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    BE Assignment-1

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    Siba K Panda
    This document contains 20 short questions and 10 long questions/numerical problems related to basic electronics and semiconductor physics for an assignment. The short questions cover topics like conductors, insulators, and semiconductors; energy bands and levels; silicon band structure; intrinsic and extrinsic semiconductors; doping; n-type and p-type materials; donor and acceptor levels; density of states; effective mass; and carrier concentrations. The long questions include deriving expressions for carrier concentrations, drift current density, and Fermi energy levels as well as solving problems involving band structures, densities of states, and equilibrium carrier concentrations.

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    BE Assignment-1

    Uploaded by

    Siba K Panda
    43 views1 page
    This document contains 20 short questions and 10 long questions/numerical problems related to basic electronics and semiconductor physics for an assignment. The short questions cover topics like conductors, insulators, and semiconductors; energy bands and levels; silicon band structure; intrinsic and extrinsic semiconductors; doping; n-type and p-type materials; donor and acceptor levels; density of states; effective mass; and carrier concentrations. The long questions include deriving expressions for carrier concentrations, drift current density, and Fermi energy levels as well as solving problems involving band structures, densities of states, and equilibrium carrier concentrations.

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    basic electronics

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    5. BE Assignment-1

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    This document contains 20 short questions and 10 long questions/numerical problems related to basic electronics and semiconductor physics for an assignment. The short questions cover topics like conductors, insulators, and semiconductors; energy bands and levels; silicon band structure; intrinsic and extrinsic semiconductors; doping; n-type and p-type materials; donor and acceptor levels; density of states; effective mass; and carrier concentrations. The long questions include deriving expressions for carrier concentrations, drift current density, and Fermi energy levels as well as solving problems involving band structures, densities of states, and equilibrium carrier concentrations.

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    Download as doc, pdf, or txt
    43 views1 page

    BE Assignment-1

    Uploaded by

    Siba K Panda
    This document contains 20 short questions and 10 long questions/numerical problems related to basic electronics and semiconductor physics for an assignment. The short questions cover topics like conductors, insulators, and semiconductors; energy bands and levels; silicon band structure; intrinsic and extrinsic semiconductors; doping; n-type and p-type materials; donor and acceptor levels; density of states; effective mass; and carrier concentrations. The long questions include deriving expressions for carrier concentrations, drift current density, and Fermi energy levels as well as solving problems involving band structures, densities of states, and equilibrium carrier concentrations.

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    © All Rights Reserved
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    of 1

    CENTURION UNIVERSITY OF TECHNOLOGY AND MANAGEMENT

    SCHOOL OF ENGINEERING AND TECHNOLOGY, JATNI


    Department of Electronics and Communication Engineering

    BASIC ELECTRONICS
    ASSIGNMENT-1
    Short questions
    1. What are conductors, insulators and semiconductors? Give examples.
    2. What is the difference between energy level and energy band?
    3. Draw the band splitting of a silicon crystal?
    4. Why the semiconductor is unable to conduct current at 0k with externally applied electric field?
    5. What are elemental and compound Semiconductors? Give examples.
    6. Why is Si preferred over Ge and GaAs in the manufacture of semiconductor devices?
    7. What do you mean by EHP generation and recombination?
    8. What is Intrinsic and extrinsic Semiconductor?
    9. What is doping and why it is necessary?
    10. What is n-type and p-type semiconductor? How they are made?
    11. Draw the band diagram of n-type and p-type semiconductor and show the donor and acceptor energy
    level.
    12. What are donor and acceptor element? Give examples. Why they named so?
    13. What is density of states? Write down its expression in conduction band and valence band.
    14. Explain the concept of effective mass of an electron?
    15. What the Fermi Dirac distribution function describes? Write down the expression for it.
    16. Write down the expression for electron and hole concentration for a semiconductor and define each term.
    17. Derive the expression for intrinsic carrier concentration (ni) for a pure semiconductor.
    18. Does the intrinsic Fermi level lie exactly at the mid gap? Justify your answer.
    19. Define Fermi energy level & show the Fermi energy level of intrinsic, n-type and p-type semiconductor.
    20. What is Mass action law?
    Long questions/Numerical
    1. Describe the energy band splitting of silicon crystal with proper diagram and notations.
    2. What is a semiconductor material? Which are the most commonly used semiconductor materials? Explain
    how the valence electrons of a semiconductor are responsible for current conduction at room
    temperature?
    3. Compare semiconductor, conductor and insulator.
    4. Compare n-type semiconductor and p-type semiconductor.
    5. Derive mathematically the position of Fermi energy level in intrinsic and extrinsic semiconductor..
    6. What is mass action law? For extrinsic n-type semiconductor prove the Mass action law.
    7. Derive that the drift current density of a semiconductor is Jdrift = (nn +pp) eE.
    8. Derive continuity equation and find out the solution when carrier concentration independent of both
    position and time with zero electric field.
    9. For a particular semiconductor, the effective mass of electron is mn=1.4m. If EC-EF=0.25eV, determine
    the effective density of states in conduction band and concentration of free electron in the semiconductor
    at T=300k.
    10. For a silicon semiconductor material, N C = 2.8 1019 cm-3, NV=1.041019cm-3. If we assume the Fermi
    energy level is 0.27eV below the conduction band and the band gap energy is 1.1 eV at T= 300 0K. Then
    calculate the thermal equilibrium concentration of electrons and holes. (Given kT=0.0259eV at 3000K).

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