TPS54335 1A etcTI
TPS54335 1A etcTI
TPS54335 1A etcTI
Simplified Schematic
VIN VIN VIN VIN
C1 C1
TPS54335A TPS54336A
C BOOT C BOOT
EN BOOT EN BOOT
LO LO
PH VOUT PH VOUT
RT SS
CO CO
COMP COMP
R O1
R O1
CC
CC
VSENSE VSENSE
C2 C2
R RT RC RC R O2
R O2
C SS
GND GND
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS54335A, TPS54335-1A, TPS54336A
SLVSCD5D – NOVEMBER 2014 – REVISED FEBRUARY 2016 www.ti.com
Table of Contents
1 Features .................................................................. 1 8 Application and Implementation ........................ 22
2 Applications ........................................................... 1 8.1 Application Information............................................ 22
3 Description ............................................................. 1 8.2 Typical Applications ................................................ 23
4 Revision History..................................................... 2 9 Power Supply Recommendations...................... 38
5 Pin Configuration and Functions ......................... 3 10 Layout................................................................... 39
6 Specifications......................................................... 4 10.1 Layout Guidelines ................................................. 39
6.1 Absolute Maximum Ratings ..................................... 4 10.2 Layout Example .................................................... 39
6.2 ESD Ratings.............................................................. 4 11 Device and Documentation Support ................. 40
6.3 Recommended Operating Conditions....................... 4 11.1 Custom Design with WEBENCH Tools................. 40
6.4 Thermal Information .................................................. 5 11.2 Receiving Notification of Documentation Updates 40
6.5 Electrical Characteristics........................................... 5 11.3 Device Support...................................................... 40
6.6 Timing Requirements ................................................ 6 11.4 Documentation Support ........................................ 40
6.7 Switching Characteristics .......................................... 6 11.5 Related Links ........................................................ 40
6.8 Typical Characteristics .............................................. 7 11.6 Community Resource............................................ 40
7 Detailed Description ............................................ 10 11.7 Trademarks ........................................................... 41
7.1 Overview ................................................................. 10 11.8 Electrostatic Discharge Caution ............................ 41
7.2 Functional Block Diagram ....................................... 11 11.9 Glossary ................................................................ 41
7.3 Feature Description................................................. 11 12 Mechanical, Packaging, and Orderable
7.4 Device Functional Modes........................................ 21 Information ........................................................... 41
4 Revision History
Changes from Revision C (March 2015) to Revision D Page
• Deleted Selective Disclosure statement from data sheet and added the Related Links section ........................................... 1
• Changed the Device Functional Modes section .................................................................................................................. 21
• Changed the Power Supply Recommendations section ..................................................................................................... 38
BOOT 1 8 RT BOOT 1 8 SS
VIN 2 7 EN VIN 2 7 EN
PowerPAD PowerPAD
PH 3 6 COMP PH 3 6 COMP
VIN 1 10 RT VIN 1 10 SS
PH 2 9 BOOT PH 2 9 BOOT
Exposed Exposed
GND 3 Thermal 8 EN GND 3 Thermal 8 EN
Pad Pad
GND 4 7 COMP GND 4 7 COMP
6 Specifications
6.1 Absolute Maximum Ratings (1)
MIN MAX UNIT
VIN –0.3 30 V
EN –0.3 6 V
BOOT –0.3 (VPH + 7.5) V
Input voltage
VSENSE –0.3 3 V
COMP –0.3 3 V
RT –0.3 3 V
SS –0.3 3 V
BOOT-PH 0 7.5 V
Output voltage PH –1 30 V
PH, 10-ns transient –3.5 30 V
VDIFF (GND to exposed thermal pad) –0.2 0.2 V
EN 100 100 µA
Source current RT 100 100 µA
PH Current-limit A
PH Current-limit A
Sink current
COMP 200 200 µA
Operating junction temperature –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under the absolute maximum ratings may cause permanent damage to the device. These are stress
ratings only, and functional operation of the device at these or any other conditions beyond those indicated under the recommended
operating conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1) The device must operate within 150°C to ensure continuous function and operation of the device.
210 140
130
190
120
170
On Resistance (m
110
On Resistance (m
150 100
130 90
80
110
70
90 60
70 50
±50 ±25 0 25 50 75 100 125 150 ±50 ±25 0 25 50 75 100 125 150
Junction Temperature (ƒC) C001 Junction Temperature (ƒC) C002
VIN = 12 V VIN = 12 V
Figure 1. High-Side MOSFET on Resistance vs Junction Figure 2. Low-Side MOSFET on Resistance vs Junction
Temperature Temperature
0.808 495
0.804
485
0.800 480
475
0.796
470
0.792 465
±50 ±25 0 25 50 75 100 125 150 ±50 ±25 0 25 50 75 100 125 150
Junction Temperature (ƒC) C003 Junction Temperature (ƒC) C004
Figure 3. Voltage Reference vs Junction Temperature Figure 4. Oscillator Frequency vs Junction Temperature
1.230 3.50
3.45
EN-UVLO Threshold (V)
Hysteresis Current ( A)
1.225
3.40
1.220 3.35
3.30
1.215
3.25
1.210 3.20
±50 ±25 0 25 50 75 100 125 150 ±50 ±25 0 25 50 75 100 125 150
Junction Temperature (ƒC) C005 Junction Temperature (ƒC) C006
VIN = 12 V VIN = 12 V
Figure 5. UVLO Threshold vs Junction Temperature Figure 6. Hysteresis Current vs Junction Temperature
Non-Switching Operating
Quiescent Current ( A)
1.175 350
Pullup Current ( A)
1.15 300
1.125 250
T
TJ = ±40ƒC
J = ±40ƒC
T
TJJ =
= 25ƒC
25ƒC
T
TJJ =
= 150ƒC
150ƒC
1.1 200
±50 ±25 0 25 50 75 100 125 150 4 8 12 16 20 24 28
Junction Temperature (ƒC) C007 Input Voltage (V) C008
VIN = 12 V
Figure 7. Pullup Current vs Junction Temperature Figure 8. Non-Switching Operating Quiescent Current vs
Input Voltage
10 2.40
TTJ ±40ƒC
J ==±40ƒC
Shutdown Quiescent Current ( A)
TTJ
J ==25ƒC
25ƒC
8 TTJ
J ==150ƒC
150ƒC SS Charge Current ( A)
2.35
6
2.30
4
2.25
2
0 2.20
4 8 12 16 20 24 28 ±50 ±25 0 25 50 75 100 125 150
Input Voltage (V) C009 Junction Temperature (ƒC) C010
VEN = 0 V
Figure 9. Shutdown Quiescent Current vs Input Voltage Figure 10. SS Charge Current vs Junction Temperature
120 6.0
Minimum Controllable Duty Ratio (%)
Minimum Controllable On Time (ns)
110
5.0
100
90
4.0
80
70 3.0
±50 ±25 0 25 50 75 100 125 150 ±50 ±25 0 25 50 75 100 125 150
Junction Temperature (ƒ) C011 Junction Temperature (ƒC) C012
VIN = 12 V VIN = 12 V
Figure 11. Minimum Controllable On Time vs Junction Figure 12. Minimum Controllable Duty Ratio vs Junction
Temperature Temperature
5.0
2.1
4.5
2.0 4.0
±50 ±25 0 25 50 75 100 125 150 4 8 12 16 20 24 28
Junction Temperature (ƒC) C013 Input Voltage (V) C014
Figure 13. BOOT-PH UVLO Threshold vs Junction Figure 14. Current Limit Threshold vs Input Voltage
Temperature
7 Detailed Description
7.1 Overview
The device is a 28-V, 3-A, synchronous step-down (buck) converter with two integrated n-channel MOSFETs. To
improve performance during line and load transients the device implements a constant-frequency, peak current-
mode control which reduces output capacitance and simplifies external frequency-compensation design.
The device has been designed for safe monotonic startup into pre-biased loads. The device has a typical default
startup voltage of 4 V. The EN pin has an internal pullup-current source that can provide a default condition when
the EN pin is floating for the device to operate. The total operating current for the device is 310 µA (typical) when
not switching and under no load. When the device is disabled, the supply current is less than 5 μA.
The integrated 128-mΩ and 84-mΩ MOSFETs allow for high-efficiency power-supply designs with continuous
output currents up to 3 A.
The device reduces the external component count by integrating the boot recharge diode. The bias voltage for
the integrated high-side MOSFET is supplied by a capacitor between the BOOT and PH pins. The boot capacitor
voltage is monitored by an UVLO circuit and turns off the high-side MOSFET when the voltage falls below a
preset threshold. The output voltage can be stepped down to as low as the 0.8-V reference voltage.
The device minimizes excessive output overvoltage transients by taking advantage of the overvoltage power-
good comparator. When the regulated output voltage is greater than 106% of the nominal voltage, the
overvoltage comparator is activated, and the high-side MOSFET is turned off and masked from turning on until
the output voltage is lower than 104%.
The TPS54335A device has a wide switching frequency of 50 kHz to 1500 kHz which allows for efficiency and
size optimization when selecting the output filter components. The internal 2-ms soft-start time is implemented to
minimize inrush currents.
The TPS54336A device has a fixed 340-kHz switching frequency. The device adjusts the soft-start time with the
SS pin.
Thermal
UVLO
Hiccup
Enable
Ip Ih
Comparator
Shutdown
Logic
Hiccup
Shutdown
Enable
Threshold
OV
Boot
Charge
Voltage HS MOSFET
Current Power Stage
Reference and
Comparator PH
Deadtime
Control
Logic
Slope
Compensation
VIN Regulator
Hiccup
Shutdown
Overload Maximum LS MOSFET
Oscillator
Recovery Current-Limit
Clamp Current
Sense
GND
VIN
Ip Ih
R1
R2 EN
æ VENfalling ö
VSTART ç ÷ - VSTOP
ç VENrising ÷
R1 = è ø
æ VENfalling ö
Ip ç1 - ÷ + Ih
ç
è VENrising ÷ø
where
• IP = 1.15 μA
• IH = 3.3 μA
• VENfalling = 1.17 V
• VENrising = 1.21 V (2)
R1´ VENfalling
R2 =
VSTOP - VENfalling + R1(Ip + Ih )
where
• IP = 1.15 μA
• IH = 3.3 μA
• VENfalling = 1.17 V
• VENrising = 1.21 V (3)
600
400
200
0
0 250 500 750 1000 1250 1500
Oscillator Frequency (kHz) C026
PH
Power Stage VOUT
8 A/V a
b RESR
R1
COMP
c VSENSE
RL
+ VREF
R3 CO
Roea gmea
C2 Coea R2
1300 µA/V
C1
VC
RESR
RL
gmps
CO
VOUT
VC Adc
RESR ƒp
RL
gmps
CO
ƒz
æ s ö
ç1 + ÷
VOUT è 2p ´ ƒ z ø
= Adc ´
VC æ s ö
ç1 + ÷
ç 2p ´ ƒp ÷ø
è (6)
Adc = gmps ´ RL
where
• gmps is the power stage gain (8 A/V)
• RL is the load resistance (7)
1
ƒp =
CO ´ RL ´ 2p
C11
R8
VSENSE
Type 2A Type 2B
COMP
where
• gmea is the GM amplifier gain (1300 μA/V)
• gmps is the power stage gain (8 A/V)
• VREF is the reference voltage (0.8 V) (10)
3. Place a compensation zero at the dominant pole and use Equation 11 to calculate the value of ƒp.
æ 1 ö
ç ƒp = ÷
è CO ´ RL ´ 2p ø (11)
4. Use Equation 12 to calculate the value of C4.
R ´ CO
C4 = L
R4 (12)
5. The use of C6 is optional. C6 can be used to cancel the zero from the ESR (equivalent series resistance) of
the output capacitor CO. If used, use Equation 13 to calculate the value of C6.
R ´ CO
C6 = ESR
R4 (13)
6. Type III compensation can be implemented with the addition of one capacitor, C11. The use of C11 allows
for slightly higher loop bandwidths and higher phase margins. If used, use Equation 14 to calculate the value
of C11.
1
C11 =
(2 ´ p ´ R8 ´ ƒC ) (14)
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
NOTE
This heat-pad shape is the only difference between the TPS54335A and TPS54335-1A
devices. The electrical functions and performances of both devices are the same. The
thermal resistance and parameter values between these two packages are almost the
same with negligible differences.
TPS54335A
TPS54335-1A
TPS54336A
1mm
Figure 21. Difference Between the Two DRC Packages
22 Submit Documentation Feedback Copyright © 2014–2016, Texas Instruments Incorporated
C5 VSENSE
120 pF
R2 R7 C4 R6
43.2 kΩ 143 kΩ 0.012 µF 19.1 kΩ
NOTE
The actual input-voltage ripple is greatly affected by parasitics associated with the layout
and the output impedance of the voltage source.
The Design Requirements section shows the actual input voltage ripple for this circuit which is larger than the
calculated value. This measured value is still below the specified input limit of 400 mV. The maximum voltage
across the input capacitors is VIN(MAX) + ΔVIN / 2. The selected bypass capacitor is rated for 35 V and the ripple
current capacity is greater than 3 A. Both values provide ample margin. The maximum ratings for voltage and
current must not be exceeded under any circumstance.
where
• KIND is a coefficient that represents the amount of inductor ripple current relative to the maximum output
current (19)
In general, the value of KIND is at the discretion of the designer; however, the following guidelines may be used.
For designs using low-ESR output capacitors, such as ceramics, a value as high as KIND = 0.3 can be used.
When using higher ESR output capacitors, KIND = 0.2 yields better results.
For this design example, use KIND = 0.3. The minimum inductor value is calculated as 13.4 μH. For this design, a
close standard value of 15 µH was selected for LMIN.
For the output filter inductor, the RMS current and saturation current ratings must not be exceeded. Use
Equation 20 to calculate the RMS inductor current (IL(RMS)).
2
1 æ VOUT ´ VIN(MAX) - VOUT ö
( )
2
IL(RMS) = IOUT(MAX) + ´ ç ÷
12 ç VIN(MAX) ´ LOUT ´ ƒSW ´ 0.8 ÷
è ø (20)
Use Equation 21 to calculate the peak inductor current (IL(PK)).
VOUT ´ (VIN(MAX) - VOUT )
IL(PK) = IOUT(MAX) +
1.6 ´ VIN(MAX) ´ LOUT ´ ƒSW (21)
For this design, the RMS inductor current is 3.002 A and the peak inductor current is 3.503 A. The selected
inductor is a Coilcraft 15 μH, XAL6060-153MEB. This inductor has a saturation current rating of 5.8 A and an
RMS current rating of 6 A which meets the requirements. Smaller or larger inductor values can be used
depending on the amount of ripple current the designer wants to allow so long as the other design requirements
are met. Larger value inductors have lower AC current and result in lower output voltage ripple. Smaller inductor
values increase AC current and output voltage ripple. In general, for the TPS54335A device, use inductors with
values in the range of 0.68 μH to 100 μH.
2 ´ DIOUT
CO >
ƒSW ´ DVOUT
where
• ΔIOUT is the change in output current
• ƒSW is the switching frequency of the regulator
• ΔVOUT is the allowable change in the output voltage (22)
For this example, the transient load response is specified as a 5% change in the output voltage, VOUT, for a load
step of 1.5 A. For this example, ΔIOUT = 1.5 A and ΔVOUT = 0.05 × 5 = 0.25 V. Using these values results in a
minimum capacitance of 35.3 μF. This value does not consider the ESR of the output capacitor in the output
voltage change. For ceramic capacitors, the ESR is usually small enough to ignore in this calculation.
Equation 23 calculates the minimum output capacitance required to meet the output voltage ripple specification.
In this case, the maximum output voltage ripple is 30 mV. Under this requirement, Equation 23 yields 12.3 µF.
1 1
CO > ´
8 ´ ƒSW VOUTripple
Iripple
where
• ƒSW is the switching frequency
• VOUTripple is the maximum allowable output voltage ripple
• Iripple is the inductor ripple current (23)
Use Equation 24 to calculate the maximum ESR an output capacitor can have to meet the output-voltage ripple
specification. Equation 24 indicates the ESR should be less than 29.8 mΩ. In this case, the ESR of the ceramic
capacitor is much smaller than 29.8 mΩ.
VOUTripple
RESR <
Iripple (24)
Additional capacitance deratings for aging, temperature, and DC bias should be considered which increases this
minimum value. For this example, two 47-μF 10-V X5R ceramic capacitors with 3 mΩ of ESR are used.
Capacitors generally have limits to the amount of ripple current they can handle without failing or producing
excess heat. An output capacitor that can support the inductor ripple current must be specified. Some capacitor
data sheets specify the RMS value of the maximum ripple current. Use Equation 25 to calculate the RMS ripple
current that the output capacitor must support. For this application, Equation 25 yields 116.2 mA for each
capacitor.
æ VOUT ´ VIN(MAX) - VOUT
( ) ö
1
ICOUT(RMS) = ´ ç ÷
12 ç VIN(MAX) ´ LOUT ´ ƒSW ´ NC ÷
è ø (25)
40 120
Gain = 2.23 dB
at ƒ = 31.62 kHz
20 60
Gain (dB)
Phase (°)
0 0
–20 –60
–40 –120
Gain
Phase
–60 –180
10 100 1000 10000 100000
Frequency (Hz) C020
For this design, the intended crossover frequency is 31.62 kHz (an actual measured data point exists for that
frequency). From the power stage gain and phase plots, the gain at 31.62 kHz is 2.23 dB and the phase is about
-106 degrees. For 60 degrees of phase margin, additional phase boost from a feed-forward capacitor in parallel
with the upper resistor of the voltage set point divider is not needed. R3 sets the gain of the compensated error
amplifier to be equal and opposite the power stage gain at crossover. Use Equation 27 to calculate the required
value of R3.
-GPWRSTG
10 20 VOUT
R3 = ´
gmea VREF (27)
To maximize phase gain, the compensator zero is placed one decade below the crossover frequency of 31.62
kHz. Use Equation 28 to calculate the required value for C4.
1
C4 =
ƒ
2 ´ p ´ R3 ´ CO
10 (28)
To maximize phase gain the high frequency pole is placed one decade above the crossover frequency of 31.62
kHz. The pole can also be useful to offset the ESR of aluminum electrolytic output capacitors. Use Equation 29
to calculate the value of C5.
1
C5 =
2 ´ p ´ R3 ´ 10 ´ ƒCO (29)
For this design the calculated values for the compensation components are as follows:
R3 = 3.74 kΩ
C4 = 0.012 µF
C5 = 120 pF
100 100
90 90
80 80
70 70
Efficiency (%)
Efficiency (%)
60 60
50 50
40 40
30 30
20 20
VIN = 12 V VIN = 12 V
10 10
VIN = 24 V VIN = 24 V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.001 0.01 0.1 1 10
Output Current (A) C015 Output Current (A) C016
0.5 0.10
VIN = 12 V IOUT = 1.5 A
0.4 0.08
VIN = 24 V
0.3 0.06
Load Regulation (%)
0.2 0.04
0.1 0.02
0.0 0.00
±0.1 ±0.02
±0.2 ±0.04
±0.3 ±0.06
±0.4 ±0.08
±0.5 ±0.10
0.0 0.5 1.0 1.5 2.0 2.5 3.0 8 10 12 14 16 18 20 22 24 26 28
Output Current (A) C017 Input Voltage (V) C018
Figure 26. TPS54335A Load Regulation Figure 27. TPS54335A Line Regulation
60 180
20 60
Gain (dB)
Phase (°)
0 0
IOUT = 1 A/div
–20 –60
–40 –120
Gain
Phase
–60 –180
10 100 1000 10000 100000 1000000
Time = 200 µs/div Frequency (Hz) C019
Figure 28. TPS54335A Transient Response Figure 29. TPS54335A Loop Response
PH = 10 V/div
PH = 10 V/div
Figure 30. TPS54335A Full-Load Output Ripple Figure 31. TPS54335A 100-mA Output Ripple
PH = 10 V/div PH = 10 V/div
Figure 32. TPS54335A No-Load Output Ripple Figure 33. TPS54335A Full-Load Input Ripple
VIN = 10 V/div
VIN = 10 V/div
EN = 2 V/div EN = 2 V/div
Figure 34. TPS54335A Startup Relative To VIN Figure 35. TPS54335A Startup Relative To Enable
EN = 2 V/div EN = 2 V/div
Figure 36. TPS54335A Shutdown Relative To VIN Figure 37. TPS54335A Shutdown Relative To EN
C5 VSENSE
120 pF
R2 C8 C4 R6
43.2 kΩ 0.01 µF 0.012 µF 19.1 kΩ
100 100
90 90
80 80
70 70
Efficiency (%)
Efficiency (%)
60 60
50 50
40 40
30 30
20 20
VIN = 12 V VIN = 12 V
10 10
VIN = 24 V VIN = 24 V
0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.001 0.01 0.1 1 10
Output Current (A) C021 Output Current (A) C022
0.5 0.5
VIN = 12 V VIN = 12 V
0.4 0.4
VIN = 24 V VIN = 24 V
0.3 0.3
0.2 0.2
0.1 0.1
0.0 0.0
±0.1 –0.1
±0.2 –0.2
±0.3 –0.3
±0.4 –0.4
±0.5 –0.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0
Output Current (A) C023 Output Current (A) C023
Figure 41. TPS54336A DDA Load Regulation Figure 42. TPS54336A DRC Load Regulation
0.10 0.10
IOUT = 1.5 A
0.08 0.08
0.06 0.06
0.04 0.04
0.02 0.02
0.00 0.00
±0.02 –0.02
±0.04 –0.04
±0.06 –0.06
±0.08 –0.08
±0.10 –0.10
8 12 16 20 24 28 8 10 12 14 16 18 20 22 24 26 28
Input Voltage (V) C024 Input Voltage (V) C023
IOUT = 1.5 A
Figure 43. TPS54336A DDA Line Regulation Figure 44. TPS54336A DRC Line Regulation
60 180
20 60
Gain (dB)
Phase (°)
0 0
IOUT = 1 A/div
-20 -60
-40 -120
Gain
Phase
-60 -180
10 100 1000 10000 100000 1000000
Time = 200 µs/div Frequency (Hz) C025
Figure 45. TPS54336A Transient Response Figure 46. TPS54336A Loop Response
PH = 10 V/div PH = 10 V/div
Figure 47. TPS54336A Full-Load Output Ripple Figure 48. TPS54336A 100-mA Output Ripple
PH = 10 V/div PH = 10 V/div
Figure 49. TPS54336A No-Load Output Ripple Figure 50. TPS54336A Full- Load Input Ripple
VIN = 20 V/div
VIN = 20 V/div
EN = 5 V/div EN = 5 V/div
SS = 2 V/div SS = 2 V/div
Figure 51. TPS54336A Startup Relative to VIN Figure 52. TPS54336A Startup Relative to Enable
EN = 5 V/div EN = 5 V/div
SS = 2 V/div SS = 2 V/div
Figure 53. TPS54336A Shutdown Relative to VIN Figure 54. TPA54336A Shutdown Relative to EN
10 Layout
PH COMP
GND VSENSE
Compensation
Network
Exposed
Power Thermal Pad
Area Feedback
Ground Resistors
Output
Inductor
SW node copper pour
area on internal or
bottom layer Power
Ground
Output
VOUT Filter
Capacitor
Note: Pin 8 for the TPS54336A device is SS. Connect an SS capacitor instead of an RT resistor from pin 8 to GND.
11.7 Trademarks
PowerPAD, Eco-mode, E2E are trademarks of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
All other trademarks are the property of their respective owners.
11.8 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.9 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 10-Dec-2020
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
TPS54335-1ADRCR ACTIVE VSON DRC 10 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 543351
TPS54335-1ADRCT ACTIVE VSON DRC 10 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 85 543351
TPS54335ADDAR ACTIVE SO PowerPAD DDA 8 2500 RoHS & Green SN Level-2-260C-1 YEAR -40 to 150 54335A
TPS54335ADRCR ACTIVE VSON DRC 10 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 150 54335A
TPS54335ADRCT ACTIVE VSON DRC 10 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 150 54335A
TPS54336ADDA ACTIVE SO PowerPAD DDA 8 75 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 150 54336A
TPS54336ADDAR ACTIVE SO PowerPAD DDA 8 2500 RoHS & Green NIPDAUAG Level-2-260C-1 YEAR -40 to 150 54336A
TPS54336ADRCR ACTIVE VSON DRC 10 3000 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 150 54336A
TPS54336ADRCT ACTIVE VSON DRC 10 250 RoHS & Green NIPDAU Level-2-260C-1 YEAR -40 to 150 54336A
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 17-Jul-2020
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 17-Jul-2020
Pack Materials-Page 2
GENERIC PACKAGE VIEW
DDA 8 PowerPAD TM SOIC - 1.7 mm max height
PLASTIC SMALL OUTLINE
Images above are just a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4202561/G
GENERIC PACKAGE VIEW
DRC 10 VSON - 1 mm max height
3 x 3, 0.5 mm pitch PLASTIC SMALL OUTLINE - NO LEAD
This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4226193/A
www.ti.com
PACKAGE OUTLINE
DRC0010M SCALE 3.800
VSON - 1 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
3.1 A
B
2.9
6X (0.18)
2X (0.98)
1 MAX C
SEATING PLANE
0.08 C
1.06±0.1
2X (0.73) (0.2) TYP
EXPOSED 0.05
4X (0.23) 0.00
THERMAL PAD
5
6
2X
11
2 2.15±0.1
1
10
8X 0.5
0.30
10X
0.18
PIN 1 ID 0.5
10X 0.1 C A B
(OPTIONAL) 0.3
0.05 C
SEE DETAIL
4222672/A 02/2016
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
DRC0010M VSON - 1 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
10X (0.6)
(1.06)
1
10
10X (0.24)
(0.83)
11 SYMM
(2.15)
8X (0.5)
(R0.05) TYP
5 6
4222672/A 02/2016
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If some or all are implemented, recommended via locations are shown.
www.ti.com
EXAMPLE STENCIL DESIGN
DRC0010M VSON - 1 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
10X (0.24)
(0.58)
11 SYMM
8X (0.5)
(0.96)
(R0.05) TYP
5 6
(1)
(2.8)
4222672/A 02/2016
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
PACKAGE OUTLINE
DRC0010J SCALE 4.000
VSON - 1 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
3.1 B
A
2.9
1.0 C
0.8
SEATING PLANE
0.05
0.00 0.08 C
1.65 0.1
2X (0.5)
(0.2) TYP
EXPOSED 4X (0.25)
THERMAL PAD
5 6
2X 11 SYMM
2
2.4 0.1
10
1
8X 0.5 0.30
10X
0.18
PIN 1 ID SYMM
0.1 C A B
(OPTIONAL)
0.5 0.05 C
10X
0.3
4218878/B 07/2018
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for optimal thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
DRC0010J VSON - 1 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
(1.65)
(0.5)
10X (0.6)
1
10
10X (0.24)
11
SYMM (2.4)
(3.4)
(0.95)
8X (0.5)
5 6
(R0.05) TYP
( 0.2) VIA
TYP
(0.25)
(0.575)
SYMM
(2.8)
0.07 MIN
0.07 MAX EXPOSED METAL ALL AROUND
ALL AROUND
EXPOSED METAL
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
DRC0010J VSON - 1 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
2X (1.5)
(0.5)
SYMM
EXPOSED METAL
11 TYP
10X (0.6)
1
10
(1.53)
10X (0.24) 2X
(1.06)
SYMM
(0.63)
8X (0.5)
6
5
(R0.05) TYP
4X (0.34)
4X (0.25)
(2.8)
4218878/B 07/2018
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
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