Scribd Logo
Upload

Welcome to Scribd!

  • 33 views

    Datasheet Diodo Zener 1n4148

    Uploaded by

    Alan Torrez
    This document provides specifications for 1N4148 500mW epitaxial planar diodes in a DO-35 package. Key specifications include a maximum forward voltage of 1V at 10mA, maximum reverse current of 5uA at 75V, maximum frequency of 100MHz, and maximum reverse recovery time of 4ns. The diodes can dissipate up to 500mW of power and have a operating temperature range of -25°C to 85°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd

    Datasheet Diodo Zener 1n4148

    Uploaded by

    Alan Torrez
    33 views1 page
    This document provides specifications for 1N4148 500mW epitaxial planar diodes in a DO-35 package. Key specifications include a maximum forward voltage of 1V at 10mA, maximum reverse current of 5uA at 75V, maximum frequency of 100MHz, and maximum reverse recovery time of 4ns. The diodes can dissipate up to 500mW of power and have a operating temperature range of -25°C to 85°C.

    Original Description:

    Diodo zener

    Copyright

    © © All Rights Reserved

    Available Formats

    PDF, TXT or read online from Scribd

    Did you find this document useful?

    Is this content inappropriate?

    This document provides specifications for 1N4148 500mW epitaxial planar diodes in a DO-35 package. Key specifications include a maximum forward voltage of 1V at 10mA, maximum reverse current of 5uA at 75V, maximum frequency of 100MHz, and maximum reverse recovery time of 4ns. The diodes can dissipate up to 500mW of power and have a operating temperature range of -25°C to 85°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    33 views1 page

    Datasheet Diodo Zener 1n4148

    Uploaded by

    Alan Torrez
    This document provides specifications for 1N4148 500mW epitaxial planar diodes in a DO-35 package. Key specifications include a maximum forward voltage of 1V at 10mA, maximum reverse current of 5uA at 75V, maximum frequency of 100MHz, and maximum reverse recovery time of 4ns. The diodes can dissipate up to 500mW of power and have a operating temperature range of -25°C to 85°C.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 1

    Data Sheet 500 mW EPITAXIAL

    PLANAR DIODES
    1N4148

    Description Mechanical Dimensions

    JEDEC
    D0-35 .120 1.00 Min.
    .200

    .060
    .090 .018
    .022

    Features
    n INDUSTRY STANDARD DO-35
    n PLANAR PROCESS PACKAGE
    n 500 mW POWER DISSIPATION n MEETS UL SPECIFICATION 94V-0

    1N4148 Units
    Maximum Ratings 1N4148
    Peak Reverse Voltage...VRM 100 Volts
    RMS Reverse Voltage...VR(rms) 75 Volts

    Average Forward Rectified Current...IO ............................................. 215 ............................................... mAmps


    Non-Repetitive Peak Forward Surge Current...IFSM ............................................. 500 ............................................... mAmps
    Power Dissipation...PD ............................................. 500 ............................................... mW
    Operating Temperature Range...TJ ......................................... -25 to 85 .......................................... °C
    Storage Temperature Range...TSTRG ......................................... -65 to 150 .......................................... °C
    Electrical Characteristics
    Maximum Forward Voltage...VF ............................................. 1.0 ............................................... Volts
    @ IF = 10 mA
    Maximum DC Reverse Current...IR @ VR = 75v ............................................. 5.0 ............................................... µAmps
    Maximum Frequency...f ............................................. 100 ............................................... MHz
    Maximum Diode Capacitance...CD ............................................. 2.0 ............................................... pF
    Maximum Reverse Recovery Time...TRR ............................................. 4.0 ............................................... ns

    .01 uF Device Under TTest


    est Output
    PVV = 100nS 0.1 IR
    IF Trr
    5K Ohms
    IR
    50 Ohms

    RG = 50 Ohms

    Page 8-4

    You might also like