Unit I-: Part A
Unit I-: Part A
PART A
1. Define body bias effect. [Nov /Dec-2016]
2. Draw the stick diagram and layout for CMOS inverter[Nov /Dec-2016]
3. Define any two layout design rules [Nov /Dec-2015,reg8]
4. Determine the drain current of short channel NMOS transistor for the following
measurements VDS = 1.5 V, VGS = 2V, VBS = 0V,VTO = 0.43V.Assume VDSAT = 0.6VG,
Kn =110µA/V2 , λ = 0.1V-1, γ = 0.4 and W/L = 0.4/0.25[Nov /Dec-2015, reg8]
5. State channel-length modulation. Write down the equation for describing the channel
length modulation effect in NMOS transistors.[May/June-2016]
6. What is Latch-up? How to prevent latch up?.[May/June-2016]
7. Draw the DC transfer characteristics of CMOS inverter.[May/June-2015,reg8]
8. Define lambda based design rules for layout.[May/June-2015,reg8]
9. List the various issues in technology -CAD.[May/June-2013,reg8]
10. What is stick diagram? Give the various colour coding used in stick diagram.
[Nov /Dec-2010, reg8]
11. What is instances? What is instancing? [Nov /Dec-2010, reg8]
12. What is the need for design rule ? [Nov /Dec-2014, reg8]
13. What are the advantages of CMOS over NMOS technology
14. What are the advantages of CMOS technology ?
15. What is micron design rule?
16. Compare NMOS and PMOS ?
17. What is threshold voltage ?
18. What are different operating modes of MOS transistor ?
19. What are three operating regions of MOS transistor ?
20. Define Scaling?
21. What are the different generations of integrated circuits ?
22. What are the major advantages of IC ?
23. What is the objective of layout rules ?
24. What is accumulation mode?
25. What is depletion mode ?
PART B
1.(i)Describe the Equation for source to drain current in the three regions of operation
of MOS transistor and draw the VI characteristics.[May/June -2016]
[Nov/Dec-2014,reg8] (8)
(ii)Explain in detail about the body effect and its effect in MOS device
[May/June -2016] (8)
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EC6601 VLSI DESIGN
3.(i)Explain the different steps involved in n-well CMOS fabrication process with neat
Diagrams. [Nov/Dec-2014,reg8] ,[Nov /Dec-2016] (8)
(ii)Derive the noise margins for a CMOS inverter. [Nov /Dec-2016] (8)
4.(i)Discuss in detail with a neat layout, the design rules for a CMOS inverter.
[Nov /Dec-2016] (8)
(ii)Discuss the mathematical equations that be used to model the drain current and
diffusion capacitance of MOS transistors. [Nov /Dec-2016] (8)
5.Explain in detail about the ideal I-V characteristics and Non ideal I-V characteristics of a
NMOS and PMOS devices. [May/June -2013,reg8] (16)
6.(i)Explain in detail about the body effect and its effect in NMOS and PMOS device (8)
(ii)Derive the expression for DC transfer characteristics of CMOS inverter (8)
[May/June -2013,reg8]
8. Explain in detail with neat diagram the steps involved in the fabrications of nwell process.
[May/June -2015,reg8] (16)
10. Design the layout for NAND gate and discuss about layout design rules.
[Nov/Dec-2010,reg8] (16)
11.(i) Draw the stick diagram & layout diagram for 3-input NOR gate. (8)
(ii) Draw the stick diagram & layout diagram for 3-input NAND gate. (8)
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EC6601 VLSI DESIGN
4.List out the sources of static and dynamic power consumption. [Nov /Dec-2016]
5.Give the expression for Elmore delay and state the various parameters associated with it.
[Nov /Dec-2014, reg8]
6.Draw the small signal model of a MOSFET. [Nov /Dec-2015, reg8]
7.How can a CMOS inverter act as an amplifier? [Nov /Dec-2010, reg8]
8. State the types of power dissipation. [May/June-2015,reg8]
9. What is meant by design margin? [May/June-2013,reg8]
10. List the various power losses in CMOS circuits. [May/June-2013,reg8]
11. Implement a 2:1 Mux using pass transistor. [May/June-2014,reg8]
12. What is static power dissipation?
13. What are the methods to reduce dynamic power dissipation?
14. What are the methods to reduce static power dissipation?
15. Write the applications of transmission gate?
16. What is pass transistor?
17. why low power has become an important issue in the present day VLSI circuit realization
18. What are the various ways to reduce the delay time of a CMOS inverter?
19. What makes dynamic CMOS circuits faster than static CMOS circuits?
20. List various sources of leakage currents?
21. What is glitching power dissipation?
22. What is Dynamic power dissipation?
23. What is transmission gate?
PART B
1.Write short notes on
(i) Ratioed Circuits [Nov /Dec-2016] (8)
(ii)Dynamic CMOS Circuits. [Nov /Dec-2016] (8)
2.(i)Estimate least delay and determine input capacitance of each stages for the logic
network shown in figure, which may represent the critical path of a more complex
logic block. The output of the network is loaded with a capacitance which is 5 times
larger than the input capacitance of the first gate, which is a minimum-sized inverter. .
[Nov /Dec-2016] (8)
(ii)Explain the dynamic power dissipation in CMOS circuits with necessary diagrams and
Expressions. [Nov /Dec-2016] (8)
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EC6601 VLSI DESIGN
3. What are the sources of power dissipation in CMOS and discuss various designs
techniques to reduce power dissipation in CMOS? [May/June-2016] (16)
4.(i)Draw the static CMOS logic circuit for the following expression
(a)Y = (A.B.C.D)’ (b)Y = (D(A+BC))’ [May/June-2016] (8)
(ii) Discuss in detail the characteristics of CMOS transmission gate? [May/June-2016](8)
6. (i)Explain the power dissipation of static CMOS design in detail. [N /D-2014,reg8] (8)
(ii)Define logic Effort and reason –out why mostly NAND gates are used to realize the
Combinational circuits rather than NOR gates. [Nov /Dec-2014,reg8] (8)
7. Discuss in detail about the resistive and capacitive delay estimation of a CMOS inverter
circuit. [May/June -2013] (16)
8.(i) Construct a 4 input pseudo nMOS NAND and NOR gates (8)
(ii)Write the expression for minimum possible delay of multistage logic networks. (8)
PART B
1. Explain the operation of Master-slave based edge trigged register.[May/June-2016] (16)
5.(i) What are the Klass semi dynamic flip flops and differential Flip flops?
[Nov/Dec-2015,reg8] (8)
(ii)Discuss on Skew tolerant Domino circuits. [Nov/Dec-2015,reg8] (8)
6.(i)Compare Static and dynamic logic circuit with example. [Nov/Dec-2015,reg8] (8)
(ii) Explain briefly the concept of NORA CMOS pipelined structures. (8)
7.(i) Design a 2 input CVSL AND/NAND gate and a 3 input CVSL OR/NOR gate . (8)
(ii) Describe in detail about memory architectures and its building blocks. (8)
8.(i)Draw and explain the operation of conventional CMOS pulsed and resettable latches. (8)
ii) Write a brief note on sequencing dynamic circuits. (8)
3. Why is barrel shifter very useful in the designing of arithmetic circuits? [Nov/Dec-2016]
4. Write the principle of any one fast multiplier. [Nov/Dec-2016]
5. 5 .How path can be implemented in VLSI system?
PART B
1. Design a 16 bit carry bypass and carry select adder and discuss their features.
[May/June-2016]. (16)
2. Design a 4x4 array multiplier and write down the equation for delay.
[May/June-2016] (16)
3. Explain the operation of a basic 4 bit adder, Describe the different approaches of
improving the speed of the adder. [Nov/Dec-2016] (16)
4. Explain the operation of booth multiplication with suitable examples? Justify how booths
algorithm speed up the multiplication process. [Nov/Dec-2016] (16)
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EC6601 VLSI DESIGN
7. What are the types of high speed multiplier? Explain any two.
[Nov/Dec-2014,reg8] (16)
10. List the logic design considerations of binary adder and explain
(i) Carry skip adder (8)
(ii) Carry save adder (8)
11. (i) Give a note on linear carry select adder. (10)
(ii) Discuss the data paths in digital processor architectures. (6)
12. (i) Design the arithmetic logic unit (ALU) of 64 bit high end microprocessor and
Arithmetic operators involved in design (12)
(ii) Give a short note on Logarithmic shifter. (4)
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EC6601 VLSI DESIGN
PART B
1. With neat sketch explain the CLB,IOB and programmable interconnects of an FPGA
a. Device. [May/June-2016]
(16)
2. Write brief notes on:
3. Full custom ASIC [May/June-2016] (8)
4. Semi-custom ASIC[May/June-2016] (8
6. Briefly explain the semi-custom ASIC with its classification. [Nov/Dec-2016] (16)
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