Tea 6843
Tea 6843
Tea 6843
DATA SHEET
TEA6843HL
New In Car Entertainment (NICE)
extended car radio
Product specification 2003 Dec 19
Philips Semiconductors Product specification
2003 Dec 19 2
Philips Semiconductors Product specification
1 FEATURES
• FM mixer for conversion of FM RF from 65 to 108 MHz
to IF of 10.7 MHz; the mixer provides inherent image
rejection
• FM RF mixer can be set to receive weather band radio
up to 162.55 MHz • Level detector for AM and FM with temperature
• Buffer output for weather band flag compensated output voltage; starting point and slope of
• AM mixer 1 for conversion of AM RF to AM IF1 of level output is programmable via the I2C-bus
10.7 MHz • AM RF PIN diode drive circuit; AGC threshold detection
• LC tuner oscillator providing mixer frequencies for at AM mixer 1 and IF2 AGC input; threshold is
FM mixer and AM mixer 1 programmable via the I2C-bus; AM IF2 AGC and
demodulator
• AM mixer 2 for conversion of AM IF1 to AM IF2 of
450 kHz • AM AF output switchable to provide AM IF2 for
AM stereo decoder
• Crystal oscillator providing mixer frequencies for
AM mixer 2 and reference for synthesizer PLL, IF count, • AM noise blanker with blanking at AM IF2
timing for inaudible Radio Data System (RDS) update • Several test modes available for fast IC and system
and reference frequency for car audio signal tests.
processor ICs
• Fast synthesizer PLL tuning system with local control for 2 GENERAL DESCRIPTION
inaudible RDS updating
The TEA6843HL is a single IC with car radio tuner for AM,
• Timing function for RDS update algorithm and control
FM and Weather Band (WB) intended for microcontroller
signal output for car audio signal processor ICs
tuning with the I2C-bus. It provides the following functions:
(TEA688x, SAA77xx) or car radio integrated signal
processor IC (TEF689x) • AM double conversion receiver for LW, MW and SW
(31 m, 41 m and 49 m bands) with IF1 = 10.7 MHz and
• Digital auto alignment circuit for conversion of
IF2 = 450 kHz
LC oscillator tuning voltage to controlled alignment
voltage of FM antenna tank circuit • FM single conversion receiver with integrated image
rejection for IF = 10.7 MHz capable of selecting US FM,
• AGC PIN diode drive circuit for FM RF AGC; AGC
US weather, Europe FM, East Europe FM and Japan
detection at FM mixer input; the AGC PIN diode current
FM bands
can be set to a fixed value to allow local function for
search tuning; AGC threshold is a programmable and • The tuning system includes FM mixer, AM mixer 1,
keyed function switchable via the I2C-bus AM mixer 2, crystal oscillator, VCO and PLL synthesizer
on one chip.
• FM IF linear amplifiers with high dynamic input range
• FM quadrature demodulator with automatic centre
frequency adjustment and Total Harmonic Distortion
(THD) compensation and level driven soft mute;
soft mute characteristic is adjustable via the I2C-bus
3 ORDERING INFORMATION
TYPE PACKAGE
NUMBER NAME DESCRIPTION VERSION
TEA6843HL LQFP80 plastic low profile quad flat package; 80 leads; SOT315-1
body 12 × 12 × 1.4 mm
2003 Dec 19 3
Philips Semiconductors Product specification
2003 Dec 19 4
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2003 Dec 19
Philips Semiconductors
extended car radio
New In Car Entertainment (NICE)
BLOCK DIAGRAM
DGND OSCFDB VDDA4 AFHOLD AMAFIF2
Vtune VDDA3 FREF VDDD VDDA5 VDDA6
DAAIN CPOUT VCOGND OSCTNK AFSAMPLE TRDSMUTE RDSMPX FMMPX
40 42 43 44 45 46 47 48 49 50 51 53 54 55 56 57 58 59 61
39 SEQUENTIAL
DAATD AM POWER
ANTENNA VCO CIRCUIT FOR DETECTOR MUTE
SUPPLY
38 DAA RDS UPDATING
DAAOUT
TUNING SYSTEM
AM
10.25 MHz
FM IF 63
I2C-bus SDA
IF
AM IF2 I2C-BUS 64
COUNT
37 SCL
T1FMAGC
36 FM
T2FMAGC
AGC
35
IFMAGC WX 66
IF2GND
34 TEA6843HL
WBSW
FMMIXIN2
33
31
× N1 AM
IF AGC
LEVEL
DAA
SOFT
MUTE
RFGND FM ÷2
30 I/Q MIXER 90°
FMMIXIN1
5
WB 67
FLAG QDET1
DEMODULATOR
68
29 QDET2
Vref(FMMIX) 90°
AM-NOISE
DETECTOR
PEAK/
AVERAGE
BLANK
PULSE
AM
LEVEL Σ 69
CAFC
70
Vlevel
71
XTAL1
×
28 FM 72
IAMAGC CRYSTAL
27 N2 LIMITER/ XTALGND
AM OSCILLATOR 73
T2AMAGC AM LEVEL
26 RF AGC ÷ 5/10 MIXER 2
XTAL2
T1AMAGC
75
TMUTE
×
76
23 IREF
AMMIX1IN1
AM IFAMP 1 IFAMP 2
22 77
AMMIX1IN2 MIXER 1 AMMIX2OUT1
78
AMMIX2OUT2
13, 15, 21, 24, 25, 32,
20 19 18 17 16 14 12 11 10 9 8 7 6 5 4 3 2 1 79 41, 52, 60, 62, 65, 74, 80
TEA6843HL
Product specification
MHC477
MIX1OUT2 IFAMP1DEC IFAMP1IN IFAMP1OUT Coffset IF1GND FMLIMIN CAGC n.c.
handbook, full pagewidth
IMUTEREF AMNBHOLD
IFAMP2OUT
6 PINNING
2003 Dec 19 6
Philips Semiconductors Product specification
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Philips Semiconductors Product specification
78 AMMIX2OUT2
77 AMMIX2OUT1
72 XTALGND
66 IF2GND
75 TMUTE
68 QDET2
67 QDET1
61 VDDA6
73 XTAL2
71 XTAL1
79 CAGC
70 Vlevel
69 CAFC
76 IREF
63 SDA
64 SCL
80 n.c.
74 n.c.
65 n.c.
62 n.c.
handbook, full pagewidth
FMLIMDEC 1 60 n.c.
FMLIMIN 2 59 VDDA5
AMIF2DEC 3 58 FMMPX
IFAMP2OUT 4 57 RDSMPX
AMNBHOLD 5 56 AMAFIF2
AMIF2IN 6 55 TRDSMUTE
IF1GND 7 54 AFHOLD
IFAMP2IN 8 53 AFSAMPLE
Coffset 9 52 n.c.
IMUTEREF 10 51 VDDA4
TEA6843HL
IFAMP2DEC 11 50 OSCTNK
IFAMP1OUT 12 49 OSCFDB
n.c. 13 48 VCOGND
IFAMP1IN 14 47 DGND
n.c. 15 46 VDDD
VDDA1 16 45 FREF
IFAMP1DEC 17 44 VDDA3
MIX1OUT1 18 43 CPOUT
MIX1OUT2 19 42 Vtune
VDDA2 20 41 n.c.
n.c. 21
AMMIX1IN2 22
AMMIX1IN1 23
n.c. 24
n.c. 25
T1AMAGC 26
T2AMAGC 27
IAMAGC 28
Vref(FMMIX) 29
FMMIXIN1 30
RFGND 31
n.c. 32
FMMIXIN2 33
WBSW 34
IFMAGC 35
T2FMAGC 36
T1FMAGC 37
DAAOUT 38
DAATD 39
DAAIN 40
MHC478
2003 Dec 19 8
Philips Semiconductors Product specification
7 FUNCTIONAL DESCRIPTION If the keyed AGC function is activated, the AGC function is
keyed by the narrow band level (IF).
7.1 Oscillators
The AGC PIN diode drive can be set via the I2C-bus to
7.1.1 VCO
local function for search tuning.
The L and C tuned VCO provides the local oscillator signal
for both FM and AM mixer 1. It has a frequency range of 7.2.4 FM IF AMPLIFIERS
151.2 to 248.2 MHz.
The two FM IF amplifiers provide 10 dB and 8.5 dB
amplification with high linearity and dynamic range.
7.1.2 CRYSTAL OSCILLATOR
The crystal oscillator provides a 20.5 MHz signal that is 7.2.5 FM DEMODULATOR
used for:
The FM quadrature demodulator includes automatic
• Reference frequency for frequency synthesizer PLL centre frequency adjustment and THD compensation.
• Local oscillator for AM mixer 2
7.2.6 FM MPX SOFT MUTE
• Reference frequency for the IF counter
• Timing signal for the RDS update algorithm Muting depth and start of muting are adjustable via the
I2C-bus.
• Reference frequency (75.368 kHz) for the TEA688x (car
audio signal processor - CASP) or TEF689x (car radio
7.3 AM signal channel
integrated signal processor - CRISP).
7.3.1 AM TUNER
7.1.3 PLL
The AM tuner is realized in a double conversion technique
Fast synthesizer PLL tuning system with local control for and is capable of selecting LW, MW and SW bands.
inaudible RDS updating.
AM mixer 1 converts AM RF to IF1 of 10.7 MHz, while
AM mixer 2 converts IF1 of 10.7 MHz to IF2 of 450 kHz:
7.2 FM signal channel
• LW = 144 to 288 kHz
7.2.1 DAA
• MW = 522 to 1710 kHz (European and US AM band)
FM RF Digital Auto Alignment (DAA) circuitry for the • SW = 5.85 to 9.99 MHz (including the 31 m, 41 m and
conversion of the VCO tuning voltage to a controlled 49 m bands).
alignment voltage for the FM antenna tank circuit.
7.3.2 AM RF AGC AND IF2 AGC
7.2.2 FM I/Q MIXER
The AM RF includes a PIN diode drive circuit. The
FM quadrature mixer converts FM RF (65 to 162.55 MHz)
threshold detection points for AM AGC are performed at
to IF of 10.7 MHz. The FM mixer provides inherent image
AM mixer 1 and AM IF2. AGC thresholds are
rejection and high RF sensitivity.
programmable at AM mixer 1 input via the I2C-bus.
It is capable of tuning the US FM, US weather,
Europe FM, Japan FM and East Europe FM bands: 7.3.3 AM AF OR IF2 SWITCH
• US FM = 87.9 to 107.9 MHz The AM output provides either a demodulated AM Audio
• US weather FM = 162.4 to 162.55 MHz Frequency (AF) or the corresponding AM IF2 signal. The
IF2 signal can be used for AM stereo decoder processing.
• Europe FM = 87.5 to 108 MHz
• Japan FM = 76 to 91 MHz 7.3.4 AM SOFT MUTE
• East Europe FM = 65.8 to 74 MHz.
The AM detector output is either not muted or signal
strength dependent soft muted audio. The soft mute
7.2.3 FM KEYED AGC function can be switched off via the I2C-bus.
The AGC threshold is programmable and the keyed AGC
function is switchable via the I2C-bus.
2003 Dec 19 9
Philips Semiconductors Product specification
7.3.5 AM NOISE BLANKER 7.5 Buffer output for weather band flag
The detection point for the AM noise blanker is the output In weather band mode the output is HIGH.
stage of AM mixer 1, while blanking is realized at the
output of the mixer 2. 7.6 Test mode
Trigger sensitivity can be modified by changing the resistor The test mode of the IC is activated by connecting
value at pin AMNBHOLD. pin FREF through a 100 kΩ resistor to VDDA1.
The test mode is intended for IC test during IC and radio
7.4 FM and AM level detector
manufacturing.
FM and AM level detectors provide the temperature
In test mode the settling time of the AM IF2 AGC is
compensated output voltage. The starting points and
reduced to less than 100 ms in the nominal application.
slopes of the level detector outputs are programmable via
the I2C-bus.
8 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDDA1 analog supply voltage 1 for IF amplifier 1 and 2 −0.3 +10 V
VDDA2 analog supply voltage 2 for FM mixer and AM mixer 1 −0.3 +10 V
VDDA3 analog supply voltage 3 for tuning PLL −0.3 +10 V
VDDA4 analog supply voltage 4 for VCO −0.3 +10 V
VDDA5 analog supply voltage 5 for on-chip power supply −0.3 +6.5 V
VDDA6 analog supply voltage 6 for on-chip power supply −0.3 +10 V
VDDD digital supply voltage −0.3 +6.5 V
∆VDD8.5-DD5 difference between any 8.5 V supply voltage and any note 1 −0.3 − V
5 V supply voltage
Tstg storage temperature −55 +150 °C
Tamb ambient temperature −40 +85 °C
Ves electrostatic handling voltage note 2 −200 +200 V
note 3 −2000 +2000 V
Notes
1. To avoid damages and wrong operation it is necessary to keep all 8.5 V supply voltages at a higher level than any
5 V supply voltage. This is also necessary during power-on and power-down sequences. Precautions have to be
provided in such a way that interferences can not pull down the 8.5 V supply below the 5 V supply.
2. Machine model (R = 0 Ω, C = 200 pF).
3. Human body model (R = 1.5 kΩ, C = 100 pF).
9 THERMAL CHARACTERISTICS
2003 Dec 19 10
Philips Semiconductors Product specification
10 DC CHARACTERISTICS
VMIX1OUT = VAMMIX2OUT = VDDA(n) = 8.5 V; VDDA5 = 5 V; VDDD = 5 V; Tamb = 25 °C; unless otherwise specified.
2003 Dec 19 11
Philips Semiconductors Product specification
11 AC CHARACTERISTICS
VMIX1OUT = VAMMIX2OUT = VDDA(n) = 8.5 V; VDDA5 = 5 V; VDDD = 5 V; Tamb = 25 °C; see Figs 14 and 15; unless otherwise
specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
Voltage controlled oscillator
fosc oscillator frequency 151.2 − 248.2 MHz
C/N carrier-to-noise ratio fosc = 200 MHz; ∆f = 10 kHz; − 101 − dBc
B = 1 Hz
RR ∆f osc fripple = 100 Hz;
ripple rejection ------------ VDDA4(ripple) = 100 mV (RMS)
f osc
fosc = 250 MHz 90 97 − dB
fosc = 200 MHz 92 99 − dB
Crystal oscillator: pins XTAL1, XTALGND and XTAL2
fosc oscillator frequency − 20.5 − MHz
Ri real part of input VXTAL1 − VXTAL2 = 1 mV −500 − − Ω
impedance
Ci input capacitance 8 10 12 pF
Vo(osc)(rms) oscillator output 240 350 500 mV
voltage (RMS value)
C/N carrier-to-noise ratio fosc = 20.5 MHz (10.25 MHz); − 112 − dBc
∆f = 10 kHz ------------
Hz
Oscillator divider N1
N1 oscillator divider ratio FM mode
standard, East Europe and − 2 −
local
weather band (WX) − 1 −
Oscillator divider N2
N2 oscillator divider ratio AM mode
LW and MW − 10 −
SW − 5 −
Synthesizer
PROGRAMMABLE DIVIDER
Nprog programmable divider 512 − 32767
ratio
2003 Dec 19 12
Philips Semiconductors Product specification
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Philips Semiconductors Product specification
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Philips Semiconductors Product specification
2003 Dec 19 15
Philips Semiconductors Product specification
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Philips Semiconductors Product specification
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Philips Semiconductors Product specification
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Philips Semiconductors Product specification
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Philips Semiconductors Product specification
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Philips Semiconductors Product specification
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Philips Semiconductors Product specification
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Philips Semiconductors Product specification
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Philips Semiconductors Product specification
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Philips Semiconductors Product specification
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Philips Semiconductors Product specification
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Philips Semiconductors Product specification
1. DAA conversion gain formula: V DAAOUT = 2 × 0.75 × ---------- + 0.25 × ( V DAAIN + V DAATD ) – V DAATD ; where
n
128
n = 0 to 127.
2. Pin FREF: Rext = 68 kΩ connected to ground activates the 2nd I2C-bus address.
3. The AM AGC transconductance buffer delivers a sink current which is proportional to the voltage at pin T1AMAGC.
2003 Dec 19 27
Philips Semiconductors Product specification
MHC360
10 8
handbook, full pagewidth
VAMAFIF2 Vlevel
(dB) (1) (V)
0 7
(2) THD
(%)
−10 6
−20 5
−30 4
(3)
−40 3
(4)
−50 2
(5)
−60 1
(6)
−70 0
10−3 10−2 10−1 1 10 102 103
VAMIF2IN (mV)
(1) Output voltage at AM audio output: m = 0.3; fmod = 1 kHz; soft mute off.
(2) Output voltage at AM audio output: m = 0.3; fmod = 1 kHz; soft mute on.
(3) Noise voltage at AM audio output: unweighted B = 2.5 kHz; soft mute off.
(4) Noise voltage at AM audio output: unweighted B = 2.5 kHz; soft mute on.
(5) Level detector output voltage for standard setting of level DAA.
(6) THD of AM audio output voltage: m = 0.8; fmod = 1 kHz.
2003 Dec 19 28
Philips Semiconductors Product specification
MHC361
6
handbook, full pagewidth
Vlevel
(V)
5
4
(1)
(2)
2 (3)
0
10−3 10−2 10−1 1 10 102 103
VAMIF2IN (mV)
50 Ω 4.7 nF oscilloscope,
counter
8.5 V
VIFAMP1IN = 4 V.
Test signal: Trep = 2 ms, tr < 50 ns, tf < 50 ns and duty factor 50%. VXTAL2 = 3 V.
2003 Dec 19 29
Philips Semiconductors Product specification
MHC363
6
handbook, full pagewidth
Vlevel
(V)
5
(1)
3
(2)
(3)
0
10−3 10−2 10−1 1 10 102 103
VIFAMP2IN-IMUTEREF
(mV)
2003 Dec 19 30
Philips Semiconductors Product specification
MHC364
10 9
handbook,
V full
; pagewidth
FMMPX Vlevel
VRDSMPX
(dB) 0
(1) 8 (V)
THD
(%)
−10 (2) 7
−20 6
−30 (3) 5
−40 (4) 4
−50 3
−60 2
(5)
−70 1
(6)
−80 0
10−3 10−2 10−1 1 10 102 103
VFMLIMIN (mV)
(1) Output voltage for not muted RDSMPX: ∆f = 22.5 kHz; fmod = 1 kHz.
(2) Output voltage for muted FMMPX: ∆f = 22.5 kHz; fmod = 1 kHz.
(3) Noise voltage at not muted RDSMPX: unweighted B = 250 Hz to 15 kHz with de-emphasis 75 µs.
(4) Noise voltage at muted FMMPX: unweighted B = 250 Hz to 15 kHz with de-emphasis 75 µs.
(5) Level voltage for standard setting of level DAA; data byte 6 = 84H.
(6) THD of FMMPX and RDSMPX: ∆f = 22.5 kHz; fmod = 1 kHz.
Fig.7 (S+N)/N, THD and level voltage for FM mode as a function of FM demodulator input voltage.
2003 Dec 19 31
Philips Semiconductors Product specification
MHC366
0
handbook, halfpage (1)
(2)
VFMMPX (3)
(dB)
(4)
(5)
(6)
−10 (7)
−20
Mute start:
(1) MD[2:0] = 000.
(2) MD[2:0] = 001.
(3) MD[2:0] = 010.
−30
(4) MD[2:0] = 011. 0 0.4 0.8 1.2 1.6
(5) MD[2:0] = 100. VTMUTE (V)
(6) MD[2:0] = 101.
(7) MD[2:0] = 110.
Mute start adjustment range, mute slope = 100 and VFMLIMIN = 10 mV.
MHC365
0
handbook, halfpage
(1)
(2)
VFMMPX (3)
(dB)
(4)
−20
(5)
(6)
(7)
−40
Mute slope:
(1) MS[2:0] = 000.
(2) MS[2:0] = 001. (8)
(3) MS[2:0] = 010.
(4) MS[2:0] = 011. −60
(5) MS[2:0] = 100. 0 0.3 0.6 0.9 1.2
(6) MS[2:0] = 101. VTMUTE (V)
(7) MS[2:0] = 110.
(8) MS[2:0] = 111.
Mute slope adjustment range, mute start = 100 and VFMLIMIN = 10 mV.
2003 Dec 19 32
Philips Semiconductors Product specification
t3
t1 t2
HOLD
FMMPX
SAMPLE
0 1 2 3 4 5 6 7 8
t (ms)
MHC368
Hold signal is used to hold the quality information for signal processing of the main channel during the alternative frequency jumps.
Quality measurement can be carried out during sample = 1.
t1 is the internal clock related logic delay of 100 µs.
t2 should be >1.1 ms to ensure correct loading of PLL for the main channel.
t3 should be >0 to ensure inaudible update; t3 < 0 extends the mute period.
t1 t2 t1
FMMPX
SAMPLE
continuous mode quality test
1
HOLD
0
0 1 n n+1 t (ms)
MHC369
2003 Dec 19 33
Philips Semiconductors Product specification
12.1.1 DATA TRANSFER For new frequency setting, in both AM and FM mode, the
programmable divider is enabled by setting bit MUTE = 1.
Data sequence: address, byte 1, byte 2, byte 3, byte 4, To select an FM frequency, two I2C-bus transmissions are
byte 5, byte 6 and byte 7. The data transfer has to be in necessary:
this order. The LSB = 0 indicates a WRITE operation to the
TEA6843HL. • First: bit MUTE = 1
• Second: bit MUTE = 0.
Bit 7 of each byte is considered the MSB and has to be
transferred as the first bit of the byte.
12.1.4 DEFAULT SETTINGS
The data becomes valid at the output of the internal
No default settings at power-on reset. One I2C-bus
latches with the acknowledge of each byte. A STOP
transmission is required to program the IC.
condition after any byte can shorten transmission times.
Notes
1. S = START condition.
2. A = acknowledge.
3. P = STOP condition.
2003 Dec 19 34
Philips Semiconductors Product specification
Notes
1. S = START condition.
2. A = acknowledge.
Notes
1. Defined by address pin FREF:
a) 1 = 1st IC address
b) 0 = 2nd IC address.
2. Read or write mode:
a) 0 = write operation to TEA6843HL
b) 1 = read operation from TEA6843HL.
2003 Dec 19 35
Philips Semiconductors Product specification
2003 Dec 19 36
Philips Semiconductors Product specification
Table 13 FM mode
BND1 BND0 SELECTION
0 0 FM standard: dead zone high current charge pump active,
FM AGC defined by RF level and threshold level setting
by I2C-bus
0 1 FM local: dead zone high current charge pump active,
FM AGC source current set to maximum
1 0 FM East Europe: dead zone high current charge pump
switched off, current of low current charge pump set to
1 mA
1 1 FM weather band: N1 divider set to 1 and I and Q phase
shift network switched on, WX flag signal activated
Note
1. In AM mode dead zone high current charge pump switched off, current of low current charge pump set to 1 mA.
2003 Dec 19 37
Philips Semiconductors Product specification
2003 Dec 19 38
Philips Semiconductors Product specification
2003 Dec 19 39
Philips Semiconductors Product specification
antenna
A
Vtune
B
10 kΩ fref 5V
PLL digital
2.2 kΩ 3.3 nF
22 Ω
3.9 nF 3.3 DGND
1.2 kΩ
µH
100 nF 22 nF
470
kΩ
100 nF
40 42 43 44 45 46 47
39 ANTENNA
Vt 22 kΩ DAA
38
C
TUNING SYSTEM
BB814 BAS16
AM D
(1) 10.25 MHz
120 nH E
1 µF
L5 37
8.2 pF
36 FM
1 nF AGC
L8 1 µF 35 F
470 nH WX
L9 34
47 pF BA779-2 WBSW TEA6843HL
33
×
4:6
6.8 µH 32 N1
560 pF n.c.
L6 31 FM ÷2 G
8.2 pF
BA779-2
30 I/Q MIXER 90°
3.3 µH 22 Ω
WB H
RFGND
FLAG
L7 100 47 µF 29 AM-NOISE PEAK/
5V 220 nH nF 90° I
DETECTOR AVERAGE
analog 22 nF
J
270
Ω BAQ806 K
28
L
27 AM N2
270
Ω
100 nF 26 RF AGC ÷ 5/10 M
22 µF
220 nF N
23 × IFAMP 1
22 AM
220 680 MIXER 1 O
nF 100 µH 180 pF
µH
1 mH
100 P
1 100
pF 330 pF 4.7 µF
nF nF 20 19 18 17 16 14
220 µH
1.5 kΩ 22 22
22
nF nF nF
1.2 MΩ
470 pF 1 nF
BF861C
47 Ω 22 Ω 22 Ω 10 Ω
Q
mhc479
2003 Dec 19 40
Philips Semiconductors Product specification
A 8.5 V
4.7 kΩ C1
B AF AF AM RDS/ FM
22 5V
Ω SAMPLE HOLD AUDIO/IF MPX MPX analog
2.7 1.8 47 µF
pF 6.8 nF 100 nF
pF 100 nF
47 µF
48 49 50 51 53 54 55 56 57 58 59 61
SEQUENTIAL POWER
AM
VCO CIRCUIT FOR MUTE
DETECTOR SUPPLY
C RDS UPDATING
VDD (I2C-bus)
D
10 10
E kΩ kΩ
FM IF 63
SDA
I2C- IF
AM IF2 COUNT I2C-BUS
bus 64 SCL
F
66
IF2GND
TEA6843HL
AM LEVEL SOFT
G IF AGC DAA MUTE
H 67
4.7 L3
DEMODULATOR
BLANK AM kΩ
I
PULSE LEVEL
Σ 68
69 AFC
J 70 47 µF AM/FM
K 71 LEVEL
FM
L × LIMITER/
CRYSTAL 72 20.5
MHz
AM OSCILLATOR 73
LEVEL
M MIXER 2
220 nF
N 75
76
IFAMP 2 120 220
kΩ nF
O 77
78
P
L2
11 10 9 8 7 6 5 4 3 2 1 80 79
330 Ω
22 nF
22 220 IF1GND 100 100 100 22 µF
nF nF nF nF nF
SFE10.7 SFE10.7
MS3 MS3
SFR450F 22 Ω
Q 8.5 V
mhc480
2003 Dec 19 41
Philips Semiconductors Product specification
antenna
FM RF input fref PLL
input
A
100 B
nF
C
Vtune D
10 kΩ relay 1 100
kΩ
3.3
470 47 Ω 100 nF 2.2 kΩ
nF
kΩ
3.9 22 Ω
1.2 kΩ 3.3
nF µH
68 DGND
100 nF 22 kΩ
relay 1 nF
teledyne relay 2 100 nF
n.c.
40 41 42 43 44 45 46 47
WBSW
39
ANTENNA
Vt 22 kΩ 38 DAA
E
BB814 BAS16 TUNING SYSTEM
F
120 AM
nH 10.25 MHz G
(1) 1.5 to
8.2
5 pF 1 µF
37
1 pF
nF 36 FM
H
L8 1 µF 35 AGC
470 nH WX
L9 34 TEA6843HL
6.8 33
×
µH 47 pF BA779-2
32 N1
n.c.
560 pF 31 FM ÷2 I
8.2 30 I/Q MIXER 90°
pF 3.3 µH 22 Ω L6
BA779-2 J
WB
RFGND
L7 FLAG
220 nH 29 AM-NOISE PEAK/
100 nF 47 µF 90° K
DETECTOR AVERAGE
22 nF
L
270 BAQ806
Ω BAQ800 M
28
27 AM N2 N
270
Ω
100 nF 26 RF AGC ÷ 5/10
22 O
µF
220 nF
P
23
× IFAMP 1
220 AM
nF 100 680 180 MIXER 1 Q
µH µH pF 50 Ω 22
1 mH
100
pF 330 1 4.7 100 R
220 µH pF nF µF nF
20 19 18 17 16 15 14
1.5 kΩ n.c.
22 22
nF nF 22 nF
1.2 MΩ
470 pF 1 nF 22 L1
BF861C
nF
470
BAV99 kΩ 22
nF
47 Ω 22 Ω 22 Ω 10 Ω SFE10.7
MS3
S
100 nF 100 nF
100 nF
304 Ω
330 Ω 52 Ω 2Ω
2003 Dec 19 42
Philips Semiconductors Product specification
10 Ω 5V
AF AF AM RDS/ FM
SAMPLE HOLD AUDIO/IF MPX MPX analog
47 µF 100 nF
A
10 Ω 5V
B
digital
C 47 µF 100 nF
4.7 kΩ C1 68 68
D kΩ kΩ 100 100 100
22 Ω nF nF nF 10 Ω
8.5 V
BB156 L4 47 µF 100 nF
22 nF 3.3 µH 3.3 µH
0Ω 47 µF
10 10
kΩ kΩ
2.7 1.8 100 nF 100 nF
pF pF 6.8 nF
47 µF
48 49 50 51 53 54 55 56 57 58 59 61
SDA
SCL
SEQUENTIAL POWER
AM
VCO CIRCUIT FOR MUTE
DETECTOR SUPPLY
E RDS UPDATING
G
I2C-bus
FM IF 63 SDA interface
I2C- IF
AM IF2 COUNT I2C-BUS 64 SCL
bus
TEA6843HL
SOFT DGND
AM LEVEL
IF AGC DAA MUTE
I
66 IF2GND
67
J
DEMODULATOR 4.7
kΩ L3
AM
K
BLANK
LEVEL
Σ 68
PULSE
69
AFC
L 47 µF
M 70 AM/FM
71 LEVEL
FM
N × LIMITER/ CRYSTAL 72 20.5
AM LEVEL OSCILLATOR 73 MHz
O MIXER 2
P
220 nF
75
76
IFAMP 2
Q
120 kΩ 220
77 nF
R 78
11 10 9 8 7 6 5 4 3 2 1 80 79 L2
330 Ω
22 Ω
22 220 100 100
nF nF nF nF 100
IF1GND 22 µF 22 nF
nF
coaxial connector
test pin
jumper
SFE10.7
MS3
SFR
450F
SFE10.7 × to TEA688XH
MS3
S
100 nF 100 nF 100 nF 100 nF 100 nF
330 Ω 52 Ω 2Ω 47 Ω 330 Ω 2Ω 52 Ω
2 kΩ
2003 Dec 19 43
Philips Semiconductors Product specification
2003 Dec 19 44
Philips Semiconductors Product specification
2003 Dec 19 45
Philips Semiconductors Product specification
2003 Dec 19 46
Philips Semiconductors Product specification
14 INTERNAL CIRCUITRY
Table 29 Equivalent pin circuits
PIN SYMBOL EQUIVALENT CIRCUIT
1 FMLIMDEC 5 kΩ
2 FMLIMIN
1
12 kΩ
2
MHC374
3 AMIF2DEC 500 Ω
6 AMIF2IN
3
2 kΩ
6
MHC375
4 IFAMP2OUT
330 Ω
4
MHC376
5 AMNBHOLD
80 kΩ
MHC377
7 IF1GND
2003 Dec 19 47
Philips Semiconductors Product specification
11
330 Ω
8
MHC378
9 Coffset 1 MΩ
MHC379
10 IMUTEREF
10 59
MHC380
12 IFAMP1OUT
330 Ω
12
MHC381
13 n.c.
14 IFAMP1IN
17 IFAMP1DEC 5 5
kΩ kΩ
330 Ω
14 17 MHC483
15 n.c.
2003 Dec 19 48
Philips Semiconductors Product specification
MHC383
20 VDDA2
21 n.c.
22 AMMIX1IN2 400 Ω
23 AMMIX1IN1
23
22
MHC385
24 n.c.
25 n.c.
26 T1AMAGC
26
20 kΩ
MHC386
27 T2AMAGC
200 Ω
27
MHC387
2003 Dec 19 49
Philips Semiconductors Product specification
MHC388
29 Vref(FMMIX)
29
MHC389
30 FMMIXIN1
33 FMMIXIN2 10 10
kΩ kΩ
30 33 MHC390
31 RFGND
32 n.c.
34 WBSW
200 Ω
34
50 kΩ
MHC391
35 IFMAGC
35
MHC392
2003 Dec 19 50
Philips Semiconductors Product specification
10 kΩ 10 kΩ
36
MHC393
37 T1FMAGC
5 kΩ
37
MHC394
38 DAAOUT
36
kΩ
38
MHC395
39 DAATD
39 MHC396
2003 Dec 19 51
Philips Semiconductors Product specification
39
2.5 kΩ
40
MHC397
41 n.c.
42 Vtune
42
MHC398
43 CPOUT
40
39
43
MHC399
44 VDDA3
45 FREF
1 kΩ
45
MHC400
46 VDDD
47 DGND
2003 Dec 19 52
Philips Semiconductors Product specification
50
49
MHC401
51 VDDA4
52 n.c.
53 AFSAMPLE 53
MHC402
54 AFHOLD
54
MHC403
55 TRDSMUTE
55
MHC404
2003 Dec 19 53
Philips Semiconductors Product specification
201 kΩ
56
MHC405
57 RDSMPX
3 kΩ
57
MHC406
58 FMMPX
3 kΩ
58
MHC407
59 VDDA5
60 n.c.
61 VDDA6
62 n.c.
63 SDA
1 kΩ
63
MHC410
2003 Dec 19 54
Philips Semiconductors Product specification
MHC411
65 n.c.
66 IF2GND
67 QDET1
68 QDET2
69 CAFC
67
69
68
MHC413
70 Vlevel
150 Ω
70
MHC414
71 XTAL1
27.6 pF 27.6 pF
72 XTALGND
73 XTAL2
20 kΩ 20 kΩ
71 73
10 kΩ 10 kΩ
72
MHC415
74 n.c.
2003 Dec 19 55
Philips Semiconductors Product specification
75
MHC417
76 IREF
10 kΩ
76 MHC418
77 AMMIX2OUT1
77 78
78 AMMIX2OUT2
MHC419
79 CAGC
79
MHC420
80 n.c.
2003 Dec 19 56
Philips Semiconductors Product specification
15 PACKAGE OUTLINE
LQFP80: plastic low profile quad flat package; 80 leads; body 12 x 12 x 1.4 mm SOT315-1
c
y
60 41
61 40 Z E
E HE A A2 (A 3)
A1
w M
θ
bp Lp
pin 1 index L
80 21
1 20 detail X
ZD v M A
e w M
bp
D B
HD v M B
0 5 10 mm
scale
Note
1. Plastic or metal protrusions of 0.25 mm maximum per side are not included.
00-01-19
SOT315-1 136E15 MS-026
03-02-25
2003 Dec 19 57
Philips Semiconductors Product specification
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Philips Semiconductors Product specification
16.5 Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE(1)
WAVE REFLOW(2)
BGA, HTSSON..T(3), LBGA, LFBGA, SQFP, SSOP..T(3), TFBGA, not suitable suitable
USON, VFBGA
DHVQFN, HBCC, HBGA, HLQFP, HSO, HSOP, HSQFP, HSSON, not suitable(4) suitable
HTQFP, HTSSOP, HVQFN, HVSON, SMS
PLCC(5), SO, SOJ suitable suitable
LQFP, QFP, TQFP not recommended(5)(6) suitable
SSOP, TSSOP, VSO, VSSOP not recommended(7) suitable
CWQCCN..L(8), PMFP(9), WQCCN..L(8) not suitable not suitable
Notes
1. For more detailed information on the BGA packages refer to the “(LF)BGA Application Note” (AN01026); order a copy
from your Philips Semiconductors sales office.
2. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
3. These transparent plastic packages are extremely sensitive to reflow soldering conditions and must on no account
be processed through more than one soldering cycle or subjected to infrared reflow soldering with peak temperature
exceeding 217 °C ± 10 °C measured in the atmosphere of the reflow oven. The package body peak temperature
must be kept as low as possible.
4. These packages are not suitable for wave soldering. On versions with the heatsink on the bottom side, the solder
cannot penetrate between the printed-circuit board and the heatsink. On versions with the heatsink on the top side,
the solder might be deposited on the heatsink surface.
5. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
6. Wave soldering is suitable for LQFP, TQFP and QFP packages with a pitch (e) larger than 0.8 mm; it is definitely not
suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
7. Wave soldering is suitable for SSOP, TSSOP, VSO and VSSOP packages with a pitch (e) equal to or larger than
0.65 mm; it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
8. Image sensor packages in principle should not be soldered. They are mounted in sockets or delivered pre-mounted
on flex foil. However, the image sensor package can be mounted by the client on a flex foil by using a hot bar
soldering process. The appropriate soldering profile can be provided on request.
9. Hot bar or manual soldering is suitable for PMFP packages.
2003 Dec 19 59
Philips Semiconductors Product specification
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
18 DEFINITIONS 19 DISCLAIMERS
Short-form specification The data in a short-form Life support applications These products are not
specification is extracted from a full data sheet with the designed for use in life support appliances, devices, or
same type number and title. For detailed information see systems where malfunction of these products can
the relevant data sheet or data handbook. reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
Limiting values definition Limiting values given are in
for use in such applications do so at their own risk and
accordance with the Absolute Maximum Rating System
agree to fully indemnify Philips Semiconductors for any
(IEC 60134). Stress above one or more of the limiting
damages resulting from such application.
values may cause permanent damage to the device.
These are stress ratings only and operation of the device Right to make changes Philips Semiconductors
at these or at any other conditions above those given in the reserves the right to make changes in the products -
Characteristics sections of the specification is not implied. including circuits, standard cells, and/or software -
Exposure to limiting values for extended periods may described or contained herein in order to improve design
affect device reliability. and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information Applications that are
communicated via a Customer Product/Process Change
described herein for any of these products are for
Notification (CPCN). Philips Semiconductors assumes no
illustrative purposes only. Philips Semiconductors make
responsibility or liability for the use of any of these
no representation or warranty that such applications will be
products, conveys no licence or title under any patent,
suitable for the specified use without further testing or
copyright, or mask work right to these products, and
modification.
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
2003 Dec 19 60
Philips Semiconductors Product specification
Purchase of Philips I2C components conveys a license under the Philips’ I2C patent to use the
components in the I2C system provided the system conforms to the I2C specification defined by
Philips. This specification can be ordered using the code 9398 393 40011.
2003 Dec 19 61
Philips Semiconductors – a worldwide company
Contact information
Printed in The Netherlands R32/01/pp62 Date of release: 2003 Dec 19 Document order number: 9397 750 10571