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This document discusses heat transfer modes in a wafer thermal processing tool, including conduction through gas in a gap and radiation exchange across the gap. It provides equations to calculate the radiative and conductive heat fluxes across the gap for given temperatures and gap separations, as well as the initial rate of change of wafer temperature for each mode. Graphs show how the heat fluxes and initial temperature change rate vary with hot plate temperature for different gap separations. To heat a wafer to 900°C in less than 10 seconds requires a very high hot plate temperature and smallest possible gap separation.
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0% found this document useful (0 votes)
39 views

sm1 055

This document discusses heat transfer modes in a wafer thermal processing tool, including conduction through gas in a gap and radiation exchange across the gap. It provides equations to calculate the radiative and conductive heat fluxes across the gap for given temperatures and gap separations, as well as the initial rate of change of wafer temperature for each mode. Graphs show how the heat fluxes and initial temperature change rate vary with hot plate temperature for different gap separations. To heat a wafer to 900°C in less than 10 seconds requires a very high hot plate temperature and smallest possible gap separation.
Copyright
© © All Rights Reserved
Available Formats
Download as PDF, TXT or read online on Scribd
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PROBLEM 1.

55
KNOWN: Hot plate-type wafer thermal processing tool based upon heat transfer modes by
conduction through gas within the gap and by radiation exchange across gap.
FIND: (a) Radiative and conduction heat fluxes across gap for specified hot plate and wafer
temperatures and gap separation; initial time rate of change in wafer temperature for each mode, and
(b) heat fluxes and initial temperature-time change for gap separations of 0.2, 0.5 and 1.0 mm for hot
plate temperatures 300 < Th < 1300°C. Comment on the relative importance of the modes and the
influence of the gap distance. Under what conditions could a wafer be heated to 900°C in less than 10
seconds?
SCHEMATIC:

ASSUMPTIONS: (1) Steady-state conditions for flux calculations, (2) Diameter of hot plate and
wafer much larger than gap spacing, approximating plane, infinite planes, (3) One-dimensional
conduction through gas, (4) Hot plate and wafer are blackbodies, (5) Negligible heat losses from wafer
backside, and (6) Wafer temperature is uniform at the onset of heating.
3
PROPERTIES: Wafer: ρ = 2700 kg/m , c = 875 J/kg⋅K; Gas in gap: k = 0.0436 W/m⋅K.

ANALYSIS: (a) The radiative heat flux between the hot plate and wafer for Th = 600°C and Tw =
20° C follows from the rate equation,

(
q′′rad = σ Th4 − Tw
4
)
= 5.67 × 10−8 W / m 2 ⋅ K 4 (( 600 + 273) 4
− ( 20 + 273)
4
)K 4
= 32.5 kW / m 2 <
The conduction heat flux through the gas in the gap with L = 0.2 mm follows from Fourier’s law,
T − Tw
q′′cond = k h = 0.0436 W / m ⋅ K
( 600 − 20 ) K = 126 kW / m2 <
L 0.0002 m
The initial time rate of change of the wafer can be determined from an energy balance on the wafer at
the instant of time the heating process begins,
⎛ dT ⎞
E& ′′in − E& ′′out = E& ′′st E& ′′st = ρ c d ⎜ w ⎟
⎝ dt ⎠i
where E& ′′out = 0 and E& ′′in = q ′′rad or q ′′cond . Substituting numerical values, find

dTw ⎞ q′′rad 32.5 × 103 W / m 2


⎟ = = = 17.6 K / s <
dt ⎠i,rad ρ cd 2700 kg / m3 × 875 J / kg ⋅ K × 0.00078 m

dTw ⎞ q′′
⎟ = cond = 68.6 K / s <
dt ⎠i,cond ρ cd

Continued …..
PROBLEM 1.55 (Cont.)

(b) Using the foregoing equations, the heat fluxes and initial rate of temperature change for each mode
can be calculated for selected gap separations L and range of hot plate temperatures Th with Tw =
20°C.

400 200

Initial rate of change, dTw/dt (K.s^-1)


300 150
Heat flux (kW/m^2)

200 100

50
100

0
0
300 500 700 900 1100 1300
300 500 700 900 1100 1300
Hot plate temperature, Th (C)
Hot plate temperature, Th (C)
q''rad
q''rad q''cond, L = 1.0 mm
q''cond, L = 1.0 mm q''cond, L = 0.5 mm
q''cond, L = 0.5 mm q''cond, L = 0.2 mm
q''cond, L = 0.2 mm

In the left-hand graph, the conduction heat flux increases linearly with Th and inversely with L as
expected. The radiative heat flux is independent of L and highly non-linear with Th, but does not
approach that for the highest conduction heat rate until Th approaches 1200°C.

The general trends for the initial temperature-time change, (dTw/dt)i, follow those for the heat fluxes.
To reach 900°C in 10 s requires an average temperature-time change rate of 90 K/s. Recognizing that
(dTw/dt) will decrease with increasing Tw, this rate could be met only with a very high Th and the
smallest L.

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