HAL114, HAL115 Hall Effect Sensor Family: Micronas
HAL114, HAL115 Hall Effect Sensor Family: Micronas
HAL114, HAL115 Hall Effect Sensor Family: Micronas
Contents
3 1. Introduction
3 1.1. Features
3 1.2. Family Overview
3 1.3. Marking Code
4 1.4. Operating Junction Temperature Range
4 1.5. Hall Sensor Package Codes
4 1.6. Solderability
4 2. Functional Description
5 3. Specifications
5 3.1. Outline Dimensions
5 3.2. Dimensions of Sensitive Area
5 3.3. Positions of Sensitive Areas
6 3.4. Absolute Maximum Ratings
6 3.5. Recommended Operating Conditions
7 3.6. Electrical Characteristics
8 3.7. Magnetic Characteristics
10 4. Type Descriptions
10 4.1. HAL114
12 4.2. HAL115
14 5. Application Notes
14 5.1. Application Circuit
14 5.2. Ambient Temperature
14 5.3. Extended Operating Conditions
14 5.4. Start-up Behavior
2 Micronas
HAL11x
The HAL 11x family consists of different Hall switches HAL115 bipolar 12
produced in CMOS technology.
1.1. Features
1.3. Marking Code
– operates from 4.5 V to 24 V supply voltage
– overvoltage protection All Hall sensors have a marking on the package surface
(branded side). This marking includes the name of the
– reverse-voltage protection at VDD-pin sensor and the temperature range.
– short-circuit protected open-drain output by thermal
shut down
Type Temperature Range
– operates with static magnetic fields and dynamic mag-
netic fields up to 20 kHz K E C
– stable switching points over a wide supply voltage HAL114 114K 114E 114C
range
HAL115 115K 115E 115C
– the decrease of magnetic flux density caused by rising
temperature in the sensor system is compensated by
a built-in negative temperature coefficient of the mag-
netic characteristics
Micronas 3
HAL11x
The Hall sensors from Micronas are specified to the chip The HAL 11x sensors are monolithic integrated circuits
temperature (junction temperature TJ). which switch in response to magnetic fields. If a
magnetic field with flux lines perpendicular to the
K: TJ = –40 °C to +140 °C sensitive area is applied to the sensor, the biased Hall
plate forces a Hall voltage proportional to this field. The
E: TJ = –40 °C to +100 °C
Hall voltage is compared with the actual threshold level
C: TJ = 0 °C to +100 °C in the comparator. The temperature-dependent bias
increases the supply voltage of the Hall plates and
The relationship between ambient temperature (TA) and adjusts the switching points to the decreasing induction
junction temperature is explained in section 5.2. on page of magnets at higher temperatures. If the magnetic field
14. exceeds the threshold levels, the open drain output
switches to the appropriate state. The built-in hysteresis
eliminates oscillation and provides switching behavior of
1.5. Hall Sensor Package Codes output without bouncing.
HALXXXPA-T
Shunt protection devices clamp voltage peaks at the
Temperature Range: K, E, or C Output-pin and VDD-pin together with external series
Package: SF for SOT-89B resistors. Reverse current is limited at the VDD-pin by an
UA for TO-92UA internal series resistor up to –15 V. No external reverse
(SO for SOT-89A) protection diode is needed at the VDD-pin for reverse
Type: 11x voltages ranging from 0 V to –15 V.
VDD
1
OUT
3
2
GND
4 Micronas
HAL11x
3.1 ±0.2
0.48
0.7 y
2
0.55 1 2 3
0.75 ±0.2
4 ±0.2 14.0
2.6 ±0.1 0.36 min.
min.
0.25 top view
1 2 3
0.42
0.4 0.4
1.53 ±0.05
0.4 1.27 1.27
1.5
(2.54)
3.0
branded side
branded side
45° 0.8
SPGS7002-7-A/2E
0.06 ±0.04
SPGS7001-7-A3/2E
Fig. 3–3:
Fig. 3–1: Plastic Transistor Single Outline Package
Plastic Small Outline Transistor Package (TO-92UA)
(SOT-89A) Weight approximately 0.12 g
Weight approximately 0.04 g Dimensions in mm
Dimensions in mm
4.55 ±0.1
x1 x2
sensitive area
0.125 1.7
3.2. Dimensions of Sensitive Area
0.3 2 y
0.4 mm x 0.2 mm
0.4 0.4
SOT-89A SOT-89B TO-92UA
1.15 ±0.05
0.4 |x2 – x1| / 2 < 0.2 mm
1.5
3.0
y = 0.98 mm y = 0.95 mm y = 1.0 mm
± 0.2 mm ± 0.2 mm ± 0.2 mm
branded side
0.06 ±0.04
SPGS0022-3-A3/2E
Fig. 3–2:
Plastic Small Outline Transistor Package
(SOT-89B)
Weight approximately 0.035 g
Dimensions in mm
Micronas 5
HAL11x
Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the
“Recommended Operating Conditions/Characteristics” of this specification is not implied. Exposure to absolute maxi-
mum ratings conditions for extended periods may affect device reliability.
VO Output Voltage 3 0 24 V
(output switched off)
6 Micronas
HAL11x
3.6. Electrical Characteristics at TJ = –40 °C to +140 °C , VDD = 4.5 V to 24 V, as not otherwise specified in Conditions
Typical Characteristics for TJ = 25 °C and VDD = 12 V
5.0
2.0
2.0
1.0
Micronas 7
HAL11x
Sensor Parameter On point BON Off point BOFF Hysteresis BHYS Unit
Switching type TJ Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
HAL 114 –40 °C 7.5 21.5 36 4.3 17.4 33.2 2.8 4.1 5 mT
HAL 115 –40 °C –10.7 1.4 12.5 –12.5 –1.4 10.7 1.8 2.8 7 mT
Note: For detailed descriptions of the individual types, see pages 10 and following.
The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas
on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching
points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates
can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering
or operating the parts at extreme temperatures.
Please use a sensor of the HAL 5xx family if higher robustness against mechanical stress is required.
mA mA
HAL 11x HAL 11x
15 12
10 TA = –40 °C 10 TA = –40 °C
IDD IDD
TA = 25 °C TA = 25 °C
5 TA = 140 °C 8
TA = 140 °C
0 6
–5 4
–10 2
–15 0
–15 –10 –5 0 5 10 15 20 25 30 V 0 1 2 3 4 5 6 V
VDD VDD
Fig. 3–5: Typical supply current Fig. 3–6: Typical supply current
versus supply voltage versus supply voltage
8 Micronas
HAL11x
mA mV
HAL 11x HAL 11x
12 500
VDD = 12 V
10
IDD VOL 400
VDD = 4.5 V
8
VDD = 24 V
300
IO = 20 mA
6
200
4
IO = 12.5 mA
100
2
0 0
–50 0 50 100 150 °C –50 0 50 100 150 °C
TA TA
Fig. 3–7: Typical supply current Fig. 3–9: Typical output low voltage
versus temperature versus temperature
mV µA
HAL 11x HAL 11x
500 2
10
IO = 12.5 mA VOH = 24 V
VDD = 5 V
1
10
VOL 400 IOH
0
10
300 –1
10
TA = 140 °C
–2
10
200
–3
TA = 25 °C 10
100
–4
TA = –40 °C 10
0
0 5 10 15 20 25 30 V –50 0 50 100 150 °C
VDD TA
Fig. 3–8: Typical output low voltage Fig. 3–10: Typical output leakage current
versus supply voltage versus temperature
Micronas 9
HAL114
4.1. HAL 114 The HAL 114 is the optimal sensor for applications with
one magnetic polarity such as:
The HAL 114 is a unipolar switching sensor (see – solid state switches,
Fig. 4–1).
– contactless solution to replace micro switches,
The output turns low with the magnetic south pole on the – position and end-point detection, and
branded side of the package and turns high if the mag-
netic field is removed. The sensor does not respond to – rotating speed measurement.
the magnetic north pole on the branded side.
BHYS
Magnetic Features:
– operates with static magnetic fields and dynamic mag- Fig. 4–1: Definition of magnetic switching points for
netic fields up to 20 kHz the HAL 114
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas
on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching
points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates
can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering
or operating the parts at extreme temperatures.
Please use a sensor of the HAL 5xx family if a robustness against mechanical stress is required.
10 Micronas
HAL114
mT mT
HAL 114 HAL 114
30 30
VDD = 12 V
BON
BOFF BON
25 BOFF 25
BON
20 20
BOFF
15 15
TA = –40 °C
10 10
TA = 25 °C
TA = 140 °C
5 5
0 0
0 5 10 15 20 25 30 V –50 0 50 100 150 °C
VDD TA
Fig. 4–2: Typical magnetic switching Fig. 4–4: Typical magnetic switching
points versus supply voltage points versus temperature
mT
HAL 114
30
BON
BOFF
25
20
15
TA = –40 °C
10
TA = 25 °C
TA = 140 °C
5
0
3 4 5 6 V
VDD
Micronas 11
HAL115
The HAL 115 is a bipolar switching sensor (see Fig. 4–5). The HAL 115 is the optimal sensor for all applications
with alternating magnetic signals at the sensor position
The output turns low with the magnetic south pole on the such as:
branded side of the package and turns high with the
– rotating speed measurement,
magnetic north pole on the branded side. The output
state is not defined for all sensors if the magnetic field is – commutation of brushless DC-motors and cooling
removed again. Some sensors will change the output fans.
state and some sensors will not.
The hysteresis is the difference between the switching points BHYS = BON – BOFF
The magnetic limits given above refer to parts in the original packaging. Mechanical stress on the hall sensitive areas
on the chip surface may generate an additional magnetic offset, which can slightly change the magnetic switching
points. This behavior is a physical phenomenon and not a malfunction of the sensor. Mechanical stress on the hall plates
can be caused, for example, by overmoulding the plastic package or by wide range temperature changes like soldering
or operating the parts at extreme temperatures.
Please use a sensor of the HAL 5xx family if higher robustness against mechanical stress is required.
12 Micronas
HAL115
mT HAL 115
6
VDD = 12 V
BON, 4
BOFF
2
BON
BOFF
–2
–4
–6
–50 0 50 100 150 °C
TA
Micronas 13
HAL11x
5.1. Application Circuit Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
The HAL 11x sensors can operate without external com- than the temperature outside the package (ambient tem-
ponents. For applications with disturbances on the sup- perature TA).
ply line or radiated disturbances, a series resistor and a TJ = TA + ∆T
capacitor are recommended (see Fig. 5–1).
At static conditions, the following equation is valid:
The series resistor and the capacitor should be placed
as closely as possible to the sensor. ∆T = IDD * VDD * Rth
Please use the sensors of the HAL 5xx family if lower op-
eration voltage, lower current consumption or tighter
VDD
magnetic specifications required.
14 Micronas
HAL11x
Micronas 15
HAL11x
Micronas GmbH All information and data contained in this data sheet are without any
Hans-Bunte-Strasse 19 commitment, are not to be considered as an offer for conclusion of a
D-79108 Freiburg (Germany) contract, nor shall they be construed as to create any liability. Any new
P.O. Box 840 issue of this data sheet invalidates previous issues. Product availability
and delivery are exclusively subject to our respective order confirma-
D-79008 Freiburg (Germany)
tion form; the same applies to orders based on development samples
Tel. +49-761-517-0 delivered. By this publication, Micronas GmbH does not assume re-
Fax +49-761-517-2174 sponsibility for patent infringements or other rights of third parties
E-mail: [email protected] which may result from its use.
Internet: www.micronas.com Further, Micronas GmbH reserves the right to revise this publication
and to make changes to its content, at any time, without obligation to
Printed in Germany notify any person or entity of such revisions or changes.
by Systemdruck+Verlags-GmbH, Freiburg (12/1999) No part of this publication may be reproduced, photocopied, stored on
Order No. 6251-456-2DS a retrieval system, or transmitted without the express written consent
of Micronas GmbH.
16 Micronas
HAL 11x, HAL 5xx, HAL 62x
Changes:
– position tolerance of the sensitive area reduced
– tolerances of the outline dimensions reduced
– thickness of the leadframe changed to 0.15 mm (old 0.125 mm)
– SOT-89A will be discontinued in December 2000
sensitive area
4.55
∅ 0.2
0.15 1.7
0.3 2 y
4 ±0.2 2.55
min.
0.25 top view
1 2 3
0.4 0.4
1.15
0.4
1.5
3.0
branded side
0.06 ±0.04
SPGS0022-5-A3/2E
Note: A mechanical tolerance of ±0.05 mm applies to all dimensions where no tolerance is explicitly given.
Position tolerance of the sensitive area is defined in the package diagram.
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