Bistable Multivibrator Design PDF
Bistable Multivibrator Design PDF
Bistable Multivibrator Design PDF
Chapter 9
Bistable Multivibrators
1. Design a fixed-bias bistable multivibrator using Ge transistors having h FE(min) = 50,
V CC = 10 V and V BB = 10 V, V CE(sat) = 0.1 V, V BE(sat) = 0.3 V, I C(sat) = 5 mA and
assume I B(sat) = 1.5I B(min) .
Solution:
RC
10 0.1 V 9.9 V
5 mA
5 mA
1.98 k
V (VBB )
R2
I2
Choose I 2
1
IC 2
10
0.5 mA
0.3 10 10.3 V
=20.6 k
0.5
0.5 mA
I
5 mA
C2
=0.1 mA
hFE min
50
R2
I B 2 min
If Q 2 is in saturation
I B 2 1.5 I B 2 min
= 0.15 mA
I1 I 2 I B 2
= 0.5 mA+0.15 mA 0.65 mA
V V
10 0.3
9.7 V
RC R1 CC
14.92 k
I1
0.65 mA 0.65 mA
R1 ( RC R1 ) RC
14.92 1.98 12.94 k .
2. For a fixed-bias bistable multivibrator shown in Fig. 9p.2 using npn Ge transistor
V CC = 10 V, R C = 1 k, R 1 = 10 k, R 2 = 20 k, h FE(min) = 40, V BB = 10 V. Calculate:
(a) Stable-state currents and voltages assuming Q 1 is OFF and Q 2 is ON and in
saturation. Verify whether Q 1 is OFF and Q 2 is ON or not. (b) the maximum load
current.
R1 R2
R1 R2 10 20 10 20
0.066 3.333 3.267 V
Hence Q 1 is OFF
VC1 VCC 10 V
To verify whether Q 2 is in saturation or not:
Calculate I B2 , I C2
To calculate I B2 .
Consider the cross-coupling circuit shown in Fig.2.1.
I1
=0.88 mA
RC R1
1 10
11 k
I2
0.515 mA
R2
20
20
I B 2 0.88 0.51
0.37 mA
To calculate I C2
Consider the cross-coupling network shown in Fig. 2.2.
I3
10 0.1
9.9 mA
1K
VCE (sat) VBB
I4
R1 R2
10.1
=0.336 mA
30 K
IC 2 I3 I 4
I B 2min
IC 2
hFE min
9.56 mA
=0.24 mA
40
I B 2 I B 2min
Hence Q 2 is verified to be in saturation.
VC 2 0.1 V, VB 2 0.3 V .
V C1 = V CC I 1 R C
= 10 (0.88)1
= 9.12 V
Hence the stable-state currents and voltages are as follows:
V C1 = 9.12 V, V B1 = 3.267 V
V C2 = 0.1 V I B2 = 0.37 mA, I C2 = 9.56 mA
To find the maximum load current or minimum load resistance, consider Fig.2.3.
I B2(min) = 0.2 mA
I 2 = 0.51 mA
I 1(min) = I 2 +I B2(min)
=0.51+0.24
=0.75 mA
V C1(min) = I 1(min) R 1 +V
0.75 10 0.3
7.8 V
VCC VC1(min) 12 7.8
4.2 mA
I
1
RC
I Lmax =I I 1(min) = 4.2 mA 0.75 mA
=3.45 mA
7.8 V
RL (min) =
2.26 k.
3.45 mA
1
1
Assume V EN = VCC 12 4 V
3
3
I C2 = 4 mA
I B2(min) =
4 mA
0.08 mA
50
VEN 2
4 V
0.97 k
I C 2 I B 2 4.12 mA
1.925 k
4 mA
4 mA
1
1
Let I 2 I C 2 4 mA 0.4 mA
10
10
VBN 2 VEN 2 V 4 0.7 4.7 V
RC
VBN 2
4.7 V
11.75 k
0.4 mA
I2
Choose R 2 = 12 k
Find I 2 for this R 2
V
4.7 V
I 2 BN 2
0.392 mA
12.0 K
R2
R2
VCC VBN 2
I2 I B2
12 4.7
7.3 V
14.26 k
0.392 0.12 0.512 mA
RC R1
( RC R1 ) = 14.26 k
R 1 = ( RC R1 ) RC 14.26 1.925 12.33 k
Choose R 1 =12 k
Note: Choose the nearest standard values.
4. A self-bias bistable multivibrator uses Si transistors having h FE(min) = 50. V CC = 18 V,
R 1 = R 2 , I C(sat) = 5 mA. Fix the component values R E , R C , R 1 and R 2.
Solution:
1
1
Assume V EN = VCC 18 6 V
3
3
and I C(sat) = 5 mA
5 mA
0.1 mA
50
Choose I B2 = 1.5I B2(min) =0.15 mA
I B2(min) =
(I C2 +I B2 ) = 5 + 0.15 = 5.15 mA
VEN 2
6V
RE
1.16 k
I C 2 I B 2 5.15 mA
VCC VCE (sat) VEN 2
RC
IC
18 0.3 6 11.7 V
2.34 k
5 mA
5 mA
VBN 2 VEN 2 V 6 0.7 6.7 V
V VBN 2
RC R1 CC
I 2 I B2
V VBN 2
R (V VBN 2 )
RC R1 CC
1 CC
VBN 2
VBN 2 R1 I B 2
I B2
R2
R (18 6.7)
11.3R1
2.34 R1 1
246
8.08 V
4.11 246
V 1 8.08 0.5 8.58 V
To calculate V 2 :
R2
10
0.769
R1 R2 3 10
Rt
R C 1 ( R1 R 2 )
R C 1 R1 R 2
Rt
4 (3 1 0 )
3 .0 5 k
4 3 10
1
41 6
) RE
6.15 k
hFE
40
Vt V ' VCC
I C1
(V ' V 2 )
Rt R
"
E
R2
10
15
8.82 V
( RC1 R1 R2 )
4 3 10
(8.82 0.5)
0.978 mA
2.35 6.15
V2 VBE1 I C1 RE"
V2 0.6 V (0.978 mA)(6.15 k)
0.6 V 6.01 V 6.61 V
Hence for the given Schmitt trigger
V 1 = 8.58 V
V 2 = 6.61 V
6. The self-bias transistor bistable multivibrator shown in Fig. 9p.3 uses npn Si
transistors. Given that V CC = 15 V, V CE(sat) = 0.2 V, V = 0.7 V,
R C = 3 k ,R 1 = 20 k ,R 2 = 10 k ,R E = 500 . Find:
(i) Stable-state currents and voltages and the h FE needed to keep the ON device in
saturation.
(ii) f (max) , if C 1 = 100 pF.
(iii) The maximum value of I CBO that will still ensure one device is OFF and the other is
ON.
(iv)The maximum temperature up to which the multivibrator can work normally if I CBO at
25C = 20 A.
Solution:
(i) To calculate I B2 , consider the base circuit of Q 2, Fig. 6.1.
R2
15 10
150
=
= 4.54
RC R1 R2 3 20 10 33
V
Rthb R2 ( RC R1 ) =
10 (3 20) 230
=6.96 k
3 20 10
33
RC R1 R2
3 20 10
33
3 30 90
Rthc RC (R1 R2 ) =
=2.72 k
33
33
Vthc VCC
10
Now let us draw the base and collector circuits of Q 2 , Fig. 6.3.
(1)
(2)
(3)
(4)
V EN2 = ( I B2 + I C2 )R E = (0.263+3.75)0.5 = 2 V
V CN2 = V EN2 + V CE(sat) = 2 + 0.2 = 2.2 V
V BN2 = V EN2 + V = 2 + 0.7 = 2.7 V.
R2
2.2 10 22
=0.733 V
R1 R2 20 10 30
V BE1 =V BN1 V EN2 = 0.733 2 = 1.26 V
V BN1 = VCN 2
Hence Q 1 is OFF
V CN1 should be V CC. But actually it is less than V CC .
VCC V BN 2 15 2.7
=
0.534 mA.
RC R1
3 20
V CN1 = V CC I 1 R C = 15 (0.534)(3) =13.4 V.
I1=
f max
R1 R2
(20 10)103
750 kHz
2 R1 R2 C1 2 20 103 10 103 100 1012
(iii) V BE1 was calculated as 1.26 V. This voltage exists at the base of Q 1 to keep Q 1
OFF. Till such time the voltage at B 1 of Q 1 is 0 V, let us assume that Q 1 is OFF, Fig.
6.4.To calculate R B and hence I CBO R B , short V EN (though I E1 = 0, there exists a
Dorling Kindersley India Pvt. Ltd 2010
11
voltage V EN at the first emitter) and V CE(sat) sources. From Fig. 6.4, it is seen that R B is
the parallel combination of R 2 and (R 1 +R E ).
10 20.5
6.72 k
10 20.5
I CBo(max) =
1.26 V
0.187 mA 187 A
6.72 k
187
9.35
I CB 0
20
9.35 = 2n
3.23
log 2
0.3
T
n
10
T2 25
3.23
10
T2 25 32.3 57.3C
n=
7. (a) Design a Schmitt trigger shown in Fig. 9p.4 with UTP of 8 V and LTP of 4 V. Si
transistors with h FE = 40 and I C = 5 mA are used. The supply voltage is 18 V. The
ON transistor is in the active region for which V BE = 0.6 V, V CE = 2.0 V. (b) Calculate
R e1 for eliminating hysteresis.
12
13
= 1.48 k
Choose R E = 1.5 k
If Q 2 is in the active region and V CE = 2 V
I C2 R C2 = V CC V CE V EN2
RC 2
Choose R C2 = 1.75 k
1.72 k
5
5 mA
1
I C 2 0.5 mA
10
V
8V
R2 BN 2
=16 k
I2
0.5 mA
I2
I B 2 min
I C 2 5 mA
0.125 mA
hFE
40
VCC VBN 2 18 8
10
14.55 k
( I B 2 I 2 ) 0.6875 0.6875
R1 14.55 k RC1
At LTP = 4 V, consider the Fig. 7.2.
I1
VBN 2
4V
0.25 mA
16 k
R2
I C 1 I E1
V2 VBE1 4 0.6
1.5 k
RE
14
I C1 = 2.27 mA
Writing the KVL equation of the outer loop consisting of R C1 , R 2 and R 1 ,
V CC = (I C1 +I 1 )R C1 +I 1 (R 1 +R 2 ) = (I C1 +I 1 )R C1 +I 1 (14.55 k R C1 +R 2 )
V CC = I C1 R C1 +I 1 (14.55 k +R 2 )
V I (14.55 R2 )
RC1 CC 1
I C1
18 0.25(14.55 16) 10.36
4.56 k
2.27
2.27
R C1 = 4.56 k
R 1 = (R C1 R 1 ) R C1 =14.55 4.56 = 9.99 k
15
16
1.125 k
4
4 mA
1
I 2 I C 2 0.4 mA
10
V
8V
R2 BN 2
=20 k
I2
0.4 mA
I
4 mA
I B 2 min C 2
0.1 mA
hFE
40
I B 2 1.5 I B 2 min 1.5 0.1 0.15 mA
I B 2 I 2 0.15 mA 0.4 mA 0.55 mA
( RC1 R1 )
VCC VBN 2 12 8
4
7.27 k
(I B2 I2 )
0.55 0.55
R1 7.27 k RC1
At LTP = 4 V, consider Fig. 8.2.
17
V2 VBE1
4 0.7
1.8 mA
RE
1.825 k
Writing the KVL equation of the outer loop consisting of R C1 , R 2 and R 1 ,
V CC = (I C1 +I 1 )R C1 +I 1 (R 1 +R 2 )
V CC = (I C1 +I 1 )R C1 +I 1 (7.27 R C1 +R 2 )
V CC = I C1 R C1 +I 1 (7.27+R 2 )
V I 1 (7.27 R2 )
RC1 CC
I C1
12 0.2(7.27 20) 10.36
RC1
3.6 k
1.8
2.27
R 1 =(R C1 R 1 ) R C1
R 1 = 7.27 3.6 = 3.67 k
(ii) To eliminate hysteresis R e1 is added in series with the emitter of Q 1 , Fig. 8.3, such
that
V 1 V 2 = V H = (I C1 +I B1 )R e1
4V
=2.22 k
R e1 =
1.8 mA
I C1 I E1
18
VCC R2
12 20
8.8 V
RC1 R1 R2 3.6 3.67 20
R ' =R 2 //(R C1 +R 1 ) =
20 7.27
5.33 k
27.27
We know,
(1 hFE ) RE
V
R '(1 hFE )( Re 2 RE )
41 1.825
4 (8.8 0.7)
0.5
5.33 (41)( Re 2 1.825)
V2 (V ' VBE 2 )
19
606
80.1 41Re 2
143.5R e2 =325.65
R e2 =2.26 k .
3.5
20