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2SD468
Silicon NPN Epitaxial

Application

• Low frequency power amplifier

• Complementary pair with 2SB562

Outline

TO-92MOD

1. Emitter
2. Collector
3. Base

3
2
1
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Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Collector to base voltage VCBO 25 V
Collector to emitter voltage VCEO 20 V
Emitter to base voltage VEBO 5 V
Collector current IC 1.0 A
Collector peak current iC(peak) 1.5 A
Collector power dissipation PC 0.9 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown V(BR)CBO 25 — — V I C = 10 µA, IE = 0
voltage
Collector to emitter breakdown V(BR)CEO 20 — — V I C = 1 mA, RBE = ∞
voltage
Emitter to base breakdown V(BR)EBO 5 — — V I E = 10 µA, IC = 0
voltage
Collector cutoff current I CBO — — 1.0 µA VCB = 20 V, IE = 0
1
DC current transfer ratio hFE* 85 — 240 VCE = 2 V, IC = 0.5 A*2
Collector to emitter saturation VCE(sat) — 0.2 0.5 V I C = 0.8 A, IB = 0.08 A*2
voltage
Base to emitter voltage VBE — 0.79 1.0 V VCE = 2 V, IC = 0.5 A*2
Gain bandwidth product fT — 190 — MHz VCE = 2 V, IC = 0.5 A*2
Collector output capacitance Cob — 22 — pF VCB = 10 V, IE = 0, f = 1 MHz
Notes: 1. The 2SD468 is grouped by h FE as follows.
2. Pulse test
B C
85 to170 120 to 240

2
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Maximum Collector Dissipation Curve Typical Output Characteristics

1.2 1,000
Collector Power Dissipation PC (W)

Collector Current IC (mA)

800 P
6 C =
0.
0.8 5 9
W
600
4
3
400
0.4 2
200 1mA

IB = 0
0 50 100 150 0 0.4 0.8 1.2 1.4 1.6
Ambient Temperature Ta (°C) Collector to Emitter Voltage VCE (V)

DC Current Transfer Ratio vs.

Typical Transfer Characteristics Collector Current
1,000 5,000
VCE = 2 V VCE = 2 V
2,000
DC Current Transfer Ratio hFE

300
Collector Current IC (mA)

1,000
Ta = 75°C 25°C
100 500

200 Ta = 75°C
30
100 25°C
10 50

20
3
10
1 5
0 0.2 0.4 0.6 0.8 1.0 1 3 10 30 100 300 1,000
Base to Emitter Voltage VBE (V) Collector Current IC (mA)

3
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Collector to Emitter Saturation Gain Bandwidth Product vs.

Voltage vs. Collector Current Collector Current
0.25 300
Collector to Emitter Saturation Voltage

VCE = 2 V

Gain Bandwidth Product fT (MHz)

IC = 10 IB
0.20

200
VCE(sat) (V)

0.15

0.10
100

0.05 Ta = 75°C 25°C

0 0
1 3 10 30 100 300 1,000 10 30 100 300 1,000
Collector Current IC (mA) Collector Current IC (mA)

Collector Output Capacitance vs.

Collector to Base Voltage
200
Collector Output Capacitance Cob (pF)

f = 1 MHz
IE = 0
100

50

20

10

5
1 2 5 10 20 50
Collector to Base Voltage VCB (V)

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4.8 ± 0.3 3.8 ± 0.3

8.0 ± 0.5
2.3 Max
0.65 ± 0.1
0.75 Max
10.1 Min
0.60 Max
0.7

0.5 ± 0.1 0.5

1.27
2.54

Hitachi Code TO-92 Mod

JEDEC —
EIAJ Conforms
Weight (reference value) 0.35 g
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Cautions

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intellectual property rights, in connection with use of the information contained in this document.
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received the latest product standards or specifications before final design, purchase or use.
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contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
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for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
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