RD16HHF1: Silicon RF Power MOS FET (
RD16HHF1: Silicon RF Power MOS FET (
RD16HHF1: Silicon RF Power MOS FET (
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
OUTLINE DRAWING
DESCRIPTION 9.1+/-0.7 1.3+/-0.4
3.2+/-0.4
designed for HF RF power amplifiers applications. 3.6+/-0.2
2
12.3+/-0.6
9+/-0.4
FEATURES
High power gain:
4.8MAX
Pout>16W, Gp>16dB @Vdd=12.5V,f=30MHz 1.2+/-0.4
12.3MIN 0.8+0.10/-0.15
APPLICATION 1 2 3
0.5+0.10/-0.15
For output stage of high power amplifiers in 2.5 2.5
4.5+/-0.5
5deg
3.1+/-0.6 PINS
1:GATE
9.5MAX 2:SOURCE
3:DRAIN
RoHS COMPLIANT note:
Torelance of no designation means typical value.
RD16HHF1-101 is a RoHS compliant products. Dimension in mm.
RoHS compliance is indicate by the letter “G” after the lot
marking.
This product include the lead in high melting temperature type solders.
However, it is applicable to the following exceptions of RoHS Directions.
1.Lead in high melting temperature type solders(i.e.tin-lead solder alloys containing more than85% lead.)
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
TYPICAL CHARACTERISTICS
8 Ta=+25°C
60
Ids(A)
Pch(W)
40
4
20
2
0 0
0 40 80 120 160 200 0 2 4 6 8 10
AMBIENT TEMPERATURE Ta(°C) Vgs(V)
40
Ciss(pF)
Vgs=8V
Ids(A)
4 30
Vgs=7V Ta=+25°C
20 f=1MHz
2 Vgs=6V
10
Vgs=5V 0
0
0 2 4 6 8 10 0 10 20 30
Vds(V) Vds(V)
6
Coss(pF)
60
Crss(pF)
40 4
20 2
0 0
0 10 20 30 0 10 20 30
Vds(V) Vds(V)
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
TYPICAL CHARACTERISTICS
Vdd=12.5V
40 Idq=0.5A
80 20 80
ηd
Pout(W) Idd(A)
Gp
30 60 15 60
ηd(%)
ηd(%)
ηd
20 40 Ta=+25°C
10 40
f=30MHz
Vdd=12.5V
Idq=0.5A
10 20 5 20
Idd
Idd
0 0 0 0
-10 0 10 20 30 0.0 0.2 0.4 0.6 0.8
Pin(dBm) Pin(W)
Ids(A)
Po(W)
15 Idd 3 4 +75°C
10 2
2
5 1
0 0 0
4 6 8 10 12 14 2 4 6 8 10
Vdd(V) Vgs(V)
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
TEST CIRCUIT(f=30MHz)
Vgg Vdd
C1
C1 L2
8.2K ohm 330μF,50V
10μF,50V*3pcs
220pF 68pF 100pF C1
C1
1K ohm L1
RD16HHF1 88pF
L3
C1 1 ohm L4 L5 C2
RF-in RF-OUT
82pF 100pF 200pF 200pF
15 15
65 34
75 41
85 43
90 45
100 67
91
100
C1:100pF,0.022μF,0.1μF in parallel
Dimensions:mm
C2:470pF*2 in parallel
Note:Board material PTFE substrate
L1: 10 Turns,I.D8mm,D0.9mm copper wire Micro strip line width=4.2mm/50 ohm,er:2.7,t=1.6mm
L2: 10 Turns,I.D6mm,D1.6mm silver plateted copper
wire
L3: 9 Turns,I.D5.6mm,D0.9mm copper wire
L4: 4 Turns,I.D5.6mm,D0.9mm ,P=0.5mm copper wire
L5: 5 Turns,I.D5.6mm,D0.9mm ,P=1mm copper wire
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
Zo=50Ω
f=30MHz Zout
f=30MHz Zin
Zin , Zout
f Zin Zout
(MHz) (ohm) (ohm) Conditions
30 20.02-j89.42 2.99-j3.66 Po=20W, Vdd=12.5V,Pin=0.4W
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W
ATTENTION:
1.High Temperature ; This product might have a heat generation while operation,Please take notice that have
a possibility to receive a burn to touch the operating product directly or touch the product until cold after switch
off. At the near the product,do not place the combustible material that have possibilities to arise the fire.
2.Generation of High Frequency Power ; This product generate a high frequency power. Please take notice
that do not leakage the unnecessary electric wave and use this products without cause damage for human and
property per normal operation.
3.Before use; Before use the product,Please design the equipment in consideration of the risk for human and
electric wave obstacle for equipment.
2.RA series products (RF power amplifier modules) and RD series products (RF power transistors) are designed
for consumer mobile communication terminals and were not specifically designed for use in other applications.
In particular, while these products are highly reliable for their designed purpose, they are not manufactured
under a quality assurance testing protocol that is sufficient to guarantee the level of reliability typically deemed
necessary for critical communications elements and In the application, which is base station applications and
fixed station applications that operate with long term continuous transmission and a higher on-off frequency
during transmitting, please consider the derating, the redundancy system, appropriate setting of the maintain
period and others as needed. For the reliability report which is described about predicted operating life time of
Mitsubishi Silicon RF Products , please contact Mitsubishi Electric Corporation or an authorized Mitsubishi
Semiconductor product distributor.
3. RD series products use MOSFET semiconductor technology. They are sensitive to ESD voltage therefore
appropriate ESD precautions are required.
4. In the case of use in below than recommended frequency, there is possibility to occur that the device is
deteriorated or destroyed due to the RF-swing exceed the breakdown voltage.
5. In order to maximize reliability of the equipment, it is better to keep the devices temperature low. It is
recommended to utilize a sufficient sized heat-sink in conjunction with other cooling methods as needed (fan,
etc.) to keep the channel temperature for RD series products lower than 120deg/C(in case of
Tchmax=150deg/C) ,140deg/C(in case of Tchmax=175deg/C) under standard conditions.
6. Do not use the device at the exceeded the maximum rating condition. In case of plastic molded devices, the
exceeded maximum rating condition may cause blowout, smoldering or catch fire of the molding resin due to
extreme short current flow between the drain and the source of the device. These results causes in fire or
injury.
7. For specific precautions regarding assembly of these products into the equipment, please refer to the
supplementary items in the specification sheet.
8. Warranty for the product is void if the products protective cap (lid) is removed or if the product is modified in
any way from it’s original form.
9. For additional “Safety first” in your circuit design and notes regarding the materials, please refer the last page
of this data sheet.
10. Please refer to the additional precautions in the formal specification sheet.
RD16HHF1
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,16W