General Description Product Summary: 30V N-Channel MOSFET
General Description Product Summary: 30V N-Channel MOSFET
General Description Product Summary: 30V N-Channel MOSFET
DFN5X6 D
Top View Bottom View Top View
1 8
2 7
3 6
4 5 G
PIN1
S
PIN1
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 15 20 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 40 50 °C/W
Maximum Junction-to-Case Steady-State RθJC 2.8 3.8 °C/W
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Single pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
I. For application requiring slow >1ms turn-on/turn-off, please consult AOS FAE for proper product selection.
APPLICATIONS OR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT
ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE
PRODUCT DESIGN,FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
100 100
4.5V 3V VDS=5V
80 80
60 60
10V
ID (A)
ID (A)
40 2.5V 40 125°C 25°C
20 20
VGS=2V
0 0
0 1 2 3 4 5 1 2 3 4 5
5 1.8
Normalized On-Resistance
4 1.6 VGS=10V
ID=20A
VGS=4.5V
RDS(ON) (mΩ)
3 1.4
2 1.2
VGS=10V VGS=4.5V
1 1 ID=20A
0 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
8 1.0E+01
ID=20A
1.0E+00
6
1.0E-01
RDS(ON) (mΩ)
125°C
125°C
IS (A)
4 1.0E-02
1.0E-03 25°C
2
25°C 1.0E-04
0 1.0E-05
2.000E+00 4.000E+00 6.000E+00 8.000E+00 1.000E+01 0.0 0.2 0.4 0.6 0.8 1.0
10 2500
VDS=15V
ID=20A Ciss
8 2000
Capacitance (pF)
VGS (Volts)
6 1500
4 1000
Coss
2 500
Crss
0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
1000.0 500
TJ(Max)=150°C
TC=25°C
100.0 RDS(ON) 10µs 400
10µs
limited
Power (W)
100µs 300
ID (Amps)
10.0
1ms
10ms 200
1.0
DC
0.1 100
TJ(Max)=150°C
TC=25°C
0
0.0
0.0001 0.001 0.01 0.1 1 10 100
0.01 0.1 1 10 100
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
VGS> or equal to 4.5V
Case (Note F)
Figure 9: Maximum Forward Biased
Safe Operating Area (Note F)
10
D=Ton/T In descending order
ZθJC Normalized Transient
RθJC=3.8°C/W
1
Ton
T
0.01
1E-05 0.0001 0.001 0.01 0.1 1 10 100
40 100
80
30
Power Dissipation (W)
10
20
0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150
10000
TA=25°C
1000
Power (W)
100
10
1
1E-05 0.001 0.1 10 1000
10
ZθJA Normalized Transient
TJ,PK=TA+PDM.ZθJA.RθJA
1 RθJA=50°C/W
0.1
PDM
0.01 Single Pulse
Ton
T
0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance (Note H)
Figure
GateA: Charge
Gate Charge Test Circuit
Test Circuit & Waveforms
& Waveform
Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC
DUT -
Vgs
Ig
Charge
Figure B:Resistive
ResistiveSwitching
Switching Test
Test Circuit
Circuit&&Waveforms
Waveforms
RL
Vds
Vds
90%
DUT
+ Vdd
Vgs VDC
Rg - 10%
ton toff
Figure C: UnclampedInductive
Unclamped InductiveSwitching
Switching (UIS) Test
TestCircuit
Circuit&&Waveforms
Waveforms
L 2
Vds EAR= 1/2 LIAR BVDSS
Id Vds
Vgs + Vdd I AR
Vgs VDC
Rg - Id
DUT
Vgs Vgs
Figure
DiodeD: Recovery
Diode Recovery Test Circuit
Test Circuit & Waveforms
& Waveforms
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds