AP09N70P-A

Pb Free Plating Product

Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

D
▼ Dynamic dv/dt Rating D BVDSS 650V
▼ Repetitive Avalanche Rated RDS(ON) 0.75Ω
▼ Fast Switching GG ID 9A
▼ Simple Drive Requirement S
S
▼ RoHS Compliant

Description
The TO-220 package is universally preferred for all commercial-
industrial applications. The device is suited for DC-DC ,AC-DC
converters for power applications.
G
D TO-220
S

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 650 V
VGS Gate-Source Voltage ±30 V
ID@TC=25℃ Continuous Drain Current, V GS @ 10V 9 A
ID@TC=100℃ Continuous Drain Current, V GS @ 10V 5 A
1
IDM Pulsed Drain Current 40 A
PD@TC=25℃ Total Power Dissipation 156 W
Linear Derating Factor 1.25 W/℃
2
EAS Single Pulse Avalanche Energy 305 mJ
IAR Avalanche Current 9 A
EAR Repetitive Avalanche Energy 9 mJ
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
Rthj-c Thermal Resistance Junction-case Max. 0.8 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 62 ℃/W

Data & specifications subject to change without notice 200705053-1/4

AP09N70P-A
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=1mA 650 - - V
ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.6 - V/℃
RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=4.5A - - 0.75 Ω
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V
gfs Forward Transconductance VDS=10V, ID=4.5A - 4.5 - S
o
IDSS Drain-Source Leakage Current (Tj=25 C) VDS=600V, VGS=0V - - 10 uA
o
Drain-Source Leakage Current (Tj=150 C) VDS=480V, VGS=0V - - 100 uA
IGSS Gate-Source Leakage VGS=±30V - - ±100 nA
3
Qg Total Gate Charge ID=9A - 44 - nC
Qgs Gate-Source Charge VDS=480V - 11 - nC
Qgd Gate-Drain ("Miller") Charge VGS=10V - 12 - nC
3
td(on) Turn-on Delay Time VDD=300V - 19 - ns
tr Rise Time ID=9A - 21 - ns
td(off) Turn-off Delay Time RG=10Ω,VGS=10V - 56 - ns
tf Fall Time RD=34Ω - 24 - ns
Ciss Input Capacitance VGS=0V - 2660 - pF
Coss Output Capacitance VDS=25V - 170 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 10 - pF

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) VD=VG=0V , VS=1.5V - - 9 A
1
ISM Pulsed Source Current ( Body Diode ) - - 40 A
3
VSD Forward On Voltage Tj=25℃, IS=9A, VGS=0V - - 1.5 V

Notes:
1.Pulse width limited by safe operating area.
o
2.Starting Tj=25 C , VDD=50V , L=6.8mH , RG=25Ω , IAS=9A.
3.Pulse width <300us , duty cycle <2%.

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 AP09N70P-A

10 10

10V 10V
o o
T C =25 C 6.0V T C =150 C 6.0V
8 8
5.0V 5.0V

ID , Drain Current (A)

4.5V
ID , Drain Current (A)

6 6

4 4

4.5V
4.0V
2 2

4.0V V G = 3 .5 V

V G = 3 .5 V
0 0

0 3 6 9 12 0 5 10 15 20 25

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1.2 3

I D =4.5A
V G =10V
Normalized BVDSS (V)

1.1
Normalized RDS(ON)

0.9

0.8 0
-50 0 50 100 150 -50 0 50 100 150

T j , Junction Temperature ( C)
o
T j , Junction Temperature ( o C )

Fig 3. Normalized BVDSS v.s. Junction Fig 4. Normalized On-Resistance

Temperature v.s. Junction Temperature
100 5

10
VGS(th) (V)

T j = 150 o C
IS (A)

o 3
T j = 25 C

0.1 1
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

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AP09N70P-A
f=1.0MHz
16 10000
VGS , Gate to Source Voltage (V)

I D =9A
C iss
12

V DS =320V
V DS =400V
V DS =480V C oss

C (pF)
8 100

4 C rss

0 1
0 20 40 60 1 5 9 13 17 21 25 29

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1
Normalized Thermal Response (Rthjc)

Duty factor=0.5

0.2
10 10us
0.1
100us
ID (A)

0.1
0.05

1ms
0.02 PDM
1
t
10ms 0.01
T c =25 o C T

Single Pulse
Single Pulse 100ms Duty factor = t/T
Peak Tj = PDM x Rthjc + T C

0.1 0.01
1 10 100 1000 10000 0.00001 0.0001 0.001 0.01 0.1 1

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

VDS VG
90%
QG
10V

QGS QGD

10%
VGS

td(on) tr td(off) tf Q
Charge

Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform

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