Analysis of Low Voltage Bulk-Driven High Swing Cascode Current Mirrors For Low Voltage Applications
Analysis of Low Voltage Bulk-Driven High Swing Cascode Current Mirrors For Low Voltage Applications
Analysis of Low Voltage Bulk-Driven High Swing Cascode Current Mirrors For Low Voltage Applications
I. INTRODUCTION
From the last few decades the market for portable electronic systems such as a wireless Communication devices, and consumer
electronics, etc. is continuously expanding day by day, So there is a improvement need for the development of low-voltage (LV)
and low-power (LP) circuit techniques and system building blocks. Not only low-voltage but also low-power operation are of
tremendous importance for advisable applications. The Low-voltage operation is demanded because it is desirable to use as less
batteries as possible for size and weight considerations, It is necessary to ensure a reasonable battery lifetime so we use low power
consumption technique. An important factor regarding analog circuits is that; the threshold voltages of future standard CMOS
technologies are not expected to decrease much below what is availableon nowadays. The MOS transistor is a four terminal device;
it is mostly used as a three terminal device because the bulk terminal is connected to the source terminal or to the drain terminal, to
Vdd or to Vss. So, a large number of possible MOS circuits are overlooked; hence a good solution to overcome the threshold
voltage is usage of the Bulk-driven technology. The principle of the Bulk-driven technology is that; the gate-source voltage is set to
sufficientvalue to create an inversion layer for the MOSFET.
By applying an input signal to the bulk terminal of the MOSFET. By this way, the threshold voltage can be either reduced or
removed from the signal path. The operation of the Bulk-driven MOS transistor is like a JFET i.e. a depletion type device, it can
work under zero, negative, or even slightly positive biased conditions.That means the threshold voltage requirements are removed
from signal path.
This paper proposes a low voltage self-biased high swing cascode current mirror (SHCCM) using bulk-driven technique having
wider operating current range and higher bandwidth, and bulkdriven wilsen current mirror and bulk-driven triple cascode current
mirror and comparison of all results with gate driven current mirror results proving the bulkdriven technology works under low
voltages and high range applications with high output impedence.
Fig. 3(a) Cascode current mirror Fig 3(b) self-biased cascode current mirror
Self biasedcascode current mirror is used to achieve better matching current carecteristics at input and output nodes of the
circuit.and it is also used to achive high output impedence. In this circuit the output resistence of the circuit is increased by a factor
ofgmr0where gmis the transconductence and r0is the output resistence of the circuit.
Fig 4(a) simple bulk-driven current mirror Fig 4(b) self-biased bulk-driven cascode current mirror
And Vds>Vgs-Vt
Where β=µncox , and w/l is the aspect ratio of the transistor and is the absolute fermi potensial , VTo is the zero bias threshold
voltage and ϒ is the body effect coefficient.The current across the mosfet can be determined by the equation (3) for variation in
potensialVbs and here the values of Vbs is less than the threshold voltages to ensure negligible bulk current in the circuit. The
current mirror operation in the proposed circuit is implemented by constent bulk source potensial M1 and M3 and same being
copied at M2 and M4 transisters.
In bulk-driven circuits, due to channel formation, MOSFETs behave like JFET and become operative as soon as the power supply
is switched ON. Due to the non-linear behavior of MOSFET at very low voltages themathematical equations become very difficult
and do not give an exact statistical analysis results of the circuit. These effects can be compensated by choosing the aspect ratios of
MOSFETs at the time of simulation using trial and error method. This mismatch of the aspect ratio of the transistor comared to
mathematical equation leads to Ioutshift compared to Iin . this can be over come by using the offset current in the output terminal it
is in few milli ohms. The proposed nmos current mirror is based on p-well technology.
Fig.5(b) wilson current mirror with nmos Fig 5 (c) bulk driven Wilson current mirror
Fig. 6(a) triple cascode current mirror Fig. 6(b) Bulk-driven triple cascode current mirror
Fig. 7.2 minimum input voltage required for the cascode current mirror
Fig. 7.3 Iin VS Iout of the self-biased bulkdriven cascode current mirror
Fig. 7.4 minimum input voltage required for the bulk-driven self-biased cascode current mirror
Fig. 7.5 Perametric analasis of proposed current mirror Iout VS different length of transister
Fig. 7.7 Iout VS Vgs for different values of Vds of the proposed bulk-driven cascode current mirror
Fig. 7.8 minimum input voltage required for bulk -driven wilsen current mirror
Fig 7.9 Iin VS Iout of the bulk-driven triple cascode current mirror
Fig 7.10 magnitude and phase response of the triple cascode current mirror
Fig. 7.11 maximum cut off frequency of the triple cascode current mirror
Fig 7.12 magnitude and phase response of the bulk-driken Wilson current mirror
VIII. CONCLUSION
The approach of bulk-driven self-biased high swing cascode current mirror and bulk-driven Wilson, bulk-driven triple cascode
current mirror has been presented and compared with that of the gate-driven current mirrors. With this technique, the supply
voltage can be reduced to make this technique compatible with the lower power supply requirement so the modern VLSI
technology. The input voltage required in the proposed bulk-driven SHCCM and bulk driven Wilson current mirror and bulk-
driven triple cascode current mirror is lower as compared to the conventional gate-driven current mirrors. The working of
proposed SHCCM and bulk-driven Wilson current mirror and bulk-driven triple cascode current mirror has been shown at
supply voltages as low as compared to conventional gate-driven SHCCM operates at less than 1Vfor the same technology.
Moreover, the bandwidth and output resistance of the circuit were found to be higher than that of the conventional circuit.
Self-biased Cascode
C.M
0.77 0.65 139 180 5 7 MHz
Bulk-driven self-
biased cascode C.M
0.3 0.38 135 180 5 10 MHz
Wilson C.M
Bulk-driven Wilson
C.M
0.47 0.85 203 180 4 7 GHz
Bulk-driven triple
cascade C.M
1 1.1 243 180 6 30 GHz
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