TXN/TYN 0512 --->

TXN/TYN 1012

SCR

..
FEATURES
HIGH SURGE CAPABILITY

.. HIGH ON-STATE CURRENT

HIGH STABILITY AND RELIABILITY
TXN Serie :
INSULATED VOLTAGE = 2500V(RMS)
(UL RECOGNIZED : E81734)

DESCRIPTION
The TYN/TXN 0512 ---> TYN/TXN 1012 Family G
A
of Silicon Controlled Rectifiers uses a high per- K
formance glass passivated technology.
This general purpose Family of Silicon Controlled TO220AB
Rectifiers is designed for power supplies up to (Plastic)
400Hz on resistive or inductive load.

ABSOLUTE RATINGS (limiting values)

Symbol Parameter Value Unit

IT(RMS) RMS on-state current TXN Tc=80°C 12 A

(180° conduction angle) TYN Tc=90°C

IT(AV) Average on-state current TXN Tc=80°C 8 A

(180° conduction angle,single phase circuit) TYN Tc=90°C

ITSM Non repetitive surge peak on-state current tp=8.3 ms 125 A

( Tj initial = 25°C )
tp=10 ms 120

I2 t I2 t value tp=10 ms 72 A2s

dI/dt Critical rate of rise of on-state current 100 A/µs

Gate supply : IG = 100 mA diG/dt = 1 A/µs

Tstg Storage and operating junction temperature range - 40 to + 150 °C

Tj - 40 to + 125 °C

Tl Maximum lead temperature for soldering during 10 s at 4.5 mm 260 °C

from case

Symbol Parameter TYN/TXN Unit

0512 112 212 412 612 812 1012

VDRM Repetitive peak off-state voltage 50 100 200 400 600 800 1000 V
VRRM Tj = 125 °C

April 1995 1/5

TXN/TYN 0512 ---> TXN/TYN 1012

THERMAL RESISTANCES

Symbol Parameter Value Unit

Rth (j-a) Junction to ambient 60 °C/W

Rth (j-c) DC Junction to case for DC TXN 3.5 °C/W

TYN 2.5

GATE CHARACTERISTICS (maximum values)

PG (AV) = 1W PGM = 10W (tp = 20 µs) IFGM = 4A (tp = 20 µs) VRGM = 5 V.

ELECTRICAL CHARACTERISTICS

Symbol Test Conditions Value Unit

IGT VD =12V (DC) R L=33Ω Tj=25°C MAX 15 mA

VGT VD =12V (DC) R L=33Ω Tj=25°C MAX 1.5 V

VGD VD =VDRM RL=3.3kΩ Tj= 125°C MIN 0.2 V

tgt VD =VDRM IG = 40mA Tj=25°C TYP 2 µs

dIG/dt = 0.5A/µs

IL IG= 1.2 IGT Tj=25°C TYP 50 mA

IH IT= 100mA gate open Tj=25°C MAX 30 mA

VTM ITM= 24A tp= 380µs Tj=25°C MAX 1.6 V

IDRM VDRM Rated Tj=25°C MAX 0.01 mA

IRRM VRRM Rated
Tj= 125°C 3

dV/dt Linear slope up to VD=67%VDRM Tj= 125°C MIN 200 V/µs

gate open

tq VD =67%VDRM ITM= 24A VR= 25V Tj= 125°C TYP 70 µs

dITM/dt=30 A/µs dVD /dt= 50V/µs

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 TXN/TYN 0512 ---> TXN/TYN 1012
Fig.1 : Maximum average power dissipation versus Fig.2 : Correlation between maximum average power
average on-state current (TXN). dissipation and maximum allowable temperatures (Tamb
and T case) for different thermal resistances heatsink +
contact (TXN).

Fig.3 : Maximum average power dissipation versus Fig.4 : Correlation between maximum average power
average on-state current (TYN). dissipation and maximum allowable temperatures (Tamb
and T case) for different thermal resistances heatsink +
contact (TYN).

Fig.5 : Average on-state current versus case Fig.6 : Average on-state current versus case
temperature (TXN). temperature (TYN).

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TXN/TYN 0512 ---> TXN/TYN 1012
Fig.7 : Relative variation of thermal impedance versus Fig.8 : Relative variation of gate trigger current versus
pulse duration. junction temperature.

Zth/Rth
1

Zt h( j-c)

0.1 Zt h(j-a)

tp( s)
0.01
1E-3 1E-2 1E-1 1E +0 1 E +1 1 E +2 5 E +2

Fig.9 : Non repetitive surge peak on-state current Fig.10 : Non repetitive surge peak on-state current for
versus number of cycles. a sinusoidal pulse with width : t ≤ 10 ms, and
corresponding value of I2t.

Fig.11 : On-state characteristics (maximum values).

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 TXN/TYN 0512 ---> TXN/TYN 1012

PACKAGE MECHANICAL DATA

TO220AB Plastic

REF. DIMENSIONS
Millimeters Inches
A
H
Min. Max. Min. Max.
G J A 10.00 10.40 0.393 0.409
B 15.20 15.90 0.598 0.625
I D
C 13.00 14.00 0.511 0.551
B D 6.20 6.60 0.244 0.259
F 3.50 4.20 0.137 0.165
G 2.65 2.95 0.104 0.116
F H 4.40 4.60 0.173 0.181
O L
P C I 3.75 3.85 0.147 0.151
J 1.23 1.32 0.048 0.051
M L 0.49 0.70 0.019 0.027
=N=
M 2.40 2.72 0.094 0.107
N 4.80 5.40 0.188 0.212
O 1.14 1.70 0.044 0.066
P 0.61 0.88 0.024 0.034
Cooling method : by conduction (method C)
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-T HOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.

 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.

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