Philips Semiconductors Product specification

Triacs BT138 series

GENERAL DESCRIPTION QUICK REFERENCE DATA

Glass passivated triacs in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT
envelope, intended for use in
applications requiring high BT138- 500 600 800
bidirectional transient and blocking BT138- 500F 600F 800F
voltage capability and high thermal BT138- 500G 600G 800G
cycling performance. Typical VDRM Repetitive peak off-state 500 600 800 V
applications include motor control, voltages
industrial and domestic lighting, IT(RMS) RMS on-state current 12 12 12 A
heating and static switching. ITSM Non-repetitive peak on-state 95 95 95 A
current

PINNING - TO220AB PIN CONFIGURATION SYMBOL

PIN DESCRIPTION
tab

1 main terminal 1
T2 T1
2 main terminal 2
3 gate
1 23 G
tab main terminal 2

LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
-500 -600 -800
VDRM Repetitive peak off-state - 5001 6001 800 V
voltages
IT(RMS) RMS on-state current full sine wave; Tmb ≤ 99 ˚C - 12 A
ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to
on-state current surge
t = 20 ms - 95 A
t = 16.7 ms - 105 A
I2t I2t for fusing t = 10 ms - 45 A2s
dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 0.2 A;
on-state current after dIG/dt = 0.2 A/µs
triggering T2+ G+ - 50 A/µs
T2+ G- - 50 A/µs
T2- G- - 50 A/µs
T2- G+ - 10 A/µs
IGM Peak gate current - 2 A
VGM Peak gate voltage - 5 V
PGM Peak gate power - 5 W
PG(AV) Average gate power over any 20 ms period - 0.5 W
Tstg Storage temperature -40 150 ˚C
Tj Operating junction - 125 ˚C
temperature

1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 15 A/µs.

September 1997 1 Rev 1.200

Philips Semiconductors Product specification

Triacs BT138 series

THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Rth j-mb Thermal resistance full cycle - - 1.5 K/W
junction to mounting base half cycle - - 2.0 K/W
Rth j-a Thermal resistance in free air - 60 - K/W
junction to ambient

STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT138- ... ...F ...G
IGT Gate trigger current VD = 12 V; IT = 0.1 A
T2+ G+ - 5 35 25 50 mA
T2+ G- - 8 35 25 50 mA
T2- G- - 10 35 25 50 mA
T2- G+ - 22 70 70 100 mA
IL Latching current VD = 12 V; IGT = 0.1 A
T2+ G+ - 7 40 40 60 mA
T2+ G- - 20 60 60 90 mA
T2- G- - 8 40 40 60 mA
T2- G+ - 10 60 60 90 mA
IH Holding current VD = 12 V; IGT = 0.1 A - 6 30 30 60 mA
VT On-state voltage IT = 15 A - 1.4 1.65 V
VGT Gate trigger voltage VD = 12 V; IT = 0.1 A - 0.7 1.5 V
VD = 400 V; IT = 0.1 A; 0.25 0.4 - V
Tj = 125 ˚C
ID Off-state leakage current VD = VDRM(max); - 0.1 0.5 mA
Tj = 125 ˚C

DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BT138- ... ...F ...G
dVD/dt Critical rate of rise of VDM = 67% VDRM(max); 100 50 200 250 - V/µs
off-state voltage Tj = 125 ˚C; exponential
waveform; gate open
circuit
dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C; - - 10 20 - V/µs
commutating voltage IT(RMS) = 12 A;
dIcom/dt = 5.4 A/ms; gate
open circuit
tgt Gate controlled turn-on ITM = 16 A; VD = VDRM(max); - - - 2 - µs
time IG = 0.1 A; dIG/dt = 5 A/µs

September 1997 2 Rev 1.200

Philips Semiconductors Product specification

Triacs BT138 series

Ptot / W BT138 Tmb(max) / C IT(RMS) / A BT138

20 95 15

= 180
99 C
120 102.5
15 1

90 10
60
10 110
30

5
5 117.5

0 125 0
0 5 10 15 -50 0 50 100 150
IT(RMS) / A Tmb / C

Fig.1. Maximum on-state dissipation, Ptot, versus rms Fig.4. Maximum permissible rms current IT(RMS) ,
on-state current, IT(RMS), where α = conduction angle. versus mounting base temperature Tmb.

ITSM / A BT138 IT(RMS) / A BT138

1000 25

20

15
100
dI T /dt limit
10
IT I TSM
T2- G+ quadrant
T time 5

Tj initial = 25 C max
10 0
10us 100us 1ms 10ms 100ms 0.01 0.1 1 10
T/s surge duration / s

Fig.2. Maximum permissible non-repetitive peak Fig.5. Maximum permissible repetitive rms on-state
on-state current ITSM, versus pulse width tp, for current IT(RMS), versus surge duration, for sinusoidal
sinusoidal currents, tp ≤ 20ms. currents, f = 50 Hz; Tmb ≤ 99˚C.

ITSM / A BT138 VGT(Tj)

100 VGT(25 C) BT136
1.6
IT ITSM

80 1.4
T time

Tj initial = 25 C max 1.2

60

1
40
0.8

20
0.6

0 0.4
1 10 100 1000 -50 0 50 100 150
Number of cycles at 50Hz Tj / C

Fig.3. Maximum permissible non-repetitive peak Fig.6. Normalised gate trigger voltage
on-state current ITSM, versus number of cycles, for VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
sinusoidal currents, f = 50 Hz.

September 1997 3 Rev 1.200

Philips Semiconductors Product specification

Triacs BT138 series

IGT(Tj) IT / A BT138
IGT(25 C) BT138 40
3 Tj = 125 C typ max
T2+ G+ Tj = 25 C
T2+ G-
2.5 30
T2- G- Vo = 1.175 V
T2- G+ Rs = 0.0316 Ohms
2

20
1.5

1
10
0.5

0 0
-50 0 50 100 150 0 0.5 1 1.5 2 2.5 3
Tj / C VT / V

Fig.7. Normalised gate trigger current Fig.10. Typical and maximum on-state characteristic.
IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.

IL(Tj) Zth j-mb (K/W) BT138

IL(25 C) TRIAC 10
3

2.5
1 unidirectional

2 bidirectional

0.1
1.5

P tp
1 D

0.01
0.5 t

0 0.001
-50 0 50 100 150 10us 0.1ms 1ms 10ms 0.1s 1s 10s
Tj / C tp / s

Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), Fig.11. Transient thermal impedance Zth j-mb, versus
versus junction temperature Tj. pulse width tp.

IH(Tj) dV/dt (V/us)

1000
IH(25C) TRIAC
3
off-state dV/dt limit
BT138...G SERIES
2.5
BT138 SERIES
100
2 BT138...F SERIES

1.5 dIcom/dt =
15 A/ms 12 9.1 7 5.4 4.2
1 10

0.5

0 1
-50 0 50 100 150 0 50 100 150
Tj / C Tj / C

Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), Fig.12. Typical commutation dV/dt versus junction
versus junction temperature Tj. temperature, parameter commutation dIT/dt. The triac
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dIT/dt.

September 1997 4 Rev 1.200

Philips Semiconductors Product specification

Triacs BT138 series

MECHANICAL DATA

Dimensions in mm
4,5
Net Mass: 2 g max
10,3
max
1,3
3,7

2,8 5,9
min

15,8
max

3,0 max
3,0
not tinned
13,5
min
1,3
max 1 2 3
(2x) 0,9 max (3x)
0,6
2,54 2,54 2,4

Fig.13. TO220AB; pin 2 connected to mounting base.

Notes
1. Refer to mounting instructions for TO220 envelopes.
2. Epoxy meets UL94 V0 at 1/8".

September 1997 5 Rev 1.200

Philips Semiconductors Product specification

Triacs BT138 series

DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.

September 1997 6 Rev 1.200

 MCC TM
  omponents 2SA1013-R
20736 Marilla Street Chatsworth
Micro Commercial Components
 2SA1013-O
  !"#
$ %    !"# 2SA1013-Y
Features
• Lead Free Finish/Rohs Compliant ("P"Suffix designates
Compliant. See ordering information)
• Capable of 0.9Watts of Power Dissipation. PNP
• Collector-current -1.0A
• Collector-base Voltage -160V Epitaxial Silicon
•
x
Operating and storage junction temperature range: -55к to +150к
Case Material: Molded Plastic. UL Flammability
Transistor
Classification Rating 94V-0 and MSL rating 1

Electrical Characteristics @ 25OC Unless Otherwise Specified

Symbol Parameter Min Max Units TO-92MOD
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage -160 --- Vdc
(IC=-1.0mAdc, IB=0) E
V(BR)CBO Collector-Base Breakdown Voltage -160 --- Vdc
(IC=-100uAdc, IE=0)
V(BR)EBO Emitter-Base Breakdown Voltage -6.0 --- Vdc

L
(IE=-10mAdc, IC=0)
ICBO Collector Cutoff Current --- -1.0 uAdc
(VCB=-150Vdc, IE=0) A
ICEO Collector Cutoff Current --- -10 uAdc B
(VCB=-120Vdc, IE=0)
IEBO Emitter Cutoff Current --- -1.0 uAdc C

I
J
M
(VEB=-6.0Vdc, IC=0) D
ON CHARACTERISTICS
hFE(1) DC Current Gain 65 310 ---
(IC=-200mAdc, VCE=-5.0Vdc) F G 1. EMITTER
hFE(2) DC Current Gain 40 --- --- 123 2. COLLECTOR
(IC=-50mAdc, VCE=-5.0Vdc) H 3. BASE
K

VCE(sat) Collector-Emitter Saturation Voltage --- -1.5 Vdc

(IC=-500mAdc, IB=-50mAdc)
N

VBE Base-Emitter Saturation Voltage --- -0.75 Vdc

(IC=-5.0mAdc, VCE=-5.0Vdc)
SMALL-SIGNAL CHARACTERISTICS
fT Transistor Frequency -15 --- MHz
(IC=-200mAdc, VCE=-5.0Vdc, DIMENSIONS
f=30MHz)
INCHES MM
CLASSIFICATION OF HFE (1) DIM MIN MAX MIN MAX NOTE
A --- .030 --- .750
Rank R O Y
B --- .039 --- 1.00
Range 60-120 120-200 200-300 C --- .031 --- .80
D --- .024 --- 0.60
E --- .201 --- 5.10
F .050 1.27
G .050 1.27
H .100 2.54
I .039 1.00
J --- .087 --- 2.20
K --- .024 --- .60
L --- .323 --- 8.20
M --- .413 --- 10.50
N --- .161 --- 4.10

www.mccsemi.com
1 of 2
Revision: 4 2008/02/01
 MCC TM

Micro Commercial Components

Ordering Information
Device Packing
(Part Number)-BP Bulk;500pcs/Bag

***IMPORTANT NOTICE***
Micro Commercial Components Corp . reserves the right to make changes without further notice to any
product herein to make corrections, modifications , enhancements , improvements , or other changes .
Micro Commercial Components Corp . does not assume any liability arising out of the application or
use of any product described herein; neither does it convey any license under its patent rights ,nor
the rights of others . The user of products in such applications shall assume all risks of such use
and will agree to hold Micro Commercial Components Corp . and all the companies whose
products are represented on our website, harmless against all damages.

***APPLICATIONS DISCLAIMER***

Products offer by Micro Commercial Components Corp . are not intended for use in Medical,

Aerospace or Military Applications.

www.mccsemi.com
Revision: 4
2 of 2
2008/02/01
 BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor
April 2014

BC546 / BC547 / BC548 / BC549 / BC550

NPN Epitaxial Silicon Transistor

Features
• Switching and Amplifier
• High-Voltage: BC546, VCEO = 65 V
• Low-Noise: BC549, BC550
• Complement to BC556, BC557, BC558, BC559, and BC560
1 TO-92
1. Collector 2. Base 3. Emitter

Ordering Information
Part Number Marking Package Packing Method
BC546ABU BC546A TO-92 3L Bulk
BC546ATA BC546A TO-92 3L Ammo
BC546BTA BC546B TO-92 3L Ammo
BC546BTF BC546B TO-92 3L Tape and Reel
BC546CTA BC546C TO-92 3L Ammo
BC547ATA BC547A TO-92 3L Ammo
BC547B BC547B TO-92 3L Bulk
BC547BBU BC547B TO-92 3L Bulk
BC547BTA BC547B TO-92 3L Ammo
BC547BTF BC547B TO-92 3L Tape and Reel
BC547CBU BC547C TO-92 3L Bulk
BC547CTA BC547C TO-92 3L Ammo
BC547CTFR BC547C TO-92 3L Tape and Reel
BC548BU BC548 TO-92 3L Bulk
BC548BTA BC548B TO-92 3L Ammo
BC548CTA BC548C TO-92 3L Ammo
BC549BTA BC549B TO-92 3L Ammo
BC549BTF BC549B TO-92 3L Tape and Reel
BC549CTA BC549C TO-92 3L Ammo
BC550CBU BC550C TO-92 3L Bulk
BC550CTA BC550C TO-92 3L Ammo

© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.0 1
 BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Value Unit

BC546 80
VCBO Collector-Base Voltage BC547 / BC550 50 V
BC548 / BC549 30
BC546 65
VCEO Collector-Emitter Voltage BC547 / BC550 45 V
BC548 / BC549 30
BC546 / BC547 6
VEBO Emitter-Base Voltage V
BC548 / BC549 / BC550 5
IC Collector Current (DC) 100 mA
PC Collector Power Dissipation 500 mW
TJ Junction Temperature 150 °C
TSTG Storage Temperature Range -65 to +150 °C

Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.

Symbol Parameter Conditions Min. Typ. Max. Unit

ICBO Collector Cut-Off Current VCB = 30 V, IE = 0 15 nA
hFE DC Current Gain VCE = 5 V, IC = 2 mA 110 800
Collector-Emitter Saturation IC = 10 mA, IB = 0.5 mA 90 250
VCE(sat) mV
Voltage IC = 100 mA, IB = 5 mA 250 600
IC = 10 mA, IB = 0.5 mA 700
VBE(sat) Collector-Base Saturation Voltage mV
IC = 100 mA, IB = 5 mA 900
VCE = 5 V, IC = 2 mA 580 660 700
VBE(on) Base-Emitter On Voltage mV
VCE = 5 V, IC = 10 mA 720
VCE = 5 V, IC = 10 mA,
fT Current Gain Bandwidth Product 300 MHz
f = 100 MHz
Cob Output Capacitance VCB = 10 V, IE = 0, f = 1 MHz 3.5 6.0 pF
Cib Input Capacitance VEB = 0.5 V, IC = 0, f = 1 MHz 9 pF
BC546 / BC547 / BC548 VCE = 5 V, IC = 200 μA, 2 10
Noise BC549 / BC550 f = 1 kHz, RG = 2 kΩ 1.2 4.0
NF dB
Figure BC549 VCE = 5 V, IC = 200 μA, 1.4 4.0
BC550 RG = 2 kΩ, f = 30 to 15000 MHz 1.4 3.0

hFE Classification
Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800

© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.0 2
 BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics

100 100

IB = 400μA VCE = 5V

IC[mA], COLLECTOR CURRENT

IC[mA], COLLECTOR CURRENT

80 IB = 350μA
IB = 300μA
10
IB = 250μA
60

IB = 200μA

40 IB = 150μA
1
IB = 100μA
20

IB = 50μA

0 0.1
0 2 4 6 8 10 12 14 16 18 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2

VCE[V], COLLECTOR-EMITTER VOLTAGE VBE[V], BASE-EMITTER VOLTAGE

Figure 1. Static Characteristic Figure 2. Transfer Characteristic

VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE

10000

VCE = 5V
IC = 10 IB
1000
hFE, DC CURRENT GAIN

1000 VBE(sat)

100

100
10
VCE(sat)

1 10
1 10 100 1000 1 10 100 1000

IC[mA], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT

Figure 3. DC Current Gain Figure 4. Base-Emitter Saturation Voltage and

Collector-Emitter Saturation Voltage

100 1000
fT, CURRENT GAIN-BANDWIDTH PRODUCT

VCE = 5V
f=1MHz
IE = 0
Cob[pF], CAPACITANCE

10 100

1 10

0.1 1
1 10 100 1000 0.1 1 10 100

VCB[V], COLLECTOR-BASE VOLTAGE IC[mA], COLLECTOR CURRENT

Figure 5. Output Capacitance Figure 6. Current Gain Bandwidth Product

© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.0 3
 BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor
Physical Dimensions

TO-92 (Bulk)

Figure 7. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf.

© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.0 4
 BC546 / BC547 / BC548 / BC549 / BC550 — NPN Epitaxial Silicon Transistor
Physical Dimensions (Continued)

TO-92 (Ammo, Tape and Reel)

Figure 8. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.

Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf.

For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F_BK.pdf.

© 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com

BC546 / BC547 / BC548 / BC549 / BC550 Rev. 1.1.0 5
 TRADEMARKS

The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.

AccuPower¥ F-PFS¥
®*
AX-CAP®* FRFET® ®
SM
BitSiC¥ Global Power Resource PowerTrench ®
TinyBoost®
Build it Now¥ GreenBridge¥ PowerXS™ TinyBuck®
CorePLUS¥ Green FPS¥ Programmable Active Droop¥ TinyCalc¥
CorePOWER¥ Green FPS¥ e-Series¥ QFET® TinyLogic®
CROSSVOLT¥ Gmax¥ QS¥ TINYOPTO¥
CTL¥ GTO¥ Quiet Series¥ TinyPower¥
Current Transfer Logic¥ IntelliMAX¥ RapidConfigure¥ TinyPWM¥
DEUXPEED® ISOPLANAR¥ ¥ TinyWire¥
Dual Cool™ Making Small Speakers Sound Louder TranSiC¥
EcoSPARK® and Better™ Saving our world, 1mW/W/kW at a time™ TriFault Detect¥
EfficientMax¥ MegaBuck¥ SignalWise¥ TRUECURRENT®*
ESBC¥ MICROCOUPLER¥ SmartMax¥ PSerDes¥
® MicroFET¥ SMART START¥
MicroPak¥ Solutions for Your Success¥
Fairchild® SPM®
MicroPak2¥ UHC®
Fairchild Semiconductor® STEALTH¥
MillerDrive¥ Ultra FRFET¥
FACT Quiet Series¥
MotionMax¥ SuperFET®
FACT® UniFET¥
mWSaver® SuperSOT¥-3
FAST® VCX¥
OptoHiT¥ SuperSOT¥-6
FastvCore¥ VisualMax¥
OPTOLOGIC® SuperSOT¥-8
VoltagePlus¥
FETBench¥ OPTOPLANAR® SupreMOS®
FPS¥ XS™
SyncFET¥
Sync-Lock™ ௝❺™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE
SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN,
WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are 2. A critical component in any component of a life support, device, or
intended for surgical implant into the body or (b) support or sustain system whose failure to perform can be reasonably expected to
life, and (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its
accordance with instructions for use provided in the labeling, can be safety or effectiveness.
reasonably expected to result in a significant injury of the user.

ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation's Anti-Counterfeiting Policy. Fairchild's Anti-Counterfeiting Policy is also stated on our external website, www.fairchildsemi.com,
under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufacturers of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
applications, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild Distributors
are genuine parts, have full traceability, meet Fairchild's quality standards for handling and storage and provide access to Fairchild's full range of up-to-date technical
and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address any warranty issues that may arise.
Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is committed to combat this global
problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Datasheet contains the design specifications for product development. Specifications may change
Advance Information Formative / In Design
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Preliminary First Production
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make
No Identification Needed Full Production
changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
Obsolete Not In Production
The datasheet is for reference information only.
Rev. I68

© Fairchild Semiconductor Corporation www.fairchildsemi.com

 PD - 94149

IRF3205S/L
HEXFET® Power MOSFET
l Advanced Process Technology D
l Ultra Low On-Resistance VDSS = 55V
l Dynamic dv/dt Rating
l 175°C Operating Temperature RDS(on) = 8.0mΩ
l Fast Switching G
l Fully Avalanche Rated ID = 110A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve extremely low on-
resistance per silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of applications.

The D 2 Pak is a surface mount power package capable of

accommodating die sizes up to HEX-4. It provides the highest power
capability and the lowest possible on-resistance in any existing surface
mount package. The D2Pak is suitable for high current applications D2Pak TO-262
because of its low internal connection resistance and can dissipate up IRF3205S IRF3205L
to 2.0W in a typical surface mount application.
The through-hole version (IRF3205L) is available for low-profile
applications.

Absolute Maximum Ratings

Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 110
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 80 A
IDM Pulsed Drain Current  390
PD @TC = 25°C Power Dissipation 200 W
Linear Derating Factor 1.3 W/°C
VGS Gate-to-Source Voltage ± 20 V
IAR Avalanche Current 62 A
EAR Repetitive Avalanche Energy 20 mJ
dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 srew 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75 °C/W
RθJA Junction-to-Ambient (PCB mounted, steady-state)* ––– 40

www.irf.com 1
03/09/01
IRF3205S/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 8.0 mΩ VGS = 10V, ID = 62A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 44 ––– ––– S VDS = 25V, ID = 62A„
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 146 ID = 62A
Qgs Gate-to-Source Charge ––– ––– 35 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 54 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 14 ––– VDD = 28V
tr Rise Time ––– 101 ––– ID = 62A
ns
td(off) Turn-Off Delay Time ––– 50 ––– RG = 4.5Ω
tf Fall Time ––– 65 ––– VGS = 10V, See Fig. 10 „
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S

Ciss Input Capacitance ––– 3247 ––– VGS = 0V

Coss Output Capacitance ––– 781 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 211 ––– pF ƒ = 1.0MHz, See Fig. 5
EAS Single Pulse Avalanche Energy‚ ––– 1050† 264‡ mJ IAS = 62A, L = 138µH

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 110
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 390

(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 62A, VGS = 0V „
trr Reverse Recovery Time ––– 69 104 ns TJ = 25°C, IF = 62A
Qrr Reverse Recovery Charge ––– 143 215 nC di/dt = 100A/µs „
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
Calculated continuous current based on maximum allowable
‚ Starting TJ = 25°C, L = 138µH junction temperature. Package limitation current is 75A.
RG = 25Ω, IAS = 62A. (See Figure 12)
† This is a typical value at device destruction and represents
ƒ ISD ≤ 62A, di/dt ≤ 207A/µs, VDD ≤ V(BR)DSS, operation outside rated limits.
TJ ≤ 175°C
‡This is a calculated value limited to TJ = 175°C.
* When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
2 www.irf.com
 IRF3205S/L
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
I D , Drain-to-Source Current (A)

I D , Drain-to-Source Current (A)

8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100 100

4.5V

10 10
4.5V

20µs PULSE WIDTH 20µs PULSE WIDTH

TJ = 25 °C TJ = 175°C
1 1
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.5
RDS(on) , Drain-to-Source On Resistance

ID = 107A
I D , Drain-to-Source Current (A)

TJ = 25 ° C
2.0
TJ = 175° C
100
(Normalized)

1.5

1.0
10

0.5

V DS = 25V
20µs PULSE WIDTH VGS = 10V
1 0.0
4 6 8 10 12 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( ° C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com 3
IRF3205S/L
6000 16
VGS = 0V, f = 1 MHZ ID = 62A

VGS , Gate-to-Source Voltage (V)

Ciss = Cgs + Cgd, Cds SHORTED V DS= 44V
14 V DS= 27V
5000 Crss = Cgd
V DS= 11V
Coss = Cds + Cgd
12
C, Capacitance(pF)

4000
Ciss 10

3000 8

6
2000 Coss
4
1000
Crss 2

0 0
1 10 100 0 20 40 60 80 100 120
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 10000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

TJ = 175° C
100
ID , Drain Current (A)

1000

10us

10 100
100us

TJ = 25 ° C
1ms
1 10
10ms
TC = 25 ° C
TJ = 175 °C
V GS = 0 V Single Pulse
0.1 1
0.2 0.8 1.4 2.0 2.6 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage

4 www.irf.com
 IRF3205S/L
RD
120 VDS
LIMITED BY PACKAGE VGS
D.U.T.
100 RG
+
V DD
ID , Drain Current (A)

-
80
10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
60

Fig 10a. Switching Time Test Circuit

40
VDS

20 90%

0
25 50 75 100 125 150 175
TC , Case Temperature ( ° C) 10%
VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature

1
Thermal Response(Z thJC )

D = 0.50

0.20

0.1 0.10

0.05 PDM

SINGLE PULSE t1
0.02 (THERMAL RESPONSE)
0.01 t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak TJ = P DM x ZthJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com 5
IRF3205S/L
500

EAS , Single Pulse Avalanche Energy (mJ)

15V ID
TOP 25A
44A
400 BOTTOM 62A
L D R IV E R
VDS

300
RG D .U .T +
- VD D
IA S A
20V
tp 0 .0 1 Ω 200

Fig 12a. Unclamped Inductive Test Circuit

100

V (B R )D S S
tp 0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( ° C)

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

IAS

Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit

6 www.irf.com
 IRF3205S/L
Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

www.irf.com 7
IRF3205S/L

D2Pak Package Outline

10.54 (.415) -B- 10.16 (.400)

10.29 (.405) 4.69 (.185) REF.
1.40 (.055) 4.20 (.165)
-A- 1.32 (.052)
M A X. 1.22 (.048)
2
6.47 (.255)
6.18 (.243)

1.78 (.070) 15.49 (.610) 2.79 (.110)

1.27 (.050) 1 3 14.73 (.580) 2.29 (.090)

5.28 (.208) 2.61 (.103)

4.78 (.188) 2.32 (.091)

8.89 (.350)
1.40 (.055) 1 .39 (.055) REF.
3X
1.14 (.045) 0.93 (.037) 0.55 (.022) 1 .14 (.045)
3X 0.46 (.018)
0.69 (.027)
5.08 (.200 ) 0.25 (.010) M B A M M IN IM U M R E C O M M E N D E D F O O TP R IN T

11.43 (.4 50)

N O TE S : LE A D A S S IG N M E N TS 8.89 (.350)
1 D IM E N S IO N S A F T E R S O LD E R D IP . 1 - G A TE
2 - D R A IN 17.78 (.700)
2 D IM E N S IO N IN G & TO LE R A N C IN G P E R A N S I Y 14.5M , 1982.
3 - SOURCE
3 C O N T R O LLIN G D IM E N S IO N : IN C H .
4 H E A TS IN K & LE A D D IM E N S IO N S D O N O T IN C LU D E B U R R S .
3.81 (.150)

2.54 (.100)
2.08 (.082) 2X
2X

D2Pak Part Marking Information

A
IN TE R N A T IO N A L PART NUMBER
R E C TIF IE R
F530S
LOGO
9246
9B 1M D A TE C O D E
(Y Y W W )
ASSEMBLY
YY = YEAR
LOT CODE
W W = W EEK
8 www.irf.com
 IRF3205S/L

TO-262 Package Outline

TO-262 Part Marking Information

www.irf.com 9
IRF3205S/L

D2Pak Tape & Reel Information

TRR

1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1.60 (.06 3)
4 .1 0 (.1 6 1 ) 1.50 (.05 9)
3 .9 0 (.1 5 3 ) 0 .3 68 (.014 5 )
0 .3 42 (.013 5 )

F E E D D IR E C T IO N 1 .8 5 (.0 7 3 ) 1 1 .6 0 (.4 57 )
1 .6 5 (.0 6 5 ) 1 1 .4 0 (.4 49 ) 2 4.30 (.9 5 7)
15 .4 2 (.60 9 )
2 3.90 (.9 4 1)
15 .2 2 (.60 1 )
TR L
1.75 (.0 69 )
10 .9 0 (.42 9 ) 1.25 (.0 49 )
10 .7 0 (.42 1 ) 4.7 2 (.1 36 )
1 6 .10 (.6 3 4) 4.5 2 (.1 78 )
1 5 .90 (.6 2 6)

F E E D D IR E C T IO N

13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)

330.00 60.00 (2.362)

(14.1 73) M IN .
M A X.

30.40 (1.197)
NOTES : M AX.
1. C O M F O R M S TO E IA-418. 26 .40 (1.039) 4
2. C O N T R O LLIN G D IM EN S IO N : M ILLIM E T ER . 24 .40 (.961)
3. D IM E N S IO N M E A S U R E D @ H U B .
3
4. IN C LU D E S F LA N G E D IS T O R T IO N @ O U T E R E D G E .

Data and specifications subject to change without notice.

This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.3/01
10 www.irf.com
 HER501 THRU HER508

5.0 AMP HIGH EFFICIENCY RECTIFIERS

VOLTAGE RANGE
50 to 1000 Volts
CURRENT
FEATURES 5.0 Ampere

* Low forward voltage drop DO-27

* High current capability
.220(5.6)
* High reliability
.197(5.0)
* High surge current capability DIA. 1.0(25.4)
* High speed switching MIN.

MECHANICAL DATA
* Case: Molded plastic
.375(9.5)
* Epoxy: UL 94V-0 rate flame retardant
.285(7.2)
* Lead: Axial leads, solderable per MIL-STD-202,
method 208 guranteed
* Polarity: Color band denotes cathode end
* Mounting position: Any 1.0(25.4)
.052(1.3) MIN.
.048(1.2)
DIA.

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

Rating 25 C ambient temperature uniess otherwies specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.

TYPE NUMBER HER501 HER502 HER503 HER504 HER505 HER506 HER507 HER508 UNITS
Maximum Recurrent Peak Reverse Voltage 50 100 200 300 400 600 800 1000 V
Maximum RMS Voltage 35 70 140 210 280 420 560 700 V
Maximum DC Blocking Voltage 50 100 200 300 400 600 800 1000 V
Maximum Average Forward Rectified Current
.375"(9.5mm) Lead Length at Ta=50 C 5.0 A
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method) 200 A
Maximum Instantaneous Forward Voltage at 5.0A 1.0 1.3 1.85 V
Maximum DC Reverse Current Ta=25 C 10 A
at Rated DC Blocking Voltage Ta=100 C 200 A
Maximum Reverse Recovery Time (Note 1) 50 75 nS
Typical Junction Capacitance (Note 2) 75 pF
Operating and Storage Temperature Range TJ, TSTG -65 +150 C

NOTES:

1. Reverse Recovery Time test condition: IF=0.5A, IR=1.0A, IRR=0.25A

2. Measured at 1MHz and applied reverse voltage of 4.0V D.C.

146
 RATING AND CHARACTERISTIC CURVES (HER501 THRU HER508)

FIG.1-TYPICAL FORWARD FIG.2-TYPICAL FORWARD CURRENT

DERATING CURVE
CHARACTERISTICS
10

AVERAGE FORWARD CURRENT,(A)

6

5
03

05
R5

08
5
ER

5
E
INSTANTANEOUS FORWARD CURRENT,(A)

ER
~H

~H

4
~H
01

04

06
R5

1.0
R5

R5

Single Phase
HE

HE

3
HE

Half Wave 60Hz

Resistive Or Inductive Load
2
0.375"(9.5mm) Lead Length

1
.1 0
0 25 50 75 100 125 150 175

Tj=25 C AMBIENT TEMPERATURE ( C)

Pulse Width 300us
1% Duty Cycle

.01

FIG.4-MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

.001 250
PEAK FORWAARD SURGE CURRENT,(A)

.4 .6 .8 1.0 1.2 1.4 1.6 1.8

FORWARD VOLTAGE,(V)
200
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
150
RECOVERY TIME CHARACTERISTICS
Tj=25 C 8.3ms Single Half
50W 10W
NONINDUCTIVE NONINDUCTIVE
100 Sine Wave

JEDEC method

(+) ( ) 50
25Vdc D.U.T. PULSE
(approx.) GENERATOR
(NOTE 2)
( ) 0
(+)
1W 1 5 10 50 100
OSCILLISCOPE
NON-
(NOTE 1)
INDUCTIVE
NUMBER OF CYCLES AT 60Hz

NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.

2. Rise Time= 10ns max., Source Impedance= 50 ohms.

FIG.5-TYPICAL JUNCTION CAPACITANCE

175

trr
150
JUNCTION CAPACITANCE,(pF)

+0.5A |
|
| 125
|
|
0 |
| 100
|
-0.25A
75

50

-1.0A 25
1cm
SET TIME BASE FOR
0
50 / 10ns / cm .01 .05 .1 .5 1 5 10 50 100

REVERSE VOLTAGE,(V)

147