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    Power Schottky Rectifier: DSSK 40-008B

    Uploaded by

    Amilcar Burelo
    Bidiodo Alta Potencia Hoja de Datos

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Power Schottky Rectifier: DSSK 40-008B

    Uploaded by

    Amilcar Burelo
    59 views2 pages
    Bidiodo Alta Potencia Hoja de Datos

    Original Title

    L246

    Copyright

    © © All Rights Reserved

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    Bidiodo Alta Potencia Hoja de Datos

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    59 views2 pages

    Power Schottky Rectifier: DSSK 40-008B

    Uploaded by

    Amilcar Burelo
    Bidiodo Alta Potencia Hoja de Datos

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    DSSK 40-008B

    Power Schottky Rectifier IFAV = 2x20 A


    with common cathode VRRM = 80 V
    VF = 0.52 V

    A C A TO-247 AD
    VRSM VRRM Type
    V V
    80 80 DSSK 40-008B A
    C C (TAB)
    A

    A = Anode, C = Cathode , TAB = Cathode

    Symbol Conditions Maximum Ratings Features


    IFRMS 70 A International standard package
    IFAV TC = 130C; rectangular, d = 0.5 20 A Very low VF
    IFAV TC = 130C; rectangular, d = 0.5; per device 40 A Extremely low switching losses
    Low IRM-values
    IFSM TVJ = 45C; tp = 10 ms (50 Hz), sine 500 A Epoxy meets UL 94V-0
    EAS IAS = 20 A; L = 100 H; TVJ = 25C; non repetitive 20 mJ
    Applications
    IAR VA = 1.5VRRM typ.; f = 10 kHz; repetitive 2 A Rectifiers in switch mode power
    (dv/dt)cr 1000 V/s supplies (SMPS)
    Free wheeling diode in low voltage
    TVJ -55...+150 C converters
    TVJM 150 C
    Tstg -55...+150 C Advantages
    Ptot TC = 25C 115 W High reliability circuit operation
    Low voltage peaks for reduced
    Md mounting torque 0.8...1.2 Nm protection circuits
    Weight typical 6 g Low noise switching
    Low losses

    Symbol Conditions Characteristic Values Dimensions see Outlines.pdf


    typ. max.
    IR VR = VRRM; TVJ = 25C 20 mA
    VR = VRRM; TVJ = 100C 150 mA
    VF IF = 20 A; TVJ = 125C 0.52 V
    IF = 20 A; TVJ = 25C 0.58 V
    IF = 40 A; TVJ = 125C 0.68 V
    RthJC 1.1 K/W
    RthCH 0.25 K/W
    Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0%
    Data according to IEC 60747 and per diode unless otherwise specified.
    0531

    IXYS reserves the right to change limits, Conditions and dimensions.

    2005 IXYS All rights reserved 1-2


    DSSK 40-008B

    100 1000 10000


    TVJ=150C
    mA
    A pF

    IR 100 125C CT
    IF

    100C TVJ = 25C


    10 10 1000
    TVJ =
    150C 75C
    125C
    25C
    1 50C

    25C
    1 0.1 100
    0.0 0.2 0.4 0.6 V 0 10 20 30 40 50 60 70 V 0 10 20 30 40 50 60 70 V
    VF VR VR
    Fig. 1 Maximum forward voltage Fig. 2 Typ. value of reverse current Fig. 3 Typ. junction capacitance
    drop characteristics IR vs. reverse voltage VR CT vs. reverse voltage VR

    80 60 10000
    W
    A
    50
    DC A
    60 P(AV)
    d = 0.5 IFSM
    40
    IF(AV)

    30 d= 1000
    40
    DC
    0.5
    20 0.33
    0.25
    20 0.17
    10 0.08

    0 0 100
    0 40 80 120 C 160 0 20 40 60 A 10 100 1000 s 10000
    TC IF(AV) tP
    Fig. 4 Average forward current IF(AV) Fig. 5 Forward power loss
    versus case temperature TC characteristics

    1
    D = 0.5

    0.33
    K/W
    0.25
    ZthJC 0.17

    0.08 Single Pulse


    0.1

    DSSK 40-008B

    0.01
    0.0001 0.001 0.01 0.1s 1
    t
    Fig. 6 Transient thermal impedance junction to case at various duty cycles
    0531

    IXYS reserves the right to change limits, Conditions and dimensions.

    2005 IXYS All rights reserved 2-2

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