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    Irg4Ph50Kdpbf: Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode Short Circuit Rated Ultrafast Igbt

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    nithinmundackal3623
    This document provides specifications for an insulated gate bipolar transistor (IGBT) with an integrated ultrafast soft recovery diode. The IGBT combines low conduction losses with high switching speed and has a short circuit rating of 10μs. It is packaged with an antiparallel diode that minimizes recovery characteristics to reduce switching losses and noise. Key parameters include a 1200V blocking voltage, 2.77V saturation voltage at 15V gate voltage and 24A current, 10μs short circuit withstand time, and 0.24°C/W junction-to-sink thermal resistance. Figures provide characteristic curves and switching waveforms.

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    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd

    Irg4Ph50Kdpbf: Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode Short Circuit Rated Ultrafast Igbt

    Uploaded by

    nithinmundackal3623
    23 views11 pages
    This document provides specifications for an insulated gate bipolar transistor (IGBT) with an integrated ultrafast soft recovery diode. The IGBT combines low conduction losses with high switching speed and has a short circuit rating of 10μs. It is packaged with an antiparallel diode that minimizes recovery characteristics to reduce switching losses and noise. Key parameters include a 1200V blocking voltage, 2.77V saturation voltage at 15V gate voltage and 24A current, 10μs short circuit withstand time, and 0.24°C/W junction-to-sink thermal resistance. Figures provide characteristic curves and switching waveforms.

    Original Description:

    IGBT

    Original Title

    IGBT 40PH50KD

    Copyright

    © Attribution Non-Commercial (BY-NC)

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    This document provides specifications for an insulated gate bipolar transistor (IGBT) with an integrated ultrafast soft recovery diode. The IGBT combines low conduction losses with high switching speed and has a short circuit rating of 10μs. It is packaged with an antiparallel diode that minimizes recovery characteristics to reduce switching losses and noise. Key parameters include a 1200V blocking voltage, 2.77V saturation voltage at 15V gate voltage and 24A current, 10μs short circuit withstand time, and 0.24°C/W junction-to-sink thermal resistance. Figures provide characteristic curves and switching waveforms.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    23 views11 pages

    Irg4Ph50Kdpbf: Insulated Gate Bipolar Transistor With Ultrafast Soft Recovery Diode Short Circuit Rated Ultrafast Igbt

    Uploaded by

    nithinmundackal3623
    This document provides specifications for an insulated gate bipolar transistor (IGBT) with an integrated ultrafast soft recovery diode. The IGBT combines low conduction losses with high switching speed and has a short circuit rating of 10μs. It is packaged with an antiparallel diode that minimizes recovery characteristics to reduce switching losses and noise. Key parameters include a 1200V blocking voltage, 2.77V saturation voltage at 15V gate voltage and 24A current, 10μs short circuit withstand time, and 0.24°C/W junction-to-sink thermal resistance. Figures provide characteristic curves and switching waveforms.

    Copyright:

    Attribution Non-Commercial (BY-NC)
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 11

    PD- 95189

    IRG4PH50KDPbF
    INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
    High short circuit rating optimized for motor control, tsc =10s, VCC = 720V , TJ = 125C, VGE = 15V Combines low conduction losses with high switching speed Tighter parameter distribution and higher efficiency than previous generations IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes Lead-Free

    Features

    Short Circuit Rated UltraFast IGBT


    C

    VCES = 1200V
    G E

    VCE(on) typ. = 2.77V


    @VGE = 15V, IC = 24A

    n-ch an nel

    Benefits
    Latest generation 4 IGBT's offer highest power density motor controls possible HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses This part replaces the IRGPH50KD2 and IRGPH50MD2 products For hints see design tip 97003

    TO-247AC

    Absolute Maximum Ratings


    VCES IC @ TC = 25C IC @ TC = 100C ICM ILM IF @ TC = 100C IFM tsc VGE PD @ TC = 25C PD @ TC = 100C TJ TSTG

    Parameter
    Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Q Clamped Inductive Load Current R Diode Continuous Forward Current Diode Maximum Forward Current Short Circuit Withstand Time Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw.

    Max.
    1200 45 24 90 90 16 90 10 20 200 78 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbfin (1.1 Nm)

    Units
    V

    s V W C

    Thermal Resistance
    Parameter
    RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Case - Diode Case-to-Sink, flat, greased surface Junction-to-Ambient, typical socket mount Weight

    Min.

    Typ.
    0.24 6 (0.21)

    Max.
    0.64 0.83 40

    Units
    C/W

    g (oz)
    04/26/04

    www.irf.com

    IRG4PH50KDPbF
    Electrical Characteristics @ TJ = 25C (unless otherwise specified)
    V(BR)CES
    V(BR)CES/TJ

    VCE(on)

    VGE(th) VGE(th)/TJ gfe ICES VFM IGES

    Parameter Min. Typ. Collector-to-Emitter Breakdown VoltageS 1200 Temperature Coeff. of Breakdown Voltage 0.91 Collector-to-Emitter Saturation Voltage 2.77 3.28 2.54 Gate Threshold Voltage 3.0 Temperature Coeff. of Threshold Voltage -10 Forward Transconductance T 13 19 Zero Gate Voltage Collector Current Diode Forward Voltage Drop 2.5 2.1 Gate-to-Emitter Leakage Current

    Max. Units Conditions V VGE = 0V, IC = 250A V/C VGE = 0V, IC = 1.0mA 3.5 IC = 24A VGE = 15V V IC = 45A See Fig. 2, 5 IC = 24A, TJ = 150C 6.0 VCE = VGE, IC = 250A mV/C VCE = VGE, IC = 250A S VCE = 100V, IC = 24A 250 A VGE = 0V, VCE = 1200V 6500 VGE = 0V, VCE = 1200V, TJ = 150C 3.5 V IC = 16A See Fig. 13 3.0 IC = 16A, TJ = 150C 100 nA VGE = 20V

    Switching Characteristics @ TJ = 25C (unless otherwise specified)


    Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres trr Irr Qrr di(rec)M/dt Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge Diode Peak Rate of Fall of Recovery During tb Min. 10 Typ. 180 25 70 87 100 140 200 3.83 1.90 5.73 67 72 310 390 8.36 13 2800 140 53 90 164 5.8 8.3 260 680 120 76 Max. Units Conditions 270 IC = 24A 38 nC VCC = 400V See Fig.8 110 VGE = 15V TJ = 25C ns 300 IC = 24A, VCC = 800V 300 VGE = 15V, RG = 5.0 Energy losses include "tail" mJ and diode reverse recovery 7.9 See Fig. 9,10,18 s VCC = 720V, TJ = 125C VGE = 15V, RG = 5.0 TJ = 150C, See Fig. 10,11,18 IC = 24A, VCC = 800V ns VGE = 15V, RG = 5.0, Energy losses include "tail" mJ and diode reverse recovery nH Measured 5mm from package VGE = 0V pF VCC = 30V See Fig. 7 = 1.0MHz 135 ns TJ = 25C See Fig. 245 TJ = 125C 14 IF = 16A 10 A TJ = 25C See Fig. 15 TJ = 125C 15 VR = 200V 675 nC TJ = 25C See Fig. 1838 TJ = 125C 16 di/dt = 200A/s A/s TJ = 25C See Fig. TJ = 125C 17

    www.irf.com

    IRG4PH50KDPbF
    30
    F o r b o th :

    25

    LOAD CURRENT (A)

    20
    S q u a re w a v e :

    D u ty c y c le : 5 0 % TJ = 1 2 5 C T sink = 9 0 C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 40 W


    6 0% of rate d volta ge
    I

    15

    10

    Id e a l d io d e s

    0 0.1

    10

    100

    f, Frequency (KHz)

    Fig. 1 - Typical Load Current vs. Frequency


    (Load Current = IRMS of fundamental)

    100

    100

    I C , Collector-to-Emitter Current (A)

    I C, Collector-to-Emitter Current (A)

    TJ = 150 C 
    10

    T  J = 150 C 10

    TJ = 25 C 

    TJ = 25 C 

    V = 15V  20s PULSE WIDTH


    GE 1 10

    V = 50V  5s PULSE WIDTH


    CC 5 6 7 8 9 10 11 12

    VCE , Collector-to-Emitter Voltage (V)

    VGE , Gate-to-Emitter Voltage (V)

    Fig. 2 - Typical Output Characteristics

    Fig. 3 - Typical Transfer Characteristics

    www.irf.com

    IRG4PH50KDPbF
    50 4.0

    VCE , Collector-to-Emitter Voltage(V)

    V = 15V  80 us PULSE WIDTH


    GE

    Maximum DC Collector Current(A)

    40

    3.5

     IC = 48A

    30

    3.0

     IC = 24A
    2.5

    20

     IC = 12A
    2.0

    10

    25

    50

    75

    100

    125

    150

    1.5 -60 -40 -20

    20

    40

    60

    80 100 120 140 160

    TC , Case Temperature ( C)

    TJ , Junction Temperature ( C)

    Fig. 4 - Maximum Collector Current vs. Case Temperature

    Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature

    Thermal Response (Z thJC )

    D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 SINGLE PULSE  (THERMAL RESPONSE)

    0.01

    0.001 0.00001

    
    Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.0001 0.001 0.01

    
    P DM t1 t2 1

    t1 , Rectangular Pulse Duration (sec)

    Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case

    www.irf.com

    IRG4PH50KDPbF
    4000

    VGE , Gate-to-Emitter Voltage (V)

    C, Capacitance (pF)

    3000

    
    VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc

    20

    
    VCC = 400V I C = 24A

    16

    Cies 

    12

    2000

    1000

    Coes  Cres 
    1 10 100

    VCE , Collector-to-Emitter Voltage (V)

    40

    80

    120

    160

    200

    QG , Total Gate Charge (nC)

    Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage

    Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage

    7.0

    Total Switching Losses (mJ)

    6.6

    Total Switching Losses (mJ)

    V CC = 800V 960V V GE = 15V TJ = 25 C I C = 24A

    100

    
    5.0 RG = Ohm VGE = 15V 800V VCC = 960V

     IC = 48 A
    10

    6.2

     IC = 24 A  IC = 12 A

    5.8

    5.4

    10

    20

    30

    40

    50

    1 -60 -40 -20

    20

    40

    60

    80 100 120 140 160

    RG R ,G Gate Resistance (Ohm) , Gate Resistance ()

    TJ , Junction Temperature ( C )

    Fig. 9 - Typical Switching Losses vs. Gate Resistance

    Fig. 10 - Typical Switching Losses vs. Junction Temperature

    www.irf.com

    IRG4PH50KDPbF
    20

    Total Switching Losses (mJ)

    I C, Collector Current (A)


    20 30 40 50

    15

    
    RG TJ VCC CC VGE

    = 5.0 Ohm = 150 C = 800V 960V = 15V

    1000

    
    VGE = 20V T J = 125 o C

    100

    10

    10

    SAFE OPERATING AREA


    0 10 1 1 10 100 1000 10000

    I C , Collector Current (A)

    VCE , Collector-to-Emitter Voltage (V)

    Fig. 11 - Typical Switching Losses vs. Collector Current


    1000

    Fig. 12 - Turn-Off SOA

    Instantaneous Forward Current ( A )

    100

    T J = 150C
    10

    T J = 125C T J = 25C

    1 0.0 2.0 4.0 6.0 8.0

    F orward V oltage D rop - V F M (V )

    Fig. 13 - Typical Forward Voltage Drop vs. Instantaneous Forward Current

    www.irf.com

    300

    40

    IRG4PH50KDPbF
    VR = 200 V T J = 125C T J = 25C

    VR = 200V T J = 125C T J = 25C


    30 200

    I F = 1 6A I F = 8 .0 A

    I R R M - (A )

    trr - (ns)

    IF = 3 2 A

    20

    I F = 32A I F = 16 A I F = 8 .0A

    100 10

    0 100

    d i f /dt - (A / s)

    1000

    0 100

    di f /dt - (A / s)

    1000

    Fig. 14 - Typical Reverse Recovery vs. dif/dt


    1200

    Fig. 15 - Typical Recovery Current vs. dif/dt


    1000

    VR = 2 00 V T J = 125C T J = 25C
    900

    VR = 200V T J = 125C T J = 25C

    600

    I F = 16A

    d i(rec )M /d t - (A / s)

    I F = 3 2A

    Q R R - (nC )

    100

    I F = 32 A I F =1 6A I F = 8 .0 A

    I F = 8 .0A
    300

    0 100

    di f /d t - (A / s)

    1000

    10 100

    di f /d t - (A / s)

    1000

    Fig. 16 - Typical Stored Charge vs. dif/dt

    Fig. 17 - Typical di(rec)M/dt vs. dif/dt

    www.irf.com

    IRG4PH50KDPbF
    90% Vge +Vge Same ty pe device as D .U.T.

    V ce

    Ic 80% of Vce 430F D .U .T.

    10% Vce

    9 0 % Ic Ic 5 % Ic

    td (o ff)

    tf

    E o ff =

    t1 + 5 S V c e ic d t t1

    Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode), trr, Qrr, Irr, td(on), tr, td(off), tf
    t1 t2

    Fig. 18b - Test Waveforms for Circuit of Fig. 18a, Defining


    Eoff, td(off), tf

    G A T E V O L T A G E D .U .T . 1 0 % +V g +Vg

    Ic

    trr

    Q rr =

    icdt

    trr id d t tx

    tx 10% Vcc Vce Vcc 1 0 % Ic 9 0 % Ic D UT VO LTAG E AN D CU RRE NT Ip k V pk

    1 0 % Irr V cc

    Irr

    Ic D IO D E R E C O V E R Y W A V E FO R M S

    td (o n )

    tr

    5% Vce t2 E o n = V ce ie d t t1

    E re c = D IO D E R E V E R S E REC OVERY ENER GY t3 t4

    t1

    t2

    Vcicdt

    t4 V d id d t t3

    Fig. 18c - Test Waveforms for Circuit of Fig. 18a,


    Defining Eon, td(on), tr

    Fig. 18d - Test Waveforms for Circuit of Fig. 18a,


    Defining Erec, trr, Qrr, Irr

    www.irf.com

    IRG4PH50KDPbF

    V g G A T E S IG N A L D E V IC E U N D E R T E S T C U R R E N T D .U .T .

    V O L T A G E IN D .U .T .

    C U R R E N T IN D 1

    t0

    t1

    t2

    Figure 18e. Macro Waveforms for Figure 18a's Test Circuit

    L 1000V 50V 600 0F 100V Vc*

    D.U.T.

    RL= 0 - 480V

    960V 4 X I C @25C

    Figure 19. Clamped Inductive Load Test Circuit

    Figure 20. Pulsed Collector Current Test Circuit

    www.irf.com

    IRG4PH50KDPbF
    Notes:
    Q Repetitive rating: VGE=20V; pulse width limited by maximum junction temperature (figure 20) R VCC=80%(VCES), VGE=20V, L=10H, RG= 5.0 (figure 19) S Pulse width 80s; duty factor 0.1%. T Pulse width 5.0s, single shot.

    TO-247AC Package Outline


    Dimensions are shown in millimeters (inches)

    TO-247AC Part Marking Information


    EXAMPLE: T HIS IS AN IRFPE30 WITH AS SEMBLY LOT CODE 5657 AS SEMBLED ON WW 35, 2000 IN THE AS SEMBLY LINE "H"
    Note: "P" in assembly line position indicates "Lead-Free"

    INTERNAT IONAL RECTIFIER LOGO AS SEMBLY LOT CODE

    PART NUMBER
    IRFPE30
    56 035H 57

    DAT E CODE YEAR 0 = 2000 WEEK 35 LINE H

    Data and specifications subject to change without notice.

    IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 04/04

    10

    www.irf.com

    Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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