Lecture Ten: Resonance
Lecture Ten: Resonance
Lecture Ten: Resonance
Lecture Ten
Resonance
10.1 Introduction
This lecture will introduce the very important resonant (or tuned) circuit, which is
fundamental to the operation of a wide variety of electrical and electronic systems in use today.
The resonant circuit is a combination of R, L, and C elements having a frequency response
characteristic similar to the one appearing in Fig. 10.1. Note in the figure that the response is a
maximum for the frequency fr, decreasing to the right and left of this frequency. In other words,
for a particular range of frequencies the response will be near or equal to the maximum. The
frequencies to the far left or right have very low voltage or current levels and, for all practical
purposes, have little effect on the system’s response. The radio or television receiver has a
response curve for each broadcast station of the type indicated in Fig. 10.1.
which you will note is the maximum current for the circuit of Fig. 10.2 for an applied voltage E
since ZT is a minimum value.
The average power to the resistor at resonance is equal to I2 R, and the reactive power to the
capacitor and inductor are I2 XC and I2 XL, respectively.
The total apparent power is equal to the average power dissipated by the resistor since Q L = QC.
The power factor of the circuit at resonance is
𝑷
pF = cos θ = =𝟏 (10.6)
𝑺
Plotting the power curves of each element on the same set of axes (Fig. 10.3), we note that, even
though the total reactive power at any instant is equal to zero.
Fig. 10.3 Power curves at resonance for the series resonant circuit.
𝑿𝑳 𝝎𝒔𝑳 𝟏
𝑸𝒔 = = = (10.7)
𝑹 𝑹 𝝎𝒔 𝑪𝑹
𝟏 𝐿
Also 𝑸𝒔 = √ (10.8)
𝑹 𝐶
By applying the voltage divider rule to the circuit of Fig. 10.2, we obtain
VLs = Qs E
VCs = Qs E
Since Qs is usually greater than 1, the voltage across the capacitor or inductor of a series resonant
circuit can be significantly greater than the input voltage.
y=a.x +b
(where 2πL is the slope), producing the X L results is straight line
shown in Fig. 20.4.
For the capacitor,
𝟏 𝟏
𝑿𝑪 = 𝐨𝐫 𝑿𝑪 𝒇 =
𝟐𝝅𝒇𝑪 𝟐𝝅𝑪
Fig. 10.5 Z T versus frequency for the
which becomes y.x = k, the equation for a hyperbola, where series resonant circuit.
1
y (variable) =XC, x (variable) = f, k (constant) =
2𝜋𝐶
The hyperbolic curve for XC(f) is plotted in Fig. 10.4. In particular, note its very large magnitude
at low frequencies and its rapid drop- off as the frequency increases.
The condition of resonance is now clearly defined by the point of intersection, where XL=
XC . For frequencies less than fs , it is also quite clear that the network is primarily capacitive (X C
> XL ). For frequencies above the resonant condition, XL > XC , and the network is inductive.
Applying eq. (10.9) to the curves of Fig. 10.4, we obtain the curve for Z T (f) as shown in Fig.
10.5. The minimum impedance occurs at the resonant frequency and is equal to the resistance R.
Note that the curve is not symmetrical about the resonant frequency (especially at higher values
of ZT).
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At low frequencies, XC > XL, and v will approach ̶ 90° (capacitive), as shown in Fig. 10.6,
whereas at high frequencies, XL > XC, and v will approach 90°In general, therefore, for a series
resonant circuit:
f < fs: network capacitive; I leads E
f > fs: network inductive; E leads I
f = fs: network resistive; E and I are in phase.
10.5 Selectivity
If we now plot the magnitude of the current I = E/ZT versus frequency for a fixed applied voltage
E, we obtain the curve shown in Fig. 10.7, which rises from zero to a maximum value of E/R
(where ZT is a minimum) and then drops toward zero (as ZT increases) at a slower rate than it rose
to its peak value. The curve is actually the inverse of the impedance-versus-frequency curve.
Since the ZT curve is not absolutely symmetrical about the resonant frequency, the curve of the
current versus frequency has the same property.
There is a definite range of frequencies at which the current is near its maximum value and
the impedance is at a minimum. Those frequencies corresponding to 0.707 of the maximum
current are called the band frequencies, cutoff frequencies, or half-power frequencies. They
are indicated by f1 and f2 in Fig. 10.7. The range of frequencies between the two is referred to as
the bandwidth (abbreviated BW) of the resonant circuit. Half-power frequencies are those
frequencies at which the power delivered is one-half that delivered at the resonant frequency; that
is,
𝟏
PHPF = Pmax (10.11)
𝟐
Since the resonant circuit is adjusted to select a band of frequencies, the curve of Fig.
10.7 is called the selectivity curve. The term is derived from the fact that one must be selective in
choosing the frequency to ensure that it is in the bandwidth. The
smaller the bandwidth, the higher the selectivity. The shape of
the curve, as shown in Fig. 10.8, depends on each element of the
series R-L-C circuit. Substituting √𝟐𝑹 into the equation for the
magnitude of ZT, we find that
𝒁𝑻 = √[𝑹]𝟐 + [𝑿𝑳 − 𝑿𝑪 ]𝟐
𝟏 𝐑 𝟏 𝐑 𝟐 𝟒
𝒇𝟐 = [ + √( ) + ] (10.12)
𝟐𝛑 𝟐𝐋 𝟐 𝐋 𝐋𝐂
If we repeat the same procedure for XC > XL, which relates to ω1 or f1, the solution f1 becomes
𝟏 𝐑 𝟏 𝐑 𝟐 𝟒
𝒇𝟏 = [− + √( ) + ] (10.13)
𝟐𝛑 𝟐𝐋 𝟐 𝐋 𝐋𝐂
The ratio BW/fs is sometimes called the fractional bandwidth, providing an indication of the
width of the bandwidth compared to the resonant frequency.
𝒇𝒔 = √𝒇𝟐 𝒇𝟏 (10.16)
10.6 VR, VL, AND VC
Plotting the magnitude (effective value) of the voltages VR, VL, and VC and the current I
versus frequency for the series resonant circuit on the same set of axes, we obtain the curves
shown in Fig. 10.9. Note that the VR curve has the same shape as the I curve and a peak value
equal to the magnitude of the input voltage E. If Q <10 the capacitor max voltage at fCmax < fs,
while the inductor max voltage at fLmax > fs.
The higher the Qs of the circuit, the closer fCmax will be to fs, and the closer VCmax ≅ QsE,
and the closer fLmax will be to fs, and the closer VLmax ≅ QsE,
FIG. 10.9 VR, VL, VC, and I versus frequency for a series resonant circuit.
For the condition Qs ≥ 10, the curves of Fig. 10.9 will appear as shown in Fig. 10.10. Note
that they each peak (on an approximate basis) at the resonant frequency and have a similar shape.
FIG. 10.10 VR, VL, VC, and I for a series resonant circuit where Qs ≥ 10.
In review,
1. VC and VL are at their maximum values at or near resonance (depending on Qs).
2. At very low frequencies, VC is very close to the source voltage and V L is very close to zero
volts, whereas at very high frequencies, VL approaches the source voltage and V C approaches
zero volts.
3. Both VR and I peak at the resonant frequency and have the same shape.
VR = E = 10 V ∠0°
VL = (I ∠0°)(XL∠90°) = (5 ∠0°)(10 ∠ 90°) = 50 V ∠90°
VC= (I ∠0°)(XC∠ −90°) = (5 ∠0°)(10 ∠ −90°) = 50 V ∠ −90° FIG. 10.11 Example 10.1.
𝑋𝐿 10Ω
b. 𝑄𝑠 = = =5
𝑅 2Ω
𝑓𝑠 5000𝐻𝑧
c. BW = f2 ̶ f1= = =1000 Hz
𝑄𝑠 5
1 1 1
d. PHPF = Pmax = I2max R = (5 A)2(2 Ω) = 25 W
2 2 2
Example 10.3: A series R-L-C circuit has a series resonant frequency of 12,000 Hz.
a. If R = 5 Ω, and if XL at resonance is 300 Ω, find the bandwidth.
b. Find the cutoff frequencies.
Solutions:
𝑋𝐿 300
a. 𝑄𝑠 = = = 60
𝑅 5
𝑓𝑠 12000 𝐻𝑧
𝐵𝑊 = = = 200 𝐻𝑧
𝑄𝑠 60
Example 10.4:
a. Determine the Qs and bandwidth for the response curve of
Fig. 10.10.
b. For C = 101.5 nF, determine L and R for the series
resonant circuit.
c. Determine the applied voltage.
Solutions:
a. The resonant frequency is 2800 Hz. At 0.707 times the peak value,
BW = 200 Hz
𝑓𝑠 2800
and 𝑄𝑠 = = = 14
𝐵𝑊 200
𝟏 𝟏
b. 𝒇𝒔 = 𝒐𝒓 𝑳 =
𝟐𝝅√𝑳𝑪 𝟒𝝅𝟐 𝒇𝟐𝒔 𝑪
1 FIG. 10.12 Example 10.4.
= = 31.832 mH
4𝜋2 (2.8×103 𝐻𝑧)2 (101.5×10−9 𝐹)
𝑋𝐿 𝑋𝐿 2𝜋(2800 𝐻𝑧)(31.832×10−3 𝐻)
𝑄𝑠 = 𝑜𝑟 𝑅 = = = 40 Ω
𝑅 𝑄𝑠 14
Example 10.5: A series R-L-C circuit is designed to resonant at ωs = 105 rad/s, have a bandwidth
of 0.15ωs, and draw 16 W from a 120-V source at resonance.
a. Determine the value of R.
b. Find the bandwidth in hertz.
c. Find the nameplate values of L and C.
d. Determine the Qs of the circuit.
e. Determine the fractional bandwidth.
Solutions:
𝐸2 𝐸2 (120 𝑉)2
a. 𝑃= 𝑎𝑛𝑑 𝑅 = = = 900 Ω
𝑅 𝑃 16
𝜔𝑠
b. 𝑓𝑠 = = 15,915.49 𝐻𝑧
2𝜋
FIG. 10.19 Substituting the equivalent parallel network for FIG. 10.20 Substituting R = Rs || Rp for
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the series R-L combination of Fig. 20.22. the network of Fig. 10.19.
For unity power factor, the reactive component must be zero as defined by
𝟏 𝟏
− =0
𝑿𝑪 𝑿𝑳𝒑
The resonant frequency, fp, can now be determined from Eq. (10.20) as follows:
𝟐
𝒇𝒑 =
𝟏
√𝟏 − 𝑹𝒍 𝑪 (10.21)
𝟐𝝅√𝑳𝑪 𝑳
𝑹𝟐𝒍 𝑪
𝒇𝒑 = 𝒇𝒔 √𝟏 − (10.22)
𝑳
where fp is the resonant frequency of a parallel resonant circuit (for pF = 1) and fs is the resonant
frequency as determined by XL = XC for series resonance. Note that unlike a series resonant
circuit, the resonant frequency fp is a function of resistance (in this case Rl) and less than fs.
Recognize also that as the magnitude of Rl approaches zero, fp rapidly approaches fs.
Maximum Impedance, fm
At f = fp the input impedance of a parallel resonant circuit will be near its maximum value but not
quite its maximum value due to the frequency dependence of Rp. The frequency at which
maximum impedance will occur is defined by fm and is slightly more than fp, as demonstrated in
Fig. 10.21. The resulting equation, however, is the following:
𝟏 𝑹𝟐𝒍 𝑪
𝒇𝒎 = 𝒇𝒔 √𝟏 − ( ) (10.23)
𝟒 𝑳
Once fm is determined, the network of Fig. 10.20 can be used to determine the magnitude and
phase angle of the total impedance at the resonance condition simply by substituting f = fm and
performing the required calculations. That is, FIG. 10.21 ZT versus frequency for the
parallel resonant circuit.
ZTm = R || XLp || XC f = fm
(10.24)
The quality factor of the parallel resonant circuit continues to be determined by the ratio of the
reactive power to the real power. That is,
𝑅 𝑅
𝑄𝑝 = = (10.26)
𝑋𝐿𝑝 𝑋𝐶
The cutoff frequencies f1 and f2 can be determined using the equivalent network of Fig. 10.20
and the unity power condition for resonance. The half-power frequencies are defined by the
condition that the output voltage is 0.707 times the maximum value.
Setting the input impedance for the network of Fig. 10.20 equal to this value will result in the
following relationship:
1
𝑍= 1 1 = 0.707𝑅
+𝑗(𝜔𝐶− )
𝑅 𝜔𝐿
1 1 1 4𝐶
𝑓2 = [ +√ + ] (10.29b)
4𝜋𝐶 𝑅 𝑅2 𝐿
The effect of Rl, L, and C on the shape of the parallel resonance curve, as shown in Fig. 10.22 for
the input impedance, is quite similar
10.10 Effect of Ql ≥ 10
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Class: Second
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Lecturer: Dr. Hamza Mohammed Ridha Al-Khafaji
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The quality factor of the coil Ql is sufficiently large to permit a number of approximations that
simplify the required analysis.
Inductive Reactance, XLp
XLp ≅ XL Ql ≥ 10
and since resonance is defined by XLp = XC, the resulting condition for resonance is reduced to:
XL ≅ XC Ql ≥ 10
Resonant Frequency, fp (Unity Power Factor)
𝟏
𝒇𝒑 = 𝒇𝒔 √𝟏 − Ql ≥ 10
𝑸𝟐𝒍
𝟏
𝒇𝒑 ≅ 𝒇𝒔 = Ql ≥ 10
𝟐𝝅√𝑳𝑪
𝟏
𝒇𝒎 ≅ 𝒇𝒔 = Ql ≥ 10
𝟐𝝅√𝑳𝑪
Rp
Rp ≅ Q2l Rl
𝑳
𝑹𝒑 ≅ Ql ≥ 10
𝑹𝒍 𝑪
ZTp
The total impedance at resonance is now defined by
ZTp = Rs || Rp = Rs || Q2l Rl Ql ≥ 10
Qp ≅ Ql Ql ≥ 10 Rs >> Rp
BW
The bandwidth defined by fp is
𝑓𝑝 1 𝑅 1
BW = f2 ̶ f1 = ≅ [ 𝑙+ ]
𝑄𝑝 2𝜋 𝐿 𝑅𝑠 𝐶
𝑅𝑙
BW = f2 ̶ f1 ≅ Rs = ∞Ω
2𝜋𝐿
IL and IC
IT defined as shown.
VC = VL = VR = IT ZTp = IT Q2l Rl
IC ≅ Ql IT Ql ≥ 10
IL ≅ Ql IT Ql ≥ 10
10.11 Examples (Parallel Resonance)
Example 10.6: Given the parallel network of Fig. 10.24 composed of “ideal” elements:
a. Determine the resonant frequency fp.
b. Find the total impedance at resonance.
c. Calculate the quality factor, bandwidth, and cutoff frequencies f1 and f2 of the system.
d. Find the voltage VC at resonance.
e. Determine the currents IL and IC at resonance.
but XL = XC at resonance, resulting in a zero in the denominator of the equation and a very high
impedance that can be approximated by an open circuit. Therefore,
Eq. (10.29a):
Eq. (10.29b):
Example 10.7 For the parallel resonant circuit of Fig. 10.25 with Rs = ∞Ω:
a. Determine fs, fm, and fp, and compare their levels.
b. Calculate the maximum impedance and the magnitude of the voltage V C at fm.
c. Determine the quality factor Qp.
d. Calculate the bandwidth.
e. Compare the above results with those obtained using the equations associated with Ql ≥10.
Both fm and fp are less than fs, as predicted. In addition, fm is closer to fs than fp, as forecast. fm
is about 0.5 kHz less than fs, whereas fp is about 2 kHz less. The differences among fs, fm, and fp
suggest a low-Q network.
The low Q confirms our conclusion of part (a). The differences among fs, fm, and fp will be
significantly less for higher-Q networks.
Note that f2 ̶ f1 = 40.843 kHz ̶ 39.009 kHz = 1.834 kHz, confirming our solution for the
bandwidth above. Note also that the bandwidth is not symmetrical about the resonant frequency,
with 991 Hz below and 843 Hz above.
Example 10.9: The equivalent network for the transistor configuration of Fig. 10.27 is provided
in Fig. 10.28.
a. Find fp.
b. Determine Qp.
c. Calculate the BW.
d. Determine Vp at resonance.
e. Sketch the curve of VC versus frequency. FIG. 10.27 Example 10.9.
FIG. 10.28
Equivalent network for the transistor
Therefore, fp = fs = 318.31 kHz. Using Eq. (20.31) would result configuration of Fig. 10.27.
in ≅318.5 kHz.
Example 10.10: Repeat Example 10.9, but ignore the effects of Rs, and compare results.
Solutions:
a. fp is the same, 318.31 kHz.
b. For Rs = ∞ Ω,
The results obtained clearly reveal that the source resistance can have a significant impact on the
response characteristics of a parallel resonant circuit.
Example 10.11: Design a parallel resonant circuit to have the response curve of Fig. 10.30 using
a 1-mH, 10-Ω inductor and a current source with an internal resistance of 40 kΩ.
Solution:
BW _fp_Qp
However, the source resistance was given as 40 kΩ. We must therefore add a parallel resistor (R′)
that will reduce the 40 kΩ to approximately 17.298 kΩ; that is,