AON6314

30V N-Channel MOSFET

General Description Product Summary

• Trench Power MOSFET technology VDS 30V

• Low RDS(ON) ID (at VGS=10V) 85A
• Low Gate Charge RDS(ON) (at VGS=10V) < 2.8mΩ
• High Current Capability
RDS(ON) (at VGS=4.5V) < 3.5mΩ
• RoHS and Halogen-Free Compliant

100% UIS Tested

Applications 100% Rg Tested

• DC/DC Converters in Computing

• Isolated DC/DC Converters in Telecom and Industrial
• See Note I

DFN5X6 D
Top View Bottom View Top View

1 8

2 7

3 6

4 5 G
PIN1
S
PIN1

Orderable Part Number Package Type Form Minimum Order Quantity

AON6314 DFN 5x6 Tape & Reel 3000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TC=25°C 85
ID
Current G TC=100°C 53 A
C
Pulsed Drain Current IDM 190
Continuous Drain TA=25°C 37
IDSM A
Current TA=70°C 30
Avalanche Current C IAS 70 A
C
Avalanche energy L=0.01mH EAS 25 mJ
VDS Spike 10µs VSPIKE 36 V
TC=25°C 32.5
PD W
Power Dissipation B TC=100°C 13
TA=25°C 6.2
PDSM W
Power Dissipation A TA=70°C 4
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 15 20 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 40 50 °C/W
Maximum Junction-to-Case Steady-State RθJC 2.8 3.8 °C/W

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Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS=±12V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.1 1.5 2.0 V
VGS=10V, ID=20A 2.3 2.8
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 3.4 4.1
VGS=4.5V, ID=20A 2.8 3.5 mΩ
gFS Forward Transconductance VDS=5V, ID=20A 165 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.68 1 V
IS Maximum Body-Diode Continuous Current 40 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1900 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 400 pF
Crss Reverse Transfer Capacitance 60 pF
Rg Gate resistance f=1MHz 0.9 1.8 2.7 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 29 45 nC
Qg(4.5V) Total Gate Charge 13 20 nC
VGS=10V, VDS=15V, ID=20A
Qgs Gate Source Charge 4.5 nC
Qgd Gate Drain Charge 3.6 nC
tD(on) Turn-On DelayTime 8 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=0.75Ω, 3 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 31 ns
tf Turn-Off Fall Time 4 ns
trr Body Diode Reverse Recovery Time IF=20A, di/dt=500A/µs 12 ns
Qrr Body Diode Reverse Recovery Charge IF=20A, di/dt=500A/µs 21.5 nC

A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. For application requiring slow >1ms turn-on/turn-off, please consult AOS FAE for proper product selection.

APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 100
4.5V 3V VDS=5V

80 80

60 60
10V
ID (A)

ID (A)
40 2.5V 40 125°C 25°C

20 20

VGS=2V
0 0
0 1 2 3 4 5 1 2 3 4 5

VDS (Volts) VGS (Volts)

Figure 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

5 1.8

Normalized On-Resistance
4 1.6 VGS=10V
ID=20A
VGS=4.5V
RDS(ON) (mΩ)

3 1.4

2 1.2

VGS=10V VGS=4.5V
1 1 ID=20A

0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175

ID (A) Temperature (°C)

Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)

8 1.0E+01
ID=20A
1.0E+00
6
1.0E-01
RDS(ON) (mΩ)

125°C
125°C
IS (A)

4 1.0E-02

1.0E-03 25°C
2
25°C 1.0E-04

0 1.0E-05
2.000E+00 4.000E+00 6.000E+00 8.000E+00 1.000E+01 0.0 0.2 0.4 0.6 0.8 1.0

VGS (Volts) VSD (Volts)

Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
(Note E) (Note E)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2500
VDS=15V
ID=20A Ciss
8 2000

Capacitance (pF)
VGS (Volts)

6 1500

4 1000

Coss
2 500
Crss

0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30

Qg (nC) VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 500
TJ(Max)=150°C
TC=25°C
100.0 RDS(ON) 10µs 400
10µs
limited
Power (W)

100µs 300
ID (Amps)

10.0
1ms
10ms 200
1.0
DC

0.1 100
TJ(Max)=150°C
TC=25°C
0
0.0
0.0001 0.001 0.01 0.1 1 10 100
0.01 0.1 1 10 100
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
VGS> or equal to 4.5V
Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)

10
D=Ton/T In descending order
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

RθJC=3.8°C/W
1

0.1 Single Pulse PDM

Ton
T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100

Pulse Width (s)

Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

40 100

80
30
Power Dissipation (W)

Current rating ID (A)

60
20
40

10
20

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TCASE (°C) TCASE (°C)

Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

10000
TA=25°C

1000
Power (W)

100

10

1
1E-05 0.001 0.1 10 1000

Pulse Width (s)

Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H)

10
ZθJA Normalized Transient

D=Ton/T In descending order

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Thermal Resistance

TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=50°C/W

0.1

PDM
0.01 Single Pulse

Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)

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 AON6314

Figure
GateA: Charge
Gate Charge Test Circuit
Test Circuit & Waveforms
& Waveform
Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Figure B:Resistive
ResistiveSwitching
Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs td(on) tr td(off) tf

ton toff

Figure C: UnclampedInductive
Unclamped InductiveSwitching
Switching (UIS) Test
TestCircuit
Circuit&&Waveforms
Waveforms
L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Figure
DiodeD: Recovery
Diode Recovery Test Circuit
Test Circuit & Waveforms
& Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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