Chapter3-2 transistors-BJT PDF
Chapter3-2 transistors-BJT PDF
Chapter3-2 transistors-BJT PDF
I E = IC + I B
VBE = VB − VE
VCE = VC − VE
VC > VB > VE
Base-to-emitter pn junction is forward biased
Base-to-collector pn junction is reverse biased
Base is a very thin layer of p type region Department of Mechanical Engineering
Transistor as Current Amplifier
The larger collector current IC is proportional to the base current IB according to
the relationship IC =βIB , or more precisely it is proportional to the base-emitter
voltage VBE . The smaller base current controls the larger collector current,
achieving current amplification.
The analogy to a valve is sometimes helpful. The smaller current in the base acts
as a "valve", controlling the larger current from collector to emitter. A "signal" in
the form of a variation in the base current is reproduced as a larger variation in the
collector-to-emitter current, achieving an amplification of that signal.
β is about 100
Amplification factor
Very thin
O V or 5V
Q:
Common base
The BASE connection is common to both the input signal AND the output signal with
the input signal being applied between the base and the emitter terminals. The
corresponding output signal is taken from between the base and the collector terminals
with the base terminal grounded. The input current flowing into the emitter is quite
large as its the sum of both the base current and collector current respectively
therefore, the collector current output is less than the emitter current input resulting in
a current gain for this type of circuit of "1" (unity) or less, in other words the common
base configuration "attenuates" the input signal.