5STP 26N6500 - 5SYA1001-07 Mar 14
5STP 26N6500 - 5SYA1001-07 Mar 14
5STP 26N6500 - 5SYA1001-07 Mar 14
IT(AV)M = 2810 A
IT(RMS) = 4410 A
ITSM
VT0
=
=
65·103 A
1.12 V
5STP 26N6500
rT = 0.29 m
Doc. No. 5SYA1001-07 Mar. 14
Blocking
Maximum rated values 1)
Parameter Symbol Conditions 5STP 26N6500 Unit
Max. surge peak forward and VDSM, tp = 10 ms, f = 5 Hz
6500 V
reverse blocking voltage VRSM Tvj = 5…125 °C, Note 1
f = 50 Hz, tp = 10 ms, tp1 = 250 s,
Max repetitive peak forward VDRM,
Tvj = 5…125 °C, Note 1, Note 2 6500 V
and reverse blocking voltage VRRM
VAK VDRM,VRRM
tp1 VDWM,VRWM
Max crest working forward VDWM,
4340 V
and reverse voltages VRWM tp t
Critical rate of rise of
dv/dtcrit Exp. to 0.67∙VDRM, Tvj = 125 °C 3000 V/µs
commutating voltage
Characteristic values
Parameter Symbol Conditions min typ max Unit
Forward leakage current IDRM VDRM, Tvj = 125 °C 600 mA
Reverse leakage current IRRM VRRM, Tvj = 125 °C 600 mA
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below +5 °C.
Note 2: Recommended minimum ratio of VDRM / VDWM or VRRM / VRWM = 2. See App. Note 5SYA 2051.
Mechanical data
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Mounting force FM 81 90 108 kN
Acceleration a Device unclamped 50 m/s2
Acceleration a Device clamped 100 m/s2
Characteristic values
Parameter Symbol Conditions min typ max Unit
Weight m 2.9 kg
Housing thickness H FM = 90 kN, Ta = 25 °C 35 35.6 mm
Surface creepage distance DS 56 mm
Air strike distance Da 22 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
5STP 26N6500
On-state
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Average on-state current IT(AV)M Half sine wave, Tc = 70 °C 2810 A
RMS on-state current IT(RMS) 4410 A
Peak non-repetitive surge tp = 10 ms, Tvj = 125 °C,
ITSM 65·103 A
current sine half wave,
Limiting load integral I2t VD = VR= 0 V, after surge 21.13·106 A2s
Peak non-repetitive surge tp = 10 ms, Tvj = 125 °C,
ITSM 40·103 A
current sine half wave,
Limiting load integral I2t VR = 0.6·VRRM, after surge 8.0·106 A2s
Characteristic values
Parameter Symbol Conditions min typ max Unit
On-state voltage VT IT = 3000 A, Tvj = 125 °C 2 V
Threshold voltage V(T0) 1.12 V
IT = 1300 A - 4000 A, Tvj = 125 °C
Slope resistance rT 0.29 m
Tvj = 25 °C 125 mA
Holding current IH
Tvj = 125 °C 75 mA
Tvj = 25 °C 500 mA
Latching current IL
Tvj = 125 °C 250 mA
Switching
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Tvj = 125 °C, Cont.
200 A/µs
Critical rate of rise of on-state ITRM = 3000 A, f = 50 Hz
di/dtcrit
current VD 0.67·VDRM, Cont.
IFG = 2 A, tr = 0.5 µs 1000 A/µs
f = 1 Hz
Tvj = 125 °C, ITRM = 2000 A,
Circuit-commutated turn-off
tq VR = 200 V, diT/dt = -1.5 A/µs, 800 µs
time
VD 0.67VDRM, dvD/dt = 20 V/µs
Characteristic values
Parameter Symbol Conditions min typ max Unit
Reverse recovery charge Qrr Tvj = 125 °C, ITRM = 2000 A, 3500 5800 µAs
Reverse recovery current IRM VR = 200 V, diT/dt = -1.5 A/µs 60 90 A
Tvj = 25 °C, VD = 0.4VRM,
Gate turn-on delay time tgd 3 µs
IFG = 2 A, tr = 0.5 µs
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1001-07 Mar. 14 page 2 of 7
5STP 26N6500
Triggering
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Peak forward gate voltage VFGM 12 V
Peak forward gate current IFGM 10 A
Peak reverse gate voltage VRGM 10 V
Average gate power loss PG(AV) see Fig. 7 W
Characteristic values
Parameter Symbol Conditions min typ max Unit
Gate-trigger voltage VGT Tvj = 25 °C 2.6 V
Gate-trigger current IGT Tvj = 25 °C 400 mA
Gate non-trigger voltage VGD VD = 0.4·VDRM, Tvjmax = 125 °C 0.3 V
Gate non-trigger current IGD VD = 0.4·VDRM, Tvjmax = 125 °C 10 mA
Thermal
Maximum rated values 1)
Parameter Symbol Conditions min typ max Unit
Operating junction
Tvj 125 °C
temperature range
Storage temperature range Tstg -40 140 °C
Characteristic values
Parameter Symbol Conditions min typ max Unit
Double-side cooled
Rth(j-c) 5.7 K/kW
Fm = 81... 108 kN
Thermal resistance junction Anode-side cooled
Rth(j-c)A 11.4 K/kW
to case Fm = 81... 108 kN
Cathode-side cooled
Rth(j-c)C 11.4 K/kW
Fm = 81... 108 kN
Double-side cooled
Rth(c-h) 1 K/kW
Thermal resistance case to Fm = 81... 108 kN
heatsink Single-side cooled
Rth(c-h) 2 K/kW
Fm = 81... 108 kN
n
Zth(j - c)(t) = R i (1- e- t/ i )
i 1
i 1 2 3 4
Ri(K/kW) 3.691 1.276 0.492 0.245
i(s) 0.8685 0.1255 0.0168 0.0041
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1001-07 Mar. 14 page 3 of 7
5STP 26N6500
Fig. 4 On-state power dissipation vs. mean on-state Fig. 5 Max. permissible case temperature vs. mean
current, turn-on losses excluded on-state current, switching losses ignored
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1001-07 Mar. 14 page 4 of 7
5STP 26N6500
IG (t)
IGM » 2..5 A
IGon ³ 1.5 IGT
100 % IGM diG/dt ³ 2 A/s
90 % tr 1 s
tp(IGM) » 5...20 s
diG/dt
IGon
10 %
tr t
tp (IGM) tp (IGon)
Fig. 6 Recommended gate current waveform Fig. 7 Max. peak gate power loss
Fig. 8 Reverse recovery charge vs. decay rate of Fig. 9 Peak reverse recovery current vs. decay
on-state current rate of on-state current
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1001-07 Mar. 14 page 5 of 7
5STP 26N6500
Turn-on and Turn-off losses
Fig. 10 Turn-on energy, half sinusoidal waves Fig. 11 Turn-on energy, rectangular waves
Fig. 12 Turn-off energy, half sinusoidal waves Fig. 13 Turn-off energy, rectangular waves
-dv/dtcom -VRRM
Fig. 14 Current and voltage waveforms at turn-off Fig. 15 Relationships for power loss
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1001-07 Mar. 14 page 6 of 7
5STP 26N6500
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5SYA 2049 Voltage definitions for phase control thyristors and diodes
5SYA 2051 Voltage ratings of high power semiconductors
5SYA 2034 Gate-Drive Recommendations for PCT's
5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors
5SYA 2102 Surge currents for Phase Control Thyristors
5SZK 9104 Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE
5SZK 9105 Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION
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Please refer to http://www.abb.com/semiconductors for current version of documents.
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.