AO4612

60V Complementary Enhancement Mode Field Effect Transistor

General Description Features
n-channel p-channel
The AO4612 uses advanced trench technology VDS (V) = 60V -60V
MOSFETs to provide excellent RDS(ON) and low gate ID = 4.5A (VGS=10V) -3.2A (VGS = -10V)
charge. The complementary MOSFETs may be
used in H-bridge, Inverters and other applications. RDS(ON) RDS(ON)
< 56mΩ (VGS=10V) < 105mΩ (VGS = -10V)
< 77mΩ (VGS=4.5V) < 135mΩ (VGS = -4.5V)

100% Rg tested

SOIC-8

Top View Bottom View D2 D1

S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G2 G1
G1 4 5 D1
S2 S1

SOIC-8 n-channel p-channel

Pin1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 60 -60 V
Gate-Source Voltage VGS ±20 ±20 V
Continuous Drain TA=25°C 4.5 -3.2
Current A TA=70°C ID 3.6 -2.6 A
B
Pulsed Drain Current IDM 20 -20
TA=25°C 2 2
PD W
Power Dissipation TA=70°C 1.28 1.28
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 °C
Thermal Characteristics: n-channel and p-channel
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 74 90 °C/W
Maximum Junction-to-Lead C Steady-State RθJL 35 40 °C/W

Alpha & Omega Semiconductor, Ltd.

AO4612

N Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 60 V
VDS=48V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1 2.1 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 20 A
VGS=10V, ID=4.5A 46 56
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 79
VGS=4.5V, ID=3A 64 77 mΩ
gFS Forward Transconductance VDS=5V, ID=4.5A 11 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.74 1 V
IS Maximum Body-Diode Continuous Current 3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 450 540 pF
Coss Output Capacitance VGS=0V, VDS=30V, f=1MHz 60 pF
Crss Reverse Transfer Capacitance 25 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.65 2 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 8.5 10.5 nC
Qg(4.5V) Total Gate Charge 4.3 5.5 nC
VGS=10V, VDS=30V, ID=4.5A
Qgs Gate Source Charge 1.6 nC
Qgd Gate Drain Charge 2.2 nC
tD(on) Turn-On DelayTime 4.7 7 ns
tr Turn-On Rise Time VGS=10V, VDS=30V, RL=6.7Ω, 2.3 4.5 ns
tD(off) Turn-Off DelayTime Ω
RGEN=3Ω 15.7 24 ns
tf Turn-Off Fall Time 1.9 4 ns
trr Body Diode Reverse Recovery Time IF=4.5A, dI/dt=100A/µs 27.5 35 ns
Qrr Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs 32 nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in
any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve
provides a single pulse rating. Rev3: Oct 2010

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AO4612

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

20 15
10V
5.0V VDS=5V
15
10
4.5V
ID (A)

125°C

ID(A)
10
4.0V
5
5
VGS=3.5V 25°C

0
0
0 1 2 3 4 5
2 2.5 3 3.5 4 4.5 5
VDS (Volts)
Fig 1: On-Region Characteristics VGS(Volts)
Figure 2: Transfer Characteristics

100 2
90 VGS=10V
Normalized On-Resistance

1.8 ID=4.5A
80
VGS=4.5V 1.6
Ω)

70
RDS(ON) (mΩ

VGS=4.5V
60 1.4 ID=3.0A
50
1.2
40 VGS=10V

30 1

20 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

140 1.0E+01

ID=4.5A
120 1.0E+00

125°C
1.0E-01
Ω)
RDS(ON) (mΩ

100
IS (A)

125°C
1.0E-02
80
25°C
1.0E-03
60
25°C
1.0E-04
40
1.0E-05
2 4 6 8 10
0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage VSD (Volts)
Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO4612

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

10 800
VDS=30V
ID= 4.5A
8
600

Capacitance (pF)
Ciss
VGS (Volts)

6
400
4
Coss
200
2
Crss

0 0
0 10 0 10 20 30 40 50 60
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
40
TJ(Max)=150°C
TA=25°C
10.0 RDS(ON) 10µs
30
Power (W)
ID (Amps)

1.0 20
1ms
10ms
0.1 0.1s 10
TJ(Max)=150°C
DC 1s
TA=25°C
10s
0.0 0

0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000

Pulse Width (s)
VDS (Volts) Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T
In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=62.5°C/W
Thermal Resistance

0.1 PD

Ton
Single Pulse T
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO4612

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Alpha & Omega Semiconductor, Ltd.

AO4612

P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250µA, VGS=0V -60 V
VDS=-48V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C -5
IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 -2.1 -3 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -20 A
VGS=-10V, ID=-3.2A 84 105
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 145
VGS=-4.5V, ID=-2.8A 106 135 mΩ
gFS Forward Transconductance VDS=-5V, ID=-3.2A 9 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.73 -1 V
IS Maximum Body-Diode Continuous Current -3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 930 1120 pF
Coss Output Capacitance VGS=0V, VDS=-30V, f=1MHz 85 pF
Crss Reverse Transfer Capacitance 35 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 7.2 9 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V) 16 20 nC
Qg(4.5V) Total Gate Charge (4.5V) 8 10 nC
VGS=-10V, VDS=-30V, ID=-3.2A
Qgs Gate Source Charge 2.5 nC
Qgd Gate Drain Charge 3.2 nC
tD(on) Turn-On DelayTime 8 12 ns
tr Turn-On Rise Time VGS=-10V, VDS=-30V, RL=9.4Ω, 3.8 7.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 31.5 48 ns
tf Turn-Off Fall Time 7.5 15 ns
trr Body Diode Reverse Recovery Time IF=-3.2A, dI/dt=100A/µs 27 35 ns
Qrr Body Diode Reverse Recovery Charge IF=-3.2A, dI/dt=100A/µs 32 nC

A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
The value
value in any
in aany
given
a given
application
application
depends
depends
on the
onuser's
the user's
specific
specific
boardboard
design.
design.
The current
The current
rating
rating
is based
is based
on the
ont the
≤ 10s
t ≤ thermal
10s thermal
resistance rating.
resistance
B: Repetitive
rating.
rating, pulse width limited by junction temperature.
B: Repetitive
C. The R θJA israting, pulse
the sum width
of the limitedimpedence
thermal by junctionfrom
temperature.
junction to lead R θJL and lead to ambient.
C. The static
D. R θJA ischaracteristics
the sum of theinthermal
Figuresimpedence
1 to 6,12,14from
arejunction
obtainedtousing
lead R µsand
80θJL lead duty
pulses, to ambient.
cycle 0.5% max.
D. These
E. The static
tests characteristics
are performedinwith
Figures 1 to 6,12,14
the device mounted are on
obtained
1 in 2 FR-4 80 µswith
usingboard pulses,
2oz.duty cyclein0.5%
Copper, a stillmax.
air environment with T A=25°C. The SOA
E. These
curve tests are
provides performed
a single with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The
pulse rating.
SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE

Alpha & Omega Semiconductor, Ltd.

AO4612

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

20 30

-10V VDS=-5V
-4.5V 25
15
-4.0V
20
-ID (A)

-ID(A)
10 15
-3.5V
10
5
VGS=-3.0V 125°C
5
25°C
0
0
0 1 2 3 4 5
1 1.5 2 2.5 3 3.5 4
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

130 2
Normalized On-Resistance

120 1.8 ID=-3.2A

VGS=-4.5V
VGS=-10V
110 1.6
Ω)
RDS(ON) (mΩ

100 1.4 VGS=-4.5V

ID=-2.8A
90 1.2

VGS=-10V 1
80

0.8
70
0 25 50 75 100 125 150 175
0 2 4 6 8 10
-ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

200 1.0E+01

180 ID=-3.2A 1.0E+00

125°C
160
1.0E-01
Ω)
RDS(ON) (mΩ

140 125°C
1.0E-02
-IS (A)

120
1.0E-03
100
1.0E-04
80
25°C 25°C
60 1.0E-05
2 3 4 5 6 7 8 9 10
1.0E-06
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage 0.0 0.2 0.4 0.6 0.8 1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.

AO4612

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

10 1400

1200
8 VDS=-30V
Ciss
ID=-3.2A 1000

Capacitance (pF)
-VGS (Volts)

6 800

4 600

400
2 Coss Crss
200

0 0
0 4 8 12 16 20 0 10 20 30 40 50 60
-Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
40
TJ(Max)=150°C
TA=25°C
10.0 30
RDS(ON)
-ID (Amps)

Power (W)

limited
100µs
1.0 20
1ms
10ms
0.1 0.1s 10
10s 1s
TJ(Max)=150°C DC
TA=25°C 0
0.0
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Zθ JA Normalized Transient

RθJA=62.5°C/W
Thermal Resistance

PD
0.1
Ton
T
Single Pulse

0.01
0.00001 0.0001 0.001 0.01 Pulse Width
0.1(s) 1 10 100 1000
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

AO4612

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L E AR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

Alpha & Omega Semiconductor, Ltd.