AO4704 N-Channel Enhancement Mode Field Effect Transistor With Schottky Diode
AO4704 N-Channel Enhancement Mode Field Effect Transistor With Schottky Diode
AO4704 N-Channel Enhancement Mode Field Effect Transistor With Schottky Diode
General Description
The AO4704 uses advanced trench technology to provide excellent R DS(ON), shoot-through immunity and body diode characteristics.This device is suitable for use as a synchronous switch in PWM applications. The co-packaged Schottky Diode boosts efficiency further. AO4704 is Pb-free (meets ROHS & Sony 259 specifications).
Features
VDS (V) = 30V ID = 13 A RDS(ON) < 11.5m (VGS = 10V) RDS(ON) < 13m (VGS = 4.5V) SCHOTTKY VDS (V) = 30V, IF = 3A, VF<0.5V@1A UIS TESTED! Rg,Ciss,Coss,Crss Tested
SOIC-8
S/A S/A S/A G 1 2 3 4 8 7 6 5 D/K D/K D/K D/K
G S A
Absolute Maximum Ratings T =25C unless otherwise noted A Symbol Parameter MOSFET VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 12 TA=25C 13 ID AF Continuous Drain Current TA=70C 10.4 IDM Pulsed Drain Current B 40 VKA Schottky reverse voltage Continuous Forward CurrentAF Pulsed Diode Forward Current Power Dissipation Avalanche Current B
B
Schottky
Units V V A
V A
W A mJ
-55 to 150
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AO4704
Thermal Characteristics Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junction-to-Lead Thermal Characteristics: Schottky Parameter A Maximum Junction-to-Ambient A Maximum Junction-to-Ambient C Maximum Junction-to-Lead
Typ 28 54 21
Max 40 75 30
Typ 36 67 25
Max 40 75 30
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. G. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 6 : Dec 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AO4704
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current. (Set by Schottky leakage) Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=4.5V, ID=12.2A Forward Transconductance VDS=5V, ID=13A 30 Diode + Schottky Forward Voltage IS=1A,VGS=0V Maximum Body-Diode + Schottky Continuous Current Conditions ID=250A, VGS=0V VR=30V VR=30V, TJ=125C VR=30V, TJ=150C VDS=0V, VGS= 12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=13A TJ=125C 0.6 40 9.1 13.3 10.5 37 0.45 0.5 5 3656 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 0.4 322 168 0.86 30.5 VGS=10V, VDS=15V, ID=13A 4.6 8.6 6.2 VGS=10V, VDS=15V, RL=1.1, RGEN=0 IF=13A, dI/dt=100A/s IF=13A, dI/dt=100A/s 4.8 55 7.3 20.3 8.4 9 7 75 11 25 12.5 235 1.1 36 4050 11.5 16.5 13 1.1 Min 30 0.007 3.2 12 0.05 10 20 100 2 mA nA V A m m S V A pF pF pF nC nC nC ns ns ns ns ns nC Typ Max Units V
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance (FET+Schottky) Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode+Schottky Reverse Recovery Time Body Diode+Schottky Reverse Recovery Charge
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. F. The current rating is based on the t 10s junction to ambient thermal resistance rating. G. The Schottky appears in parallel with the MOSFET body diode, even though it is a separate chip. Therefore, we provide the net forward drop, capacitance and recovery characteristics of the MOSFET and Schottky. However, the thermal resistance is specified for each chip separately. Rev 6 : Dec 2006
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
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AO4704
1.8 ID=13A 1.6 1.4 1.2 1.0 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V VGS=10V
30 25 RDS(ON)(m) 20 15 10 5 ID=13A
1E+01
25C
25C
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AO4704
100 RDS(ON) limited 10 ID(A) 10ms 1s 1 T J(Max) =150C T A =25C 0.1 0.1 1 10 10s DC
50 40 30 20 10 0 0.01
0.1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD T on Single Pulse
0.01 0.00001
0.0001
0.001
0.01
0.1
10
100
1000
Pulse Width (S) Figure 11: Normalized Maximum Transient Thermal Impedence
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