Ordering number : ENA0890 TF218THC

SANYO Semiconductors
DATA SHEET

N-channel Silicon Junction FET

TF218THC Electret Condenser Microphone
Applications
Features
• Ultrasmall package facilitates miniaturization in end products.
• Especially suited for use in electret condenser microphone for audio equipments and telephones.
• Excellent voltage characteristics.
• Excellent transient characteristics.
• Adoption of FBET process.
• Halogen free compliance.

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Gate-to-Drain Voltage VGDO --20 V
Gate Current IG 10 mA
Drain Current ID 1 mA
Allowable Power Dissipation PD 100 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Marking: A

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
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thereof. If you should intend to use our products for applications outside the standard applications of our
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consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82907GB TI IM TC-00000868 No. A0890-1/5
 TF218THC

Electrical Characteristics at Ta=25°C

Ratings
Parameter Symbol Conditions Unit
min typ max
Gate-to-Drain Breakdown Voltage V(BR)GDO IG=--100µA --20 V
Cutoff Voltage VGS(off) VDS=5V, ID=1µA --0.2 --0.6 --1.0 V
Drain Current IDSS VDS=5V, VGS=0V 140* 350* µA
Forward Transfer Admittance yfs VDS=5V, VGS=0V, f=1kHz 0.5 1.0 mS
Input Capacitance Ciss VDS=5V, VGS=0V, f=1MHz 3.5 pF
Reverse Transfer Capacitance Crss VDS=5V, VGS=0V, f=1MHz 0.65 pF
[Ta=25°C, VCC=4.5V, RL=1kΩ, Cin=15pF, See specified Test Circuit.]
Voltage Gain GV VIN=10mV, f=1kHz --3.0 dB
Reduced Voltage Characteristic ∆GVV VIN=10mV, f=1kHz, VCC=4.5→1.5V --1.2 --3.5 dB
Frequency Characteristic ∆Gvf f=1kHz to 110Hz --1.0 dB
Input Impedance ZIN f=1kHz 25 MΩ
Output Impedance ZO f=1kHz 1000 Ω
Total Harmonic Distortion THD VIN=30mV, f=1kHz 1.2 %
Output Noise Voltage VNO VIN=0V, A curve --110 dB

* : The TF218THC is classified by IDSS as follows : (unit : µA)

Rank 4 5
IDSS 140 to 240 210 to 350

Package Dimensions Test Circuit

unit : mm (typ)
7031-001 Voltage gain
Frequency Characteristic
Top View Distortion
1.4
Reduced Voltage Characteristic
1kΩ VCC=4.5V
0.2

0.25
3 VCC=1.5V
0.8
1.2

15pF 33µF
+
1 2 0.1
0.2
0.2

0.45 VTVM V THD B A

OSC
0.34

Output Impedance
Bottom View
0.07

1 : Drain
2 : Source
3 : Gate
0.07

SANYO : VTFP

ID -- VDS ID -- VDS
500 500

450 450

400 400
Drain Current, ID -- µA

Drain Current, ID -- µA

350 350

300 300
VGS=0V VGS=0V
250 250

200 200
--0.1V --0.1V
150 150

100
--0.2V 100 --0.2V

50 --0.3V 50 --0.3V
--0.4V --0.5V --0.4V --0.5V
0 0
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5
Drain-to-Source Voltage, VDS -- V IT02310 Drain-to-Source Voltage, VDS -- V IT03015

No. A0890-2/5
 TF218THC
ID -- VGS ID -- VGS
500 400
VDS=5V VDS=5V
450 360

400 320
Drain Current, ID -- µA

Drain Current, ID -- µA
350 280

300 240

250 200
µA
50

°C
3

25
200 = 160
SS A
ID
0µ

C
150 120

5°
25

=7
A
0µ

Ta
100 80

C
15

5°
--2
50 40

0 0
--0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0 --1.0 --0.9 --0.8 --0.7 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 --0
Gate-to-Source Voltage, VGS -- V IT02312 Gate-to-Source Voltage, VGS -- V IT02313
yfs -- IDSS VGS(off) -- IDSS
1.3 -0.70
VDS=5V VDS=5V
Forward Transfer Admittance, yfs -- mS

1.2 VGS=0V -0.65 ID=1µA

f=1kHz

Cutoff Voltage, VGS(off) -- V

1.1 -0.60

1.0 -0.55

0.9 -0.50

0.8 -0.45

0.7 -0.40

0.6 -0.35

0.5 -0.30
0 100 200 300 400 500 0 100 200 300 400 500
Drain Current, IDSS -- µA IT02314 Drain Current, IDSS -- µA IT02315
THD -- VIN PD -- Ta
100 120
THD : VCC=4.5V
Allowable Power Dissipation, PD -- mW

f=1kHz
Total Harmonic Distortion, THD -- %

IDSS : VDS=5.0V 100

10 250µA 80
150µA
I DSS=
60
350µA

1.0 40

20

0.1 0
0 50 100 150 200 0 20 40 60 80 100 120 140 160
Input Voltage, VIN -- mV IT02316 Ambient Temperature, Ta -- °C IT02317
Ciss -- VDS Crss -- VDS
2 5
VGS=0V VGS=0V
Reverse Transfer Capacitance, Crss -- pF

f=1MHz f=1MHz
3
Input Capacitance, Ciss -- pF

10 2

7
1.0
5
7

5
3

3
2
2

1.0 0.1
7 1.0 2 3 5 7 10 2 3 7 1.0 2 3 5 7 10 2 3
Drain-to-Source Voltage, VDS -- V IT03814 Drain-to-Source Voltage, VDS -- V IT03815

No. A0890-3/5
 TF218THC
GV -- IDSS ∆GVV -- IDSS
0 --0.5

Reduced Voltage Characteristic, ∆GVV -- dB

GV : VCC=4.5V ∆GVV : VCC=4.5V→1.5V
VIN=10mV VIN=10mV
--1
RL=1.0kΩ --0.7 f=1kHz
f=1kHz IDSS : VDS=5.0V
Voltage Gain, GV -- dB

--2 IDSS : VDS=5.0V

--0.9

--3
--1.1
--4

--1.3
--5

--1.5
--6

--7 --1.7
0 100 200 300 400 500 0 100 200 300 400 500
Drain Current, IDSS -- µA IT02320 Drain Current, IDSS -- µA IT02321
THD -- IDSS ZIN -- IDSS
2.5 32
THD : VCC=4.5V ZIN :VCC=4.5V
VIN=30mV VIN=10mV
Total Harmonic Distortion, THD -- %

f=1MHz 31 f=1kHz
2.0

Input Impedance, ZIN -- MΩ

IDSS : VDS=5.0V IDSS : VDS=5.0V
30
1.5

29

1.0
28

0.5
27

0 26
0 100 200 300 400 500 0 100 200 300 400 500
Drain Current, IDSS -- µA IT02322 Drain Current, IDSS -- µA IT02323
ZO -- IDSS VNO -- IDSS
960 --111
ZO : VCC=4.5V VNO : VCC=4.5V
VIN=10mV --112 VIN=0V, ACurve
Output Noise Voltage, VNO -- dB

950 f=1kHz RL=1.0kΩ

Output Impedance, ZO -- Ω

IDSS : VDS=5.0V --113 IDSS : VDS=5.0V

940 --114

--115
930
--116

920 --117

--118
910
--119

900 --120
0 100 200 300 400 500 0 100 200 300 400 500
Drain Current, IDSS -- µA IT02324 Drain Current, IDSS -- µA IT02325

No. A0890-4/5
 TF218THC

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This catalog provides information as of August, 2007. Specifications and information herein are subject
to change without notice.

PS No. A0890-5/5