FNA41560T2 Motion SPM 45 ® Series

August 2017

FNA41560T2
Motion SPM® 45 Series
Features General Description
• UL Certified No. E209204 (UL1557) FNA41560T2 is a Motion SPM ® 45 module providing a
fully-featured, high-performance inverter output stage
• 600 V - 15 A 3-Phase IGBT Inverter with Integral Gate
for AC Induction, BLDC, and PMSM motors. These mod-
Drivers and Protection
ules integrate optimized gate drive of the built-in IGBTs
• Low Thermal Resistance Using Ceramic Substrate to minimize EMI and losses, while also providing multi-
• Low-Loss, Short-Circuit Rated IGBTs ple on-module protection features including under-volt-
age lockouts, over-current shutdown, thermal monitoring
• Built-In Bootstrap Diodes and Dedicated Vs Pins Sim- of drive IC, and fault reporting. The built-in, high-speed
plify PCB Layout HVIC requires only a single supply voltage and trans-
• Built-In NTC Thermistor for Temperature Monitoring lates the incoming logic-level gate inputs to the high-volt-
age, high-current drive signals required to properly drive
• Separate Open-Emitter Pins from Low-Side IGBTs for the module's internal IGBTs. Separate negative IGBT
Three-Phase Current Sensing terminals are available for each phase to support the
• Single-Grounded Power Supply widest variety of control algorithms.

• Isolation Rating: 2000 Vrms / min.

Applications
• Motion Control - Home Appliance / Industrial Motor

Related Resources
• AN-9084 - Smart Power Module, Motion SPM® 45 H
V3 Series User’s Guilde
• AN-9072 - Smart Power Module Motion SPM® in
SPM45H Thermal Performance Information
• AN-9071 - Smart Power Module Motion SPM® in
SPM45H Mounting Guidance
• AN-9760 - PCB Design Guidance for SPM®

Figure 1. 3D Package Drawing

(Click to Activate 3D Content)

Package Marking and Ordering Information

Device Device Marking Package Packing Type Quantity
FNA41560T2 FNA41560T2 SPMAB-C26 Rail 12

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 FNA41560T2 Motion SPM 45 ® Series
Integrated Power Functions
• 600 V - 15 A IGBT inverter for three-phase DC / AC power conversion (please refer to Figure 3)

Integrated Drive, Protection, and System Control Functions

• For inverter high-side IGBTs: gate drive circuit, high-voltage isolated high-speed level shifting
control circuit Under-Voltage Lock-Out Protection (UVLO)
Note: Available bootstrap circuit example is given in Figures 15.
• For inverter low-side IGBTs: gate drive circuit, Short-Circuit Protection (SCP)
control supply circuit Under-Voltage Lock-Out Protection (UVLO)
• Fault signaling: corresponding to UVLO (low-side supply) and SC faults
• Input interface: active-HIGH interface, works with 3.3 / 5 V logic, Schmitt-trigger input

Pin Configuration

Figure 2. Top View

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 FNA41560T2 Motion SPM 45 ® Series
Pin Descriptions
Pin Number Pin Name Pin Description
1 V TH Thermistor Bias Voltage
2 RTH Series Resistor for the Use of Thermistor (Temperature Detection)
3 P Positive DC-Link Input
4 U Output for U-Phase
5 V Output for V-Phase
6 W Output for W-Phase
7 NU Negative DC-Link Input for U-Phase
8 NV Negative DC-Link Input for V-Phase
9 NW Negative DC-Link Input for W-Phase
10 CSC Shut Down Input for Short-circuit Current Detection Input
11 VFO Fault Output
12 IN(WL) Signal Input for Low-Side W-Phase
13 IN (VL) Signal Input for Low-Side V-Phase
14 IN(UL) Signal Input for Low-Side U-Phase
15 COM Common Supply Ground
16 VDD(L) Low-Side Common Bias Voltage for IC and IGBTs Driving
17 V DD(H) High-Side Common Bias Voltage for IC and IGBTs Driving
18 IN(WH) Signal Input for High-Side W-Phase
19 IN (VH) Signal Input for High-Side V-Phase
20 IN(UH) Signal Input for High-Side U-Phase
21 VS(W) High-Side Bias Voltage Ground for W-Phase IGBT Driving
22 VB(W) High-Side Bias Voltage for W-Phase IGBT Driving
23 V S(V) High-Side Bias Voltage Ground for V-Phase IGBT Driving
24 V B(V) High-Side Bias Voltage for V-Phase IGBT Driving
25 VS(U) High-Side Bias Voltage Ground for U-Phase IGBT Driving
26 VB(U) High-Side Bias Voltage for U-Phase IGBT Driving

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 FNA41560T2 Motion SPM 45 ® Series
Internal Equivalent Circuit and Input/Output Pins

VTH (1)

Thermistor RTH (2)

P (3)
(26) VB(U)
UVB
(25) VS(U)
UVS OUT(UH)
(24) VB(V)
VVB UVS U(4)
(23) VS(V)
VVS
(22) VB(W)
WVB
(21) VS(W)
WVS
OUT(VH)
(20) IN(UH)
IN(UH) VVS V (5)
(19) IN(VH)
IN(VH)
(18) IN(WH)
IN(WH)
(17) VDD(H)
VDD OUT(WH)
COM WVS W(6)

(16) VDD(L)
VDD
OUT(UL)
(15) COM
COM
NU (7)
(14) IN(UL)
IN(UL)
(13) IN(VL)
IN(VL)
(12) IN(WL) OUT(VL)
IN(WL)
(11) VFO NV (8)
VFO

(10) CSC
CSC
OUT(WL)

NW (9)

Figure 3. Internal Block Diagram

Note:
1. Inverter high-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT.
2. Inverter low-side is composed of three IGBTs, freewheeling diodes, and one control IC for each IGBT. It has gate drive and protection functions.
3. Inverter power side is composed of four inverter DC-link input terminals and three inverter output terminals.

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 FNA41560T2 Motion SPM 45 ® Series
Absolute Maximum Ratings (TJ = 25°C, unless otherwise specified.)

Inverter Part
Symbol Parameter Conditions Rating Unit
VPN Supply Voltage Applied between P - NU , NV, N W 450 V
V PN(Surge) Supply Voltage (Surge) Applied between P - NU , NV, N W 500 V
VCES Collector - Emitter Voltage 600 V
± IC Each IGBT Collector Current TC = 25°C, TJ ＜ 150°C 15 A
± ICP Each IGBT Collector Current (Peak) TC = 25°C, TJ ＜ 150°C, Under 1 ms Pulse 30 A
Width (Note 4)
PC Collector Dissipation TC = 25°C per One Chip (Note 4) 38 W
TJ Operating Junction Temperature - 40 ~ 150 °C

Control Part
Symbol Parameter Conditions Rating Unit
VDD Control Supply Voltage Applied between V DD(H), VDD(L) - COM 20 V
VBS High - Side Control Bias Voltage Applied between V B(U) - VS(U), VB(V) - VS(V), 20 V
VB(W) - V S(W)
VIN Input Signal Voltage Applied between IN(UH), IN(VH), IN(WH), -0.3 ~ V DD + 0.3 V
IN(UL), IN(VL), IN(WL) - COM
VFO Fault Output Supply Voltage Applied between V FO - COM -0.3 ~ V DD + 0.3 V
IFO Fault Output Current Sink Current at V FO pin 1 mA
VSC Current-Sensing Input Voltage Applied between C SC - COM -0.3 ~ VDD + 0.3 V

Bootstrap Diode Part

Symbol Parameter Conditions Rating Unit
VRRM Maximum Repetitive Reverse Voltage 600 V
IF Forward Current TC = 25°C, TJ ＜ 150°C 0.5 A
IFP Forward Current (Peak) TC = 25°C, TJ ＜ 150°C, Under 1 ms Pulse 2.0 A
Width (Note 4)
TJ Operating Junction Temperature -40 ~ 150 °C

Total System
Symbol Parameter Conditions Rating Unit
VPN(PROT) Self-Protection Supply Voltage Limit VDD = VBS = 13.5 ~ 16.5 V 400 V
(Short-Circuit Protection Capability) TJ = 150°C, Non-Repetitive, < 2 ms
TC Module Case Operation Temperature See Figure 2 -40 ~ 125 °C
TSTG Storage Temperature -40 ~ 125 °C
V ISO Isolation Voltage 60 Hz, Sinusoidal, AC 1 Minute, Connect 2000 V rms
Pins to Heat Sink Plate

Thermal Resistance
Symbol Parameter Conditions Min. Typ. Max. Unit
Rth(j-c)Q Junction to Case Thermal Resistance Inverter IGBT Part (per 1 / 6 module) - - 3.20 °C / W
Rth(j-c)F (Note 5) Inverter FWDi Part (per 1 / 6 module) - - 4.00 °C / W

Note:
4. These values had been made an acquisition by the calculation considered to design factor.
5. For the measurement point of case temperature (TC), please refer to Figure 2.

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 FNA41560T2 Motion SPM 45 ® Series
Electrical Characteristics (TJ = 25°C, unless otherwise specified.)
Inverter Part
Symbol Parameter Conditions Min. Typ. Max. Unit
VCE(SAT) Collector - Emitter Saturation VDD = VBS = 15 V IC = 15 A, TJ = 25°C - 1.60 2.20 V
Voltage VIN = 5 V
VF FWDi Forward Voltage VIN = 0 V IF = 15 A, TJ = 25°C - 2.00 2.60 V
HS tON Switching Times VPN = 300 V, VDD = VBS = 15 V, IC = 15 A 0.40 0.80 1.30 ms
TJ = 25°C
tC(ON) - 0.20 0.50 ms
VIN = 0 V « 5 V, Inductive Load
tOFF (Note 6) - 0.85 1.35 ms
tC(OFF) - 0.25 0.55 ms
trr - 0.10 - ms
LS tON VPN = 300 V, VDD = VBS = 15 V, IC = 15 A 0.45 0.85 1.35 ms
tC(ON) TJ = 25°C - 0.25 0.55 ms
VIN = 0 V « 5 V, Inductive Load
tOFF (Note 6) - 0.90 1.40 ms
tC(OFF) - 0.25 0.55 ms
trr - 0.15 - ms
ICES Collector - Emitter Leakage VCE = VCES - - 1 mA
Current
Note:
6. tON and tOFF include the propagation delay time of the internal drive IC. tC(ON) and tC(OFF) are the switching time of IGBT itself under the given gate driving condition internally.
For the detailed information, please see Figure 4.

100% IC 100% IC

t rr

V CE IC IC V CE

V IN V IN

t ON tO FF
tC(O N) t C(OFF)
10% IC
V IN(ON ) 90% IC 10% V C E V IN (OF F) 10% V C E 10% I C

(a) turn-on (b) turn-off

Figure 4. Switching Time Definition

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 FNA41560T2 Motion SPM 45 ® Series
Inductive Load, VPN = 300V, VDD=15V, TJ=25℃ Inductive Load, VPN = 300V, VDD=15V, TJ=150℃

1400 IGBT Turn-on, Eon 1400 IGBT Turn-on, Eon

IGBT Turn-off, Eoff IGBT Turn-off, Eoff
1200
FRD Turn-off, Erec FRD Turn-off, Erec
1200
SWITCHING LOSS ESW [uJ]

SWITCHING LOSS ESW [uJ]

1000 1000

800 800

600 600

400 400

200 200

0 0
0 5 10 15 0 5 10 15
COLLECTOR CURRENT, IC [AMPERES] COLLECTOR CURRENT, IC [AMPERES]

Figure 5. Switching Loss Characteristics (Typical)

Control Part
Symbol Parameter Conditions Min. Typ. Max. Unit
IQDDH Quiescent V DD Supply VDD(H) = 15 V, IN(UH,VH,WH) = 0 V V DD(H) - COM - - 0.10 mA
IQDDL Current VDD(L) = 15 V, IN(UL,VL, WL) = 0 V V DD(L) - COM - - 2.65 mA
IPDDH Operating VDD Supply VDD(H) = 15 V, fPWM = 20 kHz, duty V DD(H) - COM - - 0.15 mA
Current = 50%, Applied to One PWM Sig-
nal Input for High-Side
IPDDL VDD(L) = 15 V, fPWM = 20 kHz, duty V DD(L) - COM - - 4.00 mA
= 50%, Applied to One PWM Sig-
nal Input for Low-Side
IQBS Quiescent V BS Supply VBS = 15 V, IN(UH, VH, WH) = 0 V VB(U) - VS(U), VB(V) - - - 0.30 mA
Current V S(V), VB(W) - VS(W)
IPBS Operating VBS Supply VDD = V BS = 15 V, fPWM = 20 kHz, V B(U) - VS(U), VB(V) - - - 2.00 mA
Current Duty = 50%, Applied to One PWM V S(V), VB(W) - VS(W)
Signal Input for High-Side
VFOH Fault Output Voltage VSC = 0 V, VFO Circuit: 4.7 kW to 5 V Pull-up 4.5 - - V
VFOL VSC = 1 V, VFO Circuit: 4.7 kW to 5 V Pull-up - - 0.5 V
VSC(ref) Short Circuit Trip Level VDD = 15 V (Note 7) CSC - COM 0.45 0.50 0.55 V
UVDDD Detection level 10.5 - 13.0 V
Supply Circuit
UVDDR Reset level 11.0 - 13.5 V
Under-Voltage
UV BSD Protection Detection level 10.0 - 12.5 V
UV BSR Reset level 10.5 - 13.0 V
tFOD Fault-Out Pulse Width 30 - - ms
VIN(ON) ON Threshold Voltage Applied between IN(UH, VH, WH) - COM, - - 2.6 V
IN(UL, VL, WL) - COM
VIN(OFF) OFF Threshold Voltage 0.8 - - V
RTH Resistance of @TTH = 25°C, (Note 8) - 47 - kW
Thermistor @TTH = 100°C - 2.9 - kW
Note:
7. Short-circuit current protection is functioning only at the low-sides.
8. TTH is the temperature of thermistor itselt. To know case temperature (TC), please make the experiment considering your application.

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 FNA41560T2 Motion SPM 45 ® Series
R-T Curve
600

550
R-T Curve in 50℃ ~ 125℃
20
500

450 16

Resistance[k]
400
Resistance[k]

12
350
8
300

250 4

200 0
50 60 70 80 90 100 110 120
150 Temperature [℃ ]
100

50

0
-20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120
Temperature TTH[℃ ]

Figure. 6. R-T Curve of The Built-In Thermistor

Bootstrap Diode Part

Symbol Parameter Conditions Min. Typ. Max. Unit
VF Forward Voltage IF = 0.1 A, TC = 25°C - 2.5 - V
trr Reverse-Recovery Time IF = 0.1 A, dIF / dt = 50 A / ms, TJ = 25°C - 80 - ns

Built-In Bootstrap Diode VF-IF Characteristic

1.0

0.9

0.8

0.7

0.6
IF [A]

0.5

0.4

0.3

0.2

0.1
o
TC=25 C
0.0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

VF [V]

Figure 7. Built-In Bootstrap Diode Characteristic

Note:
9. Built-in bootstrap diode includes around 15 Ω resistance characteristic.

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 FNA41560T2 Motion SPM 45 ® Series
Recommended Operating Conditions
Symbol Parameter Conditions Min. Typ. Max. Unit
V PN Supply Voltage Applied between P - NU , NV, N W - 300 400 V
VDD Control Supply Voltage Applied between V DD(H), VDD(L) - COM 13.5 15.0 16.5 V
VBS High-Side Bias Voltage Applied between VB(U) - VS(U), V B(V) - VS(V), VB(W) - 13.0 15.0 18.5 V
VS(W)
dVDD / dt, Control Supply Variation -1 - 1 V / ms
dVBS / dt
tdead Blanking Time for For each input signal 1 - - ms
Preventing Arm-Short
fPWM PWM Input Signal -40°C £ TC £ 125°C, -40°C £ TJ £ 150°C - - 20 kHz
V SEN Voltage for Current Applied between N U, NV, N W - COM -4 4 V
Sensing (Including Surge-Voltage)
PWIN(ON) Minimum Input Pulse VDD = VBS = 15 V, IC £ 15 A, Wiring Inductance 0.5 - - ms
Width between NU, V, W and DC Link N < 10nH (Note 10)
P WIN(OFF) 0.5 - -
PWIN(ON) Minimum Input Pulse VDD = VBS = 15 V, IC £ 30 A, Wiring Inductance 1.2 - - ms
P WIN(OFF) Width between NU, V, W and DC Link N < 10nH (Note 10) 1.2 - -
TJ Junction Temperature - 40 - 150 °C

Note:
10. This product might not make response if input pulse width is less than the recommanded value.

15
Allowable Output Current, IOrms [Arms]

12 fSW = 5 kHz

VDC = 300 V, VDD = VBS = 15 V

fSW = 15 kHz
3 Tj = 150℃ , TC = 125℃
M.I. = 0.9, P.F. = 0.8
Sinusoidal PWM
0
0 20 40 60 80 100 120 140

Case Temperature, TC [℃ ]

Figure 8. Allowable Maximum Output Current

Note:
11. This allowable output current value is the reference data for the safe operation of this product. This may be different from the actual application and operating condition.

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 FNA41560T2 Motion SPM 45 ® Series
Mechanical Characteristics and Ratings
Parameter Conditions Min. Typ. Max. Unit
Device Flatness See Figure 9 0 - + 120 mm
Mounting Torque Mounting Screw: M3 Recommended 0.7 N • m 0.6 0.7 0.8 N•m
See Figure 10 Recommended 7.1 kg • cm 6.2 7.1 8.1 kg • cm
Weight - 11.00 - g

Figure 9. Flatness Measurement Position

Pre - Screwing : 1→2

Final Screwing : 2→1 2

Figure 10. Mounting Screws Torque Order

Note:
12. Do not make over torque when mounting screws. Much mounting torque may cause ceramic cracks, as well as bolts and Al heat-sink destruction.
13. Avoid one-sided tightening stress. Figure 10 shows the recommended torque order for mounting screws. Uneven mounting can cause the ceramic substrate of package to be
damaged. The pre-screwing torque is set to 20 ~ 30% of maximum torque rating.

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 FNA41560T2 Motion SPM 45 ® Series
Time Charts of Protective Function

Input Signal

Protection RESET SET RESET

Circuit State
UVDDR
a1 a6
Control UVDDD
a3
Supply Voltage
a2
a4 a7

Output Current

a5
Fault Output Signal

Figure 11. Under-Voltage Protection (Low-Side)

a1 : Control supply voltage rises: After the voltage rises UVDDR, the circuits start to operate when next input is applied.
a2 : Normal operation: IGBT ON and carrying current.
a3 : Under voltage detection (UVDDD).
a4 : IGBT OFF in spite of control input condition.
a5 : Fault output operation starts with a fixed pulse width.
a6 : Under voltage reset (UVDDR ).
a7 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.

Input Signal

Protection RESET SET RESET

Circuit State
UVBSR
b1 b5
Control UVBSD
b3
Supply Voltage b6
b2
b4

Output Current

High-level (no fault output)

Fault Output Signal

Figure 12. Under-Voltage Protection (High-Side)

b1 : Control supply voltage rises: After the voltage reaches UVBSR, the circuits start to operate when next input is applied.
b2 : Normal operation: IGBT ON and carrying current.
b3 : Under voltage detection (UVBSD).
b4 : IGBT OFF in spite of control input condition, but there is no fault output signal.
b5 : Under voltage reset (UVBSR ).
b6 : Normal operation: IGBT ON and carrying current by triggering next signal from LOW to HIGH.

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 FNA41560T2 Motion SPM 45 ® Series
Lower Arms c6 c7
Control Input
Protection
Circuit State SET RESET

Internal IGBT c4
Gate - Emitter Voltage c3
c2
SC

c1

Output Current c8

SC Reference Voltage
Sensing Voltage
of Shunt Resistance

CR Circuit Time
Constant Delay
Fault Output Signal c5

Figure 13. Short-Circuit Protection (Low-Side Operation Only)

(with the external sense resistance and RC filter connection)
c1 : Normal operation: IGBT ON and carrying current.
c2 : Short circuit current detection (SC trigger).
c3 : All low-side IGBT’s gate are hard interrupted.
c4 : All low-side IGBTs turn OFF.
c5 : Fault output operation starts with a fixed pulse width.
c6 : Input HIGH: IGBT ON state, but during the active period of fault output the IGBT doesn’t turn ON.
c7 : Fault output operation finishes, but IGBT doesn’t turn on until triggering next signal from LOW to HIGH.
c8 : Normal operation: IGBT ON and carrying current.

Input/Output Interface Circuit

+5 V (for MCU or Control power)

R PF = 10 kΩ SPM
IN (UH) , IN (VH) , IN(WH)

IN (UL) , IN (VL) , IN(W L)

MCU VFO

COM

Figure 14. Recommended MCU I/O Interface Circuit

Note:
14. RC coupling at each input might change depending on the PWM control scheme used in the application and the wiring impedance of the application’s printed circuit board.
The input signal section of the Motion SPM 45 product integrates 5 kW(typ.) pull-down resistor. Therefore, when using an external filtering resistor, please pay attention to the
signal voltage drop at input terminal.

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 FNA41560T2 Motion SPM 45 ® Series
(26) VB(U)
HVIC
VB(U) P (3)

CBS CBSC (25) VS(U)

VS(U)
RS OUT(UH)
(20) IN(UH)
Gating UH IN(UH) U (4)
VS(U)
(24) VB(V)
VB(V)
CBS CBSC (23) VS(V)
VS(V)
RS (19) IN(VH)
Gating VH IN(VH) OUT(VH)

VS(V) V (5)
(22) VB(W)
VB(W) M
CBS CBSC (21) VS(W)
VS(W)
RS

M Gating WH
+15 V
(18) IN(WH)

(17) VDD(H)
IN(WH)
VDD
OUT(WH)
CDCS VDC

C CPS CPS CPS CSP15 CSPC15 (15) COM

COM
VS(W) W (6)

U +5 V
(16) VDD(L)
LVIC
VDD
OUT(UL)
RPF
RSU
NU (7)
RS
CSPC05 CSP05
(11) VFO
Fault VFO
CPF
CBPF
RS
OUT(VL)
(14) IN(UL)
Gating UL IN(UL) RSV
RS NV (8)
(13) IN(VL)
Gating VL IN(VL)
RS (12) IN(WL)
Gating WL IN(WL)
CSC
COM OUT(WL)
CPS CPS CPS (10) CSC RSW
CSC NW (9)
RF
(1) VTH

RTH (2) RTH

THERMISTOR

U-Phase Current
Input Signal for
V-Phase Current
Short-Circuit Protection
Temp. Monitoring W-Phase Current

Figure 15. Typical Application Circuit

Note:
15. To avoid malfunction, the wiring of each input should be as short as possible (less than 2 - 3 cm).
16. VFO output is open-drain type. This signal line should be pulled up to the positive side of the MCU or control power supply with a resistor that makes IFO up to 1 mA.
17. C SP15 of around seven times larger than bootstrap capacitor CBS is recommended.
18. Input signal is active-HIGH type. There is a 5 kW resistor inside the IC to pull down each input signal line to GND. RC coupling circuits is recommanded for the prevention of
input signal oscillation. RSCPS time constant should be selected in the range 50 ~ 150 ns (recommended RS = 100 Ω , CPS = 1 nF).
19. To prevent errors of the protection function, the wiring around RF and CSC should be as short as possible.

20. In the short-circuit protection circuit, please select the RF CSC time constant in the range 1.5 ~ 2 ms. Do enough evaluaiton on the real system because short-circuit protection
time may vary wiring pattern layout and value of the RF CSC time constant.
21. The connection between control GND line and power GND line which includes the NU, N V, NW must be connected to only one point. Please do not connect the control GND
to the power GND by the broad pattern. Also, the wiring distance between control GND and power GND should be as short as possible.
22. Each capacitor should be mounted as close to the pins of the Motion SPM 45 product as possible.
23. To prevent surge destruction, the wiring between the smoothing capacitor and the P & GND pins should be as short as possible. The use of a high-frequency non-inductive
capacitor of around 0.1 ~ 0.22 mF between the P and GND pins is recommended.
24. Relays are used in almost every systems of electrical equipment in home appliances. In these cases, there should be sufficient distance between the MCU and the relays.
25. The zener diode or transient voltage suppressor should be adopted for the protection of ICs from the surge destruction between each pair of control supply terminals
(recommanded zener diode is 22 V / 1 W, which has the lower zener impedance characteristic than about 15 Ω ).
26. Please choose the electrolytic capacitor with good temperature characteristic in CBS. Also, choose 0.1 ~ 0.2 mF R-category ceramic capacitors with good temperature and
frequency characteristics in C BSC.

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 FNA41560T2 Motion SPM 45 ® Series
Detailed Package Outline Drawings (FNA41560T2

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