BT138 Series
BT138 Series
BT138 Series
DATA SHEET
BT138 series
Triacs
Product specification June 2001
NXP Semiconductors Product specification
1 main terminal 1
T2 T1
2 main terminal 2
3 gate
1 23 G
tab main terminal 2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-600 -800
VDRM Repetitive peak off-state - 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 ˚C - 12 A
ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 95 A
t = 16.7 ms - 105 A
I2t I2t for fusing t = 10 ms - 45 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
Tj Operating junction - 125 ˚C
temperature
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance full cycle - - 1.5 K/W
junction to mounting base half cycle - - 2.0 K/W
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT138- ... ...F ...G
IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 5 35 25 50 mA
T2+ G- - 8 35 25 50 mA
T2- G- - 10 35 25 50 mA
T2- G+ - 22 70 70 100 mA
IL Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 7 40 40 60 mA
T2+ G- - 20 60 60 90 mA
T2- G- - 8 40 40 60 mA
T2- G+ - 10 60 60 90 mA
IH Holding current VD = 12 V; IGT = 0.1 A - 6 30 30 60 mA
VT On-state voltage IT = 15 A - 1.4 1.65 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
ID Off-state leakage current VD = VDRM(max); - 0.1 0.5 mA
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT138- ... ...F ...G
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); 100 50 200 250 - V/µs
off-state voltage Tj = 125 ˚C; exponential
waveform; gate open
circuit
dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 20 - V/µs
commutating voltage IT(RMS) = 12 A;
dIcom/dt = 5.4 A/ms; gate
open circuit
tgt Gate controlled turn-on ITM = 16 A; VD = VDRM(max); - - - 2 - µs
time IG = 0.1 A; dIG/dt = 5 A/µs
= 180
99 C
15 1
120 102.5
90 10
60
10 110
30
5
5 117.5
0 125 0
0 5 10 15 -50 0 50 100 150
IT(RMS) / A Tmb / C
Fig.1. Maximum on-state dissipation, Ptot, versus rms Fig.4. Maximum permissible rms current IT(RMS) ,
on-state current, IT(RMS), where α = conduction angle. versus mounting base temperature Tmb.
ITSM / A IT(RMS) / A
1000 25
20
15
100
dI T /dt limit
10
IT I TSM
T2- G+ quadrant
T time 5
Tj initial = 25 C max
10 0
10us 100us 1ms 10ms 100ms 0.01 0.1 1 10
T/s surge duration / s
Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state
on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal
sinusoidal currents, tp ≤ 20ms. currents, f = 50 Hz; Tmb ≤ 99˚C.
ITSM / A VGT(Tj)
100
VGT(25 C)
1.6
IT ITSM
80 1.4
T time
Tj initial = 25 C max
60 1.2
1
40
0.8
20
0.6
0 0.4
1 10 100 1000 -50 0 50 100 150
Number of cycles at 50Hz Tj / C
Fig.3. Maximum permissible non-repetitive peak Fig.6. Normalised gate trigger voltage
on-state current ITSM, versus number of cycles, for VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
sinusoidal currents, f = 50 Hz.
IGT(Tj) IT / A
40
IGT(25 C) Tj = 125 C typ max
3
T2+ G+ Tj = 25 C
T2+ G-
2.5 30
T2- G- Vo = 1.175 V
T2- G+ Rs = 0.0316 Ohms
2
20
1.5
1
10
0.5
0 0
-50 0 50 100 150 0 0.5 1 1.5 2 2.5 3
Tj / C VT / V
Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic.
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
2.5 1 unidirectional
2 bidirectional
0.1
1.5
P tp
1 D
0.01
0.5 t
0 0.001
-50 0 50 100 150 10us 0.1ms 1ms 10ms 0.1s 1s 10s
Tj / C tp / s
Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-mb, versus
versus junction temperature Tj. pulse width tp.
1.5 dIcom/dt =
15 A/ms 12 9.1 7 5.4 4.2
1 10
0.5
0 1
-50 0 50 100 150 0 50 100 150
Tj / C Tj / C
Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical commutation dV/dt versus junction
versus junction temperature Tj. temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.
MECHANICAL DATA
Dimensions in mm
4,5
Net Mass: 2 g max
10,3
max
1,3
3,7
2,8 5,9
min
15,8
max
3,0 max
3,0
not tinned
13,5
min
1,3
max 1 2 3
(2x) 0,9 max (3x)
0,6
2,54 2,54 2,4
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
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