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    BR1000 - BR1010: Silicon Bridge Rectifiers PRV: 50 - 1000 Volts Io: 10 Amperes

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    Fenamin2 Fenaminsky
    1. The document provides specifications for silicon bridge rectifiers rated from 50 to 1000 Volts. 2. The rectifiers have a maximum forward current of 10 Amps and can withstand peak forward surge currents up to 300 Amps. 3. They feature high current and surge capability, low reverse current, low forward voltage drop, and are ideal for printed circuit boards.

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    BR1000 - BR1010: Silicon Bridge Rectifiers PRV: 50 - 1000 Volts Io: 10 Amperes

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    Fenamin2 Fenaminsky
    55 views2 pages
    1. The document provides specifications for silicon bridge rectifiers rated from 50 to 1000 Volts. 2. The rectifiers have a maximum forward current of 10 Amps and can withstand peak forward surge currents up to 300 Amps. 3. They feature high current and surge capability, low reverse current, low forward voltage drop, and are ideal for printed circuit boards.

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    BR1000-1010

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    1. The document provides specifications for silicon bridge rectifiers rated from 50 to 1000 Volts. 2. The rectifiers have a maximum forward current of 10 Amps and can withstand peak forward surge currents up to 300 Amps. 3. They feature high current and surge capability, low reverse current, low forward voltage drop, and are ideal for printed circuit boards.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    55 views2 pages

    BR1000 - BR1010: Silicon Bridge Rectifiers PRV: 50 - 1000 Volts Io: 10 Amperes

    Uploaded by

    Fenamin2 Fenaminsky
    1. The document provides specifications for silicon bridge rectifiers rated from 50 to 1000 Volts. 2. The rectifiers have a maximum forward current of 10 Amps and can withstand peak forward surge currents up to 300 Amps. 3. They feature high current and surge capability, low reverse current, low forward voltage drop, and are ideal for printed circuit boards.

    Copyright:

    © All Rights Reserved
    Download as PDF, TXT or read online from Scribd
    Download as pdf or txt
    of 2

    BR1000 - BR1010 SILICON BRIDGE RECTIFIERS

    PRV : 50 - 1000 Volts BR10


    Io : 10 Amperes 0.520 (13.20)
    0.480 (12.20)
    0.158 (4.00)
    AC
    FEATURES : 0.142 (3.60)
    * High current capability
    * High surge current capability 0.77 (19.56)
    * High reliability 0.73 (18.54)

    * Low reverse current 0.290 (7.36)


    0.210 (5.33)
    * Low forward voltage drop AC
    * Ideal for printed circuit board
    0.052 (1.32)
    0.048 (1.22)
    MECHANICAL DATA :
    * Case : Reliable low cost construction 0.75 (19.1)
    utilizing molded plastic technique Min.
    0.30 (7.62)
    * Epoxy : UL94V-O rate flame retardant
    0.25 (6.35)
    * Lead : Axial lead solderable per
    MIL - STD 202 , Method 208 guaranteed
    * Polarity : Polarity symbols marked on case Dimensions in inches and ( millimeters )
    * Mounting position : Any
    * Weight : 6.1 grams

    MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS


    Rating at 25 °C ambient temperature unless otherw ise specified.
    Single phase, half w ave, 60 Hz, resistive or inductive load.
    For capacitive load, derate current by 20%.

    RATING SYMBOL BR1000 BR1001 BR1002 BR1004 BR1006 BR1008 BR1010 UNITS

    Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 Volts
    Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 Volts
    Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 Volts
    Maximum Average Forw ard Current Tc=55°C IF(AV) 10 Amp.
    Peak Forw ard Surge Current Single half sine w ave

    Superimposed on rated load (JEDEC Method) IFSM 300 Amp.


    Current Squared Time at t < 8.3 ms. I2t 160 A2S
    Maximum Forw ard Voltage per Diode at IF = 5 Amp. VF 1.0 Volts
    Maximum DC Reverse Current Ta = 25 °C IR 10 µA
    at Rated DC Blocking Voltage Ta = 100 °C IR(H) 200 µA
    Typical Thermal Resistance (Note 1) RθJC 2.5 °C/W
    Operating Junction Temperature Range TJ - 40 to + 150 °C
    Storage Temperature Range TSTG - 40 to + 150 °C

    Notes :
    1. Thermal Resistance from junction to case w ith units mounted on a 3.2" x 3.2" x 0.12" (8.2cm.x 8.2cm.x 0.3cm.) Al.-Finned Plate.
    UPDATE : APRIL 23, 1998
    RATING AND CHARACTERISTIC CURVES ( BR1000 - BR1010 )

    FIG.1 - DERATING CURVE FOR OUTPUT FIG.2 - MAXIMUM NON-REPETITIVE PEAK


    RECTIFIED CURRENT FORWARD SURGE CURRENT
    AVERAGE FORWARD OUTPUT CURRENT

    PEAK FORWARD SURGE CURRENT,


    12 300

    10 250

    8 200 TJ = 50 °C

    AMPERES
    AMPERES

    6 150

    4 100

    8.3 ms SINGLE HALF SINE WAVE


    2 HEAT-SINK MOUNTING, Tc 50
    JEDEC METHOD
    3.2" x 3.2" x 0.12" THK.
    (8.2cm x8.2cm x 0.3cm) Al.-PLATE
    0 0
    0 25 50 75 100 125 150 175 1 2 4 6 10 20 40 60 100

    CASE TEMPERATURE, ( °C) NUMBER OF CYCLES AT 60Hz

    FIG.3 - TYPICAL FORWARD CHARACTERISTICS FIG.4 - TYPICAL REVERSE CHARACTERISTICS


    REVERSE CURRENT, MICROAMPERES

    PER DIODE PER DIODE


    100 10

    TJ = 100 °C
    FORWARD CURRENT, AMPERES

    Pulse Width = 300 µs


    1 % Duty Cycle

    10 1.0

    1.0 0.1 TJ = 25 °C

    TJ = 25 °C
    0.1 0.01 0 20 40 60 80 100 120 140
    PERCENT OF RATED REVERSE
    VOLTAGE, (%)
    0.01
    0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

    FORWARD VOLTAGE, VOLTS

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