Chapter 3 Solutions

Prob. 3.1
Calculate the approximate donor binding energy for GaAs ( ∈r = 13.2, m *n = 0.067m0 ) .
From Equation 3-8 and Appendix II,

m*n ⋅ q 4 0.067 ⋅ (9.11 ⋅ 10-31kg) ⋅ (1.6 ⋅ 10-19C) 4

E= = = 8.34 ⋅ 10-22 J = 5.2 meV
8 ⋅ (∈0∈r ) 2⋅ h 2 8 ⋅ (8.85 ⋅ 10-12 mF ⋅ 13.2) 2⋅ (6.63 ⋅ 10-34 J⋅s) 2

Prob. 3.2
Plot Fermi function for EF=1eV and show the probability of an occupied state ΔE above EF is
equal to the probability of an empty state ΔE below EF so f ( EF + ΔE ) = 1 - f ( EF -ΔE ) .

1
use f(E) = and kT=0.0259eV

. We or
E -E F

m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
k BT
1+e d th g. in t la
an on in rs h
k g rn to rig
or in a uc y

E(eV) (E-EF)/kT f(E)

w d le tr p

er ld
e lu nt ns co

1.0
th inc de of i tes

0.75 -9.6525 0.99994 0.9

st e ta
ity o g us d S

0.8
0.90 -3.8610 0.97939 0.7
te is ss th ite

0.95 -1.9305 0.87330

in f th se for Un

0.6
u
gr w in e
of rk ( f(E)
th t o a ly by

0.5
0.98 -0.7722 0.68399
y ar d le d

0.4
ro p an o te

1.00 0.0000 0.50000

st ny s d s ec

0.3
de f a rse de ot

0.2
s

1.02 0.7722 0.31600

ill o u vi pr

0.1
w le co ro is

1.05 1.9305 0.12669 0.0

sa eir is p rk
th d wo

0.00 0.50 1.00 1.50

1.10 3.8610 0.02061
an his

E(eV)
T

1.25 9.6525 0.00006

1
occupation probability above E F = f(E F +ΔE) = ΔE
1+e kT

1
empty probability below E F = 1 - f(E F - ΔE) = 1 - - ΔE
1+e kT
- ΔE
1 e kT 1 1
1 - f(E F -ΔE) = 1 - - ΔE = - ΔE = ΔE
= ΔE
= f(E F +ΔE)
1+e kT
1+e kT
e +1
kT
1+e kT

This shows that the probability of an occupied state ΔE above EF is equal to the probability
of an empty state ΔE below EF.
Prob. 3.3
Calculate electron, hole, and intrinsic carrier concentrations.
E g =1.1eV N C =N V n=1015 1
cm3
E C -E d =0.2eV E C -E F =0.25eV T=300K
n=1015 1
cm3
E C -E F E C -E F 0.25eV
-
n = NC ⋅ e kT
→ NC = n ⋅ e kT
= 1015 1
cm3
⋅ e 0.0259eV = 1.56 ⋅1019 1
cm3

N V = 1.56 ⋅1019 1
cm3
E F -E V 0.85eV
- -
p = NV ⋅ e kT
= 1.56 ⋅1019 1
cm3
⋅e 0.0259eV
= 8.71⋅104 1
cm3
Eg
⎛ - ⎞
n i = n ⋅ p = 9.35 ⋅109 1
cm3 ⎜ note: n i = NC ⋅ NV ⋅ e 2kT
may also be used ⎟
⎝ ⎠
Prob 3.4
A semiconductor has a bandstructure about the minimum along [100] described by E=E 0+A

. We or
m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
Cos (αkx) + B {Cos (βky) + Cos (βkx) }. an on in rs h
k g rn to rig
or in a uc y

What is the density-of-states effective mass associated with the X minimum? [Hint: Cos
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat

(2x)=1-2x2 for small x.]

ity o g us d S
te is ss th ite
in f th se for Un
gr w in e

Given that near the energy minimum along [1 0 0], the band structure is :
th t o a ly by
y ar d le d
ro p an o te

E = E0 − A cos(αk x ) − B{cos( βk y ) + cos( βk z )}

st ny s d s ec
de f a rse de ot

s
ill o u vi pr

which can be Taylor expanded near the minima :

w le co ro is
sa eir is p rk
th d wo

2 2 2
an his

⎡ ⎛ αk x ⎞ ⎤ ⎡ ⎛ βk y ⎞ ⎛ βk z ⎞ ⎤
T

E ≈ E0 − A⎢1 − 2⎜ ⎟ ⎥ − B ⎢2 − 2⎜⎜ ⎟⎟ − 2⎜ ⎟ ⎥

⎣⎢ ⎝ 2 ⎠ ⎦⎥ ⎢⎣ ⎝ 2 ⎠ ⎝ 2 ⎠ ⎥⎦
A 2 2 B 2 2
≈ ( E0 − A − 2 B ) + α k x + β ( k y + k z2 )
2 2

!2 *
The effective mass is defined as : m = 2
d E
dk 2
Along (1 0 0) direction (longitudinal direction) , the effective mass becomes :
!2 !2
ml* = =
d 2 E Aα 2
dk x2
Along the two transverse directions , the effective mass becomes :
!2 !2
mt* = 2 =
d E Bβ 2
dk y2
 2 !2
D.O.S. m* = (ml*mt* )1/ 3 =
( AB 2α 2 β 4 )1/ 3

Prob. 3.5
Find temperature at which number of electrons in Γ and Χ minima are equal.
nX N - 0.35
= CX e kT from Equation 3-15
nΓ N CΓ
Since there are 6 X minima along the <1 0 0> directions, Equation 3-16b gives:
3 3
2 2
N cΧ ∝ 6 ⋅ ( m eX ) ∝ 6 ⋅ ( 0.30 )

. We or
m W ina g
3 3

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
2 2

t p or em ch
N cΓ ∝ ( m eΓ ) ∝ ( 0.065 ) d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
3
e lu nt ns co

2
th inc de f i es

nX 6 ⋅ ( 0.30 ) - 0.35
of rk ( stu e o tat

= e kT = 1 for n Γ = n X
ity o g us d S

3
nΓ
te is ss th ite

( 0.065)
in f th se for Un
gr w in e
th t o a ly by
y ar d le d

3 3
ro p an o te

2 2
st ny s d s ec

0.35 0.35
- ( 0.065) 6 ⋅ ( 0.30 )
de f a rse de ot

e kT
= → e kT
= = 59.4
s
ill o u vi pr

3 3
w le co ro is
sa eir is p rk

2 2
6 ⋅ ( 0.30 ) ( 0.065)
th d wo
an his

0.35eV 0.35eV
T

= ln(59.4) = 4.09 → kT = = 0.0857eV

kT 4.09
T = 988K
Prob. 3.6
Discuss m* for GaAs and GaP. What happens if a Γ valley electron moves to the L valley?
From Figure 3.10, the curvature of the Γ valley is much greater than L or X. Thus Γ valley
electrons have much smaller mass. The light mass Γ electrons in GaAs (μn=8500) have
higher mobility than the heavy mass X electrons (μn=300) in GaP since μn is inversely
proportional to m*. If light mass electrons in Γ were transferred to the heavier mass L
valley at constant energy, they would slow down. The conductivity would decrease (see
discussion in Section 10.3).

Prob. 3.7
Find Eg for Si from Figure 3-17.
ln n i

for n i1 and n i2 on graph

1
n i1 n i1 = 3 ⋅1014 = 2 ⋅10-3 1

. We or
K
T1

m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
1
an on in rs h
= 4 ⋅10-3
k g rn to rig

n i2 = 108 1
or in a uc y

K
w d le tr p

er ld
T2
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
ity o g us d S
te is ss th ite

n i2 This result is approximate because the temperature

in f th se for Un
gr w in e
th t o a ly by

dependences of N C , N V , and E g are neglected.

y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk

1
th d wo
an his

1 1 T
T

T1 T2

Eg
- ni Eg
ni = NC NV ⋅ e 2kT
→ E g = - 2kT ⋅ ln → ln n i = - + ln N C N V
NC NV 2kT
n i1 ⎛ E g ⎞ ⎛ E g ⎞ E g ⎛ 1 1 ⎞
ln = ln n i1 - ln n i2 = ⎜ - + ln N C N V ⎟ - ⎜ - + ln N C N V ⎟ = ⋅ ⎜ - ⎟
n i2 ⎝ 2kT1 ⎠ ⎝ 2kT2 ⎠ 2k ⎝ T2 T1 ⎠
⎛ n i1 ⎞ ⎛ 3 ⋅1014 ⎞
⎜ ln ⎟ ⎜ ln ⎟
n i2 10 8
for Si (see above) → E g = 2k ⋅ ⎜ ⎟ = 2 ⋅ 8.62 ⋅1014 ⋅ ⎜ -3 1 -3 1 ⎟ = 1.3eV
⎜ 1 - 1 ⎟ ⎜ 4 ⋅10 K - 2 ⋅10 K ⎟
⎜ T ⎟ ⎜ ⎟
⎝ 2 T1 ⎠ ⎝ ⎠
Prob. 3.8
(a) Find Nd for Si with 1016cm-3 boron atoms and a certain number of donors so
EF -Ei=0.36eV.
E F - Ei
no = nie kT

E F - Ei 0.36eV
n o = Nd - Na → Nd = n o + Na = n i e kT
+ N a = 1.5 ⋅1010 1
cm3
⋅ e 0.0259eV + 1016 1
cm3
= 2.63 ⋅1016 1
cm3

(b) Si with 1016cm-3 In and a certain number of donors has EF-EV=0.26eV. How many In atoms
are unionized (i.e.: neutral)?
1 1
fraction of E a states filled = f(E a ) = Ea -E F
= 0.26eV -0.36eV
= 0.979
1+e kT
1+e .0259eV

unionized In = [1-f(E a ) ] ⋅ N In = 0.021 ⋅1016 1

cm3
= 2.1 ⋅1014 1
cm3

. We or
m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
ity o g us d S
te is ss th ite
in f th se for Un
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo
an his

e
T
Prob. 3.9
Find the displacement of Ei from the middle of Eg for Si at 300K with mn=1.1mo and mp=0.56mo.
Ei is not exactly in the middle of the gap because the density of states N C and NV differ.
EC -Ei Eg
- -
NC ⋅ e kT
= NC ⋅ N V ⋅ e 2kT
since each equal to n i in Equation 3-21 and Equation 3-23
Eg 3
- E C -Ei +
2
NV ⎛ m*p
⎞ 4
e kT
= = ⎜ *
⎟⎟
NC ⎜ m
⎠ ⎝ n
Eg 3 m*p 3 0.56
- ( E C +E i ) = kT ⋅ ⋅ ln * = 0.0259eV ⋅ ⋅ ln = -0.013eV for Si at 300K
2 4 mn 4 1.1
So, Ei is about one half kT below the center of the band gap.

Ec

. We or
Ec - E i

m W ina g

b)
Eg /2

ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y

Ei
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
ity o g us d S
te is ss th ite
in f th se for Un

Ev
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

Prob. 3.10
s
ill o u vi pr
w le co ro is
sa eir is p rk

Is Si doped with 1015 donors per cm3 n-type at 400K? Is Ge?

th d wo
an his

e
T

At T=400K, Figure 3-17 indicates that n ≫ ni for Si doped with Nd = 1015 cm-3; so, the Si would
be n-type. At T=400K, Figure 3-17 indicates that n ≈ ni ≈ 1015 cm-3 for Ge doped with Nd = 1015
cm-3; so, the Ge would require more donors for useful n-type doping.
Prob. 3.11
Calculate electron, hole, and intrinsic carrier concentrations. Sketch band diagram.
N C =1019 1
cm3
N V =5 ⋅1018 1
cm3
E g =2eV T=627 oC=900K n=1017 1
cm3
EC -E F
- ⎛ n ⎞ ⎛ 1017 ⎞
n = NC ⋅ e kT
→ E C -E F = -k ⋅ T ⋅ ln ⎜ ⎟ = -0.078eV ⋅ ln ⎜ 19 ⎟ = 0.36eV
⎝ N C ⎠ ⎝ 10 ⎠
E F - E V = [(E C - E V )-(E C - E F ) ] = ⎡⎣E g -(E C - E F ) ⎤⎦ = [2eV-0.36eV ] = 1.64eV
E F -E V 1.64eV
- 18
-
p = NV ⋅ e kT
= 5 ⋅10 1
cm3
⋅e 0.078eV
= 3.7 ⋅109 1
cm3
Eg
⎛ - ⎞
n i = n ⋅ p = 1.9 ⋅1013 cm1 3 ⎜ note: n i = NC ⋅ NV ⋅ e 2kT
may also be used ⎟
⎝ ⎠
EC
0.36eV
EF

. We or
m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la 2eV
an on in rs h
1.64eV
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat

EV
ity o g us d S
te is ss th ite
in f th se for Un
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo
an his

e
T
Prob. 3.12
n0 = ni µ p / µ n .
(a) Show that the minimum conductivity of a semiconductor occurs when
⎛ n2 ⎞
σ = q ⋅ (n ⋅ µ n +p ⋅ µ p ) = q ⋅ ⎜ n ⋅ µ n + i ⋅ µ p ⎟
⎝ n ⎠
∂σ ⎛ n2 ⎞
= q ⋅ ⎜ µ n - i2 ⋅ µ p ⎟ = 0 for minimum conductivity at electron concentration n min
∂n ⎝ n ⎠
µp µp
n 2min = n i2 ⋅ → n min = n i ⋅
µn µn

(b) What is σmin.

⎛ ⎞
⎜ ⎟
⎛ n i2 ⎞ ⎜ µp n i2
σ min = q ⋅ ⎜ n min ⋅ µ n + ⋅ µ p ⎟ = q ⋅ ⎜ n i ⋅ ⋅µn + ⋅ µ p ⎟⎟ = 2 ⋅ q ⋅ n i ⋅ µ n ⋅ µ p

. We or
n min µn µp

m W ina g

b)
⎝ ⎠

ed e n
in
no W iss ea s

itt id tio
⎜ n ⎟
is e D t w
t p or em ch
⋅
d th g. in t la
⎜ i ⎟
µn
an on in rs h
⎝ ⎠
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es

(c) Calculate σmin and σi for Si.

of rk ( stu e o tat
ity o g us d S
te is ss th ite

σ min = 2 ⋅ q ⋅ n i ⋅ µ n ⋅ µ p = 2 ⋅1.6 ⋅10-19C ⋅1.5 ⋅1010 -6

2 2
1
⋅ 1350 cm
V⋅s ⋅ 480 V⋅s = 3.9 ⋅10
cm 1
in f th se for Un

cm3 Ω⋅cm
gr w in e
th t o a ly by

σi = q ⋅ (n i ⋅ µ n +n i ⋅ µ p ) = 2 ⋅1.6 ⋅10-19C ⋅1.5 ⋅1010 -6

y ar d le d

2 2
1
⋅ (1350 cm
V⋅s ⋅ 480 V⋅s ) = 4.4 ⋅ 10
cm 1
ro p an o te
st ny s d s ec

cm3 Ω⋅cm
de f a rse de ot

s
ill o u vi pr

or the reciprocal of ρi in Appendix III may be taken

w le co ro is
sa eir is p rk
th d wo
an his

e
T
Prob. 3.13
A 2 cm long piece of Si with cross-sectional area of 0.1 cm2 is doped with donors at 1015 cm-3,
and has a resistance of 90 ohms. The saturation velocity of electrons in Si is 107 cm/s for fields
above 105 V/cm. Calculate the electron drift velocity, if we apply a voltage of 100V across the
piece. What is the current through the piece if we apply a voltage of 106 V across it?

ρL L 2 cm
R= = = = 90 Ω
A σA (
σ 0.1 cm2 )
( )(
σ = qµ n n = 1.6 ×10-16 C 1015 cm-3 µ n )
⇒ µ n = 1390 cm2 /V ⋅ s
For 100 V across 2 cm, ε = 50V/cm
Vd = µε = 1390 × 50 cm/s ≅ 69500 cm/s
For V = 106 V, ε = 5 ×105 V/cm > εsat
Vd = Vsat = 107 cm/s

. We or
m W ina g
( )( )(
Current, I = Aqnvsat = 0.1cm2 1.6 ×10−19 C 1015cm-3 107 cm/s = 160 A )( )

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
Prob. 3.14
e lu nt ns co
th inc de f i es

In an n-type semiconductor bar, suppose we double the doping, and double the voltage field
of rk ( stu e o tat
ity o g us d S

across the bar by a factor of 2, how does the current change? (Assume low voltage, and the
te is ss th ite
in f th se for Un

mobility decreases inversely with doping due to ionized impurity scattering.)

gr w in e
th t o a ly by

Next assume, that the applied voltage is so high, that the carriers are velocity saturated. By what
y ar d le d
ro p an o te
st ny s d s ec

factor would the current change when we double the doping and voltage?
de f a rse de ot

s
ill o u vi pr
w le co ro is

I = Aqnµε, or I = Aqnvsat
sa eir is p rk
th d wo
an his

e
T

If n is doubled, µ halved, and ε doubled ⇒ I increases 2X

If high voltage, ( vsat ) , ⇒ n doubled ⇒ I increases 2X

Prob. 3.15
(a) Find no and ρ for Si doped with 1017 cm-3 boron.
N a ? n i so po = N a = 1017 1
cm3
may be assumed
n i2 (1.5 ⋅1010 cm1 3 ) 2
no = = 17 1
= 2.25 ⋅103 cm1 3
po 10 cm3
2
N a = 1017 1
cm3
gives µ p = 250 cm
V⋅s from Figure 3-23

σ = q ⋅ µ p ⋅ po = 1.6 ⋅10-19C ⋅ 250 cm

2

V⋅s
⋅1017 1
cm3
= 4.0 Ω⋅1cm
1 1
ρ= = = 0.25 Ω ⋅ cm
σ 4.0 Ω⋅1cm

(b) Find no for Ge doped with 3·1013 Sb atoms per cm3.

n i2
Assuming Na is zero and using Equation 3-28 gives n o = + Nd or n o2 - N d ⋅ n o - n i2 = 0 .
no
By quadratic formula,
Nd ± Nd2 +4 ⋅ n i2 3 ⋅1013 cm1 3 ± (3 ⋅1013 cm1 3 )2 +4 ⋅ (3 ⋅1013 cm1 3 ) 2

. We or
no = = = 4.4 ⋅1013 cm1 3

m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
2 2
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat
ity o g us d S
te is ss th ite
in f th se for Un
gr w in e
th t o a ly by
y ar d le d
ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo
an his

e
T
Prob. 3.16
Find the current density for applied voltages 2.5V and 2500V respectively.
For 2.5V,
σ = q ⋅ µ n ⋅ n 0 (since n o ? n i ) = 1.6 ⋅10-19C ⋅1500 cm
2 15
V⋅s ⋅10 = 0.24 Ω⋅1cm
1
cm3

1 1
ρ= = = 4.17 Ω ⋅ cm
σ 0.24 Ω⋅1cm
ρ ⋅L4.17 Ω ⋅ cm ⋅ 5 ⋅10-4cm 2.83 ⋅103Ω ⋅ cm 2
R= = =
A A A
I V 2.5V
= = 3 2
= 8.82 ⋅10-2 cmA2 for 2.5V
A R ⋅A 2.83 ⋅10 Ω ⋅ cm

2500V
For 2500V, ε= -4 = 5 ⋅106 V
cm
which is in the velocity saturation regime.
5 ⋅10 cm
I
= q ⋅ n ⋅ vs = 1.6 ⋅10-19C ⋅1015 1
cm3
⋅107 cm
s =1.6 ⋅103 cmA2

. We or
A

m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y

Prob. 3.17
w d le tr p

er ld
e lu nt ns co
th inc de f i es

A semiconductor has a bandgap of 1 eV, and effective density-of-states, Nc= 1019 cm-3, Nv=
of rk ( stu e o tat
ity o g us d S

4X1019 cm-3, electron and hole mobilities of = 4000 and 2500 cm2/V-s, respectively. It is
te is ss th ite
in f th se for Un

subjected to the following potentials at the various locations as follows (assume linear variation
gr w in e
th t o a ly by

of potentials between locations):

y ar d le d
ro p an o te
st ny s d s ec

Point A at x=0 microns, V= 0 V;

de f a rse de ot

s
ill o u vi pr

Point B at x=2 microns, V= -2V

w le co ro is
sa eir is p rk
th d wo

Point C at 4 microns, V= + 4 V
an his

Point D is at 8 microns; electric field is zero between C and D.

T

Sketch the simplified band diagram, properly labeling the positions, energies, and directions of
electric fields.
If the electron concentration at location B is 1018 cm-3, and assuming things are close to
equilibrium, what is the hole concentration there? If an electron at the conduction band edge at B
goes towards C, and how long does it take to get there? If there is negligible scattering at low
electric fields, how long does it take to go from C to D?
 6V
Between B and C, ε = -4
= 3 ×10 4 V/cm
2 ×10 cm
v drift = 4000 cm /V ⋅ s × 3 ×10 4 V/cm = 1.2 ×108 cm/s
2

2 × 10-4 cm
t= = 1.67 ×10 −12 s
1.2 ×108 cm/s

From C to D, v = 1.2 ×108 cm/s without scattering

4 ×10-4 cm
t= 8
= 3.3 ×10−12 s
1.2 ×10 cm/s

( Ec -E F ) ( E v -E F )
-
np = N c e kT
⋅ N ve kT

1 eV
-
(10 18
) ( )( )
cm -3 p = 1019 cm -3 4 ×1019 cm -3 e 0.026 eV ⇒ p = 7.9 ×103 cm -3 at B

. We or
Prob. 3.18

m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
Sketch, with proper labeling of energies and distances, the simplified band diagram of a semiconductor
an on in rs h
k g rn to rig

with a bandgap of 2 eV which is subjected to the following electrostatic potential profile: 0V for x=0 to
or in a uc y
w d le tr p

er ld
e lu nt ns co

1 µm; linearly increasing from 0 to 1.5V between 1 µm to 4 µm; constant potential after that from x=4
th inc de f i es
of rk ( stu e o tat

to 5 µm. We launch an electron to the right, at x=0 with a kinetic energy of 0.5eV. Assuming there is no
ity o g us d S
te is ss th ite

scattering, what is its kinetic energy at x=2 µm? If the effective mass of this electron is 0.5mo, how long
in f th se for Un
gr w in e

does it take the electron to travel from x=4 to 5 µm? If the donor density in this semiconductor is 1017
th t o a ly by
y ar d le d

cm-3, what is the electron drift current density at x=4.5µm?

ro p an o te
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo
an his

e
T
 ⎛ 1 ⎞
At x = 2 µm, the voltage drop is ⎜1.5 V × ⎟ = 0.5 V
⎝ 3 ⎠
So, K.E. = 0.5 eV + 0.5 eV = 1 eV
At x = 4.5 µm, K.E. = 0.5 eV + 1.5 eV = 2 eV
1
( 0.5m0 ) v 2 = 2 eV = 2 ×1.6 ×10-19 J
2
⎛ 2 ×1.6 ×10−19 × 4 ⎞ 6 8
v = ⎜ −31 ⎟ m/s = 1.19 ×10 m/s = 1.19 ×10 cm/s
⎝ 9.1×10 ⎠
4×10-4 cm
t= =3.3×10-12 s
1.2×108 cm/s

10-4 cm
Time = = 0.84 ps
1.19 ×108 cm/s
( )( )(
J = qnv = 1.6 ×10−19 1017 1.19 × 108 A/cm 2 )

. We or
m W ina g

b)
ed e n
= 1.9 × 106 A/cm 2

in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co
th inc de f i es
of rk ( stu e o tat

Prob.3.19
ity o g us d S
te is ss th ite
in f th se for Un
gr w in e
th t o a ly by

(a) Sketch and label the simplified band diagram of a semiconductor with a bandgap of 1.5 eV
y ar d le d
ro p an o te

subject to the following: From x=0 to 2 μm, the voltage is constant. From x= 2 μm to 4 μm, there
st ny s d s ec
de f a rse de ot

is an electric field of 2V/μm pointing to the right. Then from x=4 μm to 8 μm, the voltage
s
ill o u vi pr
w le co ro is

increases by 3V.
sa eir is p rk
th d wo
an his

e
T

(b) A semiconductor has a electron bandstructure E(k)= (4k2 + 5) eV, where k has units of Å-1. (1
Å = 10-10 m). Calculate the effective mass of the electrons. Why is the effective mass different
from the actual electron mass of 9.1X10-31 kg?

(a)

E c (x) = E c - qV(x)
let E c = 0; E g = 1.5 eV
E v (x) = E c (x) - E g
 ( )
E(k) = 4k 2 +5 eV k in Å -1
m 0 = 9.1×10 −31 kg
*ћ2
(b) Effective mass, m = ⎛ 2 ⎞
∂ E
⎜ 2 ⎟
⎝ ∂k ⎠
∂ 2E eV
2
= 4 × 2 -2 = 8 ×10 −20 eV ⋅ m 2
∂k Å

The effective mass is different from the actual free mass of the electron because of the
influence of the lattice potential of the semiconductor/medium on the electron motion.

Prob. 3.20

. We or
Show the electron drift velocity in pure Si for 100 cm
V
is less than vth. Comment on the electron

m W ina g

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
drift velocity for 104 V
. d th g. in t la
an on in rs h
k g rn to rig
cm
or in a uc y
w d le tr p

er ld
e lu nt ns co

vd = ε ⋅ µ n = 100 cm
2 5
V
⋅1350 cm
V⋅s = 1.35 ⋅10
cm
th inc de f i es

s
of rk ( stu e o tat
ity o g us d S

2kT
te is ss th ite

1
m o v 2th = kT → v th = = 9.54 ⋅106 cm
in f th se for Un

2 s
mo
gr w in e
th t o a ly by
y ar d le d
ro p an o te

so, vd < v th for 100 cm

V
st ny s d s ec
de f a rse de ot

s
ill o u vi pr
w le co ro is
sa eir is p rk

For 104 cm , the equivalent calculation for drift velocity assuming constant μn gives 1.35 ⋅107
th d wo

V cm
s
an his

which is larger than the thermal velocity. The device is in velocity saturation.
T

Prob. 3.21
A semiconductor bar of length 8 μm, cross-sectional area of 2 μm2 is uniformly doped with
donors with a much higher concentration than the intrinsic concentration (1011 cm-3) such that
ionized impurity scattering causes its majority carrier mobility to be function of doping as:

μ = 800/ √[ND/(1020 cm-3)] cm2/V-s

If the electron drift current for an applied voltage of 160 V is 10 mA, calculate the doping
concentration in the bar. If the minority carrier mobility is 500 cm2/V-s, and its saturation
velocity is 106 cm/s for fields above 100 kV/cm calculate the hole drift current. What are the
electron and hole diffusion currents in the middle of the bar?
 l = 8 µm = 8 ×10−4 cm ⎧V = 160 V ⎫
2 −8 2 ⎨ ⎬
A = 2 µm = 2 ×10 cm ⎩ I = 10 mA ⎭
ND ? ni

n 0 = N D + n i ≈ N D (n-type Si)
V 160 V
E= = −4
= 2 ×105 V/cm
l 8 ×10 cm
In
electron drift current: J n = = qn 0µ n E
A
⎛ ⎞
10 ×10−3 A ⎜ 800 ⎟
⇒
2 ×10−8 cm 2
= 1.6 (
× 10 −19
C × N D × )
⎜ cm 2
/V ⋅ s ⎟ × 2 ×105 V/cm ( )
⎜⎜ N D ⎟⎟
⎝ 1020 cm-3 ⎠
⇒ 5 ×105 = N D × 0.256 ⇒ N D = 3.81×1012 cm-3

. We or
m W ina g
E = 2 ×105 V/cm > E critical = 105 V/cm ⇒ minority carriers are in saturation region

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
d th g. in t la
an on in rs h
2
k g rn to rig
2
⎛ n i ⎞ 1011 ( )
or in a uc y
w d le tr p

( ) er ld
−19
⇒ J p = qp0 vsat = q ⎜ ⎟ vsat = 1.6 ×10 C × cm -3 ×106 cm/s = 0.42 mA/cm 2
e lu nt ns co

12
⎝ n 0 ⎠ 3.81×10
th inc de f i es
of rk ( stu e o tat
ity o g us d S
te is ss th ite

I p = J p × A = 0.42 mA/cm 2 × ( 2 ×10−8 cm 2 ) = 8.4 ×10−9 mA

in f th se for Un
gr w in e
th t o a ly by
y ar d le d

dn
ro p an o te
st ny s d s ec

Doping is uniform ⇒ = 0 ⇒ diffusion currents = 0

de f a rse de ot

dx
ill o u vi pr
w le co ro is
sa eir is p rk
th d wo
an his

e
T
 Prob. 3.22
T
an his
th d wo

Plot mobility versus temperature.

sa eir is p rk
w le co ro is
ill o u vi pr
de f a rse de ot
st ny s d s ec
ro p an o te
y ar d le d
th t o a ly by
e s
in f th se for Un
te is ss th ite
gr w in e
ity o g us d S
of rk ( stu e o tat
th inc de f i es
e lu nt ns co
w d le tr p
or in a uc y
k g rn to rig
an on in rs h
d th g. in t la
is e D t w
no W iss ea s
t p or em ch
er ld in
m W ina g
itt id tio
ed e n
. We or
b)
 Prob. 3.23

T
an his
th d wo
sa eir is p rk
w le co ro is
ill o u vi pr
de f a rse de ot
st ny s d s ec
ro p an o te
y ar d le d
th t o a ly by
e s
in f th se for Un
te is ss th ite
gr w in e
ity o g us d S
of rk ( stu e o tat
th inc de f i es
e lu nt ns co
w d le tr p
or in a uc y
k g rn to rig
an on in rs h
d th g. in t la
is e D t w
no W iss ea s
t p or em ch
er ld in
m W ina g
itt id tio
ed e n
. We or
b)
Repeat plot of mobility versus temperature in 3.18 considering carrier freeze out.

When freeze-out occurs, ionized impurity scattering disappears, and only the phonon scattering
remains. In Si, other mechanisms, including neutral impurity scattering, contribute to mobility.
Prob. 3.24
Find the hole concentration and mobility with Hall measurement on a p-type semiconductor bar.
The voltage measured is the Hall voltage plus the ohmic drop.
The sign of VH changes with the magnetic field, but the ohmic voltage does not.

VH1 - VH2 3.2mV - (-2.8mV)

VHall = = = 3.0mV
2 2
ohmic drop = 3.2mV-3.0mV = 0.2mV

I x ⋅ Bz 3 ⋅10-3A ⋅10-4 cm
Wb
2
po = (Equation 3-50) = -19 -3 -3 = 3.125 ⋅1017 1
cm3
q ⋅ t ⋅ VAB 1.6 ⋅10 C ⋅ 2 ⋅10 cm ⋅ 3 ⋅10 V
VCD ⋅ w ⋅ t 2 ⋅10-4 V ⋅ 5 ⋅10-2cm ⋅ 2 ⋅10-3cm
ρ= (Equation 3-51) = = 0.033Ω ⋅ cm
Ix ⋅ L 3 ⋅10-3A ⋅ 2 ⋅10-4cm
σ 1 1 2
µp = = = = 600 cm

. We or
-19 V⋅s
1.6 ⋅10 C ⋅ 0.033Ω ⋅ cm ⋅ 3.125 ⋅1017

m W ina g
q ⋅ p0 q ⋅ ρ ⋅ p0 1

b)
ed e n
in
no W iss ea s

itt id tio
is e D t w
t p or em ch
cm3
d th g. in t la
an on in rs h
k g rn to rig
or in a uc y
w d le tr p

er ld
e lu nt ns co

Prob. 3.25
th inc de f i es
of rk ( stu e o tat
ity o g us d S

Find VH with Hall probes misaligned.

te is ss th ite
in f th se for Un

Displacement of the probes by an amount δ give a small IR

gr w in e
th t o a ly by
y ar d le d

drop Vδ in addition to VH. The Hall voltage reverses when the

ro p an o te

I
st ny s d s ec
de f a rse de ot

magnetic field is reversed; however, Vδ does not depend on

s
ill o u vi pr
w le co ro is

the direction of the magnetic field.

sa eir is p rk
th d wo
an his

+
for positive magnetic field: VAB = VH + Vδ
T

A δ
-
for negative magnetic field: VAB = -VH + Vδ
B
+ -
VAB - VAB = 2 ⋅ VH
+ -
VAB - VAB
VH =
2
So, the true Hall voltage may be obtained by subtracting
the voltage with a negative magnetic field from the voltage
with a positive magnetic field and dividing by 2.
 ρ=
1

RH = -
=
Prob. 3.26

1
µ n = 700 cm
2

q ⋅ no
1

=-
σ 11.2 Ω⋅1cm

-19
T 1
V⋅s from Figure 3-23

an his
th d wo 1.6 ⋅10 C ⋅1017
sa eir is p rk
= 0.0893 Ω ⋅ cm

w le co ro is
From Equations 3-49 and 3-52, VAB
1

ill o u vi pr
cm3

de f a rse de ot
st ny s d s ec =
ro p an o te
y ar d le d
Find expected resistivity and Hall voltage.

th t o a ly by
e s
in f th se for Un
t
te is ss th ite
gr w in e
= -62.5 cmC

ity o g us d S
3

I x ⋅ Bz ⋅ R H

of rk ( stu e o tat
σ = q ⋅ µ n ⋅ n o (p0 is negligible) = 1.6 ⋅10-19 C ⋅ 700 cm

th inc de f i es
2

e lu nt ns co
w d le tr p
or in a uc y
V⋅s ⋅10

k g rn to rig
an on in rs h
17

d th g. in t la
is e D t w
1
cm3

no W iss ea s
t p or em ch
er ld in
m W ina g
itt id tio
10-3A ⋅10-5 cm

ed e n
Wb

. We or
10-2 cm

b)
= 11.2 Ω⋅1cm

cm 3
2 ⋅ (-62.5 C )
= -62.5µ V