Silicon NPN Triple Diffused: Application

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2SC2611

Silicon NPN Triple Diffused

Application

High voltage amplifier TV VIDEO output

Outline

TO-126 MOD

1. Emitter
2. Collector
3. Base
1
2
3

Absolute Maximum Ratings (Ta = 25°C)


Item Symbol Ratings Unit
Collector to base voltage VCBO 300 V
Collector to emitter voltage VCEO 300 V
Emitter to base voltage VEBO 5 V
Collector current IC 100 mA
Collector power dissipation PC 1.25 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
2SC2611
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown V(BR)CBO 300 — — V I C = 10 µA, IE = 0
voltage
Collector to emitter breakdown V(BR)CEO 300 — — V I C = 1 mA, RBE = ∞
voltage
Emitter to base breakdown V(BR)EBO 5 — — V I E = 10 µA, IC = 0
voltage
Collector cutoff current I CEO — — 1.0 µA VCE = 250 V, RBE = ∞
DC current transfer ratio hFE 30 — 200 VCE = 20 V, IC = 20 mA
Collector to emitter saturation VCE(sat) — — 1.5 V I C = 20 mA, IB = 2 mA
voltage
Gain bandwidth product fT 50 80 — MHz VCE = 20 V, IC = 20 mA
Collector output capacitance Cob — — 4.0 pF VCB = 20 V, IE = 0, f = 1 MHz

Maximum Collector Dissipation Curve


Typical Output Characteristics
1.5
1.0
16
Collector power dissipation Pc (W)

14
Collector Current IC (mA)

0.8 12
1.0
10
0.6
8

0.4 6
0.5
4
0.2 2 µA

IB = 0
0 50 100 150 0 0.4 0.8 1.2 1.6 2.0
Ambient Temperature TC (°C) Collector to emitter Voltage VCE (V)

2
2SC2611

DC Current Transfer Ratio vs.


Typical Transfer Characteristics Collector Current
100 100
VCE = 20 V
75°
C Pulse

DC current transfer ratio hFE


50 =
Ta
Collector Current IC (mA)

80
VCE = 20 V 25
20 –25
60
10
40
5

20
2

1 0
0 0.2 0.4 0.6 0.8 1.0 1 2 5 10 20 50 100
Base to emitter voltage VBE (V) Collector current IC (mA)

Collector to Emitter Saturation Gain Bandwidth Product vs.


Voltage vs. Collector Current Collector Current
10 100
Collector to emitter saturation voltage

Gain bandwidth product fT (MHz)

5 IC = 10 IB VCE = 20 V
Pulse 80

2
VCE (sat) (V)

60
25

1.0
°C 40
75
5

0.5
–2

=
TC
20
0.2

0.1 0
1 2 5 10 20 50 100 1 2 5 10 20 50 100
Collector current IC (mA) Collector current IC (mA)

3
2SC2611

Collector Output Capacitance vs.


Collector to Base Voltage
50

Collector output capacitance Cob (pF)


f = 1 MHz
20 IE = 0

10

1.0

0.5
1 2 5 10 20 50 100
Collector to base voltage VCB (V)

4
Unit: mm

8.0 ± 0.5 2.7 ± 0.4


φ 3.1 +0.15
–0.1

12
12

11.0 ± 0.5
2.3 ± 0.3

3.7 ± 0.7
120°

1.1

15.6 ± 0.5
0.8

2.29 ± 0.5 2.29 ± 0.5 0.55 1.2

Hitachi Code TO-126 Mod


JEDEC —
EIAJ —
Weight (reference value) 0.67 g
Cautions

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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
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4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
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