FDP3651U N-Channel PowerTrench® MOSFET

July 2006

FDP3651U
N-Channel PowerTrench® MOSFET
100V, 80A, 15mΩ
Features Applications
• rDS(on)=13 mΩ(Typ.), VGS = 10V, ID = 40A • DC/DC converters and Off-Line UPS

• Qg(TOT)=49 nc(Typ.), VGS = 10 V • Distributed Power Architectures and VRMs

• Low Miller Charge • Primary Switch for 24V and 48V Systems

• Low Qrr Body Diode • High Voltage Synchronous Rectifier

• UIS Capability (Single Pulse/Repetitive Pulse)

DRAIN
(FLANGE) SOURCE
DRAIN
GATE

TO-220AB
FDP SERIES

MOSFET Maximum Ratings TC = 25°C unless otherwise noted

Symbol Parameter Ratings Units
VDSS Drain to Source Voltage 100 V
VGSS Gate to Source Voltage ±20 V
Drain Current -Continuous 80
ID A
-Pulsed (Note 1) 320
PD Power Dissipation 255 W
EAS Single Pulsed Avalanche Energy (Note 2) 266 mJ
TJ, TSTG Operating and Storage Temperature -55 to 175 °C
Maximum lead temperature soldering purposes,
TL 300 °C
1/8” from case for 5 seconds

Thermal Characteristics
RθJA Thermal Resistance , Junction to Ambient 62 °C/W
RθJC Thermal Resistance , Junction to Case 0.59 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape Width Quantity
FDP3651U FDP3651U Tube N/A 50 units

©2006 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com

FDP3651U Rev. A
 FDP3651U N-Channel PowerTrench® MOSFET
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 100 - - V
VDS = 80V - - 1 µA
IDSS Zero Gate Voltage Drain Current
VGS = 0V TC=150°C - - 250 µA
IGSS Gate to Source Leakage Current VGS = ±20V - - ±100 nA

On Characteristics
VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = -250µA 3.5 4.5 5.5 V
VGS = 10V , ID = 80A - 15 18
rDS(on) Drain to Source On Resistance VGS = 10V , ID = 40A - 13 15 mΩ
VGS=10V, ID=40A,TJ=175oC - 32 37

Dynamic Characteristics
Ciss Input Capacitance - 4152 5522 pF
VDS = 25V,VGS = 0V
Coss Output Capacitance - 485 728 pF
f=1MHz
Crss Reverse Transfer Capacitance - 89 118 pF
Qg(TOT) Total Gate Charge VGS = 0V to 10V - 49 69 nC
Qg(TH) Threshold Gate Charge VGS = 0V to 2V VDD = 50V - 7 9.8 nC
ID = 80A
Qgs Gate to Source Gate Charge - 23 - nC
Qgd Gate to Drain Charge - 16 - nC

Resistive Switching Characteristics

t(on) Turn-On Time - - 64 ns
td(on) Turn-On Delay Time - 15 27 ns
tr Rise Time VDD = 50V, ID = 80A - 16 29 ns
VGS = 10V, RGS = 5.0Ω
td(off) Turn-Off Delay Time - 32 52 ns
tf Fall Time - 14 26 ns
t(off) Turn-Off Time - - 78 ns

Drain-Source Diode Characteristics

ISD = 80A - 0.99 1.25 V
VSD Source to Drain Diode Forward Voltage
ISD = 40A - 0.88 1.0 V
trr Reverse Recovery Time - 70 105 ns
Is = 40 A, di/dt = 100A/µs
Qrr Reverse Recovery Charge - 202 303 nC

Notes:
1. Pulse Test:Pulse Width<300us,Duty Cycle<2.0%
2. L=0.13mH, IAS = 64A, VDD=50V, RG=25 Ω , Starting TJ=25oC

2 www.fairchildsemi.com
FDP3651U Rev. A
 FDP3651U N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

120 5

DRAIN TO SOURCE ON-RESISTANCE

PULSE DURATION = 80µs PULSE DURATION = 80µs
VGS = 7V
VGS = 20V DUTY CYCLE = 0.5%MAX
100 DUTY CYCLE = 0.5%MAX
ID, DRAIN CURRENT (A)

4
VGS = 10V
80

NORMALIZED
VGS = 8V 3 VGS = 8V

60
2
40 VGS = 10V

VGS = 7V 1
20 VGS = 20V

0 0
0 1 2 3 4 5 0 20 40 60 80 100 120
VDS, DRAIN TO SOURCE VOLTAGE (V)
ID, DRAIN CURRENT(A)

Figure 1. On Region Characteristics Figure 2. Normalized On-Resistance vs Drain

Current and Gate Voltage

2.8 60
DRAIN-SOURCE ON-RESISTANCE

ID = 80A RDS(on), ON-RESISTANCE (mΩ) ID = 80A PULSE DURATION = 80µs

2.4 VGS = 10V 50 DUTY CYCLE = 0.5%MAX

2.0 40
NORMALIZED

TJ = 175oC
1.6 30

1.2 20
TJ = 25oC

0.8 10

0.4 0
-80 -40 0 40 80 120 160 200 8 10 12 14 16 18 20
TJ, JUNCTION TEMPERATURE (oC) VGS, GATE TO SOURCE VOLTAGE (V)

Figure 3. Normalized On Resistance vs Junction Figure 4. On-Resistance vs Gate to Source

Temperature Voltage

120 1000
IS, REVERSE DRAIN CURRENT (A)

PULSE DURATION = 80µs VGS = 0V

DUTY CYCLE = 0.5%MAX
ID, DRAIN CURRENT (A)

100 100

80 10 TJ = 175oC
TJ = 175oC

60 1
TJ = 25oC
40 TJ = 25oC 0.1
TJ = -55oC
20 TJ = -55oC 0.01

0 1E-3
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward

Voltage vs Source Current

3 www.fairchildsemi.com
FDP3651U Rev. A
 FDP3651U N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

10 10000
Ciss
VGS, GATE TO SOURCE VOLTAGE(V)

VDD = 45V
VDD = 50V
8
VDD = 55V Coss

CAPACITANCE (pF)
1000
6

Crss
4
100

2
f = 1MHz
VGS = 0V
0 10
0 10 20 30 40 50 60 0.1 1 10 100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE(nC)

Figure 7. Gate Charge Characteristics Figure 8. Capacitance vs Drain to Source Voltage

100 100
PACKAGE MAY LIMIT
IAS, AVALANCHE CURRENT(A)

ID, DRAIN CURRENT (A) CURRENT IN THIS REGION

80

VGS=10V
60
10 TJ = 25oC
VGS=8V
40
TJ = 150oC

20

1 0
-3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 25 50 75 100 125 150 175
tAV, TIME IN AVALANCHE(ms) TC, CASE TEMPERATURE (oC)

Figure 9. Unclamped Inductive Switching Figure 10. Maximum Continuous Drain Current vs
Capability Ambient Temperature

5
500 10
10us TC = 25oC
P(PK), PEAK TRANSIENT POWER (W)

VGS = 10V FOR TEMPERATURES

100
ABOVE 25oC DERATE PEAK
ID, DRAIN CURRENT (A)

4 CURRENT AS FOLLOWS:
10
OPERATION IN THIS 175 – T c
I = I25 -----------------------
10 AREA MAY BE 100us 150
LIMITED BY RDS(ON)

1ms 3
10
1 10ms SINGLE PULSE
SINGLE PULSE
DC
TJ=MAX RATED
Tc=25oC
0.1 10
2

1 10 100 200 10
-5
10
-4
10
-3
10
-2 -1
10 10
0
10
1

VDS, DRAIN TO SOURCE VOLTAGE (V) t, PULSE WIDTH (s)

Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power
Dissipation

4 www.fairchildsemi.com
FDP3651U Rev. A
 FDP3651U N-Channel PowerTrench® MOSFET
Typical Characteristics TJ = 25°C unless otherwise noted

2
1 DUTY CYCLE-DESCENDING ORDER

D = 0.5
NORMALIZED THERMAL

0.2
IMPEDANCE, ZθJA

0.1
0.1 0.05 PDM
0.02
0.01
t1
0.01 SINGLE PULSE t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJc x RθJc + Tc

1E-3
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
t, RECTANGULAR PULSE DURATION(s)

Figure 13. Transient Thermal Response Curve

5 www.fairchildsemi.com
FDP3651U Rev. A
FAIRCHILD SEMICONDUCTOR TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™ FACT Quiet Series™ OCX™ SILENT SWITCHER® UniFET™
ActiveArray™ GlobalOptoisolator™ OCXPro™ SMART START™ VCX™
Bottomless™ GTO™ OPTOLOGIC® SPM™ Wire™
Build it Now™ HiSeC™ OPTOPLANAR™ Stealth™
CoolFET™ I2C™ PACMAN™ SuperFET™
CROSSVOLT™ i-Lo™ POP™ SuperSOT™-3
DOME™ ImpliedDisconnect™ Power247™ SuperSOT™-6
EcoSPARK™ IntelliMAX™ PowerEdge™ SuperSOT™-8
E2CMOS™ ISOPLANAR™ PowerSaver™ SyncFET™
EnSigna™ LittleFET™ PowerTrench® TCM™
FACT® MICROCOUPLER™ QFET® TinyBoost™
FAST® MicroFET™ QS™ TinyBuck™
FASTr™ MicroPak™ QT Optoelectronics™ TinyPWM™
FPS™ MICROWIRE™ Quiet Series™ TinyPower™
FRFET™ MSX™ RapidConfigure™ TinyLogic®
MSXPro™ RapidConnect™ TINYOPTO™
Across the board. Around the world.™ µSerDes™ TruTranslation™
The Power Franchise® ScalarPump™ UHC®
Programmable Active Droop™

DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS
HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE
APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER
ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S
WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR
SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.

As used herein:
1. Life support devices or systems are devices or systems which, 2. A critical component is any component of a life support device or
(a) are intended for surgical implant into the body, or (b) support or system whose failure to perform can be reasonably expected to
sustain life, or (c) whose failure to perform when properly used in cause the failure of the life support device or system, or to affect its
accordance with instructions for use provided in the labeling, can be safety or effectiveness.
reasonably expected to result in significant injury to the user.

PRODUCT STATUS DEFINITIONS

Definition of Terms
Datasheet Identification Product Status Definition
Advance Information Formative or In Design This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I22