Transistor. s2r PDF
Transistor. s2r PDF
Transistor. s2r PDF
TRANSISTOR
SUBSCRIBE SS2R
tarning is ant affifude
Transistor
What is BJT
The above equation shows that the when the α reaches to unity, then
the β reaches to infinity. In other words, the current gain in a common
emitter configuration is very high, and because of this reason, the
common emitter arrangement circuit is used in all the transistor
applications.
Reverse Leakage Current and
Collector Current
Parameters CB CE Configuration
Configuration
Input Dynamic Very Low (20 Ω) Low (1 KΩ)
Resistance
Output Dynamic Very High (1 MΩ) High (1 KΩ)
Resistance
Current Gain Less than unity High (100)
(0.98)
Leakage Current Very small (1µA) High(20 µA)
• NOTE: As CC configuration is the special case of CE
configuration, so we compare only CB and CE
configurations.
Why CE Configuration is widely used in
Amplifier Circuits ?
1 𝑉𝐶𝐶
𝐼𝐶 = − 𝑉𝐶𝐸 +
𝑅𝐶 𝑅𝐶
i.e. equation of a straight line.
If Collector current equation is
plotted on the transistor’s output
characteristics, we get a straight
line which is know as dc load line
with slope
1
−
𝑅𝐶
and its intercept on IC axis is
𝑉𝐶𝐶
𝑅𝐶
• The operating point of the transistor must lie on the dc load line.
• The exact position is decided by the values of base current and base-
emitter voltage.
• Applying KVL to the base circuit of the transistor, we get
𝑉𝐵𝐵 = 𝐼𝐵 𝑅𝐵 + 𝑉𝐵𝐸
𝑉𝐵𝐵 − 𝑉𝐵𝐸
𝐼𝐵 =
𝑅𝐵
• The exact operating point will lie at the intersection of base current and
the dc load line. This point is called quiescent operating point or Q point.
Q-Point
Disadvantages:
The collector current does not remain constant with variation
in temperature. Therefore the operating point is unstable.
Since, 𝐼𝐶 = 𝛽𝐼𝐵 , and the base current is already fixed, the current
IC is solely dependent on 𝛽, the Q-point will shift.
Collector to Base Bias Circuit
Input Section:
𝑉𝐶𝐶 = 𝑅𝐶 𝐼𝐶 + 𝐼𝐵 + 𝐼𝐵 𝑅𝐵 + 𝑉𝐵𝐸
𝑉𝐶𝐶 = 𝐼𝐶 𝑅𝐶 + 𝐼𝐵 𝑅𝐵 + 𝑅𝐶 + 𝑉𝐵𝐸
Output Section:
𝑉𝐶𝐸 = 𝑉𝐶𝐶 − 𝐼𝐶 + 𝐼𝐵 𝑅𝐶
There will not be much shifting in operating point due to temperature changes and replacement of
transistor with other.
𝑉𝐶𝐶 = 𝐼𝐶 𝑅𝐶 + 𝐼𝐵 𝑅𝐵 + 𝑅𝐶 + 𝑉𝐵𝐸
𝑉𝐶𝐶 = 𝛽𝐼𝐵 𝑅𝐶 + 𝐼𝐵 𝑅𝐵 + 𝑅𝐶 + 𝑉𝐵𝐸
𝑉𝐶𝐶 = (𝛽 + 1)𝐼𝐵 𝑅𝐶 + 𝐼𝐵 𝑅𝐵 + 𝑉𝐵𝐸
𝑉𝐶𝐶 − 𝑉𝐵𝐸
𝐼𝐵 =
𝑅𝐵 + (𝛽 + 1)𝑅𝐶
𝑉𝐶𝐶 − 𝑉𝐵𝐸 𝑉𝐶𝐶 − 𝑉𝐵𝐸
𝐼𝐶 = 𝛽𝐼𝐵 = 𝛽 =
𝑅𝐵 + (𝛽 + 1)𝑅𝐶 𝑹𝑩
𝜷 + 𝑅𝐶
𝑉𝐶𝐸 ≅ 𝑉𝐶𝐶 − 𝐼𝐶 𝑅𝐶
Why collector to base bias is not
used?
Advantage:
Circuit stabilizes the operating point almost against variations
in temperature and β.
Disadvantage:
As β is fixed for a given transistor, this relation can be satisfied
either by keeping RC fairly large or making RB very low.
If RC is large, a high VCC is necessary, which increases cost as well as
precautions necessary while handling.
If RB is low, the reverse bias of the collector–base region is small,
which reduces collector voltage.
Fixed bias with emitter resistor
Disadvantages:
The collector current is independent of β only if RE very large,
or RB very low.
If RE is of large value then large dc drop across RE. To obtain a
particular operating point under this condition, high VCC is necessary.
This increases cost as well as precautions necessary while handling.
If RB is low, a separate low voltage supply should be used in the base
circuit. Using two supplies of different voltages is impractical.
Voltage Divider Bias Circuit