form a heavier nucleus with release of energy. Which of the two the parent or the daughter nucleus would have higher binding energy per nucleon? 2. Draw the plot of the binding energy per nucleon as a function of mass number for different nuclei. The nuclei lying at the middle flat portion of the curve are more stable. Explain. 3. Show that density of nucleus is independent of its mass number A. 4.Why is the mass of a nucleus less than the sum of the masses of its constituents? 5.The nuclear radius of 13Al27 is 3.6 fermi. Find the nuclear radius of 29Cu64 6. Draw a graph showing the variation of binding energy per nucleon with mass number of different nuclei. Write any two salient features of the curve. How does this curve explain the release of energy both in the processes lf nuclear fission and fusion? 7. Draw a plot of potential energy of a pair of nucleons as a function of their separation. Write two important conclusions which you can draw regarding the nature of nuclear forces. 8. Write three characteristic properties of nuclear force. 9. Briefly describe the multi-step process involved in the generation of energy in the sun. 10. Calculate for how many years will the fusion of 2 kg deuterium keep 800 W electric lamp glowing. Take the reaction of fusion as 2 1H + 1H2 → 2He3 + 0n1 + 3.27 MeV 11. Differentiate between nuclear fission and nuclear fusion. Worksheet – 6 Semiconductor Electronics 1.What is meant by energy band gap in a solid? Draw the energy band diagram for conductors, insulators and semiconductors. 2. Explain how the width of depletion layer in a p- n junction diode changes when the junction is (i) forward biased (ii) reverse biased.
3. Explain how an intrinsic semiconductor can be
converted into (i) N-type and (ii) P-type semiconductor. Give one example of each and their energy band diagrams.
z4. Explain briefly, how the characteristics of a p-
n junction diode are obtained in (i) forward bias and (ii) reverse bias.
5. A semiconductor has equal electron and hole
concentration of 6 × 108 /m3. On doping with certain impurity, electron concentration increases to 9 × 108 /m3. (i) Identify the new semiconductor obtained after doping (ii) Calculate the new hole concentration.
6. What is meant by doping of an intrinsic
semiconductor? Name the two types of atoms used for doping of Ge/Si.
7. Distinguish between intrinsic and extrinsic
semiconductors.
8. Draw the V-I characteristics of a p-n junction
diode. Differentiate between the threshold voltage and the breakdown voltage for a diode. Mention the property of a junction diode which makes it suitable for rectification of ac voltages.
9. Carbon and silicon have the same lattice
structure. Then why is carbon an insulator but silicon a semiconductor?
10. When a voltage drop across a pn junction
diode is increased from 0.70 V to 0.71 V, the change in the diode current is 10 mA. What is the dynamic resistance of the diode? What happens the output waveform when a capacitor is connected across the output terminals parallel to the load resistor?
When a capacitor is connected across the
output terminals of a full-wave rectifier parallel to the load resistor, the ripple factor present in the output signal is eliminated and the output becomes almost smooth.