HIGH VOLTAGE

PHOTOTRANSISTOR OPTOCOUPLERS

H11D1
DESCRIPTION
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. An infrared emitting H11D2
diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage H11D3
NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.
H11D4
4N38

FEATURES
• High Voltage
- H11D1, H11D2, BVCER = 300 V
- H11D3, H11D4, BVCER = 200 V
• High isolation voltage
- 5300 VAC RMS - 1 minute
- 7500 VAC PEAK - 1 minute
• Underwriters Laboratory (UL) recognized File# E90700

ANODE 1 6 BASE

APPLICATIONS CATHODE 2 5 COLLECTOR

• Power supply regulators

• Digital logic inputs N/C 3 4 EMITTER

• Microprocessor inputs
• Appliance sensor systems
• Industrial controls

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Value Units
TOTAL DEVICE
TSTG -55 to +150 °C
Storage Temperature
Operating Temperature TOPR -55 to +100 °C
Lead Solder Temperature TSOL 260 for 10 sec °C
Total Device Power Dissipation @ TA = 25°C 260 mW
PD
Derate above 25°C 3.5 mW/°C
EMITTER
IF 80 mA
*Forward DC Current
*Reverse Input Voltage VR 6.0 V
*Forward Current - Peak (1µs pulse, 300pps) IF(pk) 3.0 A
*LED Power Dissipation @ TA = 25°C 150 mW
PD
Derate above 25°C 1.41 mW/°C

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 HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS

H11D1, H11D2, H11D3, H11D4, 4N38

ABSOLUTE MAXIMUM RATINGS (Cont.)

Parameter Symbol Value Units
DETECTOR
300 mW
*Power Dissipation @ TA = 25°C PD
Derate linearly above 25°C 4.0 mW/°C
H11D1 - H11D2 300
*Collector to Emitter Voltage H11D3 - H11D4 VCER 200
4N38 80
H11D1 - H11D2 300
V
*Collector Base Voltage H11D3 - H11D4 VCBO 200
4N38 80
H11D1 - H11D2
*Emitter to Collector Voltage VECO 7
H11D3 - H11D4
Collector Current (Continuous) 100 mA

ELECTRICAL CHARACTERISTICS (TA = 25°C Unless otherwise specified.)

INDIVIDUAL COMPONENT CHARACTERISTICS

Characteristic Test Conditions Symbol Device Min Typ** Max Unit
EMITTER
(IF = 10 mA) VF ALL 1.15 1.5 V
*Forward Voltage
Forward Voltage Temp. !VF
ALL -1.8 mV/°C
Coefficient !TA
Reverse Breakdown Voltage (IR = 10 µA) BVR ALL 6 25 V
(VF = 0 V, f = 1 MHz) ALL 50 pF
Junction Capacitance CJ
(VF = 1 V, f = 1 MHz) ALL 65 pF
*Reverse Leakage Current (VR = 6 V) IR ALL 0.05 10 µA
DETECTOR (RBE = 1 M") H11D1/2 300
BVCER
*Breakdown Voltage (IC = 1.0 mA, IF = 0) H11D3/4 200
Collector to Emitter (No RBE) (IC = 1.0 mA) BVCEO 4N38 80
H11D1/2 300
V
*Collector to Base (IC = 100 µA, IF = 0) BVCBO H11D3/4 200
4N38 80
Emitter to Base BVEBO 4N38 7
(IE = 100 µA , IF = 0)
Emitter to Collector BVECO ALL 7 10
(VCE = 200 V, IF = 0, TA = 25°C) 100 nA
H11D1/2
*Leakage Current (VCE = 200 V, IF = 0, TA = 100°C) 250 µA
ICER
Collector to Emitter (VCE = 100 V, IF = 0, TA = 25°C) 100 nA
H11D3/4
(RBE = 1 M") (VCE = 100 V, IF = 0, TA = 100°C) 250 µA
(No RBE) (VCE = 60 V, IF = 0, TA = 25°C) ICEO 4N38 50 nA

Notes
* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at TA = 25°C

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 HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS

H11D1, H11D2, H11D3, H11D4, 4N38

TRANSFER CHARACTERISTICS
DC Characteristic Test Conditions Symbol Device Min Typ** Max Unit
EMITTER H11D1
(IF = 10 mA, VCE = 10 V) H11D2 2 (20)
Current Transfer Ratio
(RBE = 1 M") CTR H11D3 mA (%)
Collector to Emitter
H11D4 1 (10)
(IF = 10 mA, VCE = 10 V) 4N38 2 (20)
(IF = 10 mA, IC = 0.5 mA)
H11D1/2/3/4 0.1 0.40
*Saturation Voltage (RBE = 1 M") VCE (SAT) V
(IF = 20 mA, IC = 4 mA) 4N38 1.0

TRANSFER CHARACTERISTICS
Characteristic Test Conditions Symbol Device Min Typ** Max Unit
SWITCHING TIMES
(VCE =10 V, ICE = 2 mA) ton ALL 5
Non-Saturated Turn-on Time µs
Turn-off Time (RL = 100 ") toff ALL 5

ISOLATION CHARACTERISTICS
Characteristic Test Conditions Symbol Device Min Typ** Max Unit
5300 (VACRMS)
Isolation Voltage (II-O #$1 µA, 1 min.) VISO ALL
7500 (VACPEAK)
Isolation Resistance (VI-O = 500 VDC) RISO ALL 1011 "
Isolation Capacitance (f = 1 MHz) CISO ALL 0.5 pF

Notes
* Parameters meet or exceed JEDEC registered data (for 4N38 only)
** All typical values at TA = 25°C

Fig.1 LED Forward Voltage vs. Forward Current Fig.2 Normalized Output Characteristics
1.8
Normalized to:
NORMALIZED ICER - OUTPUT CURRENT

VCE = 10 V
1.7
IF = 10 mA
VF - FORWARD VOLTAGE (V)

10 RBE = 106 Ω
1.6 TA = 25˚C
IF = 50 mA
1.5
1 IF = 10 mA
1.4
TA = 55˚C

1.3 IF = 5 mA

TA = 25˚C 0.1
1.2

1.1
0.01
TA = 100˚C
1.0
1 10 100 0.1 1 10 100

IF - LED FORWARDCURRENT (mA) VCE - COLLECTOR VOLTAGE (V)

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 HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS

H11D1, H11D2, H11D3, H11D4, 4N38

Fig.3 Normalized Output Current vs. LED Input Current Fig.4 Normalized Output Current vs. Temperature
10
NORMALIZED ICER - OUTPUT CURRENT

NORMALIZED ICER - OUTPUT CURRENT

Normalized to:
Normalized to:
VCE = 10 V
VCE = 10 V
IF = 10 mA
IF = 10 mA
RBE = 106 Ω
RBE = 106 Ω IF = 20 mA TA = 25˚C
TA = 25˚C
1
IF = 10 mA
1

IF = 5 mA

0.1

0.01 0.1
1 10 -60 -40 -20 0 20 40 60 80 100

IF - LED INPUT CURRENT (mA) TA - AMBIENT TEMPERATURE (˚C)

Fig.5 Normalized Dark Current vs. Ambient Temperature Normalized Collector-Base Current vs. Temperature
NORMALIZED ICBO - COLLECTOR-BASE CURRENT

10
Normalized to: Normalized to:
NORMALIZED ICER - DARK CURRENT

VCE = 100 V 9 VCE = 10 V

10000
RBE = 106 Ω IF = 10 mA
TA = 25˚C 8 IF = 50 mA RBE = 106 Ω
TA = 25˚C
1000 7
VCE = 300 V
6
100
VCE = 100 V 5
VCE = 50 V
4
10
3

2 IF = 10 mA
1

1
IF = 5 mA
0.1 0
10 20 30 40 50 60 70 80 90 100 110 -60 -40 -20 0 20 40 60 80 100

TA - AMBIENT TEMPERATURE (˚C) TA - AMBIENT TEMPERATURE (˚C)

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 HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS

H11D1, H11D2, H11D3, H11D4, 4N38

Package Dimensions (Through Hole) Package Dimensions (Surface Mount)

0.350 (8.89)
3 2 1 0.330 (8.38)
PIN 1
ID.

3 2 1 PIN 1
ID.
0.270 (6.86)
0.240 (6.10)

0.270 (6.86)
0.240 (6.10)

4 5 6
SEATING PLANE

0.350 (8.89)
0.330 (8.38) 4 5 6

0.070 (1.78)
0.045 (1.14) 0.300 (7.62)
0.070 (1.78)
0.045 (1.14) TYP

0.200 (5.08)
0.135 (3.43)
0.200 (5.08) 0.016 (0.41)
0.165 (4.18) 0.008 (0.20)
0.154 (3.90) 0.020 (0.51)
0.100 (2.54) MIN
0.020 (0.51)
MIN 0.016 (0.40) MIN
0.016 (0.40) 0.022 (0.56)
0.008 (0.20) 0.016 (0.41) 0.100 (2.54) 0.315 (8.00)
0.022 (0.56) 0.300 (7.62) TYP MIN
0° to 15° TYP
0.016 (0.41)
0.405 (10.30)
0.100 (2.54) MAX
TYP
Lead Coplanarity : 0.004 (0.10) MAX

Package Dimensions (0.4”Lead Spacing) Recommended Pad Layout for

Surface Mount Leadform
3 2 1 PIN 1
ID.

0.270 (6.86)
0.240 (6.10) 0.070 (1.78)

4 5 6 0.060 (1.52)

0.350 (8.89)
0.330 (8.38)
0.415 (10.54) 0.100 (2.54)
0.070 (1.78)
0.045 (1.14) 0.295 (7.49)
SEATING PLANE

0.030 (0.76)
0.004 (0.10)
0.200 (5.08) MIN
0.135 (3.43)

0.154 (3.90) 0.016 (0.40)

0.100 (2.54) 0.008 (0.20)

0° to 15°
0.022 (0.56)
0.016 (0.41)
0.400 (10.16)
0.100 (2.54) TYP TYP

NOTE
All dimensions are in inches (millimeters)

8/9/00 200046A
 HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS

H11D1, H11D2, H11D3, H11D4, 4N38

ORDERING INFORMATION

Option Order Entry Identifier Description

S .S Surface Mount Lead Bend

SD .SD Surface Mount; Tape and reel
W .W 0.4” Lead Spacing
300 .300 VDE 0884
300W .300W VDE 0884, 0.4” Lead Spacing
3S .3S VDE 0884, Surface Mount
3SD .3SD VDE 0884, Surface Mount, Tape & Reel

QT Carrier Tape Specifications (“D” Taping Orientation)

12.0 ± 0.1
4.85 ± 0.20
4.0 ± 0.1 Ø1.55 ± 0.05
0.30 ± 0.05 4.0 ± 0.1
1.75 ± 0.10

7.5 ± 0.1

13.2 ± 0.2 16.0 ± 0.3

9.55 ± 0.20

0.1 MAX 10.30 ± 0.20 Ø1.6 ± 0.1

User Direction of Feed

NOTE
All dimensions are in millimeters

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 HIGH VOLTAGE
PHOTOTRANSISTOR OPTOCOUPLERS

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO
ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME
ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;
NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES
OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR
CORPORATION. As used herein:
1. Life support devices or systems are devices or systems 2. A critical component in any component of a life support
which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be
or (b) support or sustain life, and (c) whose failure to reasonably expected to cause the failure of the life support
perform when properly used in accordance with device or system, or to affect its safety or effectiveness.
instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury of the
user.

www.fairchildsemi.com © 2000 Fairchild Semiconductor Corporation

8/9/00 200046A