PD -2.

334

HFA15TB60
HEXFRED Ultrafast, Soft Recovery Diode
TM

Features
• Ultrafast Recovery VR = 600V
• Ultrasoft Recovery
• Very Low IRRM VF = 1.7V
• Very Low Qrr
• Guaranteed Avalanche Qrr * = 84nC
• Specified at Operating Conditions
di(rec)M/dt * = 188A/µs
Benefits
* 125°C
• Reduced RFI and EMI
• Reduced Power Loss in Diode and Switching
Transistor
• Higher Frequency Operation
• Reduced Snubbing
• Reduced Parts Count
Description
International Rectifier's HFA15TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With TO-220AC
basic ratings of 600 volts and 8 amps per Leg continuous current, the
HFA15TB60 is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product
line features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching transistor.
These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA15TB60 is ideally suited
for applications in power supplies and power conversion systems (such as
inverters), motor drives, and many other similar applications where high speed,
high efficiency is needed.

Absolute Maximum Ratings

Parameter Max. Units
VR Cathode-to-Anode Voltage 600 V
IF @ T C = 25°C Continuous Forward Current
IF @ T C = 100°C Continuous Forward Current 15 A
IFSM Single Pulse Forward Current 150
IFRM Maximum Repetitive Forward Current 60
EAS Maximum Single Pulse Avalanche Energy 28 mJ
IAR‚ Maximum Repetitive Avalanche Current 15 A
PD @ TC = 25°C Maximum Power Dissipation 74
W
PD @ TC = 100°C Maximum Power Dissipation 29
TJ Operating Junction and
-55 to +150 C
TSTG Storage Temperature Range

4/1/97
HFA15TB60
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Test Conditions
VBR Cathode Anode Breakdown Voltage 600 ––– ––– V IR = 100µA
––– 1.3 1.7 IF = 15A
VFM Max Forward Voltage ––– 1.5 2.0 V IF = 30A See Fig. 1
––– 1.2 1.6 IF = 15A, T J = 125°C
––– 1.0 10 VR = VR Rated See Fig. 2
I RM Max Reverse Leakage Current µA
––– 400 1000 TJ = 125°C, VR = 0.8 x VR RatedD Rated
CT Junction Capacitance ––– 25 50 pF VR = 200V See Fig. 3
Measured lead to lead 5mm from
LS Series Inductance ––– 8.0 ––– nH
package body

Dynamic Recovery Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter Min. Typ. Max. Units Test Conditions
trr Reverse Recovery Time ––– 19 ––– IF = 1.0A, dif /dt = 200A/µs, VR = 30V
trr1 See Fig. 5, 6 & 16 ––– 42 60 ns TJ = 25°C
trr2 ––– 74 120 TJ = 125°C I F = 15A
IRRM1 Peak Recovery Current ––– 4.0 6.0 TJ = 25°C
A
IRRM2 See Fig. 7& 8 ––– 6.5 10 TJ = 125°C V R = 200V
Qrr1 Reverse Recovery Charge ––– 84 180 TJ = 25°C
nC
Qrr2 See Fig. 9 & 10 ––– 241 600 TJ = 125°C dif/dt = 200A/µs
di(rec)M/dt1 Peak Rate of Fall of Recovery Current ––– 188 ––– TJ = 25°C
A/µs
di(rec)M/dt2 During tb See Fig. 11 & 12 ––– 160 ––– TJ = 125°C

Thermal - Mechanical Characteristics

Parameter Min. Typ. Max. Units
Tleadƒ Lead Temperature –––– –––– 300 °C
RθJC Thermal Resistance, Junction to Case –––– –––– 1.7
RθJA„ Thermal Resistance, Junction to Ambient –––– –––– 80 K/W
RθCS… Thermal Resistance, Case to Heat Sink –––– 0.5 ––––
–––– 2.0 –––– g
Wt Weight
–––– 0.07 –––– (oz)
6.0 –––– 12 Kg-cm
T Mounting Torque
5.0 –––– 10 lbf•in

 IL = 15A, L= 250µH, TC = 100°C

‚ L=100µH, duty cycle limited by max TJ
ƒ 0.063 in. from Case (1.6mm) for 10 sec
„ Typical Socket Mount
… Mounting Surface, Flat, Smooth and Greased
 HFA15TB60
100 10000
TJ = 150°C

Reverse Current - IR (µA)

1000

100
TJ = 125°C
Instantaneous Forward Current - I F (A)

10

T J = 150°C
0.1
TJ = 25°C
T = 125°C A
J 0.01
10 T = 25°C 0 200 400 600
J
Reverse Voltage - V R (V)
Fig. 2 - Typical Reverse Current vs. Reverse
Voltage
A
100
Junction Capacitance -CT (pF)

TJ = 25°C

A
1
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Forward Voltage Drop - V FM (V)

A
Fig. 1 - Maximum Forward Voltage Drop 10
vs. Instantaneous Forward Current 10 100 1000
Reverse Voltage - V R (V)
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
10
Thermal Response (Z thJC )

1 D = 0.50

0.20

0.10
PDM
0.1 0.05
t1
0.02
t2
0.01
SINGLE PULSE Notes:
(THERMAL RESPONSE)
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1, Rectangular Pulse Duration (sec)

Fig. 4 - Maximum Thermal Impedance Zthjc Characteristics

 HFA15TB60
100 25
IF = 30A VR = 200V
TJ = 125°C
IF = 15A TJ = 25°C

80 I F = 5.0A 20

I F = 30A
I F = 15A
60 15

Irr- ( A)
IF = 5.0A
trr- (nC)

40 10

20 5

VR = 200V
TJ = 125°C
TJ = 25°C
A A
0 0
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)
Fig. 5 - Typical Reverse Recovery vs. dif/dt Fig. 6 - Typical Recovery Current vs. dif/dt

800 10000
VR = 200V VR = 200V
TJ = 125°C TJ = 125°C
700 TJ = 25°C TJ = 25°C

IF = 30A
600
I F = 15A
I F = 5.0A
di (rec) M/dt- (A /µs)

500
I F = 30A
Qrr- (nC)

I F = 15A
400 1000
IF = 5.0A

300

200

100

A A
0 100
100 1000 100 1000
di f /dt - (A/µs) di f /dt - (A/µs)
Fig. 7 - Typical Stored Charge vs. di f/dt Fig. 8 - Typical di(rec)M/dt vs. dif/dt
 HFA15TB60

t rr
IF
ta tb
0
REVERSE RECOVERY CIRCUIT
4
Q rr
VR = 200V 2
I RRM 0.5 I RRM
di(rec)M/dt 5

0.01 Ω
0.75 I RRM
L = 70µH
1
D.U.T. di f /dt

1. dif/dt - Rate of change of current 4. Qrr - Area under curve defined by trr
D through zero crossing and I RRM
dif/dt t rr X IRRM
ADJUST G IRFP250 2. IRRM - Peak reverse recovery current Qrr =
2
3. trr - Reverse recovery time measured
S from zero crossing point of negative 5. di(rec)M/dt - Peak rate of change of
going IF to point where a line passing current during tb portion of trr
through 0.75 IRRM and 0.50 I RRM
extrapolated to zero current

Fig. 9 - Reverse Recovery Parameter Test Fig. 10 - Reverse Recovery Waveform and
Circuit Definitions

L = 100µH I L(PK)

HIGH-SPEED
SWITCH
DUT
FREE-WHEEL
Rg = 25 ohm
DIODE +
CURRENT DECAY
Vd = 50V TIME
MONITOR
V (AVAL)

V R(RATED)

Fig. 11 - Avalanche Test Circuit and Waveforms

HFA15TB60

Conforms to JEDEC Outline TO-220AC

Dimensions in millimeters and inches

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590
IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 4/97