 5.28 A Gate-turn-off thyristor (a) requires a special turn-off circuit like a thyristor (b) can be turned-off by removing the gate-pulse (c) can be turned-off by a negative current pulse at the gate (d) can be turned-off by a positive current pulse at the gate 5.29 A GTO like all the other power semiconductor devices requires protection against (a) rates of change of forward current and forward voltage (b) rate of change of current alone (c) rate of change of voltage alone (d) rates of change of forward current and forward voltage and overvoltages and currents 5.30 The inductance of snubber circuit and capacitance of snubber of a GTO (a) increase the rate of turn-off (b) make the turn-off very slow (c) cause overvoltages and spikes of voltage during turn-off (d) cause overvoltages and spikes of voltage during turn-on 5.31 An amplifying gate thyristor has (a) the advantages of high gate current at low level gate drive. (b) a poor di/dt rating even at high gate current (c) its di/dt improving only at high gate current (d) very slow spreading velocity 5.32 A BJT operates as a switch (a) under small signal conditions (b) with no signal condition (c) in the active region of transfer characteristic (d) under large signal conditions 5.33 The temperature coefficient of resistivity for power BJT is (a) positive (b) negative (c) zero 5.34 The main cause of the second breakdown in power BJT is (a) existence of the drift layer (b) low thickness of base (c) current crowding and negative temperature coefficient of resistivity 5.35 The turn-off snubber is connected in power BJT (a) to reduce the turn-on losses (b) to reduce the turn-off times (c) to divert the switching loss from the transistor to the snubber 5.36 The antisaturation arrangement ensure (a) high switching speed but high on state power loss (b) high switching speed and low on-state power loss (c) high switching speed and high breakdown voltage 5.37 The conductivity modulation in power BJT (a) reduces the turn-on time (b) reduces the on-state voltage drop (c) increase the on-state voltage drop
163
5.38 The SOA of a power device (a) gives the maximum operating temperature (b) specifies the maximum voltage and current (c) is an area in which the operating point of the device must be located for its safe operation. 5.39 A power BJT has a high interdigitated base emitter structure (a) to reduce current crowding during turn-on/off and hence avoid second breakdown (b) to increase gain of the transistor (c) to increase the switching frequency (d) to increase its voltage rating 5.40 The typical value of gain in a power BJT is (a) 100 (b) 1 (c) 10 (d) 1000 5.41 A transistor cannot be protected by a fuse because (a) a fuse of that current rating is not available (b) its thermal time constant is very less (c) over temperature limit of power transistor is high (d) none of the above 5.42 The operating frequency of a power MOSFET is higher than a power BJT because (a) it is a majority carrier device (b) it has an insulated gate (c) drift layer is absent in it (d) its gain is infinite 5.43 The on-state voltage drop of a power MOSFET is higher than a power BJT because (a) it has no drift layer (b) conductivity modulation is absent (c) its current capacity is higher (d) none of the above 5.44 Paralleling of MOSFET is quite easier because (a) it has a positive temperature coefficient of resistivity (b) its on-state voltage drop is much lesser (c) its gate-drive circuits are simpler (d) conductivity modulation is absent 5.45 For a MOSFET, snubber circuits (a) are very much essential to give it a dv/dt protection. (b) are not essential due to large SOA, however are still recommended (c) are never used (d) none of the above 5.46 A device is said to have a symmetric blocking capability if (a) it blocks forward and reverse voltages of equal or comparable magnitudes (b) it blocks only reverse voltages (c) it blocks only forward voltages (d) none of the above 5.47 The turn-off gain of the GTO is of the order of (a) 12 (b) 35 (c) 1020 (d) > 100 5.48 The body layer is connected to source terminal in a MOSFET in order to (a) reduce the on-state power dissipation (b) increase the speed of operation (c) avoid the latch-up in MOSFET
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Power Electronics
5.49 MOS devices should be handled by the package, not by leads to (a) avoid the damage due to handling (b) avoid damage due to static charge (c) avoid damage due to moisture (d) none of above 5.50 An IGBT structure is obtained by (a) adding an insulated gate to the BJT and adding a p+ layer. (b) by combining a MOSFET and BJT (c) none of the above 5.51 The temperature coefficient of resistivity of an IGBT is (a) positive (b) negative (c) flat 5.52 The SOA of IGBT is better than that of a power transistor because (a) it is a majority carrier device (b) it is a minority carrier device (c) second breakdown is absent due to its flat temperature coefficient of temperature 5.53 The maximum operating frequency of an IGBT is approximately (a) 10 kHz (b) 50 kHz (c) 100 kHz 5.54 The on-state voltage drop across the IGBT is (a) less than that across the MOSFET (b) greater than that across the MOSFET (c) equal to that of MOSFET 5.55 The reduction in the on-state voltage drop in IGBT takes place due to (a) added p+ layer in the IGBT structure (b) conductivity modulation (c) the n drift layer 5.56 The nonpunch through IGBT has a (a) symmetrical blocking capacity (b) asymmetrical blocking capacity (c) no blocking capacity at all 5.57 The blocking capacity of a punch-through IGBT is (a) symmetrical (b) asymmetrical (c) none of the above 5.58 A MOSFET controlled thyristor has a gate-turn-off capability because (a) The structure does not have a latching capability (b) There are separate MOSFET, for turn-on and turn-off (c) It is a minority carrier device (d) It is a majority carrier device 5.59 The turn-off time of an MCT is approximately (a) 0.1 ms (b) 1 ms (c) 23 ms (d) 1020 ms
165
6.3 6.4
A single phase one-pulse controlled circuit has resistance and counter emf load and 400 sin 314 t volt as the source voltage. For a load counter emf of 200 V, the range of firing angle control is (a) 30 to 150 (b) 60 to 180 (c) 60 to 120 (d) 30 to 180 A single phase full-wave mid-point thyristor converter uses a 230/200 V transformer with centre tap on the secondary side. The P.I.V. per thyristor is (a) 100 V (b) 141.4 V (c) 200 V (d) 282.8 V In a single phase full converter bridge the output voltage is given by (a) (c)
1 p
p +a
V m cos q dq V m cos q dq
(b) (d)
1 p
p +a
V m cos q dq
1 p
a + (p / 2) a - (p / 2)
1 2p
a + (p / 2) a - (p / 2)
V m cos q dq
6.5
V m cos q dq
(b)
1 p
1 p
(p / 2) + a (p / 2) - a
p a - (p / 2)
V m cos q dq
1 (c) p
6.6 6.7 6.8 6.9 6.10 6.11 6.12 6.13
a + (p / 2) a - (p / 2)
V m cos q dq
(d)
V m cos q dq
For continuous conduction, in a single-phase full converter each pair of SCRs conducts for (a) (p a) radians (b) p-radians (c) a-radians (d) (p + a) radians For discontinuous load current and extinction angle b > p radians, in a singlephase full converter, each SCR conducts for (a) a radians (b) (b a) radians (c) b radians (d) (a + b) radians In a single-phase full converter, if a and b are firing and extinction angles respectively, then the load current is discontinuous if (a) (b a) < p (b) (b a) > p (c) (b a) = p (d) (b a) = 3p/2 In a single phase converter with discontinuous conduction and extinction angle b > p, freewheeling diode conducts for (a) a (b) b p (c) p + a (d) b In a single-phase converter with discontinuous conduction and extinction angle b < p, the freewheeling diode conducts for (a) a (b) p b (c) b p (d) zero degree In a single-phase semiconverter, for discontinuous conduction and extinction angle b < p, each SCR conducts for (a) a (b) b (c) p a (d) b a In a single-phase semiconverter, for discontinuous conduction and extinction angle b > p, each SCR conducts for (a) p a (b) b p (c) a (d) b A freewheeling diode is placed across the dc load (a) to prevent reversal of load voltage (b) to permit transfer of load current away from the source (c) both (a) and (b) above (d) none of the above
166
Power Electronics
6.14 In a single-phase full converter, if output voltage has peak and average values of 325 V and 133 V respectively, then the firing angle is (a) 40 (b) 50 (c) 70 (d) 130 6.15 A converter which can operate in both 3-phase and 6-phase modes is a (a) 6-phase semiconverter (b) 6-phase full-converter (c) 3-phase semiconverter (d) 3-phase full-converter 6.16 In a 3-phase semiconverter, for firing angle less than or equal to 60, freewheeling diode conducts for (a) 30 (b) 60 (c) 90 (d) 0 6.17 In a 3-phase semiconverter, for firing angle equal to 120 and extinction angle equal to 110, freewheeling diode conducts for (a) 10 (b) 30 (c) 50 (d) 70 6.18 In a three-phase semiconverter, the three-SCRs are triggered at intervals of (a) 60 (b) 90 (c) 120 (d) 150 6.19 In a three-phase full converter, the six SCRs are fired at intervals of (a) 30 (b) 60 (c) 90 (d) 120 6.20 The frequency of the ripple in the output voltage of a 3-phase semiconverter depends upon (a) firing angle and load resistance (b) firing angle and supply frequency (c) firing angle and load inductance (d) only on load circuit parameters 6.21 In a 3-phase full-converter, if the load-current is I and ripple-free, then the average thyristor current is (a) I/2 (b) I/3 (c) I/4 (d) I/5 6.22 In a single-phase full-converter, if the load current is I and ripple-free, then the average thyristor current is (a) I/2 (b) I/3 (c) I/4 (d) I/5 6.23 In a single-phase full-converter, the number of SCRs conducting during overlap is (a) 1 (b) 2 (c) 3 (d) 4 6.24 In a 3-phase full-converter, the output voltage is at a frequency equal to (a) supply frequency f (b) 2f (c) 3f (d) 6f 6.25 Which of the following 3-phase ac to dc converter requires neutral point connection? (a) 3-phase semiconductor (b) 3-phase full-converter (c) 3-phase halfwave converter (d) 3-phase converter with diodes 6.26 The frequency of ripple in the output voltage of a three-phase half controlled bridge rectifier depends on the (a) firing angle (b) load inductance (c) load resistance (d) supply frequency 6.27 A half-wave SCR controlled circuit with RL 50 W conducts for 90 for an applied voltage of 800 V sinusoidal rms. If the SCR voltage drop is negligible, the power dissipated by the load is (a) 1800 W (b) 81 W (c) 52.36 W (d) 0 W
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6.28 In a single-phase full-wave SCR circuit with R, L load (a) power is delivered to the source for delay angles of less than 90 (b) the SCR changes from inverter to converter at a = 90 (c) the negative dc voltage is maximum at a = 180 (d) to turn-off the thyristor, the maximum delay angle must be less than 180. 6.29 The frequency of ripple in the output of a 3-phase semiconverter depends upon I. firing angle, II. load-resistance, III. supply frequency, IV. load inductance Combinations: (a) I, II and IV (b) II, III and IV (c) I and II (d) I and III 6.30 In a three-phase-semiconverter I. For firing angle less than or equal to 60, freewheeling diode conducts for zero degree II. For firing angle equal to 120, and extinction angle equal to 110 freewheeling diode conducts for 50. III. The output SCRs are triggered at intervals of 60. Combinations: (a) I and II (b) II and III (c) I and III (d) I, II and III 6.31 A single-phase, one pulse controlled circuit has resistance and counter emf load and 400 sin 314 t as the source voltage. For a load counter emf of 200 V, the range of firing angle control is (a) 30 to 150 (b) 30 to 180 (c) 60 to 120 (d) 60 to 180 6.32 In a 3-phase controlled bridge rectifier, with an increase of overlap angle, the output dc voltage (a) decrease (b) increases (c) does not change (d) depends upon load inductance 6.33 In a 3-phase, half wave rectifier, if per phase input voltage is 200 V, then the average output voltage is (a) 233.91 V (b) 116.95 V (c) 202.56 V (d) 101.28 V 6.34 When a line commutated converter operates in the inverter mode (G 93) (a) it draws both real and reactive power from the AC supply (b) it delivers both real and reactive power to the AC supply (c) it delivers both real and reactive power to ac supply (d) it draws reactive power from AC supply 6.35 In a 3-phase controlled bridge rectifier, with an increase of an overlap angle, the output dc voltage (a) decreases (b) increases (c) does not change (d) depends upon load inductance 6.36 When the firing angle a of a single-phase fully controlled rectifier feeding constant dc current into a load is 30, the displacement power factor of the rectifier is (G 98)
1 3 (d) 2 3 6.37 A 3-phase fully controlled, converter is feeding power into a d.c. load at a constant current of 150 A. The rms current through each thyristor of the converter is (G 98)
(a) 1
(b) 0.5
(c)
(a) 50 A
(b) 100 A
(c)
150 2 3
(d)
150 3
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Power Electronics
6.38 A six pulse thyristor rectifier bridge is connected to a balanced 50 Hz threephase ac source. Assuming that the dc output current of the rectifier is constant, the lowest harmonic component in the ac source line current is (G 2002) (a) 100 H (b) 150 Hz (c) 250 Hz (d) 300 Hz 6.39 A converter which can operate in both 3-pulse and 6-pulse modes is (a) 1-phase full converter (b) 3-phase half wave converter (c) 3-phase semiconverter (d) 3-phase full converter 6.40 In a three-phase full-converter, the output voltage during overlap is equal to (a) zero (b) source voltage (c) source voltage minus inductance drop (d) average value of conducting phase voltages. 6.41 The effect of the source inductance on the performance of the single-phase and three-phase full-converters is to (a) reduce the ripples in the load current (b) make discontinuous current as continuous (c) reduce the output voltage (d) increase the load voltage 6.42 In the circuit shown in Fig. MCQ. 6.42, L is large and the average value of i is 100 A. The thyristor is gated in the half cycle of e at a delay angle a equal to (G 92)
\ a = 167.9 The maximum conduction angle is p since freewheeling diode is available. Therefore, SCR is gated in the positive half cycle of e at a delay angle a equal to 168. 6.43 Referring to the Fig. MCQ. 6.43, the type of the load is (a) inductive load (b) resistive load (c) dc motor (d) capacitive load. (G 94)
169
6.44 A half-wave thyristor converter supplies a purely inductive load, as shown in Fig. MCQ. 6.44. If the triggering angle of the SCR is 120, the extinction angle will be (a) 240 (b) 180 (c) 200 (d) 120
Chapter 8: Choppers
8.1 In dc choppers, if T on is the on-period and f is the chopping frequency, then output voltage in terms of the input voltage V s is given by (a) V s T on/f (b) V s f/T on (c) V s/(f/Ton) (d) V s f, T on 8.2 In dc choppers, the waveforms for input and output voltages are respectively (a) discontinuous, continuous (b) continuous, discontinuous (c) both continuous (d) both discontinuous 8.3 In dc choppers, per unit ripple is maximum when duty cycle a is (a) 0.2 (b) 0.5 (c) 0.7 (d) 0.8 8.4 A step-up chopper has V s as the source voltage and a as the duty cycle. The output voltage for this chopper is given by (a) V s (1 + a) (b) V s /(1 a) (c) V s (1 a) (d) V s /(1 + a) 8.5 In dc choppers, if T is the chopping period, then the output voltage can be controlled by PWM by varying (a) T keeping T on constant (b) T on, keeping T constant (c) T keeping T off constant (d) T off keeping T constant 8.6 In dc choppers, for periodic time T, the output voltage can be controlled by FM by varying (a) T keeping T on constant (b) T on keeping T constant (c) T off keeping T constant (d) T keeping T off constant 8.7 For type A chopper, V s is the source voltage, R is the load resistance and a is the duty cycle. Average output voltage of this chopper is (a) a V s (b) (1 a) V s (c) V s /a (d) V s /(1 a) 8.8 If the chopper frequency is 200 Hz and ton time is 2 ms, the duty cycle is (a) 0.4 (b) 0.8 (c) 0.6 (d) none of these
170
8.9 8.10
Power Electronics
Chopper control for DC motor provides variation in (a) input voltage (b) frequency (c) both (a) and (b) above (d) none of the above In a thyristor dc chopper, which type of commutation results in best performance? (a) voltage commutation (b) current commutation (c) load commutation (d) supply commutation A dc to dc transistor chopper supplied from a fixed voltage dc source feeds a fixed-resistive-inductive load and a free-wheeling diode. The chopper operates at 1 kHz and 50% duty cycle. Without changing the value of the average dc current through the load, if it is desired to reduce the ripple content of load current, the control action needed will (a) increase the chopper frequency keeping the duty cycle constant (b) increase the chopper frequency and duty cycle in equal ratio (c) decrease only the chopper frequency (d) decrease only the duty cycle A voltage commutated chopper has the following parameters: V s = 200 V, load circuit parameter 1 W, 2 mH, 5 V commutation circuit parameter: L = 25 mH, C = 50 mF. For constant load current at 100 A, the effective on-period and peak current through the main thyristor are respectively: (a) 1000 ms, 200 A (b) 700 ms, 382.8 A (c) 700 s, 282.8 A (d) 1000 ms, 382.8 A In a type-A chopper, source voltage is 100 V, d.c. on-period = 100 ms, off-period = 150 ms and load RLE consists of R = 2 W, L = 5 mH, E = 10 V. For continuous conduction average output voltage and average output current for this chopper are respectively: (a) 40 V, 15 A (b) 66.66 V, 28.33 A (c) 60 V, 25 A (d) 40 V, 20 A Refer the circuit shown in Fig. 8.53 the maximum current in the main SCR can be (given Io = 70.7) (a) 200 A (b) 170.7 A (c) 141.4 A (d) 70.7 A A chopper operating at a fixed frequency is feeding an RL load. As the duty ratio of this chopper is increased from 25% to 75%, the ripple in the load current (a) remains constant (b) decreases, reaches a minimum and 50% duty ratio and then increases (c) increases, reaches a maximum at 50% duty ratio and then decreases (d) keeps on increasing as duty ratio is increased.
8.11
8.12
8.13
8.14
8.15
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8.17 In dc choppers, the waveform for (a) input voltage is continuous and output voltage is discontinuous (b) input voltage is discontinuous and output voltage is continuous (c) input voltage as well as output voltage both are continuous (d) input voltage as well as output voltage both are discontinuous 8.18 In the chopper circuit shown, Fig. MCQ. 8.18 the input dc voltage has a constant value V s. The output voltage V 0 is assumed ripple-free. The switch S is operated with a switching time period T and a duty ratio D. What is the value of D at the boundary of continuous and discontinuous conduction of the inductor current iL ?
(a) D = 1 V s /V 0 (c) D = 1
(b) D = 2L/R T
2L R -T (d) R = RL L 8.19 In PWM method of controlling the average output voltage in a chopper the ontime is varied but the chopping frequency is (a) varied (b) kept constant (c) either of these (d) none of these 8.20 A load commutated chopper, fed from 200 V dc source, has a constant load current of 50 A. For a duty cycle of 0.4 and a chopping frequency of 2 kHz, the value of commutating capacitor and the turn-off time for one thyristor pair are respectively
(a) 25 mF, 50 ms (c) 25 m F, 25 ms (b) 50 m F, 50 ms (d) 50 m F, 25 ms
8.21 A dc battery is charged from a constant dc source of 200 V through a chopper. The dc battery is to be charged from its internal emf of 90 to 120 V. The battery has internal resistance of 1 W. For constant charging current of 10 A, the range of duty cycle is (a) 15 to 65 (b) 65 to 8 (c) 8 to 95 (d) None of these 8.22 A dc chopper is fed from 100 V dc. Its load voltage consists of rectangular pulses of duration 1 msec in an overall cycle time of 3 msec. The average output voltage and ripple factor for this chopper are respectively: (a) 25 V, 1 (b) 50 V, 1 (c) 33.33, 1.5 (d) None of these
172
Power Electronics
8.23 A step-down chopper is operated in the continuous conduction mode in steady state with a constant duty ratio D. If V 0 is the magnitude of the dc output voltage and if V s is the magnitude of dc input voltage, the ratio V o /V s is given by D (a) D (b) 1 D (c) 1/1 D (d) 1- D 8.24 When polyphase choppers are used, the output ripple (a) decreases (b) increases (c) remains the same (d) has low frequency 8.25 The features of chopper drives are (a) smooth control but slow response (b) smooth control but fast response (c) fast response with smooth control but less efficient (d) none of these 8.26 Choppers can be used in future electric automobiles (a) for speed control only (b) for braking only (c) for speed control and braking (d) none of these 8.27 Which of the following system is preferred for chopper drives? (a) Constant frequency system (b) Variable frequency system (c) Constant voltage system (d) None of these 8.28 Which of the following systems has a greater possibility of interference with signalling and telephone lines? (a) constant frequency system (b) variable frequency system (c) both are correct (d) none of these 8.29 Chopper controlled dc motor used in underground traction with regenerative braking, the power consumption will be reduced to (a) 3540% (b) 5060% (c) 6070% (d) None of these 8.30 In dc chopper, the load voltage is governed by (a) number of thyristors used in the circuit (b) duty cycle of the circuit (c) dc voltage applied to circuit (d) none of these
Chapter 9: Inverters
9.1 A single phase voltage-source-square wave inverter feeds pure inductive load. The waveform of the load current will be (a) sinusoidal (b) rectangular (c) trapezoidal (d) triangular 9.2 Inverter gain is given by the ratio dc ouput voltage ac o/p voltage (a) (b) ac input voltage ac input voltage dc o/p voltage ac o/p voltage (c) (d) ac I/P voltage dc I/P voltage 9.3 A PWM switching scheme is used with a three phase inverter to (a) reduce the total harmonic distortion with modest filtering (b) minimize the load on DC side (c) increase the life of the batteries (d) reduce low order harmonics and increase high order harmonics
173
9.4 Figure P.9.4(a) shows an inverter circuit with a dc source voltage V s. The semiconductor switches of the inverter are operated in such a manner that the pole voltages V10 and V20 are shown in Fig. P.9.4(b). What is the rms value of the pole-to-pole voltage V12? (a)
Vs f p 2
(b) Vs
f p
(c) Vs
f 2p
(d)
Vs p
Fig. P.9.4
9.5 A single-phase full-bridge voltage-source inverter feels a purely inductive load, as shown where T 1, T 2, T 3, T 4 are power transistors and D1, D2, D3, D4 are feedback diodes. The inverter is operated in square-wave mode with a frequency of 50 Hz. If the average load current is zero, what is the time duration of conduction of each feedback diode in a cycle? (a) 5 msec (b) 10 msec (c) 20 msec (d) 2.5 msec
Fig. P.9.5
174
9.6
Power Electronics
A three-phase voltage source inverter supplies a purely inductive three-phaseload. Upon fourier analysis, the output voltage waveform is found to have an hth order harmonic of magnitude a h times that of the fundamental frequency component (ah < 1). The load current then would have an h-th order harmonic of magnitude (a) zero (b) ah times the fundamental frequency component (c) h ah times the fundamental frequency component (d) ah/h times the fundamental frequency component Consider the following statements: The diodes in a voltage source inverter (McMurray Inverter) should be able to: 1. Withstand a large voltage in the reverse direction 2. Carry the commutating current excess of load current 3. Provide the required reverse-bias to the outgoing thyristor 4. Feedback the reactive current to the source. Of these statements: (a) 1, 2 and 3 are correct (b) 1, 3 and 4 are correct (c) 2, 3, and 4 are correct (d) 1, 2 and 4 are correct In the inverter circuit shown in Fig. P 9.8, if the SCRs are fired at delayed angles, the frequency of the output waveform will (a) increase (b) remain the same (c) decrease (d) depend upon which SCR is fired first
9.7
9.8
Fig. P.9.8
9.9
In the above circuit, if SCR1 is ON and then SCR1 is fired, the anode voltage of SCR1 will become nearly equal to (b) V dc (c) 12 V (d) zero (a) + V dc 9.10 In the above circuit, if SCR1 is ON the capacitor C will (a) charge with terminal 2 as positive (b) charge with terminal 1 as positive (c) not charge at all unless SCR2 is also turned ON (d) make SCR2 ON.
175
9.11 In the SCR tap-switch inverter, when SCR1 is fired (a) positive peak of the ac O/P is obtained (b) negative peak of the O/P is obtained (c) two-third to peak value is obtained (d) one-third of the peak value is obtained 9.12 In Fig. P.9.12, the function tap switching firing sequence of SCRs to obtain positive half-cycle is (a) 1-2-3-4-5 (b) 5-3-1-3-5 (c) 6-4-2-4-6 (d) 6-5-4-3-2
Fig. P.9.12
9.13 In Fig. P.9.12 the switching frequency of firing the six SCRs should be (a) same as the desired O/P frequency (b) three times the O/P frequency (c) five times the O/P frequency (d) ten times the O/P frequency 9.14 In Fig. P.9.12, the number of SCRs conducting at a time in one cycle is (a) 1 (b) 2 (c) 3 (d) 5 9.15 If, for a single phase half-bridge inverter, the amplitude of output voltage is Vs and the output power is p, then their corresponding values for a single-phase full bridge inverter are (a) V s p (b) V s /2, p/2 (c) 2V s, 2p (d) None of these 9.16 In voltage source inverters (a) load voltage waveform V 0 depends on load impedance Z, whereas load current waveform i0 does not depend on Z (b) both V 0 and i0 depend on Z (c) V 0 does not depend on Z whereas i0 depends on Z (d) none of these 9.17 A single phase full-bridge inverter can operate in load commutation mode in case load consists of (a) RLC overdamped (b) RLC underdamped (c) RLC critically damped (d) None of these 9.18 A single phase bridge inverter delivers power to series connected RLC load with R = 2 ohm, wL = 8 ohm. For this inverter load combination, load commutation is possible in case the magnitude of 1/WC in ohms is (a) 10 (b) 8 (c) 6 (d) zero
176
Power Electronics
9.19 The single pulse modulation of PWM inverters, third harmonic can be eliminated if pulse width is equal to (a) 30 (b) 60 (c) 120 (d) None of these 9.20 In single-pulse modulation of PWM inverters fifth harmonic can be eliminated if pulse-width is equal to (a) 30 (b) 72 (c) 36 (d) 108 9.21 In single-pulse modulation of PWM inverters, the pulse width is 120. For an input voltage of 220 V dc, the rms value of the output voltage is (a) 179.63 V (b) 254.04 V (c) 127.02 V (d) None of these 9.22 A voltage source inverter is normally employed when (a) source inductance is large and load inductance is small (b) source inductance is small and load inductance is small (c) both source and load inductance are small (d) both source and load inductances are large 9.23 In resonant pulse inverters (a) dc output voltage variation is wide (b) the frequency is low (c) output voltage is never sinusoidal (d) dc saturation of transformer core is minimised 9.24 In multiple-pulse modulation used in PWM inverters, the amplitudes of reference square-wave and triangular carrier wave are respectively 1 V and 2 V. For generating 5 pulses per half-cycle, the pulse width should be (a) 36 (b) 24 (c) 18 (d) 12 9.25 In sinusoidal-pulse modulation, used in PWM inverters amplitude and frequency for triangular carrier and sinusoidal reference signals are respectively 5 V, 1 kHz and 1 V, 50 Hz. If zeros of the triangular carrier and reference sinusoid coincide, then the modulation index and order of significant harmonics are respectively (a) 0.2, 9 and 11 (b) 0.4, 9 and 11 (c) 0.2, 17, and 19 (d) None of these 9.26 Which of the following statements is correct in connection with inverters (a) voltage source inverter and current source inverter, both require feedback diode (b) only current source inverter requires feedback diodes (c) GTOs can be used in current source inverter (d) only VSI requires feedback diodes 9.27 In a constant source inverter, if frequency of output voltage is f Hz, then frequency of voltage input to constant source inverter is (a) f (b) 2f (c) 3f (d) 4f 9.28 In an inverter with fundamental output frequency of 50 Hz, if third harmonic is eliminated, then frequencies of other components in the output voltage wave, in Hz, would be (a) 250, 350, 500, high frequencies (b) 50, 250, 350, 500 (c) 50, 50, 350, 550 (d) None of these 9.29 A single-phase CSI has capacitor C as the load. For the constant source current, the voltage across the capacitor is (a) square-wave (b) triangular wave (c) step function (d) none of these
177
9.30 In sinusoidal PWM, there are m cycles of the triangular carrier wave in the half-cycle of the reference sinusoidal signal. If zero of the reference sinusoid coincides with zero/peak of the triangular carrier waves then number of pulses generated in each half-cycle are respectively (a) (m 1)/m (b) (m 1)/(m 1) (c) m/m (d) none of these 9.31 Triangular PWM control when applied to three-phase, BJT based voltage source inverter, introduces (a) low order harmonic voltages on dc side (b) very high order harmonic voltages on dc side (c) low order harmonic voltages on ac side (d) very high order harmonic voltages on ac side
10.6 For P-pulse cycloconverter, when the output voltage is reduced in magnitude by firing delay a , then (a) V 0(max) = (c) V 0(max) =
(b) V 0(max) =
178
Power Electronics
10.7 In a 3-pulse cycloconverter with intergroup reactor operating in circulating current mode, both P and N converter groups synthesize the (a) same fundamental sinewave (b) different fundamental sinewave (c) same fundamental cosinewave (d) different fundamental cosinewave
2 V
(d) 200 V
12.2 Resonant converters are basically used to (a) generate large peaky voltage (b) reduce the switching losses (c) eliminate harmonics (d) convert a square-wave into a sine wave 12.3 In series resonant converters, the output is taken in (a) parallel with C of tank circuit
179
(b) parallel with L of tank circuit (c) parallel with C or L of tank circuit (d) series with C or L of tank circuit 12.4 Class E resonant converters are used in (a) low power, very high frequency applications (b) low power low frequency applications (c) high power, very high frequency applications (d) high power, low frequency applications 12.5 Zero voltage and zero current switching helps in (a) minimizing the switching losses (b) increasing the switching losses (c) minimizing the component sizes. (d) increasing the component sizes. 12.6 As a filter, series RLC combination provides (a) bandpass characteristics with a bandwidth directly proportional to the quality factor. (b) bandpass characteristics with a bandwidth inversely proportional to the quality factor (c) bandreject characteristics with a bandwidth directly proportional to the quality factor. (d) bandreject characteristics with a bandwidth inversely proportional to quality factor. 12.7 Zero-current switching requires (a) an upper limit on current flow (b) lower limit on current flow (c) an upper limit on voltage appearing across the switch (d) lower limit on voltage appearing across the switch. 12.8 Resonant inverters are used in (a) high-frequency applications requiring fixed output voltage (b) high frequency applications requiring variable output voltage (c) low-frequency applications requiring fixed output voltage (d) low-frequency applications requiring variable output voltage 12.9 Parallel-resonant inverters are supplied from (a) a constant dc source and give a sinusoidal output voltage (b) a variable dc source and give a sinusoidal output voltage (c) a constant dc source and gives a squarewave output voltage (d) a variable dc source and gives a squarewave output voltage. 12.10 The half-bridge series resonant inverter is operated at an output frequency of 7 kHz. If C1 = C2 = C = 3 mF, L 1 = L 2 = L = 50 mH, R = 2 W and Edc = 220 V, the peak supply current becomes: (a) 35.4 A (b) 55.4 A (c) 100 A (d) 200 A 12.11 The basic series resonant inverter with bidirectional switches has Cr = 2 mF, Lr = 20 mH, R = 0, Edc = 220 V, tq = 12 ms and f 0 = 20 kHz. The peak-to-peak capacitor voltage becomes: (a) 540 V (b) 100 V (c) 440 V (d) 200 V 12.12 Half-bridge series resonant inverter with bidirectional switches is operated with output frequency f 0 = 3.5 kHz, C1 = C2 = 3 m F, L 1 = L 2 = L r = 50 mH, R = 2 W and Edc = 220 V
180
Power Electronics
The rms load current becomes: (a) 100 A (b) 44.1 A (c) 10 A (d) 120 A 12.13 Full-bridge series resonant inverter with bidirectional switches has Cr = 6 m F, Lr = 50 mH, R = 2 W, f 0 = 3.5 kHz and Edc = 220 V. The average supply current is given by (a) 10 A (b) 100 A (c) 70.71 A (d) 170.71 A 12.14 Class E resonant inverter operates at resonance and has f s = 25 kHz, Edc = 12 V and R = 10 W. The optimum value of L r is given by (a) 125 mH (b) 50 mH (c) 25.47 mH (d) 10 mH 12.15 The ZCS buck converter has Edc = 12 V, E0 = 4 V, P0 = 400 mW and f 0max = 50 kHz. The value of Cr is given by (a) 60 nF (b) 40.7 nF (c) 20 nF (d) 100 nF
181
13.10
13.11
13.12 13.13
13.14
A thyrite resistor is used (a) to provide temperature compensation (b) to generate phase shift (c) to rectify very high voltage (d) to bypass voltage surges in equipment Match the functions of the following protective elements in SCR applications: SCR rating Protective element (A) di/dt limit (P) snubber (B) dv /dt limit (Q) heat sink (C) i2 t limit (R) series reactor (D) junction temp. limit (S) to avoid runway speeds on no load The thermal resistance between the body of a power semiconductor device and the ambient is expressed as (a) voltage across the device divided by current through the device. (b) average power dissipated in the device divided by the square of the rms current in the device. (c) average power dissipated in the device divided by the temperature difference from body to ambient. (d) temperature difference from body to ambient divided by average power dissipated in the device. Device used for current protection is (a) the fuse (b) R-C network (c) snubber network (d) none of these The scheme which can be implemented if two thyristor turn-on simultaneously, producing a short circuit on the supply, is known as (a) protection by ringing (b) gate-blocking (c) electronic crowbar (d) all the above As soon as fault current is defected, it can be shunted away by turning on a parallel thyristor until the circuit breaker interrupts the fault current. This scheme is known as (a) Electronic crowbar (b) Protection by ringing (c) Gate blocking (d) none of these Gates are protected against spurious (or noise) firing by using (a) shield cables (b) zener diode across the gate (c) series resistance (d) all the above Gate can be protected against overcurrent by (a) connecting a series resistance (b) zener diode across the gate (c) connecting a series inductor (d) none of these Gate can be protected against overvoltage by (a) zener diode across the gate (b) connecting a series resistance (c) conntecting a series inductor (d) heat sink Suppressor is a device that responds to the rate of change of current or voltage to prevent (a) a fall below a predetermined level (b) rise above a predetermined level (c) overloading (d) none of these
182
Power Electronics
13.19 Overvoltages may be generated by (a) switching of inductive loads (b) variations in supply voltage (c) bad commutation (d) none of these 13.20 Heat sink is a mass of metal that is added to a device for the purpose of (a) absorbing heat (b) dissipating heat (c) absorbing and dissipating heat (d) none of these 13.21 Surge current rating of thyristor specifies the maximum (a) repetitive current with sine wave (b) non-repetitive current with rectangular wave (c) non-repetitive current with sine wave (d) repetitive current with triangular wave 13.22 The object of connecting resistance and capacitance across gate circuit is to protect the thyristor gate against (a) overvoltage (b) dv/dt (c) noise signals (d) none of these
183
(c) a peak value equal to the dc load current (d) a fundamental frequency component, whose rms value is equal to the dc load current. 14.8 In case of armature controlled separately excited dc motor drive with closeloop control, an inner current loop is useful because it (a) limits the speed of the motor to a safe valve (b) helps in improving the drive energy efficiency (c) limits the peak current of the motor to the permissible value (d) reduces the steady-state speed error. 14.9 The advantage of the tachometer speed control method for d.c. motors is that it senses (a) back emf (b) armature current (c) armature voltage (d) speed 14.10 A step down chopper operates from a dc voltage source V s, and feeds a dc motor armature with a back emf Eb. From oscilloscope traces, it is found that the current increases for time tr, falls to zero over time t1, and remains zero for time t0, in every chopping cycle. Then the average dc voltage across the freewheeling diode is (Vs tr + Eb t f ) Vs tr (b) (a) (tr + t f + to ) (tr + t f + to ) (c)
(d)
(Vs tr + Eb [t f + to ]) (t r + t f + t o )
14.11 Armature voltage of a dc motor can be controlled by means of (a) cycloconverters (b) inverters (c) ACDC converters (d) Bridge rectifier circuit with fixed input 14.12 The speed of a dc shunt motor above normal speed can be controlled by (a) armature voltage control method (b) flux control method (c) both the methods (d) none of these 14.13 For controlling the speed of dc motor of 150 hp rating, the following types of converters are normally used (a) single-phase full converters (b) single-phase dual converters (c) three-phase full converters (d) three-phase dual converters 14.14 A motor armature supplied through phase-controlled SCRs receives a smoother voltage shape at (a) high motor speed (b) low motor speeds (c) rated normal motor speeds (d) none of these 14.15 A dc chopper circuit controls the average voltage across the dc motor by (a) controlling the input voltage (b) controlling the field current (c) controlling the line current (d) continuously switching-ON and OFF the motor for fixed durations of tON and tOFF respectively.
184
Power Electronics
14.16 The advantage of tachometer speed control method for dc motors is that, it senses (a) back emf (b) armature current (c) armature voltage (d) speed
Fig. Q.15.7
185
15.8
15.9
15.10 15.11
15.12
15.13
15.14
(a) motor speed will increase (b) motor speed will decrease (c) the speed will not be effected (d) frequency of inverter output will increase In the above system, if the firing angle of the SCRs of the controlled rectifier is delayed, the motor speed will (a) become high (b) become low (c) remain same (d) depend upon firing of inverter Thyristor switching circuits are used (a) to reduce the stator voltage (b) to increase the stator voltage (c) to keep the stator voltage control (d) none of these Variable speed drives using stator voltage control are normally (a) open-loop system (b) closed-loop system (c) both are correct (d) none of these For controlling the speed of three-phase induction motor, the method generally used is (a) fixed voltage fixed frequency method (b) variable voltage variable frequency method (c) fixed voltage variable frequency method (d) none of these The slip power recovery method for the speed control of induction motor (slipcontrol) (a) increase the efficiency (b) decrease the efficiency (c) improves the power-factor (d) none of these. In variable voltage variable frequency control, to achieve constant torque operation below base speed (a) (V/F) has to be kept constant (b) flux has to be increased (c) flux has to be decreased (d) none of these Power factor of synchronous motor can be made leading by adjusting its (a) speed (b) supply voltage (c) excitation (d) supply frequency
frequency
(b)
1 frequency
(c) frequency 16.2 Which of the following types of heating steel? (a) dielectric heating (c) Induction heating 16.3 Uninterruptible supply is used in (a) Computers (c) Essential Instrumentation
(d) (frequency) 2 process is used for surface heating of (b) Infra-red heating (d) Resistance heating (b) Communication links (d) all of the above
186
16.4
Power Electronics
HVDC transmission is preferred to EHV AC because (a) HVDC terminal equipment are inexpensive. (b) VAR compensation is not required in HVDC systems. (c) System stability can be improved. (d) Harmonics problem is avoided. A SMPS operating at 20 kHz to 100 kHz range uses as the main switching elements. (a) SCR (b) MOSFET (c) Transistor (d) SIT The use of high-speed circuit breakers (a) reduces the short circuit current (b) improves system stability (c) decreases system stability (d) increases the short circuit current. Bulk power transmission over long HVDC lines are preferred, on account of (a) low cost of HVDC terminals (b) no harmonic problems (c) minimum line power losses (d) simple protection In a DC transmission line (a) It is necessary for the sending end and receiving end to be operated in synchronism. (b) The effect of inductive and capacitive reactances are greater than in an AC transmission line of the same rating. (c) There are no effects due to inductive and capacitive reactances. (d) Power transfer capability is limited by stability considerations. Static VAR compensators are used to control (a) Only magnitude of the ac line current from the utility. (b) Only phase of the ac line current from the utility. (c) Both magnitude and phase of the ac line current from the utility. (d) None of the above. A metal bar is heated electronically by (a) Emission heating (b) Dielectric heating (c) Induction heating (d) Conductive heating. A rod of mild steel kept inside a coil carrying high frequency currents gets heated due to (a) Dielectric heating (b) Induction heating (c) Both a & b (d) None of these If the frequency of current in copper is increased from 200 MHz to 800 MHz, the skin depth of penetration would become (a) Four times (b) Equal to the radius of conductor (c) Halved (d) Two fold A freshly painted layer may be dried electronically by (a) Conduction heating (b) Induction heating (c) Dielectric heating (d) None of these If the capacitor is loss-free in dielectric heating, the heat produced will be (a) Zero (b) Infinity (c) Proportional to value of capacitance (d) Proportional to the frequency Practically all the heating requirements can be met by an equipment of (a) Coal (b) Gas (c) Oil (d) Electric
16.5 16.6
16.7 16.8
16.9
16.10 16.11
16.12
16.13 16.14
16.15
187
16.16 High frequency induction heating is used for (a) Ferrous metals only (b) Non-ferrous metals (c) Both ferrous and non-ferrous metals (d) None of these 16.17 Induction heating is used for (a) Insulating materials (b) Magnetic materials (c) Conducting materials (d) Both magnetic and non-magnetic material 16.18 For dielectric heating, the range of frequency normally is (a) 10 kHz 100 kHz (b) 100 kHz 1 MHz (c) 1 MHz 10 MHz (d) 10 kHz 40 MHz 16.19 In dielectric heating, non-uniform heating (a) Occurs for higher frequencies (b) Occurs for lower frequencies (c) is independent of frequency (d) Occurs for higher power factors 16.20 In dielectric heating, the rate of heating cannot be increased by increasing the potential gradient because (a) Coupling problems become highly pronounced (b) Very high voltages are not easily available (c) Heating becomes non-uniform (d) Corona takes place
ANSWERS TO MCQS
Chapter-2
(a) 2.2 (d) 2.3 (c) 2.4 (d) (c) 2.6 (b) 2.7 (d) 2.8 (d) (b) (c) Hint: The turn-off time is temperature dependent and doubles between 25C and 125C. 2.11 (b) 2.12 (b) 2.13 (b) 2.14 (b, c) 2.15 (a) 2.16 (b, c) 2.17 (a) [Hint: Pulse Repetition Rate (PRR) = Mark/space ratio = 1/10, Pulse/width = width is more than SCR turn-on-time] 2.18 (b) Hint: Form factor = 2.19 (b)
rms current average current
1 = 0.4 ms = 400 ms 25 103 400 = 36.4 msec. SCR will turn-on if the pulse11
2.20 (b, d)
2.21 (a)
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Power Electronics
2.22 (c) Explanation: Iav = Im/Form factor Form factor for 120 = 1.878 and form factor for 60 = 2.7781 \ Iav is less than 20 A. 2.23 (a) 2.24 (c) 2.25 (d) 2.26 (b) 2.27 (a) 2.28 (c) 2.29 (c) 2.30 (d) 2.31 (d) 2.32 (c) 2.33 (a) 2.34 (b) 2.35 (c) 2.36 (d) 2.37 (a) 2.38 (c) 2.39 (c) 2.40 (c) 2.41 (d) 2.42 (a) 2.43 (c) 2.44 (b) 2.45 (b) 2.46 (b)
Chapter-3
3.1 3.5 3.9 3.13 (a) (c) (a) (d) 3.2 3.6 3.10 3.14 (b) (c) (a) (a) 3.3 (a) 3.7 (c) 3.11 (c) 3.4 (a) 3.8 (d) 3.12 (b)
Chapter-4
4.1 (b) 4.5 (c) 4.9 (b) 4.2 (c) 4.6 (b) 4.10 (a) 4.3 (a) 4.7 (d) 4.4 (c) 4.8 (a)
Chapter-5
5.1 5.5 5.9 5.13 5.17 5.21 5.25 5.29 5.33 5.37 5.41 5.45 5.49 5.53 5.57 (b) (a) (d) (b) (a) (c) (a) (d) (b) (b) (b) (b) (b) (a) (b) 5.2 5.6 5.10 5.14 5.18 5.22 5.26 5.30 5.34 5.38 5.42 5.46 5.50 5.54 5.58 (a) (b) (c) (c) (a) (d) (c) (c) (c) (c) (a) (a) (a) (a) (b) 5.3 5.7 5.11 5.15 5.19 5.23 5.27 5.31 5.35 5.39 5.43 5.47 5.51 5.55 5.59 (c) (d) (b) (d) (c) (b) (b) (a) (c) (a) (b and a) (b) (c) (b) (b) 5.4 5.8 5.12 5.16 5.20 5.24 5.28 5.32 5.36 5.40 5.44 5.48 5.52 5.56 (d) (d) (d) (c) (c) (c) (c) (d) (a) (c) (b) (c) (c) (a)
Chapter-6
6.1 6.5 6.9 6.13 6.17 6.21 (b) (a) (b) (c) (c) (b) 6.2 6.6 6.10 6.14 6.18 6.22 (a) (b) (d) (b) (c) (c) 6.3 6.7 6.11 6.15 6.19 6.23 (d) (b) (d) (c) (c) (d) 6.4 6.8 6.12 6.16 6.20 6.24 (a) (a) (a) (d) (b) (d)
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Explanation: Since
V t = 200 V, therefore V0 =
3 2 Vph
(c) (a) 6.36 (b) 6.37 (d) 6.38 (c) (c) 6.40 (d) (c) 6.42 (positive, a = 167.9) (c) Explanation: The waveform V0 is typical of R-L load and hence d.c. motor. For a pure inductive load, the energy stored in the inductor during off period may extend the waveform upto the next triggering point. 6.44 (d)
p = 233.91 V
3 2 200 3.1414
Chapter-8
8.1 (a) 8.5 (b) 8.9 (a) 8.2 (b) 8.6 (a) 8.10 (a) 8.3 (c) 8.7 (a) 8.11 (a) 8.4 (b) 8.8 (a) 8.12 (b)
C / L = 100 + 200
50 = 382.8 A 25
= Io + Vs C / L = 70.7 + 200
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Power Electronics
Solution: Load voltage Eo =
There are two ways to vary load voltage E0, either by changing f or T on. Here frequency is fixed and T on is varied. As the frequency is kept constant, ripple remains constant 8.16 8.20 8.24 8.28 (d) (a) (a) (b) 8.17 8.21 8.25 8.29 (a) (a) (b) (a) 8.18 8.22 8.26 8.30 (c) (c) (c) (b) 8.19 (a) 8.23 (a) 8.27 (a)
Chapter-9
9.1 9.5 9.9 9.13 9.17 9.21 9.25 9.29 (d) (d) (b) (c) (b) (a) (c) (b) 9.2 9.6 9.10 9.14 9.18 9.22 9.26 9.30 (d) (d) (a) (a) (a) (b) (d) (a) 9.3 9.7 9.11 9.15 9.19 9.23 9.27 9.31 (d) (c) (b) (c) (c) (d) (b) (d) 9.4 9.8 9.12 9.16 9.20 9.24 9.28 (b) (c) (b) (c) (b) (c) (c)
Chapter-10
10.1 (d) 10.5 (a) 10.2 (a) 10.6 (a) 10.3 (d) 10.7 (a) 10.4 (a)
Chapter-11
11.1 (b) 11.5 (d) 11.2 (a) 11.3 (d) 11.4 (a)
Chapter-12
12.1 12.5 12.9 12.13 (d) (a) (a) (c) 12.2 12.6 12.10 12.14 (b) (b) (a) (c) 12.3 12.7 12.11 12.15 (d) (a) (c) (b) 12.4 (a) 12.8 (a) 12.12 (b)
Chapter-13
13.1 (d) 13.4 (a, c) 13.2 (d) Hint = 13.3 (c)
E di = m A/sec dt max L
13.5 (a) 13.6 (b) 13.7 (b) 13.8 (c) 13.9 (c) 13.10 AR, BP, CS, DQ 13.11 (d) Explanation: Temp. of device body = T D = PD q D + T A where qD = thermal resistance
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Chapter-14
14.1 14.5 14.9 14.13 (a) (c) (d) (c) 14.2 14.6 14.10 14.14 (a) (b) (c) (a) 14.3 14.7 14.11 14.15 (c) (c) (c) (d) 14.4 14.8 14.12 14.16 (c) (c) (b) (d)
Chapter-15
15.1 15.5 15.9 15.13 (a) (d) (a) (a) 15.2 15.6 15.10 15.14 (c) (b) (b) (c) 15.3 (b) 15.7 (a) 15.11 (b) 15.4 (a) 15.8 (b) 15.12 (a)
Chapter-16
16.1 16.5 16.9 16.13 16.17 (b) (b) (c) (c) (d) 16.2 16.6 16.10 16.14 16.18 (c) (c) (c) (a) (d) 16.3 16.7 16.11 16.15 16.19 (a) (c) (b) (d) (a) 16.4 16.8 16.12 16.16 16.20 (c) (c) (d) (c) (d)