Tps 54260
Tps 54260
TPS54260
SLVSA86D – MARCH 2010 – REVISED OCTOBER 2018
TPS54260 80
70
BOOT
EN
Efficiency - %
60
SS /TR PH V OUT 50
40
RT /CLK
30
COMP VIN=12V
VSENSE 20 VOUT=3.3V
fsw=300kHz
10
GND 0
0 0.5 1.0 1.5 2.0 2.5 3.0
IO - Output Current - A
An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications,
intellectual property matters and other important disclaimers. PRODUCTION DATA.
TPS54260
SLVSA86D – MARCH 2010 – REVISED OCTOBER 2018 www.ti.com
Table of Contents
1 Features .................................................................. 1 7.4 Device Functional Modes........................................ 28
2 Applications ........................................................... 1 8 Application and Implementation ........................ 29
3 Description ............................................................. 1 8.1 Application Information............................................ 29
4 Revision History..................................................... 2 8.2 Typical Applications ............................................... 29
5 Pin Configuration and Functions ......................... 3 9 Power Supply Recommendations...................... 41
6 Specifications......................................................... 4 10 Layout................................................................... 41
6.1 Absolute Maximum Ratings ...................................... 4 10.1 Layout Guidelines ................................................. 41
6.2 ESD Ratings.............................................................. 4 10.2 Layout Example .................................................... 41
6.3 Recommended Operating Conditions....................... 4 11 Device and Documentation Support ................. 42
6.4 Thermal Information .................................................. 5 11.1 Device Support .................................................... 42
6.5 Electrical Characteristics........................................... 5 11.2 Receiving Notification of Documentation Updates 42
6.6 Typical Characteristics .............................................. 7 11.3 Community Resources.......................................... 42
7 Detailed Description ............................................ 11 11.4 Trademarks ........................................................... 42
7.1 Overview ................................................................. 11 11.5 Electrostatic Discharge Caution ............................ 42
7.2 Functional Block Diagram ....................................... 12 11.6 Glossary ................................................................ 43
7.3 Feature Description................................................. 12 12 Mechanical, Packaging, and Orderable
Information ........................................................... 43
4 Revision History
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
• Added Pin Configuration and Functions section, ESD Ratings table, Feature Description section, Device Functional
Modes, Application and Implementation section, Power Supply Recommendations section, Layout section, Device
and Documentation Support section, and Mechanical, Packaging, and Orderable Information section .............................. 1
• Simplified front page schematic for clarity .............................................................................................................................. 1
• Deleted Junction-to-ambient thermal resistance (custom board) from Thermal Information ................................................. 5
• Added "the level set" to Fixed Frequency PWM Control description ................................................................................... 12
DGQ Package
10-Pin HVSSOP DRC Package
Top View 10-Pin VSON
Top View
BOOT 1 10 PH
RT/CLK 5 6 PWRGD
Pin Functions
PIN
I/O DESCRIPTION
NAME NO.
A bootstrap capacitor is required between BOOT and PH. If the voltage on this capacitor is below the
BOOT 1 O
minimum required by the output device, the output is forced to switch off until the capacitor is refreshed.
VIN 2 I Input supply voltage, 3.5 V to 60 V.
Enable pin, internal pull-up current source. Pull below 1.2V to disable. Float to enable. Adjust the input
EN 3 I
undervoltage lockout with two resistors.
Slow-start and Tracking. An external capacitor connected to this pin sets the output rise time. Since the
SS/TR 4 I
voltage on this pin overrides the internal reference, it can be used for tracking and sequencing.
Resistor Timing and External Clock. An internal amplifier holds this pin at a fixed voltage when using an
external resistor to ground to set the switching frequency. If the pin is pulled above the PLL upper threshold,
RT/CLK 5 I a mode change occurs and the pin becomes a synchronization input. The internal amplifier is disabled and
the pin is a high impedance clock input to the internal PLL. If clocking edges stop, the internal amplifier is re-
enabled and the mode returns to a resistor set function.
An open drain output, asserts low if output voltage is low due to thermal shutdown, dropout, over-voltage or
PWRGD 6 O
EN shut down.
VSENSE 7 I Inverting node of the transconductance (gm) error amplifier.
Error amplifier output, and input to the output switch current comparator. Connect frequency compensation
COMP 8 O
components to this pin.
GND 9 — Ground
PH 10 O The source of the internal high-side power MOSFET.
Thermal Pad -- — GND pin must be electrically connected to the exposed pad on the printed circuit board for proper operation.
6 Specifications
6.1 Absolute Maximum Ratings
over operating temperature range (unless otherwise noted) (1)
MIN MAX UNIT
VIN –0.3 65
EN –0.3 5
VSENSE –0.3 3
Input voltage COMP –0.3 3 V
PWRGD –0.3 6
SS/TR –0.3 3
RT/CLK –0.3 3.6
BOOT-PH –0.3 8
Output voltage PH –0.6 65 V
PH, 10-ns transient –5 65
Voltage difference PAD to GND –200 200 mV
EN 100 μA
BOOT 100 mA
Source current VSENSE 10 μA
PH Current Limit A
RT/CLK 100 μA
VIN Current limit A
COMP 100 μA
Sink current
PWRGD 10 mA
SS/TR 200 μA
Operating junction temperature, TJ –40 150 °C
Storage temperature, Tstg –65 150 °C
(1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings
only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating
Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
(1) JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.
(2) JEDEC document JEP157 states that 250-V CDM allows safe manufacturing with a standard ESD control process.
(1) For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
(2) Power rating at a specific ambient temperature TA should be determined with a junction temperature of 150°C. This is the point where
distortion starts to substantially increase. See power dissipation estimate in application section of this data sheet for more information.
500 0.816
Static Drain-Source On-State Resistance (mW)
125 0.792
0 0.784
–50 –25 0 25 50 75 100 125 150 –50 –25 0 25 50 75 100 125 150
Junction Temperature (°C) C001
Junction Temperature (°C) C002
VI = 12 V VI = 12 V
600
6.0 580
570
5.5
560
5.0 550
-50 -25 0 25 50 75 100 125 150 –50 –25 0 25 50 75 100 125 150
TJ - Junction Temperature - °C Junction Temperature (°C) C004
VI = 12 V VI = 12 V
RT = 200 kΩ
Figure 3. Switch Current Limit vs Junction Temperature Figure 4. Switching Frequency vs Junction Temperature
2500 500
2000 400
Switching Frequency (kHz)
1500 300
1000 200
500 100
0 0
0 25 50 75 100 125 150 175 200 200 300 400 500 600 700 800 900 1000 1100 1200
RT/CLK Resistance (kW) C005 RT/CLK Resistance (kW) C006
VI = 12 V VI = 12 V
TJ = 25°C TJ = 25°C
Figure 5. Switching Frequency vs RT/CLK Resistance High- Figure 6. Switching Frequency vs RT/CLK Resistance Low-
Frequency Range Frequency Range
VI = 12 V VI = 12 V
450
100
400
80
gm - mS
gm - mS
350
60
300
40
250
20 200
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ - Junction Temperature - °C TJ - Junction Temperature - °C
–3.5
EN Threshold (V)
1.30
I(EN) (μA)
–3.75
1.20
–4
1.10
-50 -25 0 25 50 75 100 125 150 –4.25
Junction Temperature (qC) D001
–50 –25 0 25 50 75 100 125 150
VI = 12 V Junction Temperature (°C) C010
VI = 12 V
VI(EN) = Theshold + 50 mV
Figure 9. EN Pin Voltage vs Junction Temperature
Figure 10. EN Pin Current vs Junction Temperature
–0.8 –1
–0.85 –1.5
I(SS/TR) (μA)
I(EN) (μA)
–0.9 –2
–0.95 –2.5
–1 –3
–50 –25 0 25 50 75 100 125 150 –50 –25 0 25 50 75 100 125 150
Junction Temperature (°C) C011 Junction Temperature (°C) C012
VI = 12 V VI = 12 V
VI(EN) = Theshold – 50 mV
Figure 11. EN Pin Current vs Junction Temperature Figure 12. SS/TR Charge Current vs Junction Temperature
500 80
% of Nominal fsw
425 60
II(SS/TR) - mA
350
40
20
275
0
200 0 0.2 0.4 0.6 0.8
-50 0 50 100 150
TJ - Junction Temperature - °C VSENSE (V) C014
VI = 12 V
TJ = 25°C
Figure 13. SS/TR Discharge Current vs Junction Figure 14. Switching Frequency vs VSENSE
Temperature
2 2
1.5 1.5
I(VIN) (μA)
I(VIN) (μA)
1 1
0.5 0.5
0 0
–50 –25 0 25 50 75 100 125 150 0 10 20 30 40 50 60
Junction Temperature (°C) C015
Input Voltage (V) C016
VI = 12 V TJ = 25°C
Figure 15. Shutdown Supply Current vs Junction Figure 16. Shutdown Supply Current vs Input Voltage (Vin)
Temperature
210 170
VI = 12 V, o
TJ = 25 C,
VI(VSENSE) = 0.83 V
190 VI(VSENSE) = 0.83 V
170
150
150
I(VIN) - mA
I(VIN) - mA
130
130
110
90
70 110
-50 0 50 100 150 0 20 40 60
TJ - Junction Temperature - °C VI - Input Voltage - V
Figure 17. VIN Supply Current vs Junction Temperature Figure 18. VIN Supply Current vs Input Voltage
VSENSE Rising
80 110
60
100
40
VSENSE Rising
95
20
90 VSENSE Falling
0 85
–50 –25 0 25 50 75 100 125 150 –50 –25 0 25 50 75 100 125 150
Junction Temperature (°C) C019
Junction Temperature (°C) C020
VI = 12 V VI = 12 V
Figure 19. PWRGD On Resistance vs Junction Temperature Figure 20. PWRGD Threshold vs Junction Temperature
2.5 3
2.25 2.75
VI(BOOT-PH) (V)
VI(VIN) (V)
2 2.50
1.75 2.25
1.5 2
–50 –25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
Junction Temperature (°C) C021 Junction Temperature (°C) C022
Figure 21. BOOT-PH UVLO vs Junction Temperature Figure 22. Input Voltage (UVLO) vs Junction Temperature
600 60
V(SS/TR) = 0.4 V
VI = 12 V,
500 o 50 VI = 12 V
TJ = 25 C
400 40
Offset - mV
Offset - mV
300 30
200 20
100 10
0 0
0 100 200 300 400 500 600 700 800 -50 -25 0 25 50 75 100 125 150
VSENSE - mV TJ - Junction Temperature - °C
Figure 23. SS/TR to VSENSE Offset vs VSENSE Figure 24. SS/TR to VSENSE Offset vs Temperature
7 Detailed Description
7.1 Overview
The TPS54260 device is a 60-V, 2.5-A, step-down (buck) regulator with an integrated high-side N-channel
MOSFET. To improve performance during line and load transients the device implements a constant frequency,
current mode control which reduces output capacitance and simplifies external frequency compensation design.
The wide switching frequency of 100kHz to 2500kHz allows for efficiency and size optimization when selecting
the output filter components. The switching frequency is adjusted using a resistor to ground on the RT/CLK pin.
The device has an internal phase lock loop (PLL) on the RT/CLK pin that is used to synchronize the power
switch turn on to a falling edge of an external system clock.
The TPS54260 has a default start up voltage of approximately 2.5V. The EN pin has an internal pull-up current
source that can be used to adjust the input voltage under voltage lockout (UVLO) threshold with two external
resistors. In addition, the pull up current provides a default condition. When the EN pin is floating the device will
operate. The operating current is 138μA when not switching and under no load. When the device is disabled, the
supply current is 1.3μA.
The integrated 200mΩ high side MOSFET allows for high efficiency power supply designs capable of delivering
2.5 amperes of continuous current to a load. The TPS54260 reduces the external component count by
integrating the boot recharge diode. The bias voltage for the integrated high side MOSFET is supplied by a
capacitor on the BOOT to PH pin. The boot capacitor voltage is monitored by an UVLO circuit and will turn the
high side MOSFET off when the boot voltage falls below a preset threshold. The TPS54260 can operate at high
duty cycles because of the boot UVLO. The output voltage can be stepped down to as low as the 0.8V
reference.
The TPS54260 has a powergood comparator (PWRGD) which asserts when the regulated output voltage is less
than 92% or greater than 109% of the nominal output voltage. The PWRGD pin is an open drain output which
deasserts when the VSENSE pin voltage is between 94% and 107% of the nominal output voltage allowing the
pin to transition high when a pull-up resistor is used.
The TPS54260 minimizes excessive output overvoltage (OV) transients by taking advantage of the OV
powergood comparator. When the OV comparator is activated, the high-side MOSFET is turned off and masked
from turning on until the output voltage is lower than 107%.
The SS/TR (slow-start / tracking) pin is used to minimize inrush currents or provide power supply sequencing
during power-up. A small value capacitor should be coupled to the pin to adjust the slow-start time. A resistor
divider can be coupled to the pin for critical power supply sequencing requirements. The SS/TR pin is discharged
before the output powers up. This discharging ensures a repeatable restart after an over-temperature fault,
UVLO fault or a disabled condition.
The TPS54260, also, discharges the slow-start capacitor during overload conditions with an overload recovery
circuit. The overload recovery circuit will slow start the output from the fault voltage to the nominal regulation
voltage once a fault condition is removed. A frequency foldback circuit reduces the switching frequency during
start-up and overcurrent fault conditions to help control the inductor current.
PWRGD EN VIN
6 3 2
Shutdown Thermal
Shutdown UVLO
Enable
UV Logic Comparator
Shutdown
Shutdown
Logic
OV
Enable
Threshold
Boot
Charge
Voltage
Minimum Boot
Reference Current
Clamp UVLO
Pulse Sense
ERROR Skip
AMPLIFIER
PWM
VSENSE 7 Comparator 1 BOOT
Logic
SS/TR 4
And
PWM Latch
Shutdown
Slope
Compensation
COMP 8 10 PH
Frequency 11 POWERPAD
Shift
Overload Maximum
Recovery Clamp 9 GND
Oscillator TPS54260 Block Diagram
with PLL
5
RT/CLK
4 5.6
3.8 5.4
3.6 5.2
Start Start
3.4 Stop 5
Stop
3.2 4.8
3 4.6
0 0.05 0.10 0.15 0.20 0 0.05 0.10 0.15 0.20
Output Current (A) C025
Output Current (A) C026
Figure 25. 3.3V Start / Stop Voltage Figure 26. 5.0V Start / Stop Voltage
TPS54260
VIN
Ihys
I1
R1 3.35 mA
1.18 mA
+
R2 EN 1.25 V -
V - VSTOP
R1 = START
IHYS
(2)
VENA
R2 =
VSTART - VENA
+ I1
R1 (3)
Another technique to add input voltage hysteresis is shown in Figure 28. This method may be used, if the
resistance values are high from the previous method and a wider voltage hysteresis is needed. The resistor R3
sources additional hysteresis current into the EN pin.
TPS54260
VIN
Ihys
R1
I1 3.35 mA
1.18 mA
+
R2 EN 1.25 V -
VOUT
R3
Copyright © 2016, Texas Instruments Incorporated
VSTART - VSTOP
R1 =
V
IHYS + OUT
R3 (4)
VENA
R2 =
VSTART - VENA V
+ I1 - ENA
R1 R3 (5)
R1
ENA Node
10 kW
R2 5.8V
EN
SS/TR
VSENSE
VOUT
7.3.11 Sequencing
Many of the common power supply sequencing methods can be implemented using the SS/TR, EN and PWRGD
pins. The sequential method can be implemented using an open-drain output of a power-on reset pin of another
device. The sequential method is illustrated in Figure 31 using two TPS54260 devices. The powergood is
coupled to the EN pin on the TPS54260 which will enable the second power supply once the primary supply
reaches regulation. If needed, a 1-nF ceramic capacitor on the EN pin of the second power supply will provide a
1-ms start-up delay. Figure 32 shows the results of Figure 31.
TPS54260
PWRGD
EN EN
EN1
SS /TR SS /TR
PWRGD1
PWRGD
VOUT1
VOUT2
Figure 31. Schematic for Sequential Start-Up Sequence Figure 32. Sequential Start-Up using EN and PWRGD
TPS54160
TPS54260
3 EN
EN1, EN2
4 SS/TR
6 PWRGD
VOUT1
TPS54260
TPS54160
VOUT2
3 EN
4 SS/TR
6 PWRGD
Figure 33. Schematic for Ratiometric Start-Up Sequence Figure 34. Ratiometric Start-Up using Coupled SS/TR
Pins
Figure 33 shows a method for ratio-metric start-up sequence by connecting the SS/TR pins together. The
regulator outputs will ramp up and reach regulation at the same time. When calculating the slow-start time, the
pullup current source must be doubled in Equation 6. Figure 34 shows the results of Figure 33.
TPS54260
EN VOUT 1
SS/TR
PWRGD
TPS54260
EN VOUT 2
R1
SS/ TR
R2
PWRGD
R3
R4
Ratio-metric and simultaneous power supply sequencing can be implemented by connecting the resistor network
of R1 and R2 shown in Figure 35 to the output of the power supply that needs to be tracked or another voltage
reference source. Using Equation 7 and Equation 8, the tracking resistors can be calculated to initiate the Vout2
slightly before, after or at the same time as Vout1. Equation 9 is the voltage difference between Vout1 and Vout2
at the 95% of nominal output regulation.
The deltaV variable is zero volts for simultaneous sequencing. To minimize the effect of the inherent SS/TR to
VSENSE offset (Vssoffset) in the slow-start circuit and the offset created by the pullup current source (Iss) and
tracking resistors, the Vssoffset and Iss are included as variables in the equations.
To design a ratio-metric start-up in which the Vout2 voltage is slightly greater than the Vout1 voltage when Vout2
reaches regulation, use a negative number in Equation 7 through Equation 9 for deltaV. Equation 9 will result in a
positive number for applications which the Vout2 is slightly lower than Vout1 when Vout2 regulation is achieved.
Since the SS/TR pin must be pulled below 40 mV before starting after an EN, UVLO or thermal shutdown fault,
careful selection of the tracking resistors is needed to ensure the device will restart after a fault. Make sure the
calculated R1 value from Equation 7 is greater than the value calculated in Equation 10 to ensure the device can
recover from a fault.
As the SS/TR voltage becomes more than 85% of the nominal reference voltage the Vssoffset becomes larger
as the slow-start circuits gradually handoff the regulation reference to the internal voltage reference. The SS/TR
pin voltage needs to be greater than 1.3 V for a complete handoff to the internal voltage reference as shown in
Figure 23.
Vout2 + deltaV Vssoffset
R1 = ´
VREF Iss (7)
VREF ´ R1
R2 =
Vout2 + deltaV - VREF (8)
EN EN
VOUT1 VOUT1
VOUT2 VOUT2
Figure 36. Ratiometric Start-Up With Tracking Resistors Figure 37. Ratiometric Start-Up With Tracking Resistors
EN
VOUT1
VOUT2
The maximum switching frequency is also limited by the frequency shift circuit. More discussion on the details of
the maximum switching frequency is located below.
206033
RT (k W) =
¦ sw (kHz )1.0888 (11)
2500 500
VI = 12 V,
TJ = 25°C
2000 400
fs - Switching Frequency - kHz
1000 200
500 100
0 0
0 25 50 75 100 125 150 175 200 200 300 400 500 600 700 800 900 1000 1100 1200
RT/CLK - Clock Resistance - kW
RT/CLK Resistance (kW) C006
Figure 39. Switching Frequency vs RT/CLK Resistance
Figure 40. Switching Frequency vs RT/CLK Resistance
High-Frequency Range
Low-Frequency Range
In Figure 41, the solid line illustrates a typical safe operating area regarding frequency shift and assumes the
output voltage is 0 V, and the resistance of the inductor is 0.130 Ω, FET on resistance of 0.2 Ω and the diode
voltage drop is 0.5 V. The dashed line is the maximum switching frequency to avoid pulse skipping. Enter these
equations in a spreadsheet or other software or use the SwitcherPro design software to determine the switching
frequency.
æ 1 ö æ (IL ´ Rdc + VOUT + Vd) ö
fSW (max skip ) = ç ÷ ´ çç ÷
è tON ø è (VIN - IL ´ Rhs + Vd) ø
÷
(12)
fdiv æ (IL ´ Rdc + VOUTSC + Vd) ö
fSW (shift ) = ´ç ÷
tON çè (VIN - IL x Rhs + Vd) ÷ø
where
• IL = inductor current
• Rdc = inductor resistance
• VIN = maximum input voltage
• VOUT = output voltage
• VOUTSC =output voltage during short
• Vd = diode voltage drop
• RDS(on) = switch on resistance
• tON = controllable on time
• ƒDIV = frequency divide equals (1, 2, 4, or 8) (13)
2500
2000
Switching Frequency (kHz)
Shift
1500
Skip
1000
500
0
10 20 30 40 50 60
Input Voltage (V) C027
CLK threshold the device switches from the RT resistor frequency to PLL mode. The internal 0.5-V voltage
source is removed and the CLK pin becomes high impedance as the PLL starts to lock onto the external signal.
Since there is a PLL on the regulator the switching frequency can be higher or lower than the frequency set with
the external resistor. The device transitions from the resistor mode to the PLL mode and then will increase or
decrease the switching frequency until the PLL locks onto the CLK frequency within 100 µs.
When the device transitions from the PLL to resistor mode the switching frequency will slow down from the CLK
frequency to 150 kHz, then reapply the 0.5-V voltage and the resistor will then set the switching frequency. The
switching frequency is divided by 8, 4, 2, and 1 as the voltage ramps from 0 to 0.8 V on VSENSE pin. The device
implements a digital frequency shift to enable synchronizing to an external clock during normal start-up and fault
conditions. Figure 43, Figure 44, and Figure 45 show the device synchronized to an external system clock in
continuous conduction mode (CCM) discontinuous conduction (DCM) and pulse-skip mode (PSM).
TPS54260
10 pF 4 kW
PLL
Rfset
EXT RT/CLK
Clock 50 W
Source
PH
PH
EXT EXT
IL
IL
Figure 43. Plot of Synchronizing in CCM Figure 44. Plot of Synchronizing in DCM
PH
EXT
IL
PH
VO
Power Stage
gmps 10.5 S
a
R1 RESR
COMP RL
c
VSENSE COUT
0.8 V
R3 RO
C0 gmea
C2
310 mS R2
C1
7.3.20 Simple Small Signal Model for Peak Current Mode Control
Figure 47 describes a simple small signal model that can be used to understand how to design the frequency
compensation. The TPS54260 power stage can be approximated to a voltage-controlled current source (duty
cycle modulator) supplying current to the output capacitor and load resistor. The control to output transfer
function is shown in Equation 14 and consists of a DC gain, one dominant pole, and one ESR zero. The quotient
of the change in switch current and the change in COMP pin voltage (node C in Figure 46) is the power stage
transconductance. The gmPS for the TPS54260 is 10.5 S. The low-frequency gain of the power stage frequency
response is the product of the transconductance and the load resistance as shown in Equation 15.
As the load current increases and decreases, the low-frequency gain decreases and increases, respectively. This
variation with the load may seem problematic at first glance, but fortunately the dominant pole moves with the
load current (see Equation 16). The combined effect is highlighted by the dashed line in the right half of
Figure 47. As the load current decreases, the gain increases and the pole frequency lowers, keeping the 0-dB
crossover frequency the same for the varying load conditions which makes it easier to design the frequency
compensation. The type of output capacitor chosen determines whether the ESR zero has a profound effect on
the frequency compensation design. Using high-ESR aluminum electrolytic capacitors may reduce the number
frequency compensation components needed to stabilize the overall loop because the phase margin increases
from the ESR zero at the lower frequencies (see Equation 17).
VO
VC Adc
RESR
fp
RL
gmps
COUT
fz
Figure 47. Simple Small Signal Model and Frequency Response for Peak Current Mode Control
æ s ö
ç1 + ÷
VOUT 2p ´ fZ
= Adc ´ è ø
VC æ s ö
ç1 + ÷
è 2p ´ fP ø (14)
Adc = gmps ´ RL
(15)
1
fP =
COUT ´ RL ´ 2p (16)
1
fZ =
COUT ´ RESR ´ 2p (17)
VO
R1
VSENSE
gmea Type 2A Type 2B Type 1
COMP
Vref
R3 C2 R3
R2 RO CO C2
C1 C1
Aol
A0 P1
Z1 P2
A1
BW
Figure 49. Frequency Response of the Type 2A and Type 2B Frequency Compensation
Aol(V/V)
Ro =
gmea (18)
gmea
CO =
2p ´ BW (Hz) (19)
æ s ö
ç1 + ÷
è 2p ´ fZ1 ø
EA = A0 ´
æ s ö æ s ö
ç1 + ÷ ´ ç1 + ÷
è 2p ´ fP1 ø è 2p ´ fP2 ø
(20)
R2
A0 = gmea ´ Ro ´
R1 + R2 (21)
R2
A1 = gmea ´ Ro| | R3 ´
R1 + R2 (22)
1
P1 =
2p ´ Ro ´ C1 (23)
1
Z1 =
2p ´ R3 ´ C1 (24)
1
P2 = type 2a
2p ´ R3 | | RO ´ (C2 + CO ) (25)
1
P2 = type 2b
2p ´ R3 | | RO ´ CO (26)
1
P2 = type 1
2p ´ R O ´ (C2 + C O ) (27)
NOTE
Information in the following applications sections is not part of the TI component
specification, and TI does not warrant its accuracy or completeness. TI’s customers are
responsible for determining suitability of components for their purposes. Customers should
validate and test their design implementation to confirm system functionality.
A. The estimated printed circuit board area for the components used in this design is 0.55 inch2. This area does not
include test points or connectors.
IRIPPLE =
VOUT ´ (Vin max - VOUT )
Vin max ´ L O ´ fSW (29)
2
1 æ VOUT ´ (Vinmax
- VOUT ) ö
IL(rms) = (IO )2 + 12 ´ çç Vinmax ´ LO ´ fSW
÷
÷
è ø (30)
Iripple
ILpeak = Iout +
2 (31)
to see the change in load current and output voltage and adjust the duty cycle to react to the change. The output
capacitor must be sized to supply the extra current to the load until the control loop responds to the load change.
The output capacitance must be large enough to supply the difference in current for 2 clock cycles while only
allowing a tolerable amount of droop in the output voltage. Equation 32 shows the minimum output capacitance
necessary to accomplish this.
Where ΔIout is the change in output current, ƒsw is the regulators switching frequency and ΔVout is the
allowable change in the output voltage. For this example, the transient load response is specified as a 3%
change in Vout for a load step from 1.5 A to 2.5 A (full load). For this example, ΔIout = 2.5-1.5 = 1.0 A and
ΔVout = 0.03 × 3.3 = 0.099 V. Using these numbers gives a minimum capacitance of 67 μF. This value does not
take the ESR of the output capacitor into account in the output voltage change. For ceramic capacitors, the ESR
is usually small enough to ignore in this calculation. Aluminum electrolytic and tantalum capacitors have higher
ESR that should be taken into account.
The catch diode of the regulator can not sink current so any stored energy in the inductor will produce an output
voltage overshoot when the load current rapidly decreases, see Figure 51. The output capacitor must also be
sized to absorb energy stored in the inductor when transitioning from a high load current to a lower load current.
The excess energy that gets stored in the output capacitor will increase the voltage on the capacitor. The
capacitor must be sized to maintain the desired output voltage during these transient periods. Equation 33 is
used to calculate the minimum capacitance to keep the output voltage overshoot to a desired value. Where L is
the value of the inductor, IOH is the output current under heavy load, IOL is the output under light load, Vf is the
final peak output voltage, and Vi is the initial capacitor voltage. For this example, the worst case load step will be
from 2.5 A to 1.5 A. The output voltage will increase during this load transition and the stated maximum in our
specification is 3 % of the output voltage. This will make Vf = 1.03 × 3.3 = 3.399. Vi is the initial capacitor voltage
which is the nominal output voltage of 3.3 V. Using these numbers in Equation 33 yields a minimum capacitance
of 60 μF.
Equation 34 calculates the minimum output capacitance needed to meet the output voltage ripple specification.
Where fsw is the switching frequency, Voripple is the maximum allowable output voltage ripple, and Iripple is the
inductor ripple current. Equation 34 yields 12 μF.
Equation 35 calculates the maximum ESR an output capacitor can have to meet the output voltage ripple
specification. Equation 35 indicates the ESR should be less than 36 mΩ.
The most stringent criteria for the output capacitor is 67 μF of capacitance to keep the output voltage in
regulation during an load transient.
Additional capacitance de-ratings for aging, temperature and dc bias should be factored in which will increase
this minimum value. For this example, 2 x 47 μF, 10 V ceramic capacitors with 3 mΩ of ESR will be used. The
derated capacitance is 72.4 µF, above the minimum required capacitance of 67 µF.
Capacitors generally have limits to the amount of ripple current they can handle without failing or producing
excess heat. An output capacitor that can support the inductor ripple current must be specified. Some capacitor
data sheets specify the Root Mean Square (RMS) value of the maximum ripple current. Equation 36 can be used
to calculate the RMS ripple current the output capacitor needs to support. For this application, Equation 36 yields
238 mA.
2 ´ DIout
Cout >
¦ sw ´ DVout (32)
Cout > Lo ´
(Ioh2
- Iol2)
(V ¦ 2
- Vi )2
(33)
1 1
Cout > ´
8 ´ ¦ sw VORIPPLE
IRIPPLE (34)
V
RESR < ORIPPLE
IRIPPLE
(35)
Vout ´ (Vin max - Vout)
Icorms =
12 ´ Vin max ´ Lo ´ ¦ sw (36)
32 Submit Documentation Feedback Copyright © 2010–2018, Texas Instruments Incorporated
The programmable UVLO and enable voltages are set using the resistor divider of R1 and R2 between Vin and
ground to the EN pin. Equation 2 through Equation 3 can be used to calculate the resistance values necessary.
For the example application, a 124 kΩ between Vin and EN (R1) and a 30.1 kΩ between EN and ground (R2)
are required to produce the 6.0 and 5.5 volt start and stop voltages.
8.2.1.2.11 Compensation
There are several methods used to compensate DC - DC regulators. The method presented here is easy to
calculate and ignores the effects of the slope compensation that is internal to the device. Since the slope
compensation is ignored, the actual crossover frequency will usually be lower than the crossover frequency used
in the calculations. This method assumes the crossover frequency is between the modulator pole and the esr
zero and the esr zero is at least 10 times greater the modulator pole. Use SwitcherPro software for a more
accurate design.
To get started, the modulator pole, fpmod, and the ESR zero, fz1 must be calculated using Equation 41 and
Equation 42. For Cout, use a derated value of 40 μF. Use equations Equation 43 and Equation 44, to estimate a
starting point for the crossover frequency, fco, to design the compensation. For the example design, fpmod is
1206 Hz and fzmod is 530.5 kHz. Equation 43 is the geometric mean of the modulator pole and the esr zero and
Equation 44 is the mean of modulator pole and the switching frequency. Equation 43 yields 25.3 kHz and
Equation 44 gives 13.4 kHz. Use the lower value of Equation 43 or Equation 44 for an initial crossover frequency.
For this example, a higher fco is desired to improve transient response. the target fco is 35.0 kHz. Next, the
compensation components are calculated. A resistor in series with a capacitor is used to create a compensating
zero. A capacitor in parallel to these two components forms the compensating pole.
Ioutmax
¦p mod =
2 × p × Vout × Cout (41)
1
¦ z mod =
2 ´ p ´ Resr × Cout (42)
fco = f p mod ´ f z mod
(43)
f sw
fco = f p mod ´
2 (44)
To determine the compensation resistor, R4, use Equation 45. Assume the power stage transconductance,
gmps, is 10.5S. The output voltage, Vo, reference voltage, VREF, and amplifier transconductance, gmea, are
3.3V, 0.8V and 310 μS, respectively. R4 is calculated to be 20.2 kΩ, use the nearest standard value of 20.0 kΩ.
Use Equation 46 to set the compensation zero to the modulator pole frequency. Equation 46 yields 4740 pF for
compensating capacitor C5, a 4700-pF is used for this design.
æ 2 ´ p ´ fco ´ Cout ö æ Vout ö
R4 = ç ÷´ç ÷
è gmps ø è Vref ´ gmea ø (45)
1
C5 =
2 ´ p ´ R4 ´ fpmod
(46)
A compensation pole can be implemented if desired using an additional capacitor C8 in parallel with the series
combination of R4 and C5. Use the larger value of Equation 47 and Equation 48 to calculate the C8, to set the
compensation pole. C8 is not used for this design example.
C ´ Re sr
C8 = o
R4 (47)
1
C8 =
R4 ´ f sw ´ p (48)
Vout = 2 V / div
Output Current = 1 A / div (Load Step 1.5 A to 2.5 A)
EN = 2 V / div
SS/TR = 2 V / div
Time = 200 usec / div Time = 5 msec / div
PH = 5 V / div PH = 5 V / div
Figure 53. Output Ripple CCM Figure 54. Output Ripple, DCM
PH = 5 V / div
PH = 5 V / div
Figure 55. Output Ripple, PSM Figure 56. Input Ripple, CCM
100
90
Vin = 50 mV / div (ac coupled)
80
70
Efficiency - %
60
50
PH = 5 V / div 40
30
VIN=12V
20 VOUT=3.3V
fsw=300kHz
10
0
0 0.5 1.0 1.5 2.0 2.5 3.0
Time = 2 usec / div IO - Output Current - A
Figure 57. Input Ripple, DCM Figure 58. Efficiency vs Load Current
100 60 180
90
40 120
80
Phase
70
20 60
Efficiency - %
60 Gain
Phase - o
Gain - dB
50 0 0
40
-20 -60
30
VIN=12V
20 VOUT=3.3V VIN=12 V
fsw=300kHz -40 VOUT=3.3V -120
10 IOUT=2.5A
0 -60 -180
0.001 0.01 0.1 10 100 1-103 1-104 1-105 1-106
IO - Output Current - A f - Frequency - Hz
Figure 59. Light-Load Efficiency Figure 60. Overall Loop Frequency Response
3.4 3.4
3.38 3.38
VO - Output Voltage - V
VO - Output Voltage - V
3.36 3.36
3.34 3.34
VIN=12V
3.32 3.32 VOUT=3.3V
VIN=12V fsw=300kHz
VOUT=3.3V
fsw=300kHz
IOUT=1.5A
3.3 3.3
0 0.5 1.0 1.5 2.0 2.5 3.0 10.8 11.2 11.6 12 12.4 12.8 13.2
IO - Output Current - A IO - Output Current - A
Figure 61. Regulation vs Load Current Figure 62. Regulation vs Input Voltage
VIN +
Cin
Cboot
Lo
VIN BOOT PH GND
Cd R1
GND +
R2 Co
TPS54260
VOUT
VSENSE
EN
SS/TR COMP
RT/CLK Rcomp
Czero Cpole
Css RT
Figure 63. TPS54260 Inverting Power Supply from SLVA317 Application Note
VOPOS
+
VIN + Copos
Cin
Cboot
PH
GND
VIN BOOT
Lo
Cd R1
+
GND Coneg
TPS54260 R2
VSENSE VONEG
EN
SS/TR COMP
RT/CLK Rcomp
Czero Cpole
Css RT
Figure 64. TPS54260 Split-Rail Power Supply based on SLVA369 Application Note
3.8V, 2.0A
L1: MSS1260-103
C4, C5: 47mF 10V X5R
4.2V, 2.0A
24V nom. 18V to 40V
L1: MSS1260-103
C4: 100mF 10V X5R
10 Layout
Output
Capacitor Output
Topside Inductor
Ground Route Boot Capacitor
Area Catch
Trace on another layer to
provide wide path for Diode
topside ground
Input
Bypass
Capacitor BOOT PH
Vin
VIN GND
EN COMP
UVLO
SS/TR VSENSE Compensation
Adjust
Resistor
Resistors Network
RT/CLK PWRGD Divider
Slow Start
Frequency Thermal VIA
Capacitor
Set Resistor
Signal VIA
11.4 Trademarks
Eco-mode, PowerPAD, E2E are trademarks of Texas Instruments.
WEBENCH is a registered trademark of Texas Instruments.
Excel is a registered trademark of Microsoft Corporation.
All other trademarks are the property of their respective owners.
11.5 Electrostatic Discharge Caution
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
11.6 Glossary
SLYZ022 — TI Glossary.
This glossary lists and explains terms, acronyms, and definitions.
www.ti.com 10-Dec-2020
PACKAGING INFORMATION
Orderable Device Status Package Type Package Pins Package Eco Plan Lead finish/ MSL Peak Temp Op Temp (°C) Device Marking Samples
(1) Drawing Qty (2) Ball material (3) (4/5)
(6)
TPS54260DGQ ACTIVE HVSSOP DGQ 10 80 RoHS & Green NIPDAU | NIPDAUAG Level-1-260C-UNLIM -40 to 125 54260
TPS54260DGQR ACTIVE HVSSOP DGQ 10 2500 RoHS & Green NIPDAU | NIPDAUAG Level-1-260C-UNLIM -40 to 125 54260
TPS54260DRCR ACTIVE VSON DRC 10 3000 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 54260
TPS54260DRCT ACTIVE VSON DRC 10 250 RoHS & Green NIPDAU Level-1-260C-UNLIM -40 to 125 54260
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
RoHS: TI defines "RoHS" to mean semiconductor products that are compliant with the current EU RoHS requirements for all 10 RoHS substances, including the requirement that RoHS substance
do not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, "RoHS" products are suitable for use in specified lead-free processes. TI may
reference these types of products as "Pb-Free".
RoHS Exempt: TI defines "RoHS Exempt" to mean products that contain lead but are compliant with EU RoHS pursuant to a specific EU RoHS exemption.
Green: TI defines "Green" to mean the content of Chlorine (Cl) and Bromine (Br) based flame retardants meet JS709B low halogen requirements of <=1000ppm threshold. Antimony trioxide based
flame retardants must also meet the <=1000ppm threshold requirement.
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead finish/Ball material - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead finish/Ball material values may wrap to two
lines if the finish value exceeds the maximum column width.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
Addendum-Page 1
PACKAGE OPTION ADDENDUM
www.ti.com 10-Dec-2020
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
• Automotive: TPS54260-Q1
• Enhanced Product: TPS54260-EP
• Automotive - Q100 devices qualified for high-reliability automotive applications targeting zero defects
• Enhanced Product - Supports Defense, Aerospace and Medical Applications
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jan-2022
Pack Materials-Page 1
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jan-2022
Pack Materials-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com 5-Jan-2022
TUBE
Pack Materials-Page 3
GENERIC PACKAGE VIEW
TM
DGQ 10 PowerPAD HVSSOP - 1.1 mm max height
3 x 3, 0.5 mm pitch PLASTIC SMALL OUTLINE
Images above are just a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4224775/A
www.ti.com
PACKAGE OUTLINE
DGQ0010D SCALE 3.700
PowerPAD TM - 1.1 mm max height
PLASTIC SMALL OUTLINE
C
5.05
TYP SEATING PLANE
4.75
A PIN 1 ID
AREA 0.1 C
8X 0.5
10
1
3.1
2.9 2X
NOTE 3 2
5
6 0.27
10X
0.17
3.1 0.08 C A B 1.1 MAX
B
2.9
NOTE 4
0.23
TYP
0.13
SEE DETAIL A
EXPOSED
THERMAL PAD
4
5
0.25
GAGE PLANE
1.89
1.69
0.15
0.7 0.05
8 0 -8 0.4
1
DETAIL A
1.83 TYPICAL
1.63
4218842/A 01/2019
PowerPAD is a trademark of Texas Instruments.
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. This dimension does not include mold flash, protrusions, or gate burrs. Mold flash, protrusions, or gate burrs shall not
exceed 0.15 mm per side.
4. This dimension does not include interlead flash. Interlead flash shall not exceed 0.25 mm per side.
5. Reference JEDEC registration MO-187, variation BA-T.
www.ti.com
EXAMPLE BOARD LAYOUT
DGQ0010D PowerPAD TM - 1.1 mm max height
PLASTIC SMALL OUTLINE
(2.2)
NOTE 9
(1.83) SOLDER MASK
SOLDER MASK DEFINED PAD
OPENING
SEE DETAILS
10X (1.45)
10X (0.3)
1
10
(1.3)
TYP (1.89)
SYMM SOLDER MASK
OPENING
8X (0.5) (3.1)
NOTE 9
5 6
(R0.05) TYP
(4.4)
4218842/A 01/2019
NOTES: (continued)
www.ti.com
EXAMPLE STENCIL DESIGN
DGQ0010D PowerPAD TM - 1.1 mm max height
PLASTIC SMALL OUTLINE
(1.83)
BASED ON
0.125 THICK
STENCIL
10X (1.45)
10X (0.3)
1
10
(1.89)
SYMM BASED ON
0.125 THICK
8X (0.5) STENCIL
5
6
(R0.05) TYP
SEE TABLE FOR
SYMM DIFFERENT OPENINGS
METAL COVERED FOR OTHER STENCIL
BY SOLDER MASK THICKNESSES
(4.4)
4218842/A 01/2019
NOTES: (continued)
10. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
11. Board assembly site may have different recommendations for stencil design.
www.ti.com
GENERIC PACKAGE VIEW
DRC 10 VSON - 1 mm max height
3 x 3, 0.5 mm pitch PLASTIC SMALL OUTLINE - NO LEAD
This image is a representation of the package family, actual package may vary.
Refer to the product data sheet for package details.
4226193/A
www.ti.com
PACKAGE OUTLINE
DRC0010J SCALE 4.000
VSON - 1 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
3.1 B
A
2.9
1.0 C
0.8
SEATING PLANE
0.05
0.00 0.08 C
1.65 0.1
2X (0.5)
(0.2) TYP
EXPOSED 4X (0.25)
THERMAL PAD
5 6
2X 11 SYMM
2
2.4 0.1
10
1
8X 0.5 0.30
10X
0.18
PIN 1 ID SYMM
0.1 C A B
(OPTIONAL)
0.5 0.05 C
10X
0.3
4218878/B 07/2018
NOTES:
1. All linear dimensions are in millimeters. Any dimensions in parenthesis are for reference only. Dimensioning and tolerancing
per ASME Y14.5M.
2. This drawing is subject to change without notice.
3. The package thermal pad must be soldered to the printed circuit board for optimal thermal and mechanical performance.
www.ti.com
EXAMPLE BOARD LAYOUT
DRC0010J VSON - 1 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
(1.65)
(0.5)
10X (0.6)
1
10
10X (0.24)
11
SYMM (2.4)
(3.4)
(0.95)
8X (0.5)
5 6
(R0.05) TYP
( 0.2) VIA
TYP
(0.25)
(0.575)
SYMM
(2.8)
0.07 MIN
0.07 MAX EXPOSED METAL ALL AROUND
ALL AROUND
EXPOSED METAL
NOTES: (continued)
4. This package is designed to be soldered to a thermal pad on the board. For more information, see Texas Instruments literature
number SLUA271 (www.ti.com/lit/slua271).
5. Vias are optional depending on application, refer to device data sheet. If any vias are implemented, refer to their locations shown
on this view. It is recommended that vias under paste be filled, plugged or tented.
www.ti.com
EXAMPLE STENCIL DESIGN
DRC0010J VSON - 1 mm max height
PLASTIC SMALL OUTLINE - NO LEAD
2X (1.5)
(0.5)
SYMM
EXPOSED METAL
11 TYP
10X (0.6)
1
10
(1.53)
10X (0.24) 2X
(1.06)
SYMM
(0.63)
8X (0.5)
6
5
(R0.05) TYP
4X (0.34)
4X (0.25)
(2.8)
4218878/B 07/2018
NOTES: (continued)
6. Laser cutting apertures with trapezoidal walls and rounded corners may offer better paste release. IPC-7525 may have alternate
design recommendations.
www.ti.com
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