Philips Semiconductors Product specification

Rectifier diodes PBYR1025D series

Schottky barrier

FEATURES SYMBOL QUICK REFERENCE DATA

• Low forward volt drop
• Fast switching VR = 20 V/ 25 V
• Reverse surge capability k a
• High thermal cycling performance tab 3 IF(AV) = 10 A
• Low thermal resistance
VF ≤ 0.41 V

GENERAL DESCRIPTION PINNING SOT428

Schottky rectifier diodes in a PIN DESCRIPTION tab
surface mounting plastic envelope.
Intended for use as output rectifiers 1 no connection
in low voltage, high frequency
switched mode power supplies. 2 cathode1
The PBYR1025D series is supplied 3 anode
in the SOT428 surface mounting 2
package. tab cathode
1 3

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
PBYR10 20D 25D
VRRM Peak repetitive reverse - 20 25 V
voltage
VRWM Working peak reverse - 20 25 V
voltage
VR Continuous reverse voltage Tmb ≤ 120 ˚C - 20 25 V
IF(AV) Average rectified forward square wave; δ = 0.5; Tmb ≤ 140 ˚C - 10 A
current
IFRM Repetitive peak forward square wave; δ = 0.5; Tmb ≤ 140 ˚C - 20 A
current
IFSM Non-repetitive peak forward t = 10 ms - 100 A
current t = 8.3 ms - 110 A
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
IRRM Peak repetitive reverse pulse width and repetition rate - 1 A
surge current limited by Tj max
Tj Operating junction - 150 ˚C
temperature
Tstg Storage temperature - 65 175 ˚C

1 It is not possible to make connection to pin 2 of the SOT428 package.

April 1998 1 Rev 1.000

Philips Semiconductors Product specification

Rectifier diodes PBYR1025D series

Schottky barrier

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance junction - - 2 K/W
to mounting base
Rth j-a Thermal resistance junction pcb mounted, minimum footprint, FR4 - 50 - K/W
to ambient board

ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
VF Forward voltage IF = 10 A; Tj = 125˚C - 0.33 0.41 V
IF = 20 A; Tj = 125˚C - 0.43 0.55 V
IF = 20 A - 0.51 0.6 V
IR Reverse current VR = VRWM - 1 5 mA
VR = VRWM; Tj = 100˚C - 22 40 mA
Cd Junction capacitance VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C - 700 - pF

April 1998 2 Rev 1.000

Philips Semiconductors Product specification

Rectifier diodes PBYR1025D series

Schottky barrier

Forward dissipation, PF (W) PBYL1625 Tmb(max) / C IR / A PBYR2025CT

15 120 1A
Vo = 0.32 V
Rs = 0.009 Ohms
D = 1.0 Tj = 150 C
100mA
0.5 125
10 130
0.2 10mA 100
0.1
75
1mA
5 I tp tp 140 50
D=
T
100uA 25
t
T
0 150 10uA
0 5 10 15 20 25 0 5 10 15 20 25
Average forward current, IF(AV) (A) VR / V
Fig.1. Maximum forward dissipation PF = f(IF(AV)); Fig.4. Typical reverse leakage current; IR = f(VR);
square current waveform where IF(AV) =IF(RMS) x √D. parameter Tj

Forward dissipation, PF (W) PBYL1625 Tmb(max) / C Cd / pF PBYR2025CT

12 126 10000
Vo = 0.32 V
Rs = 0.009 Ohms a = 1.57
10 130
1.9
2.2
8 2.8 134
4
6 138 1000

4 142

2 146

0 150 100
0 5 10 15 1 10 100
Average forward current, IF(AV) (A) VR / V
Fig.2. Maximum forward dissipation PF = f(IF(AV)); Fig.5. Typical junction capacitance; Cd = f(VR);
square current waveform where IF(AV) =IF(RMS) x √D. f = 1 MHz; Tj = 25˚C to 125 ˚C.

IF / A PBYR2025CT Transient thermal impedance, Zth j-mb (K/W)

30 10
typ max

25
Tj = 25 C 1
Tj = 125 C
20

15 0.1

10
0.01 PD tp tp
D=
T
5
T t
0 0.001
0 0.2 0.4 0.6 0.8 1 1us 10us 100us 1ms 10ms 100ms 1s 10s
VF / V pulse width, tp (s) PBYL1625

Fig.3. Typical and maximum forward characteristic Fig.6. Transient thermal impedance; Zth j-mb = f(tp).
IF = f(VF); parameter Tj

April 1998 3 Rev 1.000

Philips Semiconductors Product specification

Rectifier diodes PBYR1025D series

Schottky barrier

MECHANICAL DATA

Dimensions in mm : Net Mass: 1.4 g

seating plane

6.73 max 1.1 2.38 max 5.4

tab 0.93 max

4 min
6.22 max
10.4 max
4.6

2 0.5 min
0.5

1 3 0.3
0.8 max 0.5
(x2)
2.285 (x2)

Fig.7. SOT428 : centre pin connected to mounting base.

MOUNTING INSTRUCTIONS

Dimensions in mm

7.0

7.0

2.15 1.5

2.5

4.57

Fig.8. SOT428 : soldering pattern for surface mounting.

Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".

April 1998 4 Rev 1.000

Philips Semiconductors Product specification

Rectifier diodes PBYR1025D series

Schottky barrier

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

April 1998 5 Rev 1.000