HW#2 Solutions Problem 1: Only Stepper B Will Meet Both R and DOF Requirements
HW#2 Solutions Problem 1: Only Stepper B Will Meet Both R and DOF Requirements
HW#2 Solutions Problem 1: Only Stepper B Will Meet Both R and DOF Requirements
HW#2 Solutions
Problem 1
From k (0.436/NA) =0.5 and 0.436/ [2(NA)2]=1, we obtain NA=0.467 and k = 0.536
For Stepper A: R = 0.536 0.365 / 0.6 = 0.326um -- does not meet R requirement
DOF = 0.365/ [2 (0.6)2] = 0.507um > 0.4 um – o.k.
Problem 2
Photomask alignment marks
(i) L =L T (glass - Si)
Maximum run in/out error = ± 0.5 m with respect to the alignment
marks on wafer => L = ±1 m on photomask
0.5 um
0.5 um ±10-4cm
Tmaximum = = ±1.5°C
Si wafer alignment marks 10 cm (9-2.3)10-6
Problem 3
The center only has translational errors: 0.5 m along x, -0.5 m along y.
After substracting the translational error, we have:
(-0.5, 0.2)
(0.5,-0.2)
Problem 4
(a) Example 1
For identical optical images, resist openings at the oxide/resist interface will have different sizes on thicker
and thinner oxide regions. If the resist is used as the etching mask for oxide, we end up with different oxide
feature sizes.
Photon Intensity due to standing wave
max
min Photoresist
Oxide
min
min
Reflecting substrate
Example 2
Positive
After development Photoresist.
(b) (1)Light reflection from the slope can cause local increase of exposure which leads to linewidth
variation during resist development. ARC reduces this reflection.
Photoresist
photons
Aluminum
Substrate
(2) Less reflected beam gives less standing wave effect, which gives also less variation of linewidth.
(3) Resist has more uniform thickness due to ARC layer planarization. The required development time can
be more uniform. Less linewidth variation also.
Problem 5
(a) The resist has infinite contrast.
(b) (i)
(ii)
Problem 6
(a)
Parameter Desired Value Reason
(High, Low, or
Depends)
/NA Depends Low /NA gives smaller printable feature but
decreases DOF
Aerial Image contrast High Features still printable even with less resist contrast
Slope of aerial image intensity High Steeper slope for developed resist pattern
versus position
Resist Contrast High Steeper slope for developed resist pattern