Preliminary Data Sheet PD-20999 rev.

A 10/99

100BGQ100
100BGQ100J
SCHOTTKY RECTIFIER 100 Amp

Major Ratings and Characteristics Description/Features

This NEW Schottky rectifier has been optimized for low reverse
Characteristics Values Units leakage at high temperature
The proprietary barrier technology allows for reliable operation up
IF(AV) Rectangular waveform 100 A to 175°C junction temperature. Typical applications are in
switching power supplies, converters, reverse battery protection,
@ TC 129 °C and redundant power subsystems.

I DC Maximum 141 A 175°C TJ operation

High Frequency Operation
VRRM 100 V
Low forward voltage drop
IFSM @ tp = 5 µs sine 6300 A Continuous High Current operation
VF @100 Apk typical 0.74 V Guard ring for enhanced ruggedness and long term
reliability
@ TJ 125 °C
PowIRtabTM package
TJ range - 55 to 175 °C

Case Styles

100BGQ100 100BGQ100J

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100BGQ100, 100BGQ100J
Preliminary Data Sheet PD-20999 rev. A 10/99

Voltage Ratings
Part number 100BGQ100, 100BGQ100J
VR Max. DC Reverse Voltage (V)
100
VRWM Max. Working Peak Reverse Voltage (V)

Absolute Maximum Ratings

Parameters Values Units Conditions
IF(AV) Max. Average Forward Current 100 A 50% duty cycle @ TC = 129°C, rectangular wave form
IF(RMS) RMS Forward Current 141 A T C = 120°C
IFSM Max. Peak One Cycle Non-Repetitive 6300 5µs Sine or 3µs Rect. pulse Following any rated
A load condition and
Surge Current 800 10ms Sine or 6ms Rect. pulse with rated VRRM applied
EAS Non-RepetitiveAvalancheEnergy 9 mJ TJ = 25 °C, IAS = 2 Amps, L = 4.5 mH
IAR Repetitive Avalanche Current 2 A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. V A = 1.5 x VR typical

Electrical Specifications
Parameters Values Units Conditions
Typ. Max.
VFM Forward Voltage Drop (1) (2) 0.80 0.84 V @ 50A
TJ = 25 °C
0.96 1.04 V @ 100A
0.64 0.66 V @ 50A
TJ = 125 °C
0.74 0.77 V @ 100A
IRM Reverse Leakage Current (1) 22 300 µA TJ = 25 °C
VR = rated VR
14 18 mA TJ = 125°C
VF(TO) Threshold Voltage 0.484 V TJ = TJ max.
rt Forward Slope Resistance 2.0 mΩ
CT Max. Junction Capacitance 1320 pF VR = 5VDC, (test signal range 100Khz to 1Mhz) 25 °C
LS Typical Series Inductance 3.5 nH Measured from tab to mounting plane
dv/dt Max. Voltage Rate of Change 10,000 V/ µs
(Rated V R)
(1) Pulse Width < 300µs, Duty Cycle < 2%
(2) VFM = V F(TO) + rt x IF
Thermal-Mechanical Specifications
Parameters Values Units Conditions
TJ Max. Junction Temperature Range -55 to 175 °C
Tstg Max. Storage Temperature Range -55 to 175 °C
RthJC Max. Thermal Resistance Junction 0.50 °C/W DCoperation
to Case
RthCS Typical Thermal Resistance, Case to 0.20 °C/W Mounting surface , smooth and greased
Heatsink
wt Approximate Weight 5 (0.18) g (oz.)
T Mounting Torque Min. 1.2 (10) N*m
Max. 2.4 (20) (Ibf-in)

Case Style PowIRtabTM

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 100BGQ100, 100BGQ100J
Preliminary Data Sheet PD-20999 rev. A 10/99

1000 1000

100 TJ = 175°C

Reverse Current - I R (m A)
150°C
10
125°C

1 100°C
75°C
0.1
50°C

0.01
Instantaneous Forward Current - I F (A)

100 25°C
0.001

0.0001
0 20 40 60 80 100
Reverse Voltage - VR (V)
TJ = 175°C Fig. 2 - Typical Values of Reverse Current
Vs. Reverse Voltage
TJ = 125°C
10000
TJ = 25°C
(pF)

10
T

T = 25°C
Junction Capacitance - C

1000

1 100
0 0.5 1 1.5 2 2.5 0 20 40 60 80 100
Forward Voltage Drop - V FM (V) Reverse Voltage - VR (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 3 - Typical Junction Capacitance
Vs. Reverse Voltage
1
Thermal Impedance Z thJC (°C/W)

D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.1 PDM

t1
Single Pulse
(Thermal Resistance) t2
Notes:
1. Duty factor D = t 1/ t 2
2. Peak TJ = PDM x Z thJC+ T C
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t 1 , Rectangular Pulse Duration (Seconds)
Fig. 4 - Maximum Thermal Impedance Z thJC Characteristics

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100BGQ100, 100BGQ100J
Preliminary Data Sheet PD-20999 rev. A 10/99

180 120
D = 0.20
Allowable Case Temperature - (°C)

170
D = 0.25

Average Power Loss - (Watts)

100
D = 0.33
160
D = 0.50
80 D = 0.75
150
RMS Limit DC
140 DC 60

130
Square wave (D = 0.50) 40
120 80% Rated V applied
R
20
110
see note (3)
100 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Average Forward Current - I F(AV) (A) Average Forward Current - I F(AV) (A)
Fig. 5 - Maximum Allowable Case Temperature Fig. 6 - Forward Power Loss Characteristics
Vs. Average Forward Current

10000
(A)
FSM
Non-Repetit ive Surge Current - I

1000

At Any Rated Load Condition

And With Rated V Applied
RRM
Following Surge

100
10 100 1000 10000
Square Wave Pulse Duration - t p (microsec)
Fig. 7 - Maximum Non-Repetitive Surge Current

HIGH-SPEED
DUT IRFP460 SWITCH

FREE-WHEEL
Rg = 25 ohm Vd = 25 Volt
DIODE +

CURRENT 40HFL40S02
MONITOR

Fig. 8 - Unclamped Inductive Test Circuit

(3) Formula used: T C = TJ - (Pd + PdREV) x R thJC ;

Pd = Forward Power Loss = I F(AV) x VFM @ (IF(AV) / D) (see Fig. 6);
Pd REV = Inverse Power Loss = VR1 x IR (1 - D); IR @ VR1 = 80% rated VR

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 100BGQ100, 100BGQ100J
Preliminary Data Sheet PD-20999 rev. A 10/99

Ordering Information Table

Device Code

100 BGQ 100 J

1 2 3 4

1 - Current Rating
2 - Essential Part Number
3 - Voltage code: Code = VRRM
4 - none = PowIRtabTMstandard
6 J = Short Lead Version

Outline Table

Case Style PowIRtabTM

Dimensions in millimeters

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100BGQ100, 100BGQ100J
Preliminary Data Sheet PD-20999 rev. A 10/99

Outline Table

Case Style PowIRtabTM "J" version

Dimensions in millimeters

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
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IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.

http://www.irf.com Fax-On-Demand: +44 1883 733420 Data and specifications subject to change without notice.

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