Edctutorial BctII I

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By: Norsang Lama

Sunil Kumar Shrestha


Electronic Devices and Circuits

(BCT II/I)

1. Describe the construction & principle of operation of PN junction diode in forward as well as in
reverse biased conditions, explaining the terms Barrier potential and Depletion Layer.
2. A diode is connected in forward biased mode with a source voltage VS = 5V in series with a
resistance of 500. Find the current flow in the circuit. Given data are: The diodes conducts 1
mA for forward bias voltage of 0.7V and its voltage drop changes by 0.1V for every decade
change in current.
3. Draw a small signal model of the PN junction diode and derive the expression to find the small
signal increment resistance of diode.
4. Draw graphs of IV characteristics of ordinary PN junction diode and zener diode. Draw ac
equivalent model for PN junction diode and derive its ac resistance
5. Draw hybrid- model of BJT as: a) voltage controlled current source, b) current controlled
current source.
6. Design a common emitter amplifier circuit using -independent dc biasing method. Given
parameters are: VCC = 24 VDC, IC = 1.5 mA, = 150, and input and output impedances are
comparatively large. Use appropriate guidelines to support your design.
7. Design -independent type dc biased common collector amplifier, and find its current gain and
input resistance. Given parameters are: VCC = 20 V, IC = 2mA, = 100 and use firm biasing
method. [2068 (R), 8]
8. Derive an expression to find output resistance for emitter unbypassed common emitter
amplifier circuit. [2068 (R), 5]
9. Draw -independent type and emitter resistance unbypassed common emitter amplifier. And
derive its voltage gain using its ac equivalent circuit. [2066 (R), 2+5]
10. Write an expression for voltage gain of common emitter amplifier circuit with emitter
resistance bypassed and give the two reasons to connect bypass capacitor in the circuit.
11. Draw Ebers Moll model and ac equivalent T- model for BJT. [2068 (R), 4]
12. Describe the construction and working principle of N-channel enhancement type MOSFET
with the help of I-V characteristics curve.
13. Describe the principle of operation of EMOSFET with the help of IV characteristics curves and
algebraic expressions. Also show its ac equivalent circuit model. [2068 (R), 7]
14. Derive expressions to obtain drain current and transconductance when MOSFET is operating in
pinch of region.
15. Draw the basic diagram to study the ID VDS characteristics of N channel JFET. And show
different region of operations.
16. Derive an expression to find the tranconductance for JFET. [2068 (R), 2]
17. Why heat sink is necessary in power transistor? Explain with the help of thermal Ohms law or
thermal resistance method. [2068 (R), 4]
18. Draw the circuit diagram of class-A tuned amplifier. And determine the range of frequency in
which it gives maximum gain within -3 dB range?
19. How does cross over distortion occur in class B push pull amplifier? Discuss the change in
effect of cross over distortion when the magnitude of the input signal is reduced, and when the
frequency is decreased. What will you do to eliminate cross over distortion? Discuss the impact
of this remedy in terms of power dissipation
20. What is the maximum efficiency of class B amplifier? State the condition when it occurs. [2068
(R), 4]
21. A class B push pull amplifier is providing a 20 volt peak signal to a 16 (speaker) and power
supply of VCC = 30 volt. Determine the input power, output power, and circuit efficiency
22. What are the tuned amplifiers, and when are they used? How are they characterized? [2066 (B),
3+2]
23. Draw circuit diagram of AB push pull amplifier with darlington pair output stage.
24. Define cross over distortion in class B amplifier. Draw quasi-complementary symmetry class
AB amplifier. And explain how cross over distortion is eliminated in class AB amplifier.
25. Draw a transformer coupled push-pull amplifier employing transformer in the driver circuit and
using two p-n-p transistors. Comment on the power loss in these transistors at no signal
condition.
26. Describe Barkhausen Criteria for oscillation. Write down the general expression for the gain
of a feedback amplifier, and state the condition of oscillation. [2067 (B), 5]
27. Draw a circuit diagram of RC sinusoidal oscillator and explain its working principle. [2065 (R),
2+4]
28. Explain the working principle of square wave generator circuit and determine its oscillation
frequency.
29. Draw Wien Bridge Oscillator circuit and write the expression for frequency of Oscillation.
[2068 (R), 6]
30. Define oscillator. Explain how you can generate square wave using an op-amp. Design this
oscillator for producing an output of 2 kHz frequency. [2066 (R), 2+7+4]
31. Define loading effect in unregulated power supply. Draw a series transistor zener diode voltage
regulator, and state how this problem is taken care of by this circuit.
32. Define the regulated power supply. Determine the voltage stability (input regulation) factor of
variable series voltage regulator circuit with transistor Q2 as error amplifier circuit. [2065 (R),
2+6]
33. Draw series voltage regulator with current limiting circuit and explain how this protection
circuit works.
34. Design a regulator circuit to obtain 16 VDC with input voltage of 25 VDC.
35. Why a full wave rectifier followed with a capacitive filter cannot be used as a reliable dc
source? How can a zener diode be used to improve the performance of this circuit? What are
the limitations of the resulting circuit? Suggest an alternative circuit for a better voltage
regulation, and draw its circuit diagram.
36. Draw and explain the operation of the protection circuit that can be employed in voltage
regulators. How will you choose the value of the sensing resistor R S in such a circuit?
37. Draw a circuit diagram for Bandgap reference voltage source. [2068 (R), 3]
38. Draw a voltage regulator circuit using IC LM 317.

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