EGP10A THRU EGP10M

SINTERED GLASS PASSIVATED JUNCTION HIGH EFFICIENT RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere

TEEN
NTTEEDD
PPAAT DO-204AL

FEATURES
* GPRC (Glass Passivated Rectifier Chip) inside
1.0(25.4)
MIN.
* Glass passivated cavity-free junction
* Superfast recovery time for high efficiency
0.107(2.70)
* Low forward voltage , high current capability
0.080(2.00)
DIA. * Low leakage current
* High surge current capability
o
* High temperature soldering guaranteed: 260 C/10 seconds,
0.205(5.20)
0.160(4.10)

0.375" (9.5mm) lead length, 5lbs. (2.3 kg) tension

* Plastic package has Underwriters Laboratory Flammability
Classification 94V-0
1.0(25.4)
MIN.

MECHANICAL DATA
0.034(0.86)
0.028(0.71)
DIA. Case : JEDEC DO-204AL molded plastic over glass body
Terminals : Plated axial leads , solderable per MIL-STD-750,
*Dimensions in inches and (millimeters) Method 2026
TM Polarity : Color band denotes cathode end
Mounting Position : Any
Weight : 0.012 ounes , 0.3 gram

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

o
Ratings at 25 C ambient temperature EGP10
SYMBOLS UNITS
unless otherwise specified. A B D F G J K M
Maximum repetitive peak reverse voltage VRRM 50 100 200 300 400 600 800 1000 Volts

Maximum RMS voltage VRMS 35 70 140 210 280 420 560 700 Volts
Maximum DC blocking voltage VDC 50 100 200 300 400 600 800 1000 Volts

Maximum average forward rectified current

I (AV) 1.0 Amps
0.375" (9.5mm) lead length (SEE FIG.1)

Peak forward surge current 8.3ms single half sine-wave

IFSM 30 25 Amps
superimposed on rated load (JEDEC Method)

Maximum instantaneous forward voltage at 1.0 A VF 1.0 1.25 1.7 Volts

o
TA=25 C 5 5
Maximum DC reverse current o
TA=125 C IR 30 50 uA
at rated DC blocking voltage o
TA=150 C 50 -

Maximum reverse recovery time (NOTE 1) trr 50 75 nS

Typical junction capacitance (NOTE 2) CJ 15 pF

o
Typical thermal resistance (NOTE 3) R JA 50 C/W
o
Operating junction and storage temperature range TJ,TSTG -65 to +175 -55 to +150 C

NOTES : (1) Reverse recovery test condition : IF 0.5A, IR=1.0A, Irr=0.25A

(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead lengths, P.C.B. mounted.

REV. : 0 Zowie Technology Corporation

 RATINGS AND CHARACTERISTIC CURVES EGP10A THRU EGP10M

FIG.1 - FORWARD CURRENT DERATING CURVE FIG.2 - MAXIMUM NON-REPETITIVE

PEAK FORWARD SURGE CURRENT
1.0 30
AVERAGE FORWARD RECTIFIED

PEAK FORWARD SURGE CURRENT,

RESISTIVE OR
INDUCTIVE LOAD
TJ=TJ max.
25 8.3ms SINGLE HALF SINE-WAVE
CURRENT, AMPERES

(JEDEC Method)
20
EGP10A~EGP10G

AMPERES
EGP10J~EGP10M EGP10A~EGP10G
0.5 15

EGP10J~EGP10M
10

5
0.375" (9.5mm) LEAD LENGTH
0 0
0 25 50 75 100 125 150 175 1 10 100
AMBIENT TEMPERATURE, C
o NUMBER OF CYCLES AT 60Hz

FIG.3 - TYPICAL INSTANTANEOUS FIG.4 - TYPICAL REVERSE CHARACTERISTICS

FORWARD CHARACTERISTICS
10.00 100
PULSE WIDTH=300uS
IINSTANTANEOUS FORWARD CURRENT,

1% DUTY CYCLE
INSTANTANEOUS REVERSE LEAKAGE
CURRENT, MICROAMPERES

10
1.00
AMPERES

1
0.10

o
TJ=125 C
EGP10J~EGP10M o
TJ=150 C
EGP10G
EGP10A~EGP10F 0.1
0.01 0 20 40 60 80 100 110
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 PERCENT OF RATED PEAK REVERSE VOLTAGE,%
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS

FIG.5 - TYPICAL JUNCTION CAPACITANCE FIG.6 - TYPICAL TRANSIENT THERMAL IMPEDANCE

TRANSIENT THERMAL IMPEDANCE( C/W)

200 100
o
TJ = 25 C
JUNCTION CAPACITANCE, pF

100
60
40 10

20

10
6 1
4

1 0.1
.1 .2 .4 1.0 2 4 10 20 40 100 0.01 0.10 1.0 10 100
REVERSE VOLTAGE, VOLTS t , PULSE DURATION, sec

REV. : 0 Zowie Technology Corporation